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1. 发明授权

US5359213A Charge transfer device and solid state image sensor using the same 失效
标题翻译：电荷转移装置和使用其的固态图像传感器
公开(公告)号：US5359213A
公开(公告)日：1994-10-25
申请号：US40072
申请日：1993-03-30
申请人： Seo K. Lee , Uya Shinji
发明人： Seo K. Lee , Uya Shinji
IPC分类号： H01L21/339 , H01L27/148 , H01L29/10 , H01L29/762 , H01L29/796 , H01L27/14 , H01L31/00
CPC分类号： H01L29/1062 , H01L27/14831
摘要： A charge transfer device and a solid state image sensor using the same, capable of transferring signal charge at a high signal to noise ratio (S/N ratio) and preventing an occurrence of dark current. They include a double-layered charge transfer path structure provided by forming a surface channel region on a buried channel region formed in a semiconductor substrate, the surface channel region having a conductivity opposite to that of the buried channel region. The surface channel region of the doubled-layered structure is used for accumulating dark current generated from boundary surfaces between the substrate and a gate insulating film, whereas the buried channel region is used for transferring optical signal charge. Where minus and/or plus drive voltages are applied to the transfer electrodes, there is no increase in dark current, in accordance with the present invention. The quantity of transferred signal charge can be greatly increased.
摘要翻译：一种电荷转移装置和使用该电荷转移装置的固态图像传感器，能够以高的信噪比（S / N比）传送信号电荷并防止暗电流的发生。它们包括通过在形成在半导体衬底中的掩埋沟道区上形成表面沟道区而提供的双层电荷转移路径结构，该表面沟道区具有与掩埋沟道区相反的导电性。双层结构的表面沟道区域用于积聚从衬底和栅极绝缘膜之间的边界面产生的暗电流，而掩埋沟道区用于传送光信号电荷。在根据本发明的情况下，对传输电极施加负驱动电压和/或加驱动电压，暗电流不增加。传输信号电荷的量可以大大增加。

2. 发明授权

US5519749A Horizontal charge coupled device having a multiple reset gate 失效
公开(公告)号：US5519749A
公开(公告)日：1996-05-21
申请号：US376513
申请日：1995-01-23
申请人： Seo K. Lee
发明人： Seo K. Lee
IPC分类号： H01L27/148 , H01L21/339 , H01L29/423 , H01L29/762 , H01L29/768 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372 , G11C27/04
CPC分类号： H01L29/42396 , H01L29/76816
摘要： A horizontal charge coupled device (HCCD) is provided with a multiple reset gate in order to establish a more stable, less noisy voltage in an output node floating diffusion. Charges are transferred from an input of the HCCD to the floating diffusion by multiple, overlapping gate structures. Signal charges are detected or read out from the floating diffusion through an amplifier/inverter circuit. Periodically, the voltage of the floating diffusion is established to a reference level by application of a reset signal to a multiple reset gate structure, which results in charges in the floating diffusion being transferred to a reset drain. Noise induced by the reset operation is lessened on average due to the multiple reset gate structure.

