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1. 发明申请

US20170317112A1 ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20170317112A1
公开(公告)日：2017-11-02
申请号：US15652312
申请日：2017-07-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
IPC分类号： H01L27/12 , H04M1/02 , H01L29/786 , H01L29/36 , H01L29/24 , H01L27/32 , H01L27/15 , H04R1/02 , H01L33/02 , H01L21/8234
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

2. 发明申请

US20170033111A1 Semiconductor Device, Circuit Board, and Electronic Device 有权
标题翻译：半导体器件，电路板和电子器件
公开(公告)号：US20170033111A1
公开(公告)日：2017-02-02
申请号：US15220706
申请日：2016-07-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Kiyoshi KATO , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Atsushi HIROSE
IPC分类号： H01L27/108 , H01L29/786 , H01L23/528
摘要： A novel semiconductor device or memory device is provided. Alternatively, a semiconductor device or memory device in which storage capacity per unit area is large is provided. The semiconductor device includes a sense amplifier provided to a semiconductor substrate and a memory cell provided over the sense amplifier. The sense amplifier includes a first transistor. The memory cell includes a capacitor over the semiconductor substrate, a second transistor provided over the capacitor, a conductor, and a groove portion. The capacitor includes a first electrode and a second electrode. The first electrode is formed along the groove portion. The second electrode has a region facing the first electrode in the groove portion. The second transistor includes an oxide semiconductor. One of a source and a drain of the second transistor is electrically connected to the second electrode through the conductor.
摘要翻译：提供了一种新颖的半导体器件或存储器件。或者，提供了其中每单位面积的存储容量大的半导体器件或存储器件。半导体器件包括提供给半导体衬底的读出放大器和设置在读出放大器上的存储单元。读出放大器包括第一晶体管。存储单元包括半导体衬底上的电容器，设置在电容器上的第二晶体管，导体和沟槽部分。电容器包括第一电极和第二电极。第一电极沿槽部形成。第二电极具有在槽部中面向第一电极的区域。第二晶体管包括氧化物半导体。第二晶体管的源极和漏极之一通过导体与第二电极电连接。

3. 发明申请

US20160190176A1 ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US20160190176A1
公开(公告)日：2016-06-30
申请号：US15063706
申请日：2016-03-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
IPC分类号： H01L27/12 , H04M1/02 , H01L27/15 , H01L27/32 , H01L29/24 , H01L29/786
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

4. 发明申请

US20190035819A1 ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190035819A1
公开(公告)日：2019-01-31
申请号：US16133823
申请日：2018-09-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
IPC分类号： H01L27/12 , H04R1/02 , H04M1/02 , H01L29/36 , H01L33/02 , H01L29/786 , H01L29/24 , H01L27/32 , H01L27/15 , H01L21/8234
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

5. 发明申请

US20160104734A1 IMAGING DEVICE 审中-公开
标题翻译：成像装置
公开(公告)号：US20160104734A1
公开(公告)日：2016-04-14
申请号：US14874664
申请日：2015-10-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsushi HIROSE , Yoshiyuki KUROKAWA , Takayuki IKEDA
IPC分类号： H01L27/146 , H01L27/12
CPC分类号： H01L27/14616 , H01L27/1225 , H01L27/14641 , H01L27/14643 , H01L27/14665 , H01L27/14692 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： To provide an imaging device in which incident light can be converted into an appropriate electric signal. The imaging device includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, and a fourth transistor. One of a source electrode and a drain electrode of the first transistor and one electrode of the photoelectric conversion element have an electrical connection portion in a first opening provided in an insulating layer positioned between the one of the source electrode and the drain electrode of the first transistor and the one electrode of the photoelectric conversion element. The number of the first opening is one in a region where the one of the source electrode and the drain electrode of the first transistor overlaps with the one electrode of the photoelectric conversion element.
摘要翻译：提供一种成像装置，其中可以将入射光转换成适当的电信号。成像装置包括光电转换元件，第一晶体管，第二晶体管，第三晶体管和第四晶体管。第一晶体管的源电极和漏电极之一和光电转换元件的一个电极之间的第一开口中的第一开口中的电连接部分设置在位于第一晶体管的源电极和漏电极之间的绝缘层中的第一开口晶体管和光电转换元件的一个电极。第一开口的数量是在第一晶体管的源电极和漏电极中的一个与光电转换元件的一个电极重叠的区域中的一个。

6. 发明申请

US20220075235A1 DISPLAY DEVICE 有权
公开(公告)号：US20220075235A1
公开(公告)日：2022-03-10
申请号：US17530899
申请日：2021-11-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Atsushi HIROSE
IPC分类号： G02F1/1362 , G02F1/1368 , H01L27/12 , G02F1/1343 , G09G3/36
摘要： To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.

