专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07615801B2 High voltage silicon carbide devices having bi-directional blocking capabilities 有权
标题翻译：具有双向阻挡能力的高电压碳化硅器件
公开(公告)号：US07615801B2
公开(公告)日：2009-11-10
申请号：US11159972
申请日：2005-06-23
申请人： Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Hudson McDonald Hobgood
发明人： Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Hudson McDonald Hobgood
IPC分类号： H01L29/747
CPC分类号： H01L29/66068 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/747 , H01L29/87 , H01L2924/10156
摘要： High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.
摘要翻译：提供高压碳化硅（SiC）器件，例如晶闸管。具有第一导电类型的第一SiC层设置在具有第二导电类型的压电SiC衬底的第一表面上。 SiC的第一区域设置在第一SiC层上并具有第二导电类型。 SiC的第二区域设置在第一SiC层中，具有第一导电类型并且与SiC的第一区域相邻。具有第一导电类型的第二SiC层设置在压电SiC衬底的第二表面上。 SiC的第三区域设置在第二SiC层上并具有第二导电类型。 SiC的第四区域设置在第二SiC层中，具有第一导电类型并且与SiC的第三区域相邻。第一和第二触点分别设置在SiC的第一和第三区域上。还提供了制造高电压SiC器件的相关方法。

2. 发明授权

US07414268B2 High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities 有权
标题翻译：具有双向阻塞能力的高压碳化硅MOS双极器件
公开(公告)号：US07414268B2
公开(公告)日：2008-08-19
申请号：US11132355
申请日：2005-05-18
申请人： Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Hudson McDonald Hobgood , Anant K. Agarwal , John W. Palmour
发明人： Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Hudson McDonald Hobgood , Anant K. Agarwal , John W. Palmour
IPC分类号： H01L31/0312 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7395 , H01L29/1608 , H01L29/66068 , H01L29/66333
摘要： Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.
摘要翻译：提供了碳化硅高压半导体器件及其制造方法。这些器件包括电压阻挡衬底。提供具有电压阻挡衬底的绝缘栅双极晶体管。可以提供平面和斜边缘终止。

3. 发明授权

US07391057B2 High voltage silicon carbide devices having bi-directional blocking capabilities 有权
标题翻译：具有双向阻挡能力的高电压碳化硅器件
公开(公告)号：US07391057B2
公开(公告)日：2008-06-24
申请号：US11131509
申请日：2005-05-18
申请人： Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Hudson McDonald Hobgood , Anant K. Agarwal , John W. Palmour
发明人： Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Hudson McDonald Hobgood , Anant K. Agarwal , John W. Palmour
IPC分类号： H01L31/0312
CPC分类号： H01L29/74 , H01L29/0661 , H01L29/1608
摘要： High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.
摘要翻译：提供高压碳化硅（SiC）器件，例如晶闸管。具有第一导电类型的第一SiC层设置在具有第二导电类型的压电SiC衬底的第一表面上。 SiC的第一区域设置在第一SiC层上并具有第二导电类型。 SiC的第二区域设置在第一SiC层中。 SiC的第二区域具有第一导电类型并且与SiC的第一区域相邻。具有第一导电类型的第二SiC层设置在压电SiC衬底的与第一表面相对的第二表面上。首先，分别在SiC的第一区域，SiC的第二区域和第二SiC层上设置第二和第三触点。还提供了制造高电压SiC器件的相关方法。

4. 发明授权

US08119539B2 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen 有权
标题翻译：使用原子氧在碳化硅层上制造氧化物层的方法
公开(公告)号：US08119539B2
公开(公告)日：2012-02-21
申请号：US12502582
申请日：2009-07-14
申请人： Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Dave Grider
发明人： Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Dave Grider
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/049 , H01L21/02164 , H01L21/02236 , H01L21/02255 , H01L21/3105 , H01L21/31658 , H01L21/32105 , Y10S438/931
摘要： Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500° C. to about 1300° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen.
摘要翻译：公开了在碳化硅层上形成氧化物层的方法，包括将碳化硅层放置在基本上不含金属杂质的氧化炉管等室中，将室的气氛加热到约500℃的温度。至约1300℃，在室中引入原子氧，并将原子氧流过碳化硅层的表面，从而在碳化硅层上形成氧化物层。在一些实施方案中，引入原子包括在室中提供源氧化物的氧气，并使氮气和氧气的混合物流过源氧化物。源氧化物可以包括氧化铝或另一氧化物如氧化锰。一些方法包括在碳化硅层上形成氧化物层，并在包括原子氧的气氛中退火氧化物层。

