专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140134792A1 Solution-Processed Metal Selenide Semiconductor using Deposited Selenium Film 审中-公开
标题翻译：使用沉积的硒膜的溶液加工的金属硒化物半导体
公开(公告)号：US20140134792A1
公开(公告)日：2014-05-15
申请号：US13719052
申请日：2012-12-18
申请人： Sean Andrew Vail , Alexey Koposov , Wei Pan , Gary D. Foley , Jong-Jan Lee
发明人： Sean Andrew Vail , Alexey Koposov , Wei Pan , Gary D. Foley , Jong-Jan Lee
IPC分类号： H01L21/02
CPC分类号： H01L21/02628 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： Methods are provided for fabricating a solution-processed metal and mixed-metal selenide semiconductor using a selenium (Se) film layer. One aspect provides a conductive substrate and deposits a first Se film layer over the conductive substrate. A first solution, including a first material set of metal salts, metal complexes, or combinations thereof, is dissolved in a solvent and deposited on the first Se film layer. A first intermediate film comprising metal precursors is formed from corresponding members of the first material set. In one aspect, a plurality of intermediate films is formed using metal precursors from the first material set or a different material set. In another aspect, a second Se film layer is formed overlying the intermediate film(s). Thermal annealing is performed in an environment including hydrogen (H2), hydrogen selenide (H2Se), or Se/H2. The metal precursors are transformed in the intermediate film(s), and a metal selenide-containing semiconductor is formed.
摘要翻译：提供了使用硒（Se）膜层制造溶液处理金属和混合金属硒化物半导体的方法。一个方面提供一种导电衬底并且在导电衬底上沉积第一Se膜层。包括金属盐，金属络合物或其组合的第一材料组合的第一溶液溶解在溶剂中并沉积在第一Se膜层上。包含金属前体的第一中间膜由第一材料组的相应构件形成。在一个方面，使用来自第一材料组或不同材料组的金属前体形成多个中间膜。在另一方面，形成覆盖中间膜的第二Se膜层。在包括氢（H 2），硒化氢（H 2 Se）或Se / H 2的环境中进行热退火。金属前体在中间膜中转变，形成含金属硒化物的半导体。

2. 发明申请

US20140116509A1 Solid-State Dye-Sensitized Solar Cell Using Oxidative Dopant 审中-公开
标题翻译：使用氧化掺杂剂的固态染料敏化太阳能电池
公开(公告)号：US20140116509A1
公开(公告)日：2014-05-01
申请号：US13664256
申请日：2012-10-30
申请人： Sean Andrew Vail , Alexey Koposov , Wei Pan , Gary D. Foley , Jong-Jan Lee
发明人： Sean Andrew Vail , Alexey Koposov , Wei Pan , Gary D. Foley , Jong-Jan Lee
IPC分类号： H01L51/00 , H01B1/12
CPC分类号： H01L51/4226 , H01L51/002 , H01L51/0058 , Y02E10/549
摘要： A solid-state hole transport composite material (ssHTM) is provided. The ssHTM is made from a neutral charge first p-type organic semiconductor, and a chemically oxidized first p-type semiconductor, where the dopants are silver(I) containing materials. A reduced form of the silver(I) containing material is also retained as functional component in the ssHTM. In one aspect, the silver(I) containing material is silver bis(trifluoromethanesulfonyl)imide (TFSI). In another aspect, the first p-type organic semiconductor is 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-OMeTAD). In one variation, the ssHTM additionally includes a first p-type organic semiconductor doped with an ionic dopant such as lithium (Li+), sodium (Na+), potassium (K+), or combinations of the above-mentioned materials. Also provided are a method for synthesizing the above-described ssHTM, and a solid-state dye solar cell (ssDSC) fabricated from the ssHTM.
摘要翻译：提供固态空穴传输复合材料（ssHTM）。 ssHTM由中性电荷第一p型有机半导体和化学氧化的第一p型半导体制成，其中掺杂剂是含银（I）的材料。含有银（I）的材料的还原形式也作为ssHTM中的功能组分保留。一方面，含有银（I）的材料是双（三氟甲磺酰）酰亚胺（TFSI）。另一方面，第一p型有机半导体是2,2'，7,7'-四（N，N-二 - 对甲氧基苯胺）-9,9'-螺二芴（Spiro-OMeTAD）。在一个实施方案中，ssHTM还包括掺杂有离子掺杂剂如锂（Li +），钠（Na +），钾（K +）或上述材料的组合的第一p型有机半导体。还提供了合成上述ssHTM的方法和由ssHTM制造的固态染料太阳能电池（ssDSC）。

