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1. 发明申请

US20170011759A1 SENSOR STABILIZATION IN A MULTIPLE SENSOR MAGNETIC REPRODUCING DEVICE 有权
标题翻译：多传感器磁传播装置中的传感器稳定性
公开(公告)号：US20170011759A1
公开(公告)日：2017-01-12
申请号：US14793988
申请日：2015-07-08
申请人： Seagate Technology LLC
发明人： Zhiguo Ge , Shaun E. McKinlay , Eric W. Singleton , LiWen Tan , Jae Young Yi
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3932 , G11B5/115 , G11B5/1272 , G11B5/3912 , G11B5/3954 , G11B5/3974
摘要： A multi-sensor reader that includes a first sensor that has a sensing layer with a magnetization that changes according to an external magnetic field. The first sensor also includes first and second side biasing magnets having a magnetization substantially along a first direction. The first and second side biasing magnets align the magnetization of the sensing layer substantially along the first direction when the sensing layer is not substantially influenced by the external magnetic field. The multi-sensor reader further includes a second sensor that is stacked over the first sensor. The second sensor includes a reference layer that has a magnetization that is set substantially along a second direction. The first sensor further includes at least one sensor-stabilization feature that counteracts an influence of a magnetic field utilized to set the magnetization of the reference layer of the second sensor in the second direction on the magnetization of at least one of the first and second side biasing magnets in the first direction.
摘要翻译：一种多传感器读取器，其包括具有根据外部磁场而变化的磁化的感测层的第一传感器。第一传感器还包括具有基本沿着第一方向的磁化的第一和第二侧偏置磁体。当感测层基本上不受外部磁场的影响时，第一和第二侧偏置磁体基本上沿着第一方向对准感测层的磁化。多传感器读取器还包括堆叠在第一传感器上的第二传感器。第二传感器包括具有基本沿第二方向设定的磁化的参考层。第一传感器还包括至少一个传感器稳定特征，其抵消用于将第二传感器的参考层的磁化在第二方向上的磁场的影响抵抗第一和第二侧中的至少一个的磁化沿第一方向偏压磁铁。

2. 发明申请

US20180094346A1 METHODS OF FORMING MGO BARRIER LAYER 审中-公开
公开(公告)号：US20180094346A1
公开(公告)日：2018-04-05
申请号：US15827755
申请日：2017-11-30
申请人： Seagate Technology LLC
发明人： Qing He , Jae Young Yi , Eric W. Singleton
IPC分类号： C23C14/08 , C23C14/58 , C23C14/56 , C23C28/00
CPC分类号： C23C14/081 , B82Y25/00 , C23C14/568 , C23C14/5806 , C23C28/32 , C23C28/322 , C23C28/345 , G11B5/3163 , G11B5/3909
摘要： A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.

3. 发明申请

US20160365104A1 MAGNETORESISTIVE SENSOR FABRICATION 审中-公开
标题翻译：磁传感器制造
公开(公告)号：US20160365104A1
公开(公告)日：2016-12-15
申请号：US14740116
申请日：2015-06-15
申请人： Seagate Technology LLC
发明人： Zhiguo Ge , Shaun E. McKinlay , Eric W. Singleton , LiWen Tan , Jae Young Yi
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G11B5/397 , G11B5/3974 , G11B5/398
摘要： Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.
摘要翻译：本文描述和要求保护的实施方案包括读取器结构，包括第一读取器，包括传感器堆叠和顶部屏蔽结构，顶部屏蔽结构包括合成反铁磁屏蔽（SAF）结构，其包括至少包括一层NiFe 和杂质添加剂，RKKY耦合层RKKY耦合层（例如，Ru层）和钉扎层。在另一实施方案中，第一读取器的SAF屏蔽结构的RL至少包括一层非晶磁性材料。然而，在另一实施方式中，SAF屏蔽结构包括在SAF屏蔽RL之下，SAF屏蔽RL内或SAF屏蔽RL和SAF屏蔽Ru之间的非晶磁性材料的插入层。

4. 发明授权

US09890449B2 Methods of forming MgO barrier layer 有权
公开(公告)号：US09890449B2
公开(公告)日：2018-02-13
申请号：US14699190
申请日：2015-04-29
申请人： Seagate Technology LLC
发明人： Qing He , Jae Young Yi , Eric W. Singleton
IPC分类号： C23C14/00 , C23C14/08 , G11B5/39 , C23C28/00 , C23C14/56 , C23C14/58 , G11B5/31 , B82Y25/00
CPC分类号： C23C14/081 , B82Y25/00 , C23C14/568 , C23C14/5806 , C23C28/32 , C23C28/322 , C23C28/345 , G11B5/3163 , G11B5/3909
摘要： A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.

5. 发明授权

US09552834B1 Stabilization of one or more upper sensors in multi-sensor readers 有权
标题翻译：在多传感器读取器中稳定一个或多个上传感器
公开(公告)号：US09552834B1
公开(公告)日：2017-01-24
申请号：US14867836
申请日：2015-09-28
申请人： Seagate Technology LLC
发明人： Victor Boris Sapozhnikov , Steven P. Bozeman , Mohammed Shariat Ullah Patwari , LiWen Tan , Jae Young Yi , Eric W. Singleton
IPC分类号： G11B5/39
CPC分类号： G11B5/3951 , G11B5/3912
摘要： A multi-sensor reader that includes a first sensor that has a first sensor stack, which includes a sensing layer that has a magnetization that changes according to an external magnetic field. The first sensor also includes a first seed element below the first sensor stack. The multi-sensor reader also includes a second sensor stacked over the first sensor. The second sensor includes a second sensor stack, which includes a sensing layer that has a magnetization that changes according to the external magnetic field. The second sensor also includes a second seed element below the second sensor stack. The second seed element is structurally different from the first seed element and includes a stabilization feature.
摘要翻译：一种多传感器读取器，其包括具有第一传感器堆叠的第一传感器，其包括具有根据外部磁场而变化的磁化的感测层。第一传感器还包括位于第一传感器堆栈下方的第一种子元件。多传感器读取器还包括堆叠在第一传感器上的第二传感器。第二传感器包括第二传感器堆，其包括具有根据外部磁场而变化的磁化的感测层。第二传感器还包括位于第二传感器堆叠下方的第二种子元件。第二种子元件在结构上不同于第一种子元件并且包括稳定特征。

