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1. 发明申请

US20100041234A1 Process For Restoring Dielectric Properties 有权
标题翻译：恢复介电性能的工艺
公开(公告)号：US20100041234A1
公开(公告)日：2010-02-18
申请号：US12540395
申请日：2009-08-13
申请人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Mary Kathryn Haas , Laura M. Matz , Glenn Michael Mitchell , Aiping Wu , Raymond Nicholas Vrtis , John Giles Langan
发明人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Mary Kathryn Haas , Laura M. Matz , Glenn Michael Mitchell , Aiping Wu , Raymond Nicholas Vrtis , John Giles Langan
IPC分类号： H01L21/311
CPC分类号： H01L21/3105
摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.
摘要翻译：一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

2. 发明授权

US08283260B2 Process for restoring dielectric properties 有权
标题翻译：恢复介电性能的方法
公开(公告)号：US08283260B2
公开(公告)日：2012-10-09
申请号：US12540395
申请日：2009-08-13
申请人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Mary Kathryn Haas , Laura M. Matz , Glenn Michael Mitchell , Aiping Wu , Raymond Nicholas Vrtis , John Giles Langan
发明人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Mary Kathryn Haas , Laura M. Matz , Glenn Michael Mitchell , Aiping Wu , Raymond Nicholas Vrtis , John Giles Langan
IPC分类号： H01L21/302
CPC分类号： H01L21/3105
摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.
摘要翻译：一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

3. 发明授权

US06637998B2 Self evacuating micro environment system 有权
公开(公告)号：US06637998B2
公开(公告)日：2003-10-28
申请号：US09968125
申请日：2001-10-01
申请人： John Giles Langan , Wayne Thomas McDermott , Thomas Hsiao-Ling Hsiung
发明人： John Giles Langan , Wayne Thomas McDermott , Thomas Hsiao-Ling Hsiung
IPC分类号： B65G4907
CPC分类号： H01L21/67724 , H01L21/67736 , Y10S414/139 , Y10S414/14
摘要： A mobile, self-evacuating, micro-environment system for transit and storage of substrates between two or more processing chambers in the manufacture of semiconductor devices is provided where the system includes a mobile cart, a vacuum sealable container to hold the substrates, a vacuum source having a portable power source, located on the cart and capable of generating a vacuum in the container, and a docking valve to mate with a corresponding valve on each of the processing chambers, where the docking valve and the corresponding valve are securable to one another to form a substantially vacuum-tight seal and openable, while mated, to permit unloading and loading of substrates between the container and the processing chamber. A method of using the system is also provided.

4. 发明授权

US6023933A Ultra high pressure gases 失效
标题翻译：超高压气体
公开(公告)号：US6023933A
公开(公告)日：2000-02-15
申请号：US963728
申请日：1997-11-04
申请人： John Giles Langan , Wayne Thomas McDermott , Richard Carl Ockovic
发明人： John Giles Langan , Wayne Thomas McDermott , Richard Carl Ockovic
IPC分类号： G05D16/00 , F17C9/02
CPC分类号： F17C9/02 , Y10S62/924
摘要： A method and apparatus for pressurizing a high purity gas in liquefied form to an ultra high pressure gas in vapor form using a constant volume, heated vaporization vessel.
摘要翻译：一种使用恒定体积的加热蒸发容器将液化形式的高纯度气体加压成蒸汽形式的超高压气体的方法和装置。

