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1. 发明授权

US06800210B2 Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants 有权
标题翻译：通过用多个顺序蚀刻剂去除牺牲层来制造微机械装置的方法
公开(公告)号：US06800210B2
公开(公告)日：2004-10-05
申请号：US10154150
申请日：2002-05-22
申请人： Satyadev R. Patel , Andrew G. Huibers , Gregory P. Schaadt , Peter J. Heureux
发明人： Satyadev R. Patel , Andrew G. Huibers , Gregory P. Schaadt , Peter J. Heureux
IPC分类号： H01L21306
CPC分类号： B81C1/00476 , B81C1/00547 , B81C2201/0109 , B81C2201/0132 , B81C2201/0133 , B81C2201/112 , B82Y30/00
摘要： An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.
摘要翻译：公开了一种诸如用于形成微机械装置的蚀刻方法。该方法的一个实施例是用于释放微机械结构，包括：提供衬底; 在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体，以允许蚀刻剂气体在物理或化学和物理上移除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料，包括：执行第一蚀刻以去除硅的一部分，第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅，第二蚀刻包括提供蚀刻剂气体，其化学地但不物理地蚀刻附加的硅。

2. 发明授权

US07027200B2 Etching method used in fabrications of microstructures 有权
标题翻译：用于微结构制造中的蚀刻方法
公开(公告)号：US07027200B2
公开(公告)日：2006-04-11
申请号：US10666002
申请日：2003-09-17
申请人： Hongqin Shi , Gregory P. Schaadt , Andrew G. Huibers , Satyadev R. Patel
发明人： Hongqin Shi , Gregory P. Schaadt , Andrew G. Huibers , Satyadev R. Patel
IPC分类号： G02B26/00
CPC分类号： H01L21/67069 , B81C1/00595 , B81C2201/0132 , G02B26/0841
摘要： The present invention discloses a method and apparatus for removing the sacrificial materials in fabrications of microstructures using a vapor phase etchant recipe having a spontaneous vapor phase chemical etchant. The vapor phase etchant recipe has a mean-free-path corresponding to the minimum thickness of the sacrificial layers between the structural layers of the microstructure. This method is of particular importance in removing the sacrificial layers underneath the structural layers of the microstructure.
摘要翻译：本发明公开了一种使用具有自发气相化学蚀刻剂的气相蚀刻剂配方去除微结构制造中的牺牲材料的方法和装置。气相蚀刻剂配方具有对应于微结构的结构层之间的牺牲层的最小厚度的平均自由程。该方法在去除微结构结构层下面的牺牲层时尤其重要。

3. 发明授权

US07041224B2 Method for vapor phase etching of silicon 有权
公开(公告)号：US07041224B2
公开(公告)日：2006-05-09
申请号：US10104109
申请日：2002-03-22
申请人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Hongqin Shi , Andrew G. Huibers , Peter Heureux
发明人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Hongqin Shi , Andrew G. Huibers , Peter Heureux
IPC分类号： B81C1/00
CPC分类号： B81C1/00 , B81B2201/045 , B81C1/00476 , B81C1/00531 , B81C1/00595 , B81C99/0025 , B81C2201/0138 , B82Y30/00 , H01L21/3065 , H01L21/3081 , H01L21/32135
摘要： The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant, a noble gas halide or an interhalogen. The sample/workpiece that is etched can be, for example, a semiconductor device or MEMS device, etc. The material that is etched/removed by the vapor phase etchant is preferably silicon and the vapor phase etchant is preferably provided along with one or more diluents. Another feature of the etching system includes the ability to accurately determine the end point of the etch step, such as by creating an impedance at the exit of the etching chamber (or downstream thereof) so that when the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. A first plasma or wet chemical etch (or both) can be performed prior to the vapor phase etch.

4. 发明授权

US07189332B2 Apparatus and method for detecting an endpoint in a vapor phase etch 有权
标题翻译：用于检测气相蚀刻中的端点的装置和方法
公开(公告)号：US07189332B2
公开(公告)日：2007-03-13
申请号：US10269149
申请日：2002-10-11
申请人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald , Hongqin Shi
发明人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald , Hongqin Shi
IPC分类号： C23F3/12
CPC分类号： H01J37/32963 , B81C1/00476 , B81C1/00587 , B81C99/0065 , B81C2201/0132 , B81C2201/0138 , H01J37/32449 , H01J37/32935
摘要： Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.
摘要翻译：通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。

