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    • 8. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20120025296A1
    • 2012-02-02
    • US12969537
    • 2010-12-15
    • Seung Hwan KIM
    • Seung Hwan KIM
    • H01L27/108H01L21/28
    • H01L27/10826H01L27/10885
    • A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing the semiconductor device comprises: forming a plurality of first pillar patterns each of which includes a sidewall contact by selectively etching a semiconductor substrate; forming a buried bit line at a lower portion of a region between two neighboring first pillar patterns; forming a plurality of second pillar patterns by selectively etching upper portions of the first pillar patterns; and forming a gate coupling second pillar patterns arranged in a direction crossing the bit line, the gate enclosing the second pillar patterns.
    • 公开了一种半导体器件及其制造方法。 制造半导体器件的方法包括:通过选择性蚀刻半导体衬底,形成多个第一柱状图案,每个第一柱状图案包括侧壁接触; 在两个相邻的第一柱状图案之间的区域的下部形成掩埋位线; 通过选择性地蚀刻第一柱图案的上部来形成多个第二柱图案; 以及形成沿与所述位线交叉的方向布置的栅极耦合第二柱状图案,所述栅极包围所述第二柱状图案。