5. 发明授权

US07013916B1 Sub-atmospheric gas delivery method and apparatus 失效
标题翻译：次气体输送方法及装置
公开(公告)号：US07013916B1
公开(公告)日：2006-03-21
申请号：US09641933
申请日：2000-08-18
申请人： Ronald Martin Pearlstein , John Giles Langan , Dao-Hong Zheng , John Irven , Benjamin Lee Hertzler
发明人： Ronald Martin Pearlstein , John Giles Langan , Dao-Hong Zheng , John Irven , Benjamin Lee Hertzler
IPC分类号： F16K11/20 , F16K31/12 , G05D7/00
CPC分类号： F16K1/305 , F16K37/0091 , F17C13/04 , F17C2205/0338 , F17C2205/035 , F17C2205/0391 , F17C2227/044 , F17C2227/048 , F17C2270/0518 , G05D16/10 , Y10T137/0379 , Y10T137/0396 , Y10T137/4245 , Y10T137/5762 , Y10T137/7069 , Y10T137/7794 , Y10T137/7796 , Y10T137/86083 , Y10T137/87917
摘要： An apparatus for containing and delivering hazardous gases at sub-atmospheric pressure from a pressurized container is provided which includes a valve body in sealed communication with an outlet orifice of the pressurized container. The outlet orifice of the pressurized container is open to an interior chamber of the pressurized container. A fluid discharge path is located in the valve body, between the outlet orifice of the pressurized container and an outlet orifice of the valve body. A pressure regulator having a pressure sensing means capable of responding to sub-atomospheric pressure, is integral to the valve body, in-line in the fluid discharge path with the pressure regulator pre-set to a pressure below atmospheric pressure to allow the gas to be delivered through the regulator from the interior chamber only when the pressure regulator senses a downstream pressure at or below the pre-set pressure. Finally, a high pressure shut-off valve integral to the valve body and in-line in the fluid discharge path and upstream from the pressure regulator is included. The gas flows through from the interior chamber of the pressurized container through the fluid discharge path, through the outlet orifice of the pressurized container, and through the outlet orifice of the valve body only when the outlet orifice is connected to a vacuum system. A method of containing and delivering hazardous gases at sub-atmospheric pressure is also provided.
摘要翻译：提供了一种用于从加压容器中容纳和传送低于大气压的有害气体的装置，其包括与加压容器的出口孔密封连通的阀体。加压容器的出口孔通向加压容器的内部室。流体排放路径位于阀体中，位于加压容器的出口孔与阀体的出口孔之间。压力调节器具有能够响应亚大气压力的压力感测装置，与压力调节器预先设定为低于大气压的压力一起在流体排放路径中与阀体成一体，以允许气体只有当压力调节器感测到等于或低于预设压力的下游压力时，才能通过调节器从内部室输送。最后，包括与阀体成一体并且在流体排放路径中并且在压力调节器上游的一体的高压截止阀。如果出口孔连接到真空系统，则气体从加压容器的内部腔室通过流体排出通道，通过加压容器的出口孔流过阀体的出口孔。还提供了一种在低于大气压的压力下容纳和输送有害气体的方法。

6. 发明授权

US06686594B2 On-line UV-Visible light halogen gas analyzer for semiconductor processing effluent monitoring 有权
标题翻译：在线紫外可见光卤素气体分析仪，用于半导体处理污水监测
公开(公告)号：US06686594B2
公开(公告)日：2004-02-03
申请号：US10003223
申请日：2001-10-29
申请人： Bing Ji , Robert Gordon Ridgeway , Eugene Joseph Karwacki, Jr. , Howard Paul Withers, Jr. , Steven Arthur Rogers , Peter James Maroulis , John Giles Langan
发明人： Bing Ji , Robert Gordon Ridgeway , Eugene Joseph Karwacki, Jr. , Howard Paul Withers, Jr. , Steven Arthur Rogers , Peter James Maroulis , John Giles Langan
IPC分类号： G01J312
CPC分类号： G01N21/31 , G01N21/33
摘要： An on-line halogen analyzer system and method of use for semiconductor processing effluent monitoring. The system includes sampling the effluent stream into an absorption cell, and passing UV-Visible light through the effluent sample in the cell. After passing through the sample the light is collected by a photo detector for real-time wavelength-selective absorption analysis. The system provides simultaneous determination of the concentrations of multiple halogen gases (e.g. F2, Cl2, Br2, and I2) in semiconductor processing effluent streams. The invention can be used for chemical vapor deposition (CVD) chamber cleaning endpoint determination and to improve fluorine utilization efficiency in remote plasma downstream CVD chamber cleaning processes.
摘要翻译：一种在线卤素分析仪系统及其半导体处理流出物监测方法。该系统包括将流出物流取样成吸收池，并将紫外可见光通过电池中的流出物样品。通过样品后，光被光电检测器收集，用于实时波长选择吸收分析。该系统同时测定半导体处理流出物流中多种卤素气体（如F2，Cl2，Br2和I2）的浓度。本发明可用于化学气相沉积（CVD）室清洁终点确定，并提高远程等离子体下游CVD室清洁过程中的氟利用效率。

