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1. 发明授权

US06204069B1 Lightly donor doped electrodes for high-dielectric-constant materials 失效
公开(公告)号：US06204069B1
公开(公告)日：2001-03-20
申请号：US08317108
申请日：1994-10-03
申请人： Scott R. Summerfelt , Howard R. Beratan , Bruce Gnade
发明人： Scott R. Summerfelt , Howard R. Beratan , Bruce Gnade
IPC分类号： H01L2100
CPC分类号： H01G4/008 , H01L21/31691 , H01L27/11502 , H01L28/56 , Y10S257/917 , Y10T29/43 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e.g. lightly La doped BST 34), and a high-dielectric-constant material layer (e.g. undoped BST 36) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions. The lightly donor doped perovskite can be deposited and etched by effectively the same techniques that are developed for the high-dielectric-constant material. The same equipment may used to deposit and etch both the perovskite electrode and the dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.

2. 发明授权

US06593638B1 Lightly donor doped electrodes for high-dielectric-constant materials 失效
标题翻译：用于高介电常数材料的轻掺杂掺杂电极
公开(公告)号：US06593638B1
公开(公告)日：2003-07-15
申请号：US08477957
申请日：1995-06-07
申请人： Scott R. Summerfelt , Howard R. Beratan , Bruce Gnade
发明人： Scott R. Summerfelt , Howard R. Beratan , Bruce Gnade
IPC分类号： H01L2900
CPC分类号： H01G4/008 , H01L21/31691 , H01L27/11502 , H01L28/56 , Y10S257/917 , Y10T29/43 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e.g. lightly La doped BST 34), and a high-dielectric-constant material layer (e.g. undoped BST 36) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions. The lightly donor doped perovskite can be deposited and etched by effectively the same techniques that are developed for the high-dielectric-constant material. The same equipment may used to deposit and etch both the perovskite electrode and the dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译：本发明的优选实施方案包括导电轻掺杂的钙钛矿层（例如轻掺杂的La掺杂的BST 34）和覆盖导电的轻掺杂的钙钛矿层的高介电常数材料层（例如未掺杂的BST 36）。导电轻掺杂的钙钛矿层提供了与高介电常数材料层基本上化学和结构稳定的电连接。掺杂的轻掺杂钙钛矿的电阻通常比未掺杂，受体掺杂或重掺杂的HDC材料具有更低的电阻。导电（或电阻）材料的施主掺杂量通常取决于工艺条件（例如温度，气氛，晶粒尺寸，膜厚度和组成）。如果钙钛矿暴露于还原条件下，该电阻率可以进一步降低。通过有效地为高介电常数材料开发的相同技术，可以沉积和蚀刻轻掺杂的钙钛矿。相同的设备可用于沉积和蚀刻钙钛矿电极和电介质。这些结构也可以用于多层电容器和其他薄膜铁电体器件，例如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。

3. 发明授权

US06319542B1 Lightly donor doped electrodes for high-dielectric-constant materials 失效
标题翻译：用于高介电常数材料的轻掺杂掺杂电极
公开(公告)号：US06319542B1
公开(公告)日：2001-11-20
申请号：US08451853
申请日：1995-05-26
申请人： Scott R. Summerfelt , Howard R. Beratan , Bruce Gnade
发明人： Scott R. Summerfelt , Howard R. Beratan , Bruce Gnade
IPC分类号： B05D512
CPC分类号： H01G4/008 , H01L21/31691 , H01L27/11502 , H01L28/56 , Y10S257/917 , Y10T29/43 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e.g. lightly La doped BST 34), and a high-dielectric-constant material layer (e.g. undoped BST 36) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions. The lightly donor doped perovskite can be deposited and etched by effectively the same techniques that are developed for the high-dielectric-constant material. The same equipment may used to deposit and etch both the perovskite electrode and the dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译：本发明的优选实施方案包括导电轻掺杂的钙钛矿层（例如轻掺杂的La掺杂的BST 34）和覆盖导电的轻掺杂的钙钛矿层的高介电常数材料层（例如未掺杂的BST 36）。导电轻掺杂的钙钛矿层提供了与高介电常数材料层基本上化学和结构稳定的电连接。掺杂的轻掺杂钙钛矿的电阻通常比未掺杂，受体掺杂或重掺杂的HDC材料具有更低的电阻。导电（或电阻）材料的施主掺杂量通常取决于工艺条件（例如温度，气氛，晶粒尺寸，膜厚度和组成）。如果钙钛矿暴露于还原条件下，该电阻率可以进一步降低。通过有效地为高介电常数材料开发的相同技术，可以沉积和蚀刻轻掺杂的钙钛矿。相同的设备可用于沉积和蚀刻钙钛矿电极和电介质。这些结构也可以用于多层电容器和其他薄膜铁电体器件，例如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。