7. 发明申请

US20150241510A1 CURRENT MEASUREMENT METHOD 有权
标题翻译：电流测量方法
公开(公告)号：US20150241510A1
公开(公告)日：2015-08-27
申请号：US14625984
申请日：2015-02-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masashi TSUBUKU , Kazuma FURUTANI , Atsushi HIROSE , Toshihiko TAKEUCHI
IPC分类号： G01R31/26 , G01R31/12
CPC分类号： G01R19/0092
摘要： A minute current measurement method is provided. In the current measurement method, a first potential is applied to a first terminal of a transistor under test, a second potential is applied to a first terminal of a first transistor, the first transistor is turned on to accumulate a predetermined charge in a node electrically connecting a second terminal of the transistor under test with a second terminal of the first transistor, a third potential of an output terminal of a read circuit electrically connected to the node is measured, the first transistor is turned off, a fourth potential of the output terminal of the read circuit electrically connected to the node is measured, the amount of the charge held by the node is estimated from the amount of change in the potential of the output terminal of the read circuit (e.g., a difference between the third potential and the fourth potential), and a value of current flowing between the first terminal of the transistor under test and the second terminal of the first transistor is calculated from the amount of the charge held by the node.
摘要翻译：提供了一个微小的电流测量方法。在当前的测量方法中，将第一电位施加到被测晶体管的第一端，将第二电位施加到第一晶体管的第一端，第一晶体管导通以在节点中积累预定电荷将被测晶体管的第二端与第一晶体管的第二端连接，测量与节点电连接的读取电路的输出端的第三电位，第一晶体管截止，输出的第四电位测量与节点电连接的读取电路的端子，根据读取电路的输出端子的电位变化量来估计由节点保持的电荷量（例如，第三电位与第四电位），并且计算在被测晶体管的第一端子与第一晶体管的第二端子之间流动的电流值 d由节点持有的费用量。

8. 发明申请

US20130313670A1 COLOR SENSOR AND ELECTRONIC DEVICE HAVING THE SAME 审中-公开
标题翻译：彩色传感器和具有该色彩传感器的电子设备
公开(公告)号：US20130313670A1
公开(公告)日：2013-11-28
申请号：US13959044
申请日：2013-08-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsushi HIROSE
IPC分类号： G01N21/25 , H01L27/144
CPC分类号： G01N21/255 , G09G3/3406 , G09G3/3413 , G09G2320/0626 , G09G2320/0666 , G09G2360/144 , G09G2360/145 , H01L27/144 , H01L27/14621 , H01L27/14623 , H01L27/14685
摘要： A color sensor with a plurality of optical sensors in which the number of terminals for connection with the outside can be reduced. The color sensor includes a plurality of optical sensors each provided with a photoelectric conversion element and an optical filter over a light-transmitting substrate. The optical filters in the plurality of optical sensors have light-transmitting characteristics different from each other. The plurality of optical sensors is mounted over an interposer including a plurality of terminal electrodes for electrical connection with an external device. The interposer includes a wiring having a plurality of branches for electrical connection between the terminal electrode for inputting a high power supply potential to the plurality of optical sensors and a wiring having a plurality of branches for electrical connection between the terminal electrode for inputting a low power supply potential to the plurality of optical sensors.
摘要翻译：具有多个光学传感器的颜色传感器，其中可以减少与外部连接的端子的数量。颜色传感器包括多个光学传感器，每个光传感器在光透射基板上设置有光电转换元件和滤光器。多个光学传感器中的滤光器具有彼此不同的透光特性。多个光学传感器安装在包括用于与外部设备电连接的多个端子电极的插入器上。插入器包括具有多个分支的布线，用于在用于向多个光学传感器输入高电源电位的端子电极之间进行电连接;以及布线，具有用于在用于输入低功率的端子电极之间进行电连接的多个分支向多个光学传感器供应电位。

9. 发明申请

US20210210519A1 ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210210519A1
公开(公告)日：2021-07-08
申请号：US17206906
申请日：2021-03-19
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
IPC分类号： H01L27/12 , H01L29/786 , H01L33/02 , H04R1/02 , H01L29/36 , H01L27/15 , H01L27/32 , H01L29/24 , H04M1/02
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

10. 发明申请

US20200183241A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20200183241A1
公开(公告)日：2020-06-11
申请号：US16790351
申请日：2020-02-13
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Atsushi HIROSE
IPC分类号： G02F1/1362 , G09G3/36 , G02F1/1343 , H01L27/12 , G02F1/1368
摘要： To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.

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