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    • 4. 发明申请
    • DISPLAY DEVICE
    • 显示设备
    • US20140264329A1
    • 2014-09-18
    • US14290216
    • 2014-05-29
    • Semiconductor Energy Laboratory Co., Ltd.
    • Shunpei YAMAZAKIKengo AKIMOTOShigeki KOMORIHideki UOCHITomoya FUTAMURATakahiro KASAHARA
    • H01L29/786H01L29/66
    • H01L27/1214G02F1/13624G02F1/1368H01L27/1225H01L27/124H01L29/66742H01L29/7869H01L29/78693
    • A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
    • 保护电路包括非线性元件,其包括栅电极,覆盖栅电极的栅极绝缘层,一对第一和第二布线层,其端部与栅极绝缘层上的栅电极重叠,并且其中 层叠第二氧化物半导体层和导电层,以及与至少栅电极重叠并与栅极绝缘层接触的第一氧化物半导体层,导电层的侧面部和顶面部的一部分,以及 在第一布线层和第二布线层中的第二氧化物半导体层的侧面部分。 在栅极绝缘层上,具有不同性质的氧化物半导体层彼此结合,由此可以进行与肖特基结的稳定操作。 因此,可以降低结漏电,提高非线性元件的特性。