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1. 发明申请

US20090230393A1 DIODE 有权
标题翻译：二极管
公开(公告)号：US20090230393A1
公开(公告)日：2009-09-17
申请号：US12400404
申请日：2009-03-09
申请人： Seiji MIYOSHI , Tetsuya OKADA
发明人： Seiji MIYOSHI , Tetsuya OKADA
IPC分类号： H01L29/861
CPC分类号： H01L29/861 , H01L29/0619 , H01L29/402 , Y10S438/979
摘要： In a pn junction diode having a conductivity modulating element provided on a first principal surface of a semiconductor substrate, when an impurity concentration of a p type impurity region is lowered to shorten a reverse recovery time, hole injection is suppressed, thereby causing a problem that a forward voltage value is increased at a certain current point. Moreover, introduction of a life time killer to shorten the reverse recovery time leads to a problem of increased leak current. On an n− type semiconductor layer that is a single crystal silicon layer, a p type polycrystalline silicon layer (p type polysilicon layer) is provided. Since the polysilicon layer has more grain boundaries than the single crystal silicon layer, an amount of holes injected into the n− type semiconductor layer from the p type polysilicon layer in forward voltage application can be suppressed. Moreover, a natural oxide film formed between the n− type semiconductor layer and the p type polysilicon layer in formation of the p type polysilicon layer can also reduce the amount of holes injected into the n− type semiconductor layer. Thus, a time to extract the holes in reverse voltage application, that is, a reverse recovery time can be shortened without using a life time killer.
摘要翻译：在具有设置在半导体衬底的第一主表面上的导电性调制元件的pn结二极管中，当降低ap型杂质区域的杂质浓度以缩短反向恢复时间时，空穴注入被抑制，从而导致以下问题：正向电压值在某一当前点增加。此外，引入寿命杀手以缩短反向恢复时间导致泄漏电流增加的问题。在作为单晶硅层的n型半导体层上，设置p型多晶硅层（p型多晶硅层）。由于多晶硅层具有比单晶硅层更多的晶界，因此可以抑制在正向电压施加中从p型多晶硅层注入到n型半导体层中的空穴量。此外，在形成p型多晶硅层时，形成在n型半导体层和p型多晶硅层之间的自然氧化物膜也可以减少注入到n型半导体层中的空穴的量。因此，可以在不使用寿命杀手的情况下缩短在反向电压施加中提取孔的时间，即反向恢复时间。

2. 发明申请

US20080237807A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080237807A1
公开(公告)日：2008-10-02
申请号：US12055498
申请日：2008-03-26
申请人： Seiji MIYOSHI , Tetsuya Okada
发明人： Seiji MIYOSHI , Tetsuya Okada
IPC分类号： H01L29/40
CPC分类号： H01L29/861 , H01L29/0692 , H01L29/417 , H01L29/8611
摘要： A second electrode is selectively brought into contact with a semiconductor substrate. Specifically, an insulating film having opening portions is provided on the second principal surface of the semiconductor substrate, and the second electrode is provided on the insulating film. The second electrode comes into contact with the second principal surface of the semiconductor substrate through the opening portions. The total area of the opening portions is approximately the half of the total area of the second principal surface of the semiconductor substrate. Consequently, minority carriers (holes) are prevented by the insulating film from being drawn out, and thus, the loss of the minority carriers around the second electrode is decreased. Accordingly, the conductivity modulation effect is improved. Therefore, the forward voltage can be decreased even with a structure in which the impurity concentration of a p type impurity region is decreased in order to shorten a reverse recover time.
摘要翻译：选择性地使第二电极与半导体衬底接触。具体地，在半导体衬底的第二主表面上设置具有开口部分的绝缘膜，并且第二电极设置在绝缘膜上。第二电极通过开口部分与半导体衬底的第二主表面接触。开口部分的总面积大约是半导体衬底的第二主表面的总面积的一半。因此，通过绝缘膜被拉出来防止少数载流子（空穴），从而减少了第二电极周围的少数载流子的损失。因此，改善了电导率调制效果。因此，为了缩短反向恢复时间，即使降低p型杂质区域的杂质浓度的结构，也能够降低正向电压。

3. 发明申请

US20100320557A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100320557A1
公开(公告)日：2010-12-23
申请号：US12816499
申请日：2010-06-16
申请人： Seiji MIYOSHI , Testuya Okada , Shiho Arimoto
发明人： Seiji MIYOSHI , Testuya Okada , Shiho Arimoto
IPC分类号： H01L29/872
CPC分类号： H01L27/0814 , H01L29/1608 , H01L29/6606 , H01L29/66143 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does.
摘要翻译：提供了具有串联连接的Si-FRD的阳极和Si-SBD的阴极的半导体器件。 Si-SBD具有可累积电荷量等于或大于Si-FRD反向恢复时发生的电荷量的结电容，并且具有比Si-FRD低的击穿电压。