4. 发明授权

US08404527B2 Electronic textiles with electronic devices on ribbons 有权
标题翻译：带有电子设备的电子纺织品
公开(公告)号：US08404527B2
公开(公告)日：2013-03-26
申请号：US12886212
申请日：2010-09-20
申请人： Bruce Gnade
发明人： Bruce Gnade
IPC分类号： H01L21/00
CPC分类号： D03D15/00 , D03D1/0088 , D03D15/0088 , D10B2101/20 , D10B2401/041 , D10B2401/16 , G11C13/0014 , G11C17/16 , G11C17/18 , H01L27/283 , H01L51/0097 , H01L2251/5338 , Y02E10/549 , Y02P70/521 , Y10T29/49826
摘要： Ribbons containing e.g. inorganic NMOS devices are assembled in electrical contact with ribbons containing e.g. PMOS devices (preferably organic) to enable flexible electronic textile circuits to be inexpensive and practical for a wide variety of functions. The use of ribbons provides flexibility, reduces costs, and allows testing during assembly and different processes to be efficiently used for different components. This is apparently the first time that ribbons (especially inorganic-device-containing ribbons) have been interconnected to form a flexible CMOS electronic textile.
摘要翻译：含有例如无机NMOS器件组装成与含有例如硅酸盐的带电接触。 PMOS器件（优选是有机的），以使得柔性电子纺织品电路对于各种各样的功能来说是廉价和实用的。色带的使用提供了灵活性，降低了成本，并允许组装过程中的测试和不同的过程被有效地用于不同的组件。这显然是第一次将带（特别是无机装置的带）互连以形成柔性CMOS电子织物。

5. 发明申请

US20080178453A1 Electronic Textiles with Electronic Devices on Ribbons 有权
标题翻译：带电子设备的电子纺织品
公开(公告)号：US20080178453A1
公开(公告)日：2008-07-31
申请号：US12021677
申请日：2008-01-29
申请人： Bruce Gnade
发明人： Bruce Gnade
IPC分类号： B23P11/00
CPC分类号： D03D15/00 , D03D1/0088 , D03D15/0088 , D10B2101/20 , D10B2401/041 , D10B2401/16 , G11C13/0014 , G11C17/16 , G11C17/18 , H01L27/283 , H01L51/0097 , H01L2251/5338 , Y02E10/549 , Y02P70/521 , Y10T29/49826
摘要： Ribbons containing e.g. inorganic NMOS devices are assembled in electrical contact with ribbons containing e.g. PMOS devices (preferably organic) to enable flexible electronic textile circuits to be inexpensive and practical for a wide variety of functions. The use of ribbons provides flexibility, reduces costs, and allows testing during assembly and different processes to be efficiently used for different components. This is apparently the first time that ribbons (especially inorganic-device-containing ribbons) have been interconnected to form a flexible CMOS electronic textile.
摘要翻译：含有例如无机NMOS器件组装成与含有例如硅酸盐的带电接触。 PMOS器件（优选是有机的），以使得柔性电子纺织品电路对于各种各样的功能来说是廉价和实用的。色带的使用提供了灵活性，降低了成本，并允许组装过程中的测试和不同的过程被有效地用于不同的组件。这显然是第一次将带（特别是无机装置的带）互连以形成柔性CMOS电子织物。