3. 发明授权

US08809113B2 Solution-processed metal-selenide semiconductor using selenium nanoparticles 有权
标题翻译：使用硒纳米粒子的溶液处理的金属硒化物半导体
公开(公告)号：US08809113B2
公开(公告)日：2014-08-19
申请号：US13674005
申请日：2012-11-10
申请人： Sean Andrew Vail , Alexey Koposov , Jong-Jan Lee
发明人： Sean Andrew Vail , Alexey Koposov , Jong-Jan Lee
IPC分类号： H01L31/032 , C09D11/00 , B82Y30/00 , B82Y40/00
CPC分类号： H01L31/0326 , B82Y30/00 , B82Y40/00 , C09D11/00 , C09D11/005 , C09D11/54 , H01L21/02425 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/0322 , Y02E10/541
摘要： A method is provided for forming a solution-processed metal and mixed-metal selenide semiconductor using selenium (Se) nanoparticles (NPs). The method forms a first solution including SeNPs dispersed in a solvent. Added to the first solution is a second solution including a first material set of metal salts, metal complexes, or combinations thereof, which are dissolved in a solvent, forming a third solution. The third solution is deposited on a conductive substrate, forming a first intermediate film comprising metal precursors, from corresponding members of the first material set, and embedded SeNPs. As a result of thermally annealing, the metal precursors are transformed and the first intermediate film is selenized, forming a first metal selenide-containing semiconductor. In one aspect, the first solution further comprises ligands for the stabilization of SeNPs, which are liberated during thermal annealing. In another aspect, the metal selenide-containing semiconductor comprises copper, indium, gallium diselenide (CIGS).
摘要翻译：提供了使用硒（Se）纳米颗粒（NP）形成溶液处理金属和混合金属硒化物半导体的方法。该方法形成包含分散在溶剂中的SeNP的第一溶液。添加到第一溶液中是第二溶液，其包括溶解在溶剂中的第一组金属盐，金属络合物或其组合，形成第三溶液。第三溶液沉积在导电基底上，形成包含金属前体的第一中间膜，来自第一材料组的相应构件和嵌入的SeNP。作为热退火的结果，金属前体被转化并且第一中间膜被硒化，形成第一含金属硒化物的半导体。在一个方面，第一溶液还包含用于稳定SeNP的配体，其在热退火期间释放。另一方面，含金属硒化物的半导体包括铜，铟，二硒化镓（CIGS）。

4. 发明申请

US20140162400A1 Alkali Metal-Doped Solution-Processed Metal Chalcogenides 有权
标题翻译：碱金属掺杂溶液处理金属硫族化物
公开(公告)号：US20140162400A1
公开(公告)日：2014-06-12
申请号：US13773283
申请日：2013-02-21
申请人： Sean Vail , Gary Foley , Alexey Koposov
发明人： Sean Vail , Gary Foley , Alexey Koposov
IPC分类号： H01L21/02
CPC分类号： H01L21/02628 , H01L21/02425 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： A method is provided for forming an alkali metal-doped solution-processed metal chalcogenide. A first solution is formed that includes a first material group of metal salts, metal complexes, or combinations thereof, dissolved in a solvent. The first material group may include one or more of the following elements: copper (Cu), indium (In), and gallium (Ga). An alkali metal-containing material is added to the first solution, and the first solution is deposited on a conductive substrate. The alkali metal-containing material may be sodium (Na). An alkali metal-doped first intermediate film results, comprising metal precursors from corresponding members of the first material group. Then, thermally annealing is performed in an environment of selenium (Se), Se and hydrogen (H2), hydrogen selenide (H2Se), sulfur (S), S and H2, hydrogen sulfide (H2S), or combinations thereof. The metal precursors in the alkali metal-doped first intermediate film are transformed, and an alkali metal-doped chalcogenide layer is formed.
摘要翻译：提供了形成碱金属掺杂溶液处理金属硫族化物的方法。形成第一溶液，其包括溶解在溶剂中的金属盐，金属络合物或其组合的第一材料组。第一材料组可以包括以下元素中的一种或多种：铜（Cu），铟（In）和镓（Ga）。向第一溶液中加入含碱金属的材料，并将第一溶液沉积在导电基材上。含碱金属的材料可以是钠（Na）。得到包含碱金属掺杂的第一中间膜，其包含来自第一材料组的相应构件的金属前体。然后，在硒（Se），Se和氢（H2），硒化氢（H2Se），硫（S），S和H2，硫化氢（H2S）或其组合的环境中进行热退火。碱金属掺杂的第一中间膜中的金属前体被转化，形成碱金属掺杂的硫族化物层。

5. 发明申请

US20140091278A1 Surface Treatment of Nanocrystal Quantum Dots After Film Deposition 有权
标题翻译：膜沉积后纳米晶体量子点的表面处理
公开(公告)号：US20140091278A1
公开(公告)日：2014-04-03
申请号：US13630075
申请日：2012-09-28
申请人： Milan Sykora , Alexey Koposov , Nobuhiro Fuke
发明人： Milan Sykora , Alexey Koposov , Nobuhiro Fuke
IPC分类号： H01L51/46 , H01L51/48
CPC分类号： H01L51/4226 , Y02E10/549
摘要： Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.
摘要翻译：提供了在膜沉积之后对纳米晶体量子点进行表面处理的方法，以交换用于交换配体的量子点的天然配体，其导致从纳米晶体的电荷提取的改进。

6. 发明授权

US08946546B2 Surface treatment of nanocrystal quantum dots after film deposition 有权
标题翻译：膜沉积后纳米晶体量子点的表面处理
公开(公告)号：US08946546B2
公开(公告)日：2015-02-03
申请号：US13630075
申请日：2012-09-28
申请人： Milan Sykora , Alexey Koposov , Nobuhiro Fuke
发明人： Milan Sykora , Alexey Koposov , Nobuhiro Fuke
IPC分类号： H01L31/042
CPC分类号： H01L51/4226 , Y02E10/549
摘要： Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.
摘要翻译：提供了在膜沉积之后对纳米晶体量子点进行表面处理的方法，以交换用于交换配体的量子点的天然配体，其导致从纳米晶体的电荷提取的改进。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式