3. 发明授权

US5298777A CCD image sensor of interlaced scanning type 失效
标题翻译：隔行扫描型CCD图像传感器
公开(公告)号：US5298777A
公开(公告)日：1994-03-29
申请号：US97539
申请日：1993-07-27
申请人： Seo K. Lee
发明人： Seo K. Lee
IPC分类号： H01L27/148 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14831
摘要： A CCD image sensor of an interlaced scanning type comprising a plurality of uniformly spaced photodetectors arranged in series in vertical and horizontal directions, a plurality of VCCD regions arranged between sets of said photodetectors arranged in the vertical directions, a plurality of channel stop regions for electrically isolating said plurality of photodetectors from one another, a plurality of gate electrodes formed on said VCCD regions, each of said plurality of gate electrodes being connected simultaneously to transfer gate electrodes of adjacent ones of said plurality of photodetectors on odd and even horizontal lines, a plurality of barrier layers, each formed at a portion of each of said VCCD regions corresponding to a boundary with each of said gate electrodes on said VCCD regions, for forming a desired potential barrier, and a HCCD region formed under said plurality of VCCD regions, for transferring signal charges from said VCCD regions to an output stage. Therefore, in accordance with the present invention, the gate electrodes can be reduced from four of the prior art to two in number, resulting in simplification in construction and manufacturing process thereof. Also, the reduction in number of the gate electrodes to two allows the driving system to be simple.
摘要翻译：一种隔行扫描型的CCD图像传感器，包括在垂直和水平方向上串联布置的多个均匀间隔的光电检测器，布置在垂直方向上布置的所述光电检测器的组之间的多个VCCD区域，多个用于电将所述多个光电检测器彼此隔离，形成在所述VCCD区上的多个栅极电极，所述多个栅电极中的每一个同时连接以传输奇数和偶数水平线上的所述多个光电检测器中的相邻光电探测器的栅电极，多个势垒层，每个形成在每个所述VCCD区域的对应于所述VCCD区域上的每个所述栅电极的边界的部分中，用于形成期望的势垒;以及形成在所述多个VCCD区下的HCCD区，用于将信号电荷从所述VCCD区传送到输出级。因此，根据本发明，可以将栅电极从现有技术的四个减少到两个，导致其结构和制造过程的简化。此外，将栅电极数量减少到两个允许驱动系统简单。

4. 发明授权

US5426318A Horizontal charge coupled device having a multiple reset gate 失效
标题翻译：具有复位门的水平电荷耦合器件
公开(公告)号：US5426318A
公开(公告)日：1995-06-20
申请号：US867243
申请日：1992-04-10
申请人： Seo K. Lee
发明人： Seo K. Lee
IPC分类号： H01L27/148 , H01L21/339 , H01L29/423 , H01L29/762 , H01L29/768 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372 , H01L29/78
CPC分类号： H01L29/42396 , H01L29/76816
摘要： A horizontal charge coupled device (HCCD) is provided with a multiple reset gate in order to establish a more stable, less noisy voltage in an output node floating diffusion. Charges are transferred from an input of the HCCD to the floating diffusion by multiple, overlapping gate structures. Signal charges are detected or read out from the floating diffusion through an amplifier/inverter circuit. Periodically, the voltage of the floating diffusion is established to a reference level by application of a reset signal to a multiple reset gate structure, which results in charges in the floating diffusion being transferred to a reset drain. Noise induced by the reset operation is lessened on average due to the multiple reset gate structure.
摘要翻译：水平电荷耦合器件（HCCD）具有多个复位栅极，以便在输出节点浮动扩散中建立更稳定，更低噪声的电压。充电通过多个重叠的栅极结构从HCCD的输入传输到浮动扩散。通过放大器/逆变器电路从浮动扩散中检测或读出信号电荷。周期性地，浮置扩散的电压通过将复位信号施加到多重复位栅极结构而建立到参考电平，这导致浮动扩散中的电荷被传送到复位漏极。由于多重复位门结构，复位操作引起的噪声平均减小。

