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1. 发明授权

US4716322A Power-up control circuit including a comparator, Schmitt trigger, and latch 失效
标题翻译：上电控制电路包括比较器，施密特触发器和锁存器
公开(公告)号：US4716322A
公开(公告)日：1987-12-29
申请号：US843532
申请日：1986-03-25
申请人： Sebastiano D'Arrigo , Giuliano Imondi , Sossio Vergara
发明人： Sebastiano D'Arrigo , Giuliano Imondi , Sossio Vergara
IPC分类号： H03K17/22 , H03K17/30
CPC分类号： H03K17/22
摘要： A device for controlling the states of various parts of a main circuit during "power-on" operations which includes an auxiliary circuit for generating a disabling signal when the value of the main circuit supply voltage is below a threshold value for use in disabling the parts of the main circuit.
摘要翻译：一种用于在“上电”操作期间控制主电路的各个部分的状态的装置，其包括用于当主电路电源电压的值低于用于禁用部件的阈值时产生禁用信号的辅助电路的主电路。

2. 发明授权

US4736342A Method of forming a field plate in a high voltage array 失效
标题翻译：在高压阵列中形成场板的方法
公开(公告)号：US4736342A
公开(公告)日：1988-04-05
申请号：US798269
申请日：1985-11-15
申请人： Giuliano Imondi , Michael C. Smayling , Sossio Vergara , Sebastiano D'Arrigo
发明人： Giuliano Imondi , Michael C. Smayling , Sossio Vergara , Sebastiano D'Arrigo
IPC分类号： H01L21/8247 , G11C16/04 , G11C17/00 , H01L21/8246 , H01L27/10 , H01L27/112 , H01L27/115 , H01L29/788 , H01L29/792 , G11C11/34 , G11C8/00
CPC分类号： H01L27/115 , G11C16/0441
摘要： An array of electrically programmable semiconductor memory cells of a type having electrically conducting odd and even row lines, left and right column and ground lines and field oxide regions separating adjacent left and right cells. The array has a field plate over the field oxide region which extends underneath both odd and even row lines. A driver is coupled to the odd and even row lines in order to drive one of them to substantially ground potential while the other is driven high to a cell selection voltage.
摘要翻译：一种具有导电奇数和偶数行线，左右列和接地线的电可编程半导体存储器单元的阵列和分隔相邻的左右单元的场氧化物区域。该阵列在场氧化物区域上具有场板，其延伸在奇数行和偶数行之下。驱动器耦合到奇数行和偶数行，以便驱动它们中的一个基本上接地电位，而另一个被驱动到高电平单元选择电压。

3. 发明授权

US4652837A Integrated circuit oscillator 失效
标题翻译：集成电路振荡器
公开(公告)号：US4652837A
公开(公告)日：1987-03-24
申请号：US798268
申请日：1985-11-15
申请人： Sebastiano D'Arrigo , Giuliano Imondi , Sossio Vergara
发明人： Sebastiano D'Arrigo , Giuliano Imondi , Sossio Vergara
IPC分类号： H03K3/0231 , H03K5/15 , H03K3/02
CPC分类号： H03K3/0231 , H03K5/1506
摘要： An oscillator for an integrated circuit which includes a Schmitt trigger having an upper threshold voltage V.sub.H and a lower threshold voltage V.sub.L, a capacitor coupled between an input to the trigger and ground, a current generator coupled to the trigger input for charging the capacitor at a constant rate and a current generator coupled to the trigger input for discharging the capacitor at a constant rate. A charge switch in series with the charging current generator reversibly couples the charging current generator between a source of high voltage and the trigger input in response to a change in state of the trigger from a first state to a second state. A discharge switch in series with the discharging current generator reversibly couples the latter across the capacitor in response to a change in state of the trigger from the second state to the first state.
摘要翻译：一种用于集成电路的振荡器，其包括具有上阈值电压VH和较低阈值电压VL的施密特触发器，耦合到触发器和地之间的电容器，耦合到触发输入端的电流发生器，用于在电容器恒定速率和耦合到触发输入的电流发生器，以恒定速率放电电容器。与充电电流发生器串联的充电开关响应于触发器的状态从第一状态到第二状态而将充电电流发生器可逆地耦合在高电压源和触发输入之间。与放电电流发生器串联的放电开关响应于触发器的状态从第二状态到第一状态而将电容器可逆地耦合到电容器两端。