7. 发明授权

US5910294A Abatement of NF.sub.3 with metal oxalates 失效
标题翻译：用金属草酸盐还原NF3
公开(公告)号：US5910294A
公开(公告)日：1999-06-08
申请号：US971545
申请日：1997-11-17
申请人： John Giles Langan , Howard Paul Withers, Jr.
发明人： John Giles Langan , Howard Paul Withers, Jr.
IPC分类号： A62D3/00 , C01D3/02 , C01D17/00 , C01B21/00 , C01B9/08 , C01J8/00
CPC分类号： C01D17/00 , C01D3/02
摘要： A process for abating NF.sub.3 by contacting it with a metal oxalate or carbonate.
摘要翻译：通过使其与金属草酸盐或碳酸盐接触来减轻NF 3的方法。

8. 发明授权

US08535760B2 Additives to silane for thin film silicon photovoltaic devices 有权
标题翻译：用于薄膜硅光伏器件的硅烷添加剂
公开(公告)号：US08535760B2
公开(公告)日：2013-09-17
申请号：US12872806
申请日：2010-08-31
申请人： Patrick Timothy Hurley , Robert Gordon Ridgeway , Katherine Anne Hutchison , John Giles Langan
发明人： Patrick Timothy Hurley , Robert Gordon Ridgeway , Katherine Anne Hutchison , John Giles Langan
IPC分类号： C23C16/24
CPC分类号： C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： Chemical additives are used to increase the rate of deposition for the amorphous silicon film (αSi:H) and/or the microcrystalline silicon film (μCSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.
摘要翻译：化学添加剂用于增加非晶硅膜（αSi：H）和/或微晶硅膜（μCSi：H）的沉积速率。改善电流以产生用于制造基于薄膜的光伏（TFPV）器件的光电导膜的太阳能级膜。

9. 发明申请

US20110061733A1 Additives to Silane for Thin Film Silicon Photovoltaic Devices 有权
标题翻译：硅烷添加剂用于薄膜硅光伏器件
公开(公告)号：US20110061733A1
公开(公告)日：2011-03-17
申请号：US12872806
申请日：2010-08-31
申请人： Patrick Timothy Hurley , Robert Gordon Ridgeway , Katherine Anne Hutchison , John Giles Langan
发明人： Patrick Timothy Hurley , Robert Gordon Ridgeway , Katherine Anne Hutchison , John Giles Langan
IPC分类号： H01L31/0376 , H01L31/18 , H01L31/0384
CPC分类号： C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： The objective of this invention is to use chemical additives to increase the rate of deposition processes for the amorphous silicon film (αSi:H) and/or the microcrystalline silicon film (μCSi:H), and improve the electrical current generating capability of the deposited films for photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.
摘要翻译：本发明的目的是使用化学添加剂来提高非晶硅膜（αSi：H）和/或微晶硅膜（μCSi：H）的沉积过程速率，并提高沉积物的电流产生能力用于制造基于薄膜的光伏（TFPV）器件的光导膜的膜。

10. 发明授权

US06837250B2 CVD chamber cleaning using mixed PFCs from capture/recycle 失效
标题翻译：使用来自捕获/回收的混合PFCs进行CVD室清洁
公开(公告)号：US06837250B2
公开(公告)日：2005-01-04
申请号：US10085249
申请日：2002-02-27
申请人： John Giles Langan , Andrew David Johnson
发明人： John Giles Langan , Andrew David Johnson
IPC分类号： C23C16/44 , C23C16/455 , B08B6/00 , B08B9/00
CPC分类号： C23C16/45593 , C23C16/4405 , C23C16/4412 , Y02C20/30 , Y10S438/905
摘要： A method of using PFCs recovered from the effluent of a CVD chamber cleaning process as an influent for the cleaning process is provided which includes the steps of selecting a first PFC gas mixture having a first ratio of C2F6 to CF4, providing the first PFC gas mixture as the influent gas to the CVD chamber to create a CVD chamber effluent gas of a second PFC gas mixture having a second ratio of C2F6 to CF4, adding virgin C2F6 or CF4 to the CVD chamber effluent gas in sufficient quantity to create a third PFC gas mixture having the first ratio of C2F6 to CF4, and using the third PFC gas mixture as the influent gas to the CVD chamber.

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