5. 发明授权

US5371033A Method of making charge coupled device image sensor 失效
标题翻译：制造电荷耦合器件图像传感器的方法
公开(公告)号：US5371033A
公开(公告)日：1994-12-06
申请号：US194498
申请日：1994-02-10
申请人： Seo K. Lee , Uja Shinji
发明人： Seo K. Lee , Uja Shinji
IPC分类号： H01L27/148 , H01L21/72 , H01L21/339
CPC分类号： H01L27/14887
摘要： A CCD image sensor comprising: a semiconductor substrate of a first conductivity type connected to a ground; an impurity region of a second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, to serve as a blooming prevention layer; an impurity region of the first conductivity type formed in the surface of the semiconductor substrate, so that it encloses the impurity region of the second conductivity type serving as a blooming prevention layer, to serve as a potential barrier layer; an impurity region of the second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type so that it encloses the impurity region of the first conductivity type serving as a potential barrier layer, to serve as a light receiving region; an insulation film which is formed on the surface of the semiconductor substrate of the first conductivity type and has contact holes at both edges of the impurity region of the second conductivity type, serving as a blooming prevention layer; silicide films filled in the contact holes; and a light shield conductor film which is formed on the surface of the remaining insulation film, except for a portion between the silicide films and the surfaces of the silicide films, and is connected to a voltage source.
摘要翻译：一种CCD图像传感器，包括：连接到地面的第一导电类型的半导体衬底; 形成在第一导电类型的半导体衬底的表面中的第二导电类型的杂质区域用作防起霜层; 形成在半导体衬底的表面中的第一导电类型的杂质区，使得其包围用作防止遮光层的第二导电类型的杂质区，用作势垒层; 形成在第一导电类型的半导体衬底的表面中的第二导电类型的杂质区域，使得其包围用作势垒层的第一导电类型的杂质区域用作光接收区域; 绝缘膜，其形成在第一导电类型的半导体衬底的表面上，并且在第二导电类型的杂质区的两个边缘处具有接触孔，用作防起霜层; 填充在接触孔中的硅化物膜; 以及形成在剩余绝缘膜的表面上的除了硅化物膜与硅化物膜的表面之间的部分之外的光屏蔽导体膜，并且连接到电压源。

6. 发明授权

US5446297A CCD type solid-state image sensor 失效
标题翻译： CCD型固态图像传感器
公开(公告)号：US5446297A
公开(公告)日：1995-08-29
申请号：US193294
申请日：1994-02-08
申请人： Seo K. Lee
发明人： Seo K. Lee
IPC分类号： H01L27/148 , H01L29/796 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14887
摘要： A CCD type solid-state image sensor a n type silicon substrate, a first p type well formed over the substrate, photodiode regions deeply and widely formed in the first well, second p type wells formed in the first well, each of the second well being overlapped with each corresponding photodiode region and each photodiode region preceding to the corresponding photodiode region, n type VCCD channel regions respectively formed in the second wells, p type transfer gate channel regions each formed in each one of the second p type wells between each photodiode region and each corresponding VCCD channel region, p type channel stop regions respectively formed in the second wells, each of the channel stop regions being adapted to isolate each corresponding VCCD channel region from each corresponding preceding photodiode region, p type impurity regions respectively formed beneath surfaces of the photodiode regions, a thin insulating film formed over the entire exposed surface of the resulting structure, transfer gates formed on the thin insulating film to be respectively disposed over the second wells, an interlayer insulating film formed on the thin insulating film to cover the transfer gate electrodes, and a photoshield film formed over the entire exposed surface of the resulting structure except for portions respectively disposed over the photodiode regions.
摘要翻译：一种CCD型固态图像传感器，一种类型的硅衬底，在该衬底上形成的第一p型阱，在第一阱中深入并广泛形成的光电二极管区域，形成在第一阱中的第二p型阱，第二阱中的每一个均为与对应的光电二极管区域之前的每个对应的光电二极管区域和每个光电二极管区域重叠，分别形成在第二阱中的n型VCCD沟道区域，每个形成在每个光电二极管区域的每个第二p型阱中的p型传输栅极沟道区域以及分别形成在第二阱中的每个对应的VCCD沟道区，p型沟道截止区，每个沟道截止区适于将每个相应的VCCD沟道区与每个对应的先前的光电二极管区隔开，p型杂质区分别形成在光电二极管区域，形成在所得到的st的整个暴露表面上的薄绝缘膜形成在薄绝缘膜上的转移门分别设置在第二阱上，形成在薄绝缘膜上以覆盖传输栅电极的层间绝缘膜，以及形成在所得结构的整个暴露表面上的光罩膜除了分别设置在光电二极管区域上的部分。

