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1. 发明授权

US11114402B2 Semiconductor device with backmetal and related methods 有权
公开(公告)号：US11114402B2
公开(公告)日：2021-09-07
申请号：US15903677
申请日：2018-02-23
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Michael J. Seddon , Takashi Noma , Kazuo Okada , Hideaki Yoshimi , Naoyuki Yomoda , Yusheng Lin
IPC分类号： H01L23/00 , H01L21/78 , H01L23/498
摘要： Implementations of semiconductor devices may include a die having a first side and a second side, a contact pad coupled to the first side of the die, and a metal layer coupled to the second side of the die. A thickness of the die may be no more than four times a thickness of the metal layer.

2. 发明授权

US12040295B2 Semiconductor device with backmetal and related methods 有权
公开(公告)号：US12040295B2
公开(公告)日：2024-07-16
申请号：US17320495
申请日：2021-05-14
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Michael J. Seddon , Takashi Noma , Kazuo Okada , Hideaki Yoshimi , Naoyuki Yomoda , Yusheng Lin
IPC分类号： H01L23/00 , H01L21/78 , H01L23/498
CPC分类号： H01L24/10 , H01L21/78 , H01L23/49811 , H01L24/95
摘要： Implementations of semiconductor devices may include a die having a first side and a second side, a contact pad coupled to the first side of the die, and a metal layer coupled to the second side of the die. A thickness of the die may be no more than four times a thickness of the metal layer.

3. 发明授权

US11728424B2 Isolation in a semiconductor device 有权
公开(公告)号：US11728424B2
公开(公告)日：2023-08-15
申请号：US16949321
申请日：2020-10-26
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Takashi Noma , Yusheng Lin , Kazuo Okada , Hideaki Yoshimi , Shunsuke Yasuda
IPC分类号： H01L29/78 , H01L29/66 , H01L29/739
CPC分类号： H01L29/7816 , H01L29/66295 , H01L29/7395
摘要： According to an aspect, a semiconductor device for integrating multiple transistors includes a wafer substrate including a first region and a second region. The first region defines at least a portion of at least one first transistor. The second region defines at least a portion of at least one second transistor. The semiconductor device includes an isolation area located between the first region and the second region, at least one terminal of the at least one first transistor contacting the first region of the wafer substrate, at least one terminal of the at least one second transistor contacting the second region of the wafer substrate, and an encapsulation material, where the encapsulation material includes a portion located within the isolation area.

4. 发明授权

US09917010B2 Semiconductor device manufacturing method 有权
公开(公告)号：US09917010B2
公开(公告)日：2018-03-13
申请号：US14248020
申请日：2014-04-08
申请人： Semiconductor Components Industries, LLC
发明人： Hideaki Yoshimi , Mitsuo Umemoto , Kazumi Onda , Kazumi Horinaka
IPC分类号： H01L21/78 , H01L23/367
CPC分类号： H01L21/78 , H01L23/367 , H01L2224/16 , H01L2224/73253 , H01L2924/01019 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor substrate; a heat sink mounted on an upper surface of the semiconductor substrate; wirings formed on a lower surface of the semiconductor substrate; and the like. The heat sink is mounted on the upper surface of the semiconductor substrate, and a planar size thereof is approximately the same as that of the semiconductor substrate. Moreover, the heat sink has a thickness of 500 μm to 2 mm, and may be formed to be thicker than the semiconductor substrate. By using the heat sink to reinforce the substrate, a thickness of the semiconductor substrate can be reduced to, for example, about 50 μm. As a result, a thickness of the entire semiconductor device can be reduced.

5. 发明授权

US08809076B2 Semiconductor device and method of automatically inspecting an appearance of the same 有权
标题翻译：半导体装置及其外观自动检测方法
公开(公告)号：US08809076B2
公开(公告)日：2014-08-19
申请号：US13750708
申请日：2013-01-25
申请人： Semiconductor Components Industries, LLC
发明人： Hideaki Yoshimi , Shinzo Ishibe , Eiji Kurose
IPC分类号： G01B21/02 , H01L21/66 , H01L21/02 , H01L21/78
CPC分类号： G01B21/02 , H01L22/12 , H01L23/544 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a semiconductor device and a method of automatically inspecting the appearance, which achieves proper recognition of the size of a chipping occurring from an end portion of the semiconductor device toward the element forming region by an automatic appearance inspection machine, and prevents a problem of judging an appearance non-defective product as an appearance defective product. A semiconductor device includes a resin layer extending from an element forming region over a guard ring surrounding the element forming region so as to cover these except a plurality of portions of the guard ring, and a chipping extending from a chip end portion of a semiconductor device toward the end portion of the resin layer. An end portion of the guard ring partially exposed from the resin layer is used as a reference to measure a distance y from the end portion of the guard ring to the end portion of the chipping and a distance x from the end portion of the guard ring to the end portion of the resin layer. The device is judged as an appearance non-defective product when y is larger than x or is judged as an appearance defective product when y is equal to x or y is smaller than x.
摘要翻译：本发明提供了一种自动检查外观的半导体器件和方法，其通过自动外观检查机实现了从半导体器件的端部朝向元件形成区域发生的切屑的尺寸的正确识别，并且防止了问题将外观无缺陷产品判定为外观不良品。半导体器件包括树脂层，该树脂层从围绕元件形成区域的保护环上的元件形成区域延伸，以覆盖除保护环的多个部分之外的元件，以及从半导体器件的芯片端部延伸的切屑朝向树脂层的端部。使用从树脂层部分露出的保护环的端部作为基准来测量从保护环的端部到切屑的端部的距离y和距保护环的端部的距离x 到树脂层的端部。当y大于x时，该装置被判断为外观无缺陷产品，或者当y等于x或y小于x时将其判定为外观缺陷产品。

6. 发明申请

US20140220739A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20140220739A1
公开(公告)日：2014-08-07
申请号：US14248020
申请日：2014-04-08
申请人： Semiconductor Components Industries, LLC.
发明人： Hideaki Yoshimi , Mitsuo Umemoto , Kazumi Onda , Kazumi Horinaka
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L23/367 , H01L2224/16 , H01L2224/73253 , H01L2924/01019 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor substrate; a heat sink mounted on an upper surface of the semiconductor substrate; wirings formed on a lower surface of the semiconductor substrate; and the like. The heat sink is mounted on the upper surface of the semiconductor substrate, and a planar size thereof is approximately the same as that of the semiconductor substrate. Moreover, the heat sink has a thickness of 500 μm to 2 mm, and may be formed to be thicker than the semiconductor substrate. By using the heat sink to reinforce the substrate, a thickness of the semiconductor substrate can be reduced to, for example, about 50 μm. As a result, a thickness of the entire semiconductor device can be reduced.
摘要翻译：半导体器件包括：半导体衬底; 安装在所述半导体衬底的上表面上的散热器; 形成在半导体衬底的下表面上的布线; 等等。散热器安装在半导体衬底的上表面上，其平面尺寸与半导体衬底大致相同。此外，散热器的厚度为500μm〜2mm，可以形成为比半导体基板厚。通过使用散热器来加强基板，可以将半导体基板的厚度减小到例如约50μm。结果，可以减小整个半导体器件的厚度。

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