5. 发明授权

US06290864B1 Fluoride gas etching of silicon with improved selectivity 有权
标题翻译：氟化物气体蚀刻硅，提高了选择性
公开(公告)号：US06290864B1
公开(公告)日：2001-09-18
申请号：US09427841
申请日：1999-10-26
申请人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald
发明人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald
IPC分类号： B81C500
CPC分类号： H01L21/32135 , B81C1/00595 , H01L21/3065 , H01L21/3081
摘要： The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by the addition of non-etchant gaseous additives to the etchant gas. An additional discovery is that non-etchant gaseous additives that have a molar averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity.
摘要翻译：通过使用作为惰性气体氟化物或卤素氟化物的蚀刻气体在诸如微机电结构的微结构中蚀刻牺牲硅部分，通过添加非金属氧化物，相对于微观结构的其它部分，对硅部分具有更大的选择性提取气态添加剂到蚀刻剂气体。另外的发现是，具有低于分子氮的摩尔平均配方重量的非蚀刻剂气体添加剂相对于具有较高配方重量的气体添加剂提供了显着的优点，通过在更短的时间内完成蚀刻，同时仍然实现同样的选择性提高。

6. 发明授权

US06949202B1 Apparatus and method for flow of process gas in an ultra-clean environment 有权
标题翻译：在超清洁环境中工艺气体流动的装置和方法
公开(公告)号：US06949202B1
公开(公告)日：2005-09-27
申请号：US09649569
申请日：2000-08-28
申请人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald
发明人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald
IPC分类号： B81B3/00 , C23F1/00 , C23F1/08 , C23F1/12
CPC分类号： C23F1/08 , B81C1/00587 , B81C99/0025 , B81C2201/0138 , B82Y30/00 , H01L21/67017
摘要： Processes for the addition or removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the use of recirculation of the process gas. Recirculation is effected by a pump that has no sliding or abrading parts that contact the process gas, nor any wet (such as oil) seals or purge gas in the pump. Improved processing can be achieved by a process chamber that contains a baffle, a perforated plate, or both, appropriately situated in the chamber to deflect the incoming process gas and distribute it over the workpiece surface. In certain embodiments, a diluent gas is added to the recirculation loop and continuously circulated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop. Also, cooling of the process gas, etching chamber and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample of microscopic dimensions.
摘要翻译：通过使用工艺气体的再循环来增强在制造微结构时通过与工艺气体接触而从工件材料中添加或除去层或区域的工艺。循环由不具有接触工艺气体的滑动或研磨部件的泵以及泵中的任何湿的（例如油）密封件或吹扫气体来实现。改进的处理可以通过包含挡板，多孔板或两者的处理室来实现，该处理室适当地位于室中以偏转进入的工艺气体并将其分布在工件表面上。在某些实施方案中，将稀释气体加入再循环回路并在其中连续循环，随后将工艺气体（例如蚀刻剂气体）渗入再循环回路中。此外，工艺气体，蚀刻室和/或样品台的冷却可以帮助蚀刻工艺。该方法对于从微观尺寸的样品中添加或除去材料特别有用。

7. 发明授权

US06942811B2 Method for achieving improved selectivity in an etching process 有权
标题翻译：在蚀刻过程中实现改进的选择性的方法
公开(公告)号：US06942811B2
公开(公告)日：2005-09-13
申请号：US09954864
申请日：2001-09-17
申请人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Hongqin Shi
发明人： Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Hongqin Shi
IPC分类号： B44C1/22 , B81B3/00 , C03C15/00 , C03C25/68 , C23F1/00 , C23F1/08 , C23F1/12
CPC分类号： B81B3/00 , B81B2201/045 , B81C1/00476 , B81C1/00531 , B81C1/00595 , B81C99/0025 , B81C2201/0138 , B82Y30/00 , H01L21/3065 , H01L21/3081 , H01L21/32135
摘要： The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by slowing the etch rate. The etch rate is preferably 30 um/hr or less, and can be 3 um/hr or even less. The selectivity is also improved by the addition of non-etchant gaseous additives to the etchant gas. Preferably the non-etchant gaseous additives that have a molar-averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity. The etch process is also enhanced by the ability to accurately determine the end point of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. Also, the etch selectivity can be improved by doping the sacrificial material.
摘要翻译：通过使用作为惰性气体氟化物或卤素氟化物的蚀刻剂气体在诸如微机电结构的微结构中蚀刻牺牲硅部分，相对于微结构的其它部分，通过减慢蚀刻速率对硅部分具有更大的选择性。蚀刻速率优选为30um / hr或更小，并且可以为3um / hr或甚至更小。通过向蚀刻剂气体中添加非蚀刻剂气体添加剂也提高了选择性。优选地，具有低于分子氮的摩尔平均配方重量的非蚀刻剂气态添加剂相对于具有较高配方重量的气体添加剂提供了显着的优点，通过在更短的时间段内完成蚀刻，同时仍然实现相同的改进选择性。通过精确确定去除步骤的终点的能力也可以增强蚀刻工艺。气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。此外，通过掺杂牺牲材料可以改善蚀刻选择性。