7. 发明授权

US5349216A Charge coupled device image sensor 失效
标题翻译：电荷耦合器件图像传感器
公开(公告)号：US5349216A
公开(公告)日：1994-09-20
申请号：US76336
申请日：1993-06-11
申请人： Seo K. Lee , Uja Shinji
发明人： Seo K. Lee , Uja Shinji
IPC分类号： H01L27/148 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14887
摘要： A CCD image sensor comprising: a semiconductor substrate of a first conductivity type connected to a ground; an impurity region of a second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, to serve as a blooming prevention layer; an impurity region of the first conductivity type formed in the surface of the semiconductor substrate, so that it encloses the impurity region of the second conductivity type serving as a blooming prevention layer, to serve as a potential barrier layer; an impurity region of the second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type so that it encloses the impurity region of the first conductivity type serving as a potential barrier layer, to serve as a light receiving region; an insulation film which is formed on the surface of the semiconductor substrate of the first conductivity type and has contact holes at both edges of the impurity region of the second conductivity type, serving as a blooming prevention layer; silicide films filled in the contact holes; and a light shield conductor film which is formed on the surface of the remaining insulation film, except for a portion between the silicide films and the surfaces of the silicide films, and is connected to a voltage source.
摘要翻译：一种CCD图像传感器，包括：连接到地面的第一导电类型的半导体衬底; 形成在第一导电类型的半导体衬底的表面中的第二导电类型的杂质区域用作防起霜层; 形成在半导体衬底的表面中的第一导电类型的杂质区，使得其包围用作防止遮光层的第二导电类型的杂质区，用作势垒层; 形成在第一导电类型的半导体衬底的表面中的第二导电类型的杂质区域，使得其包围用作势垒层的第一导电类型的杂质区域用作光接收区域; 绝缘膜，其形成在第一导电类型的半导体衬底的表面上，并且在第二导电类型的杂质区的两个边缘处具有接触孔，用作防起霜层; 填充在接触孔中的硅化物膜; 以及形成在剩余绝缘膜的表面上的除了硅化物膜与硅化物膜的表面之间的部分之外的光屏蔽导体膜，并且连接到电压源。

8. 发明授权

US5024963A Method of fabricating a BCCD channel with stair-case doping by self-alignment 失效
标题翻译：通过自对准制造具有阶梯式掺杂的BCCD通道的方法
公开(公告)号：US5024963A
公开(公告)日：1991-06-18
申请号：US553170
申请日：1990-07-16
申请人： Yong Park , Seo K. Lee
发明人： Yong Park , Seo K. Lee
IPC分类号： H01L21/266 , H01L21/339 , H01L27/148 , H01L29/10 , H01L29/762 , H01L29/768
CPC分类号： H01L29/66954 , H01L29/1062 , H01L29/76833 , H01L29/76841
摘要： This invention relates to a method of forming a charge coupled device (CCD) channel which has a trench-type multi-potential profile. To form the multi-potential profile, ion implantation is performed several times with a self-alignment mask using a polysilicon layer. This method simplifies the fabrication process and prevents charges from diffusing over the entire CCD channel laterally when the amount of charge is small. This results in charge confinement in a trench in the middle of the channel, enhancing self-induced field and fringing field. Consequently, charge transfer efficiency is improved for small amount of charge.
摘要翻译：本发明涉及形成具有沟槽型多电位分布的电荷耦合器件（CCD）沟道的方法。为了形成多电位分布，使用多晶硅层，使用自对准掩模进行多次离子注入。该方法简化了制造工艺，并且当电荷量小时，横向地防止电荷在整个CCD通道上扩散。这导致在通道中间的沟槽中的电荷限制，增强自感场和边缘场。因此，对于少量电荷，电荷转移效率得到改善。

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