4. 发明申请

US20090298673A1 EXHAUST GAS PURIFICATION CATALYST 审中-公开
标题翻译：排气净化催化剂
公开(公告)号：US20090298673A1
公开(公告)日：2009-12-03
申请号：US12473918
申请日：2009-05-28
申请人： Masaaki AKAMINE , Masahiko SHIGETSU , Hirosuke SUMIDA , Tatsuto FUKUSHIMA , Seiji MIYOSHI , Hiroshi YAMADA , Hideharu IWAKUNI , Koichiro HARADA
发明人： Masaaki AKAMINE , Masahiko SHIGETSU , Hirosuke SUMIDA , Tatsuto FUKUSHIMA , Seiji MIYOSHI , Hiroshi YAMADA , Hideharu IWAKUNI , Koichiro HARADA
IPC分类号： B01J29/072 , B01J23/10
CPC分类号： B01D53/945 , B01D2251/2062 , B01D2251/2067 , B01D2255/1021 , B01D2255/1025 , B01D2255/206 , B01D2255/20715 , B01D2255/20738 , B01D2255/2092 , B01D2255/407 , B01D2255/50 , B01D2255/908 , B01D2255/91 , B01D2255/9202 , B01D2258/012 , B01D2258/014 , B01J21/066 , B01J23/83 , B01J23/894 , B01J29/06 , B01J29/7007 , B01J37/0215 , Y02T10/22
摘要： An exhaust gas purification catalyst includes a catalyst layer formed on a support. The catalyst layer contains Ce-containing oxide particles having an oxygen storage/release capacity and a catalytic metal. The catalyst layer further contains a large number of iron oxide particles of 300 nm diameter or less that are dispersed therein and are in contact with the Ce-containing oxide particles. When observed by electron microscopy, the proportion of the area of iron oxide particles of 300 nm diameter or less to the total area of all of iron oxide particles in the catalyst layer is 30% or more.
摘要翻译：废气净化催化剂包括形成在载体上的催化剂层。催化剂层含有具有储氧/释放能力的含Ce氧化物颗粒和催化金属。催化剂层还含有分散在其中并与含Ce氧化物颗粒接触的300nm直径或更小的大量氧化铁颗粒。当通过电子显微镜观察时，催化剂层中氧化铁颗粒的总面积与直径在300nm以下的氧化铁颗粒的面积的比例为30％以上。

5. 发明申请

US20100099554A1 EXHAUST GAS PURIFICATION CATALYST 审中-公开
标题翻译：排气净化催化剂
公开(公告)号：US20100099554A1
公开(公告)日：2010-04-22
申请号：US12580206
申请日：2009-10-15
申请人： Kenji SUZUKI , Hiroshi YAMADA , Seiji MIYOSHI , Susumu MINEOI
发明人： Kenji SUZUKI , Hiroshi YAMADA , Seiji MIYOSHI , Susumu MINEOI
IPC分类号： B01J23/10
CPC分类号： F01N3/0807 , B01D53/9422 , B01D53/945 , B01D2255/1021 , B01D2255/1025 , B01D2255/2065 , B01D2255/2066 , B01D2255/40 , B01D2255/91 , B01D2257/404 , B01D2258/012 , B01J23/002 , B01J23/63 , B01J35/0006 , B01J35/006 , B01J35/0073 , B01J35/10 , B01J35/1009 , B01J35/1014 , B01J35/1038 , B01J35/1061 , B01J37/0244 , B01J37/0248 , B01J37/03 , B01J2523/00 , F01N3/0842 , F01N2370/02 , F01N2510/06 , Y02T10/22 , B01J2523/24 , B01J2523/25 , B01J2523/31 , B01J2523/3712 , B01J2523/3718 , B01J2523/822 , B01J2523/828
摘要： An exhaust gas purification catalyst includes a support and a catalytic layer provided on the support. The catalytic layer contains: a NOx storage material which stores NOx in exhaust gas when an air-fuel ratio of the exhaust gas is leaner than a stoichiometric air-fuel ratio, and releases the NOx when the air-fuel ratio is close to the stoichiometric air-fuel ratio or richer than the stoichiometric air-fuel ratio; and CePr-based mixed oxide particles doped with a catalytic metal and formed by complexing at least Ce and Pr. The CePr-based mixed oxide particles contain a Ce oxide and a Pr oxide which are at least partially dissolved in each other. The catalytic metal is dissolved in the oxide particles.
摘要翻译：废气净化催化剂包括载体和设置在载体上的催化层。催化剂层包含：当排气的空燃比比化学计量空燃比更稀的时，将NOx存储在废气中的NOx储存材料，当空燃比接近理论空燃比时，排出NOx 空燃比或比理论空燃比更浓; 和掺杂有催化金属的CePr基混合氧化物颗粒，并通过至少Ce和Pr络合形成。 CePr系混合氧化物粒子含有至少部分地相互溶解的Ce氧化物和Pr氧化物。催化金属溶解在氧化物颗粒中。