6. 发明授权

US10090008B2 Magnetoresistive sensor fabrication 有权
公开(公告)号：US10090008B2
公开(公告)日：2018-10-02
申请号：US15631372
申请日：2017-06-23
申请人： Seagate Technology LLC
发明人： Zhiguo Ge , Shaun E. McKinlay , Eric W. Singleton , LiWen Tan , Jae Young Yi
IPC分类号： G11B5/39
摘要： Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

7. 发明授权

US09870791B1 Stabilization of one or more upper sensors in multi-sensor readers 有权
公开(公告)号：US09870791B1
公开(公告)日：2018-01-16
申请号：US15489180
申请日：2017-04-17
申请人： Seagate Technology LLC
发明人： Victor Sapozhnikov , Steven P. Bozeman , Mohammed Shariat Ullah Patwari , LiWen Tan , Jae Young Yi , Eric W. Singleton
IPC分类号： G11B5/39 , G11B5/11 , G11B5/127
CPC分类号： G11B5/3958 , G11B5/112 , G11B5/1272 , G11B5/3912
摘要： A multi-sensor reader that includes a first sensor that has a first sensor stack, which includes a sensing layer that has a magnetization that changes according to an external magnetic field. The first sensor also includes a first seed layer below the first sensor stack. The multi-sensor reader also includes a second sensor stacked over the first sensor. The second sensor includes a second sensor stack, which includes a sensing layer that has a magnetization that changes according to the external magnetic field. The second sensor also includes a second seed layer below the second sensor stack. A stabilization element is included to maintain a magnetization direction of the second seed layer and to stabilize the second seed layer.

8. 发明授权

US09536549B1 Multiple sensor magnetic reproducing device with reduced inter-sensor spacing 有权
标题翻译：具有减小传感器间距的多传感器磁再现装置
公开(公告)号：US09536549B1
公开(公告)日：2017-01-03
申请号：US14826798
申请日：2015-08-14
申请人： Seagate Technology LLC
发明人： Zhiguo Ge , Victor Sapozhnikov , Shaun E. Mckinlay , Eric W. Singleton , Jae Young Yi , Mohammed Shariat Ullah Patwari
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3912 , G11B5/3948 , G11B5/397
摘要： A multi-sensor reader that includes a first sensor that has a sensor stack, which includes a free layer (FL) that has a magnetization that changes according to an external magnetic field. The first sensor also includes a shielding structure that is positioned over the sensor stack. The multi-sensor reader also includes a second sensor stacked over the first sensor. The second sensor includes a sensor stack, which includes a FL that has a magnetization that changes according to the external magnetic field. The multi-sensor reader further includes an isolation layer between the first sensor and the second sensor. A FL-to-FL spacing reduction feature is included in at least one of the isolation layer or the shielding structure.
摘要翻译：一种多传感器读取器，其包括具有传感器堆叠的第一传感器，该传感器堆叠包括具有根据外部磁场而变化的磁化的自由层（FL）。第一传感器还包括位于传感器堆叠上方的屏蔽结构。多传感器读取器还包括堆叠在第一传感器上的第二传感器。第二传感器包括传感器堆，其包括具有根据外部磁场而变化的磁化的FL。多传感器读取器还包括在第一传感器和第二传感器之间的隔离层。在隔离层或屏蔽结构中的至少一个中包括FL-to-FL间隔缩小特征。

9. 发明申请

US20170294199A1 MAGNETORESISTIVE SENSOR FABRICATION 审中-公开
公开(公告)号：US20170294199A1
公开(公告)日：2017-10-12
申请号：US15631372
申请日：2017-06-23
申请人： Seagate Technology LLC
发明人： Zhiguo Ge , Shaun E. McKinlay , Eric W. Singleton , LiWen Tan , Jae Young Yi
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G11B5/397 , G11B5/3974 , G11B5/398
摘要： Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

10. 发明授权

US09685177B2 Sensor stabilization in a multiple sensor magnetic reproducing device 有权
公开(公告)号：US09685177B2
公开(公告)日：2017-06-20
申请号：US14793988
申请日：2015-07-08
申请人： Seagate Technology LLC
发明人： Zhiguo Ge , Shaun E. Mckinlay , Eric W. Singleton , LiWen Tan , Jae Young Yi
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3932 , G11B5/115 , G11B5/1272 , G11B5/3912 , G11B5/3954 , G11B5/3974
摘要： A multi-sensor reader that includes a first sensor that has a sensing layer with a magnetization that changes according to an external magnetic field. The first sensor also includes first and second side biasing magnets having a magnetization substantially along a first direction. The first and second side biasing magnets align the magnetization of the sensing layer substantially along the first direction when the sensing layer is not substantially influenced by the external magnetic field. The multi-sensor reader further includes a second sensor that is stacked over the first sensor. The second sensor includes a reference layer that has a magnetization that is set substantially along a second direction. The first sensor further includes at least one sensor-stabilization feature that counteracts an influence of a magnetic field utilized to set the magnetization of the reference layer of the second sensor in the second direction on the magnetization of at least one of the first and second side biasing magnets in the first direction.

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