8. 发明授权

US06939472B2 Etching method in fabrications of microstructures 有权
标题翻译：微观结构的蚀刻方法
公开(公告)号：US06939472B2
公开(公告)日：2005-09-06
申请号：US10665998
申请日：2003-09-17
申请人： Gregory P. Schaadt , Hongqin Shi
发明人： Gregory P. Schaadt , Hongqin Shi
IPC分类号： B01D20060101 , C23F1/00 , G01R31/00 , H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： B81C1/00595 , B81C2201/0132
摘要： The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.
摘要翻译：本发明教导了使用一种或多种选择的自发气相蚀刻剂去除微结构制造中的牺牲材料的方法和装置。所选择的蚀刻剂在进料循环序列的每个进料循环期间被送入包含微结构的蚀刻室，直到微结构的牺牲材料通过蚀刻剂和牺牲材料之间的化学反应排出。具体地，在第一进料循环期间，将第一量的选择的自发气相蚀刻剂送入蚀刻室。在第二进料循环中，将第二量的蚀刻剂送入蚀刻室。所选择的蚀刻剂的第一量和第二量可以相同也可以不相同。进料周期的持续时间可单独调节。

9. 发明授权

US07645704B2 Methods and apparatus of etch process control in fabrications of microstructures 有权
标题翻译：微观结构中蚀刻工艺控制的方法和设备
公开(公告)号：US07645704B2
公开(公告)日：2010-01-12
申请号：US10666671
申请日：2003-09-17
申请人： Hongqin Shi , Gregory P. Schaadt
发明人： Hongqin Shi , Gregory P. Schaadt
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , B81C1/00531 , B81C2201/0109 , C23F1/12 , H01L21/32135 , H01L21/67069 , H01L21/67253
摘要： The present invention provides a method for removing sacrificial materials in fabrications of microstructures using a selected spontaneous vapor phase chemical etchants. During the etching process, an amount of the etchant is fed into an etch chamber for removing the sacrificial material. Additional amount of the etchant are fed into the etch chamber according to a detection of an amount or an amount of an etching product so as to maintaining a substantially constant etching rate of the sacrificial materials inside the etch chamber. Accordingly, an etching system is provided for removing the sacrificial materials based on the disclosed etching method.
摘要翻译：本发明提供一种使用选定的自发气相化学蚀刻剂去除微结构制造中的牺牲材料的方法。在蚀刻过程中，将一定量的蚀刻剂送入用于去除牺牲材料的蚀刻室中。根据蚀刻产物的量或量的检测，将蚀刻剂的额外量进料到蚀刻室中，以保持蚀刻室内的牺牲材料的蚀刻速率基本上恒定。因此，提供了基于所公开的蚀刻方法去除牺牲材料的蚀刻系统。

10. 发明授权

US07655553B2 Microstructure sealing tool and methods of using the same 有权
标题翻译：微结构密封工具及其使用方法
公开(公告)号：US07655553B2
公开(公告)日：2010-02-02
申请号：US11622179
申请日：2007-01-11
申请人： Gregory P. Schaadt
发明人： Gregory P. Schaadt
IPC分类号： H01L21/00 , H01L21/44 , B23K31/00
CPC分类号： B81C1/00269 , B81C2203/0109 , B81C2203/0181 , B81C2203/036 , H01L23/10 , H01L23/345 , H01L2924/0002 , H01L2924/01079 , H01L2924/00
摘要： A method of packing electronic devices and an apparatus thereof are disclosed herein. The method allows for usage of solder materials with a melting temperature of 180° C. or higher, such as from 210° C. to 300° C., and from 230° C. to 260° C., so as to provide reliable and robust packaging. This method is particularly useful for packaging electronic devices that are sensitive to temperatures, such as microstructures, which can be microelectromechanical devices (MEMS), such as micromirror array devices.
摘要翻译：本文公开了一种包装电子设备的方法及其装置。该方法允许使用熔融温度为180℃或更高，例如210℃至300℃，以及230℃至260℃的焊料材料，以提供可靠的和坚固的包装。该方法特别适用于封装对温度敏感的电子器件，例如微结构，其可以是诸如微镜阵列器件的微机电器件（MEMS）。

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