4. 发明授权

US4723114A Method and circuit for trimming the frequency of an oscillator 失效
标题翻译：调整振荡器频率的方法和电路
公开(公告)号：US4723114A
公开(公告)日：1988-02-02
申请号：US882558
申请日：1986-07-07
申请人： Sebastiano D'Arrigo , Giuliano Imondi , Sossio Vergara
发明人： Sebastiano D'Arrigo , Giuliano Imondi , Sossio Vergara
IPC分类号： H03K3/023 , H03K3/0231 , H03K3/02
CPC分类号： H03K3/0231
摘要： An integrated circuit oscillator which includes a capacitor, a reference current source coupled to the capacitor used to charge the latter, and a trigger circuit coupled to the capacitor having an upper input threshold for changing from a first state to a second state and a lower input threshold for changing from the second to the first state. A discharge circuit is coupled to the trigger circuit and is operative to discharge the capacitor in response to the trigger circuit changing states and to cease the discharging on changing back to its original state.
摘要翻译：一种集成电路振荡器，其包括电容器，耦合到用于为其充电的电容器的参考电流源以及耦合到具有用于从第一状态改变到第二状态的上输入阈值的电容器的触发电路，以及下输入从第二个状态变为第一个状态的阈值。放电电路耦合到触发电路，并且可操作地响应于触发电路改变状态而放电电容器，并且在改回其初始状态时停止放电。

5. 发明授权

US4823320A Electrically programmable fuse circuit for an integrated-circuit chip 失效
标题翻译：用于集成电路芯片的电可编程熔丝电路
公开(公告)号：US4823320A
公开(公告)日：1989-04-18
申请号：US860940
申请日：1986-05-08
申请人： Michael C. Smayling , Sebastiano D'Arrigo , Giuliano Imondi , Sossio Vergara
发明人： Michael C. Smayling , Sebastiano D'Arrigo , Giuliano Imondi , Sossio Vergara
IPC分类号： G11C16/04 , G11C16/10 , G11C16/26 , G11C7/00
CPC分类号： G11C16/26 , G11C16/0441 , G11C16/10
摘要： A fuse circuit for an integrated circuit chip which includes a non-volatile memory element, a circuit programmer for the memory element, and a read circuit for detecting the programmed states of the memory element and providing output signal levels corresponding to the programmed states. A switch is coupled to the read circuit output and switches from an open to a closed position in response to a selected output signal level.
摘要翻译：一种用于集成电路芯片的熔丝电路，其包括非易失性存储器元件，用于存储元件的电路编程器，以及用于检测存储器元件的编程状态并提供与编程状态相对应的输出信号电平的读取电路。开关耦合到读取电路输出，并响应于所选择的输出信号电平从开路切换到闭合位置。

6. 发明授权

US4706011A High voltage pulse detector with controllable current consumption 失效
标题翻译：高电压脉冲检测器，可控电流消耗
公开(公告)号：US4706011A
公开(公告)日：1987-11-10
申请号：US882557
申请日：1986-07-07
申请人： Sossio Vergara , Sebastiano D'Arrigo , Giuliano Imondi
发明人： Sossio Vergara , Sebastiano D'Arrigo , Giuliano Imondi
IPC分类号： H03K5/05 , G05F1/565 , H03K5/08
CPC分类号： G05F1/565
摘要： A circuit for sensing a voltage present on an input line higher than a supply voltage V.sub.DD which includes an isolation switch coupled between the input line and an output line, a threshold adjustment diode coupled in series with the isolation switch also between the input and output lines for establishing a voltage above V.sub.DD at which the isolation switch turns on and a constant current source coupled from an output of the sensing circuit and ground.
摘要翻译：用于感测存在于高于电源电压VDD的输入线路上的电压的电路，其包括耦合在输入线路和输出线路之间的隔离开关，阈值调节二极管也与输入和输出线路之间的隔离开关串联耦合用于建立高于VDD的电压，隔离开关导通，以及从感测电路的输出和接地耦合的恒定电流源。

7. 发明授权

US4823318A Driving circuitry for EEPROM memory cell 失效
标题翻译： EEPROM存储单元的驱动电路
公开(公告)号：US4823318A
公开(公告)日：1989-04-18
申请号：US239877
申请日：1988-09-02
申请人： Sebastiano D'Arrigo , Giuliano Imondi , Sung-Wei Lin , Manzur Gill
发明人： Sebastiano D'Arrigo , Giuliano Imondi , Sung-Wei Lin , Manzur Gill
IPC分类号： G11C17/00 , G11C16/06 , G11C16/08 , G11C16/12 , G11C16/14 , H01L21/8247 , H01L27/10 , H01L29/788 , H01L29/792 , G11C7/00
CPC分类号： G11C16/08 , G11C16/12 , G11C16/14
摘要： A circuit for applying reading, programming and erasing voltages to a wordline in a floating-gate-type EEPROM cell array comprising four P-channel transistors and two N-channel transistors as well as four switches. The circuit comprises a two-transistor inverter with a feedback transistor and three isolating transistors that prevent excessive currents and voltages from damaging internal and external circuit components.