5. 发明申请

US20100009545A1 Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utilizing Atomic Oxygen 有权
标题翻译：在使用原子氧的碳化硅层上制备氧化物层的方法
公开(公告)号：US20100009545A1
公开(公告)日：2010-01-14
申请号：US12502582
申请日：2009-07-14
申请人： Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Dave Grider
发明人： Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Dave Grider
IPC分类号： H01L21/31
CPC分类号： H01L21/049 , H01L21/02164 , H01L21/02236 , H01L21/02255 , H01L21/3105 , H01L21/31658 , H01L21/32105 , Y10S438/931
摘要： Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500° C. to about 1300° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen.
摘要翻译：公开了在碳化硅层上形成氧化物层的方法，包括将碳化硅层放置在基本上不含金属杂质的氧化炉管等室中，将室的气氛加热到约500℃的温度。至约1300℃，在室中引入原子氧，并将原子氧流过碳化硅层的表面，从而在碳化硅层上形成氧化物层。在一些实施方案中，引入原子包括在室中提供源氧化物的氧气，并使氮气和氧气的混合物流过源氧化物。源氧化物可以包括氧化铝或另一氧化物如氧化锰。一些方法包括在碳化硅层上形成氧化物层，并在包括原子氧的气氛中退火氧化物层。

6. 发明申请

US20090004883A1 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen 有权
标题翻译：使用原子氧在碳化硅层上制造氧化物层的方法
公开(公告)号：US20090004883A1
公开(公告)日：2009-01-01
申请号：US11229476
申请日：2005-09-16
申请人： Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Dave Grider
发明人： Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Dave Grider
IPC分类号： H01L21/316
CPC分类号： H01L21/049 , H01L21/02164 , H01L21/02236 , H01L21/02255 , H01L21/3105 , H01L21/31658 , H01L21/32105 , Y10S438/931
摘要： Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500° C. to about 1300° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen.
摘要翻译：公开了在碳化硅层上形成氧化物层的方法，包括将碳化硅层放置在基本上不含金属杂质的氧化炉管等室中，将室的气氛加热到约500℃的温度。至约1300℃，在室中引入原子氧，并将原子氧流过碳化硅层的表面，从而在碳化硅层上形成氧化物层。在一些实施方案中，引入原子包括在室中提供源氧化物的氧气，并使氮气和氧气的混合物流过源氧化物。源氧化物可以包括氧化铝或另一氧化物如氧化锰。一些方法包括在碳化硅层上形成氧化物层，并在包括原子氧的气氛中退火氧化物层。

7. 发明授权

US07572741B2 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen 有权
标题翻译：使用原子氧在碳化硅层上制造氧化物层的方法
公开(公告)号：US07572741B2
公开(公告)日：2009-08-11
申请号：US11229476
申请日：2005-09-16
申请人： Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Dave Grider
发明人： Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Dave Grider
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/049 , H01L21/02164 , H01L21/02236 , H01L21/02255 , H01L21/3105 , H01L21/31658 , H01L21/32105 , Y10S438/931
摘要： Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500 ° C. to about 1300 ° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen.
摘要翻译：公开了在碳化硅层上形成氧化物层的方法，包括将碳化硅层放置在基本上不含金属杂质的氧化炉管等室中，将室的气氛加热到约500℃的温度。至约1300℃，在室中引入原子氧，并将原子氧流过碳化硅层的表面，从而在碳化硅层上形成氧化物层。在一些实施方案中，引入原子包括在室中提供源氧化物的氧气，并使氮气和氧气的混合物流过源氧化物。源氧化物可以包括氧化铝或另一氧化物如氧化锰。一些方法包括在碳化硅层上形成氧化物层，并在包括原子氧的气氛中退火氧化物层。