6. 发明申请

US20050074913A1 Stiction resistant release process 有权
标题翻译：抗静电释放过程
公开(公告)号：US20050074913A1
公开(公告)日：2005-04-07
申请号：US10680021
申请日：2003-10-07
申请人： Igor Gory , Bruce Gnade , Fadziso Mantiziba
发明人： Igor Gory , Bruce Gnade , Fadziso Mantiziba
IPC分类号： B81B3/00 , H01L21/00
CPC分类号： B81C1/00928 , H01L21/67023
摘要： A method of releasing a micro-electronic device formed over an insulator of a silicon-on-insulator (SOI) substrate. In one embodiment, the release method includes etching at least a portion of the insulator to separate the micro-electronic device from the SOI substrate, rinsing at least the micro-electronic device, exposing at least the micro-electronic device to a micro-sphere solution and removing the micro-electronic device from the SOI substrate. The release method may also include exposing the micro-electronic device to an etching plasma to substantially expunge the micro-sphere solution.
摘要翻译：一种释放在绝缘体上硅（SOI）衬底的绝缘体上形成的微电子器件的方法。在一个实施例中，释放方法包括蚀刻绝缘体的至少一部分以将微电子器件与SOI衬底分离，至少冲洗微电子器件，将至少微电子器件暴露于微球并从SOI衬底移除微电子器件。释放方法还可以包括将微电子器件暴露于蚀刻等离子体以基本上清除微球溶液。

7. 发明申请

US20050007001A1 Process and apparatus for energy storage and release 审中-公开
标题翻译：能量储存和释放的过程和设备
公开(公告)号：US20050007001A1
公开(公告)日：2005-01-13
申请号：US10846045
申请日：2004-05-14
申请人： Timothy Imholt , David Allara , Bruce Gnade , James Roberts
发明人： Timothy Imholt , David Allara , Bruce Gnade , James Roberts
IPC分类号： H01J17/26 , H01M4/86 , H01M8/00 , H05B6/64
CPC分类号： H01M8/04208 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , H01M4/926 , H01M8/04216
摘要： The present invention provides a process and apparatus to store and deliver controlled amounts of heat and light energy, from low levels to very intense levels, to microscopic locations in a object remotely, not necessarily involving direct contact with the object, where the energy delivered remotely is less than the energy released by the object. More specifically, the present invention comprises a novel and previously unanticipated source of local energy production by the exposure of carbon nanotubes by EM radiation in the radio and microwave spectral regions. The present invention comprising a process and apparatus to remotely delivering highly controlled amounts of EM to the carbon nanotubes.
摘要翻译：本发明提供一种方法和装置，用于将受控量的热和光能量从低水平到非常强烈的水平存储到远程物体中的微观位置，而不一定涉及与物体的直接接触，其中远程传送的能量小于物体释放的能量。更具体地，本发明包括通过在无线电和微波频谱区域中通过EM辐射暴露碳纳米管的新颖且先前未预料到的局部能量产生的来源。本发明包括一种将高度受控量的EM远程输送到碳纳米管的方法和装置。

