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    • 7. 发明授权
    • Bipolar transistor in bipolar-CMOS technology
    • 双极晶体管在双极CMOS技术
    • US08536002B2
    • 2013-09-17
    • US13567552
    • 2012-08-06
    • Hiroshi YasudaBerthold Staufer
    • Hiroshi YasudaBerthold Staufer
    • H01L21/8238
    • H01L27/0623H01L21/8249H01L29/1004H01L29/66287H01L29/732H01L29/7833
    • A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent field oxide, and concurrently implanting the MOS gate layer and the polycrystalline region of the base layer, so that the base-collector junction extends into the substrate less than one-third of the depth of the field oxide, and vertically cumulative doping density of the polycrystalline region of the base layer is between 80 percent and 125 percent of a vertically cumulative doping density of the MOS gate. An integrated circuit containing a bipolar transistor and an MOS transistor formed by the described process.
    • 通过使用非选择性外延工艺形成双极型晶体管的基极层,使得基极层在集电极有源区域上具有单一结晶区域和多晶硅层,形成包含双极晶体管和MOS晶体管的集成电路的工艺 区域,并且同时注入基极层的MOS栅极层和多晶区域,使得基极 - 集电极结延伸到小于场氧化物深度的三分之一的衬底中,并且垂直累积掺杂 基极层的多晶区域的密度在MOS栅极的垂直累积掺杂密度的80%至125%之间。 包含双极晶体管和通过所描述的工艺形成的MOS晶体管的集成电路。
    • 8. 发明授权
    • Semiconductor device having a first bipolar device and a second bipolar device and method for fabrication
    • 具有第一双极器件和第二双极器件的半导体器件及其制造方法
    • US08450179B2
    • 2013-05-28
    • US11670729
    • 2007-02-02
    • Badih El-KarehHiroshi YasudaScott Balster
    • Badih El-KarehHiroshi YasudaScott Balster
    • H01L21/331
    • H01L29/7378H01L21/8222H01L21/8249H01L27/0825H01L29/66242
    • A method for fabricating a semiconductor device having a first and second bipolar devices of the same dopant type includes: depositing a dielectric layer over a semiconductor layer, depositing a gate conductor layer over the dielectric layer, defining base regions of both bipolar devices, removing the gate conductor layer and dielectric layer in the base regions, depositing a base layer on the gate conductor layer and on the exposed semiconductor layer in the base regions, depositing an insulating layer over the base layer, forming a photoresist layer and defining emitter regions of both bipolar devices, removing the photoresist layer in the emitter regions thereby forming two emitter windows, masking the emitter window of the first bipolar device and exposing the base layer in the base region of the second bipolar device to an additional emitter implant through the associated emitter window.
    • 一种用于制造具有相同掺杂剂类型的第一和第二双极器件的半导体器件的方法包括:在半导体层上沉积介电层,在电介质层上沉积栅极导体层,限定两个双极器件的基极区域, 栅极导体层和电介质层,在栅极导体层和基极区域的暴露的半导体层上沉积基底层,在基底层上沉积绝缘层,形成光致抗蚀剂层并限定两者的发射极区域 去除发射极区域中的光致抗蚀剂层,从而形成两个发射器窗口,掩蔽第一双极器件的发射极窗口,并将第二双极器件的基极区域中的基极层通过相关的发射极窗口暴露于另外的发射体注入 。