8. 发明授权

US5265052A Wordline driver circuit for EEPROM memory cell 失效
标题翻译：用于EEPROM存储单元的字线驱动电路
公开(公告)号：US5265052A
公开(公告)日：1993-11-23
申请号：US909526
申请日：1992-06-29
申请人： Sebastiano D'Arrigo , Giuliano Imondi , Sung-Wei Lin , Gill Manzur
发明人： Sebastiano D'Arrigo , Giuliano Imondi , Sung-Wei Lin , Gill Manzur
IPC分类号： G11C8/08 , G11C16/12 , G11C7/00
CPC分类号： G11C16/12 , G11C8/08
摘要： A circuit for applying reading, programming and erasing voltages to a wordline in a floating-gate-type EEPROM cell array comprising a positive voltage switching circuit, a first isolating transistor, and a second isolating transistor. The positive voltage switching circuit may include an inverter with feedback transistor and a third isolating transistor. In one embodiment, the positive voltage switching circuit is capable of switching up to three positive voltage values and reference voltage to the wordline terminal.
摘要翻译：一种用于在包括正电压切换电路，第一隔离晶体管和第二隔离晶体管的浮动栅型EEPROM单元阵列中向字线施加读取，编程和擦除电压的电路。正电压切换电路可以包括具有反馈晶体管的反相器和第三隔离晶体管。在一个实施例中，正电压开关电路能够将最多三个正电压值和参考电压切换到字线端子。

9. 发明授权

US5157281A Level-shifter circuit for integrated circuits 失效
标题翻译：用于集成电路的电平移位电路
公开(公告)号：US5157281A
公开(公告)日：1992-10-20
申请号：US728928
申请日：1991-07-12
申请人： Giovanni Santin , Sebastiano D'Arrigo , Michael C. Smayling
发明人： Giovanni Santin , Sebastiano D'Arrigo , Michael C. Smayling
IPC分类号： G11C17/00 , G11C16/06 , H01L27/092 , H01L27/10 , H01L27/105
CPC分类号： H01L27/0928 , H01L27/105
摘要： A level-shifter circuit includes a deep N-tank to insulate the N-channel portions of transistors from the substrate. The circuit is formed on a P-type substrate coupled to reference voltage Vss. A first field-effect transistor has first and second N+ doped regions formed in a third isolating P- doped region. The third doped region is formed in a fourth isolating N- doped region, which is formed in the substrate. A second transistor has first and second N+ doped regions formed in the same isolation regions as those of the first transistor. A third field-effect transistor has first and second P+ doped regions formed in an isolating N- region that is formed in the substrate. A fourth field-effect transistor has first and second N+ doped regions formed in the same isolation N- region as that of the third transistor. The gate of the first transistor is coupled to a first input. The first doped region of the first transistor is coupled to the output and the second doped region of the first transistor is coupled to the negative voltage Vn. The third doped region is coupled to the negative voltage Vn and the fourth doped region is coupled to the supply voltage Vdd. The second transistor is connected in feedback configuration to the first transistor. The gate of the third transistor is coupled to the second input. The first doped region of the third transistor is coupled to the output and the second doped region of the third transistor is coupled to the voltage Vp, which is more positive than the supply voltage Vdd. The fifth doped region of the third transistor is also coupled to the voltage Vp. The fourth transistor is connected in feedback configuration to the third transistor.

10. 发明授权

US4074334A Protective device for a power element of an integrated circuit 失效
标题翻译：集成电路功率元件的保护装置
公开(公告)号：US4074334A
公开(公告)日：1978-02-14
申请号：US724463
申请日：1976-09-17
申请人： Sebastiano D'Arrigo , Giovanni Ghiringhelli
发明人： Sebastiano D'Arrigo , Giovanni Ghiringhelli
IPC分类号： H02H7/20 , H01L21/822 , H01L27/04 , H03F1/42 , H03F1/52 , H03K17/082
CPC分类号： H03K17/0826 , H03F1/52
摘要： A protective device limiting the current flow through a power transistor 11 in a final stage of an integrated circuit comprises, as part of that circuit, a normally nonconductive shunt transistor 31 which is turned on by a monitoring transistor 22 whenever the collector current I and the collector-emitter voltage V.sub.CE of the power transistor reach values beyond a protective curve 52 plotted on a current/voltage diagram. The base-emitter circuit of the monitoring transistor 22 is connected across an output resistor R.sub.2, in series with the power transistor 11, via a diode 21 of logarithmic conduction characteristic, that diode being also connected across the power transistor in series with a voltage-sensing network. This network includes a voltage divider R.sub.3, R.sub.5 in series with a Zener diode 33, the voltage divider being connected in parallel with a switching transistor 35 whose base is tied to a tap of the divider.

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