8. 发明授权

US5569058A Low density, high porosity material as gate dielectric for field emission device 失效
公开(公告)号：US5569058A
公开(公告)日：1996-10-29
申请号：US461230
申请日：1995-06-05
申请人： Bruce Gnade , Chih-Chen Cho , Jules D. Levine
发明人： Bruce Gnade , Chih-Chen Cho , Jules D. Levine
IPC分类号： H01J1/304 , H01J1/30 , H01J9/18
CPC分类号： H01J1/3042 , H01J2201/319 , H01J2329/00
摘要： A porous dielectric material such as silica-based aerogel is used as the dielectric layer 48 between the gate and the cathode on the emitter plate 12 of a field emission device. Aerogel, which can have a relative dielectric constant as low as 1.03, is deposited over the resistive layer 44 of the emitter plate 12. Metal layer 49, functioning as the gate electrode, is subsequently deposited over the aerogel layer 48. The use of aerogel as a gate dielectric reduces power consumption. In a disclosed embodiment, aerogel layer 48 is comprised of sublayers 48a, 48b, and 48c of aerogels of differing densities, thereby providing better adhesion of the aerogel gate dielectric to both the resistive layer 44 and metal layer 49. Methods of fabricating the aerogel gate dielectric are disclosed.

9. 发明授权

US08381396B2 Method of assembling a textile display 有权
标题翻译：组装纺织品展示的方法
公开(公告)号：US08381396B2
公开(公告)日：2013-02-26
申请号：US12974741
申请日：2010-12-21
申请人： Bruce Gnade
发明人： Bruce Gnade
IPC分类号： H01R43/00
CPC分类号： H01L27/3262 , D03D1/00 , D03D1/0088 , D03D15/0088 , D10B2403/02431 , H01L51/0031 , Y10T29/49002 , Y10T29/49174 , Y10T29/49195 , Y10T29/49204 , Y10T29/49208 , Y10T29/49826
摘要： Ribbons containing e.g. inorganic NMOS devices are assembled in electrical contact with ribbons containing e.g. PMOS devices (preferably organic) to enable flexible electronic textile circuits, e.g. displays, to be inexpensive and practical for a wide for a variety of functions. The use of ribbons provides flexibility, reduces costs, and allows testing during assembly and different processes to be efficiently used for different components. This is apparently the first time that ribbons (especially inorganic-device-containing ribbons) have been interconnected to form a flexible CMOS electronic textile.
摘要翻译：含有例如无机NMOS器件组装成与含有例如硅酸盐的带电接触。 PMOS器件（优选为有机的），以实现柔性电子织物电路，例如。显示器，为广泛的各种功能而廉价和实用。色带的使用提供了灵活性，降低了成本，并允许组装过程中的测试和不同的过程被有效地用于不同的组件。这显然是第一次将带（特别是无机装置的带）互连以形成柔性CMOS电子织物。

10. 发明授权

US07941919B2 Method of assembling an electronic textile 失效
标题翻译：组装电子纺织品的方法
公开(公告)号：US07941919B2
公开(公告)日：2011-05-17
申请号：US12021663
申请日：2008-01-29
申请人： Bruce Gnade
发明人： Bruce Gnade
IPC分类号： H01R43/00
CPC分类号： H01L27/3262 , D03D1/00 , D03D1/0088 , D03D15/0088 , D10B2403/02431 , H01L51/0031 , Y10T29/49002 , Y10T29/49174 , Y10T29/49195 , Y10T29/49204 , Y10T29/49208 , Y10T29/49826
摘要： Ribbons containing e.g. inorganic NMOS devices are assembled in electrical contact with ribbons containing e.g. PMOS devices (preferably organic) to enable flexible electronic textile circuits, e.g. displays, to be inexpensive and practical for a wide for a variety of functions. The use of ribbons provides flexibility, reduces costs, and allows testing during assembly and different processes to be efficiently used for different components. This is apparently the first time that ribbons (especially inorganic-device-containing ribbons) have been interconnected to form a flexible CMOS electronic textile.
摘要翻译：含有例如无机NMOS器件组装成与含有例如硅酸盐的带电接触。 PMOS器件（优选为有机的），以实现柔性电子织物电路，例如。显示器，为广泛的各种功能而廉价和实用。色带的使用提供了灵活性，降低了成本，并允许组装过程中的测试和不同的过程被有效地用于不同的组件。这显然是第一次将带（特别是无机装置的带）互连以形成柔性CMOS电子织物。

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