8. 发明授权

US06956238B2 SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL 有权
标题翻译：具有短路通道的碳化硅金属氧化物半导体场效应晶体管和制备具有短路通道的碳化硅金属氧化物半导体场效应晶体管的方法
公开(公告)号：US06956238B2
公开(公告)日：2005-10-18
申请号：US09911995
申请日：2001-07-24
申请人： Sei-Hyung Ryu , Anant Agarwal , Mrinal Kanti Das , Lori A. Lipkin , John W. Palmour , Ranbir Singh
发明人： Sei-Hyung Ryu , Anant Agarwal , Mrinal Kanti Das , Lori A. Lipkin , John W. Palmour , Ranbir Singh
IPC分类号： H01L21/04 , H01L21/336 , H01L29/10 , H01L29/12 , H01L29/24 , H01L29/78 , H01L29/161
CPC分类号： H01L29/7802 , H01L21/049 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7828 , H01L29/7838
摘要： Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) and methods of fabricating silicon carbide MOSFETs are provided. The silicon carbide MOSFETs have an n-type silicon carbide drift layer, spaced apart p-type silicon carbide regions in the n-type silicon carbide drift layer and having n-type silicon carbide regions therein, and a nitrided oxide layer. The MOSFETs also have n-type shorting channels extending from respective ones of the n-type silicon carbide regions through the p-type silicon carbide regions to the n-type silicon carbide drift layer. In further embodiments, silicon carbide MOSFETs and methods of fabricating silicon carbide MOSFETs are provided that include a region that is configured to self-deplete the source region, between the n-type silicon carbide regions and the drift layer, adjacent the oxide layer, upon application of a zero gate bias.
摘要翻译：提供了碳化硅金属氧化物半导体场效应晶体管（MOSFET）和制造碳化硅MOSFET的方法。碳化硅MOSFET具有n型碳化硅漂移层，n型碳化硅漂移层中间隔开的p型碳化硅区域，其中具有n型碳化硅区域和氮化氧化物层。 MOSFET还具有从n型碳化硅区域中的相应的n型碳化硅区域延伸穿过p型碳化硅区域到n型碳化硅漂移层的n型短路通道。在另外的实施例中，提供了碳化硅MOSFET和制造碳化硅MOSFET的方法，其包括被配置为在n型碳化硅区域和与氧化物层相邻的漂移层之间自耗光源区域的区域零门偏置的应用。

9. 发明授权

US06514779B1 Large area silicon carbide devices and manufacturing methods therefor 有权
标题翻译：大面积碳化硅器件及其制造方法
公开(公告)号：US06514779B1
公开(公告)日：2003-02-04
申请号：US09981523
申请日：2001-10-17
申请人： Sei-Hyung Ryu , Anant Agarwal , Craig Capell , John W. Palmour
发明人： Sei-Hyung Ryu , Anant Agarwal , Craig Capell , John W. Palmour
IPC分类号： G01R3126
CPC分类号： G01R31/2831 , H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide wafer in a predefined pattern. The silicon carbide devices have corresponding first contacts on a first face of the silicon carbide wafer. The plurality of silicon carbide devices are electrically, tested to identify ones of the plurality of silicon carbide devices which pass an electrical test. The first contact of the identified ones of the silicon carbide devices are then selectively interconnected. Devices having a plurality of selectively connected silicon carbide devices of the same type are also provided.
摘要翻译：通过在预定图案的碳化硅晶片的至少一部分上形成多个相同类型的碳化硅器件来制造碳化硅器件。碳化硅器件在碳化硅晶片的第一面上具有对应的第一接触。多个碳化硅器件被电学测试以识别通过电测试的多个碳化硅器件中的一个。所识别的碳化硅器件的第一接触然后被选择性地互连。还提供了具有相同类型的多个选择性连接的碳化硅器件的器件。

10. 发明授权

US07135359B2 Manufacturing methods for large area silicon carbide devices 有权
标题翻译：大面积碳化硅器件的制造方法
公开(公告)号：US07135359B2
公开(公告)日：2006-11-14
申请号：US10845913
申请日：2004-05-14
申请人： Anant Agarwal , Sei-Hyung Ryu , John W. Palmour
发明人： Anant Agarwal , Sei-Hyung Ryu , John W. Palmour
IPC分类号： H01L21/332
CPC分类号： H01L31/1113 , Y10S438/931
摘要： Large area silicon carbide devices, such as light-activated silicon carbide thyristors, having only two terminals are provided. The silicon carbide devices are selectively connected in parallel by a connecting plate. Silicon carbide thyristors are also provided having a portion of the gate region of the silicon carbide thyristors exposed so as to allow light of an energy greater than about 3.25 eV to activate the gate of the thyristor. The silicon carbide thyristors may be symmetric or asymmetrical. A plurality of the silicon carbide thyristors may be formed on a wafer, a portion of a wafer or multiple wafers. Bad cells may be determined and the good cells selectively connected by a connecting plate.
摘要翻译：提供仅具有两个端子的大面积碳化硅器件，例如光激活碳化硅晶闸管。碳化硅器件通过连接板选择性地并联连接。还提供了碳化硅晶闸管，其具有暴露的碳化硅晶闸管的栅极区域的一部分，以允许大于约3.25eV的能量的光来激活晶闸管的栅极。碳化硅晶闸管可以是对称的或不对称的。多个碳化硅晶闸管可以形成在晶片，晶片的一部分或多个晶片上。可以确定坏细胞，并且通过连接板选择性地连接良好的细胞。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式