6. 发明申请

US20090084092A1 EXHAUST GAS PURIFYING CATALYST SYSTEM 审中-公开
标题翻译：排气净化催化剂体系
公开(公告)号：US20090084092A1
公开(公告)日：2009-04-02
申请号：US12243063
申请日：2008-10-01
申请人： Seiji MIYOSHI , Hideharu IWAKUNI , Koji MINOSHIMA , Akihide TAKAMI , Masahiko SHIGETSU
发明人： Seiji MIYOSHI , Hideharu IWAKUNI , Koji MINOSHIMA , Akihide TAKAMI , Masahiko SHIGETSU
IPC分类号： F01N3/10
CPC分类号： F01N3/10 , F01N13/009 , F01N2510/067 , F01N2570/16
摘要： Disclosed is an exhaust gas purifying catalyst system, which comprises an upstream catalyst disposed in an exhaust gas passage of an engine at a position on an upstream side with respect to a direction of an exhaust gas stream, and a downstream catalyst disposed in the exhaust gas passage at a position on a downstream side with respect to the direction of the exhaust gas stream. In the exhaust gas purifying catalyst system, the downstream catalyst includes a cerium (Ce)-containing rhodium-doped composite oxide and an Ni component, and the upstream catalyst includes a cerium (Ce)-containing composite oxide other than the rhodium-doped composite oxide, and a Ni component. A ratio of Ni to CeO2 in the upstream catalyst is in the range of 15 to 20 mass %, and a ratio of Ni to CeO2 in the downstream catalyst is in the range of 10 to 60 mass %. The exhaust gas purifying catalyst system of the present invention can reduce an amount of H2S emission while achieving high purification performance.
摘要翻译：公开了一种废气净化催化剂体系，其包括在排气流方向的上游侧的位置处配置在发动机的排气通路中的上游催化剂，以及配置在排气中的下游催化剂相对于废气流的方向在下游侧的位置处的通道。在排气净化催化剂体系中，下游催化剂包括含铈（Ce）的铑掺杂复合氧化物和Ni成分，上游催化剂包含除铑掺杂复合氧化物以外的含铈（Ce）氧化物和Ni组分。上游催化剂中的Ni与CeO 2的比例为15〜20质量％，下游催化剂中的Ni与CeO 2的比例为10〜60质量％。本发明的废气净化催化剂体系可以在实现高纯化性能的同时，减少H2S排放量。

7. 发明申请

US20080184048A1 Power supply device and communication apparatus 失效
标题翻译：电源装置及通讯装置
公开(公告)号：US20080184048A1
公开(公告)日：2008-07-31
申请号：US11987578
申请日：2007-11-30
申请人： Yoshito Koyama , Seiji MIYOSHI , Eiji Miyachika
发明人： Yoshito Koyama , Seiji MIYOSHI , Eiji Miyachika
IPC分类号： G06F1/32
CPC分类号： G06F1/3203 , G06F1/3296 , H04B1/00 , Y02D10/172
摘要： A power supply device of the invention includes: a supply section that supplies power to a second processing device which processes data in response to processing execution by a first processing device which processes data; a load detection section that detects a load of processing execution by the first processing device; and a power control section that causes the supply section to increase or decrease power supply according to the magnitude of load detected by the load detection section. The load of processing execution by the first processing device disposed in the upstream side relative to the second processing device is detected, and power supply to the second processing device is increased or decreased according to the detected magnitude of load. Accordingly, even when the amount of processing data sharply increases, sufficient power can be unfailingly supplied to the second processing device.
摘要翻译：本发明的电源装置包括：供应部，其向第二处理装置供电，所述第二处理装置响应处理数据的第一处理装置的处理执行处理数据; 负载检测部，其检测由所述第一处理装置执行的处理的负担; 以及功率控制部，其使供给部根据由负载检测部检测出的负载的大小来增大或减少供电。检测由设置在相对于第二处理装置的上游侧的第一处理装置的处理执行的负担，并且根据检测到的负载量来增加或减少对第二处理装置的供电。因此，即使当处理数据的量急剧增加时，也能够充分地向第二处理装置提供足够的功率。

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