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    • 2. 发明授权
    • Apparatus and method for flow of process gas in an ultra-clean environment
    • 在超清洁环境中工艺气体流动的装置和方法
    • US06949202B1
    • 2005-09-27
    • US09649569
    • 2000-08-28
    • Satyadev R. PatelGregory P. SchaadtDouglas B. MacDonaldNiles K. MacDonald
    • Satyadev R. PatelGregory P. SchaadtDouglas B. MacDonaldNiles K. MacDonald
    • B81B3/00C23F1/00C23F1/08C23F1/12
    • C23F1/08B81C1/00587B81C99/0025B81C2201/0138B82Y30/00H01L21/67017
    • Processes for the addition or removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the use of recirculation of the process gas. Recirculation is effected by a pump that has no sliding or abrading parts that contact the process gas, nor any wet (such as oil) seals or purge gas in the pump. Improved processing can be achieved by a process chamber that contains a baffle, a perforated plate, or both, appropriately situated in the chamber to deflect the incoming process gas and distribute it over the workpiece surface. In certain embodiments, a diluent gas is added to the recirculation loop and continuously circulated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop. Also, cooling of the process gas, etching chamber and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample of microscopic dimensions.
    • 通过使用工艺气体的再循环来增强在制造微结构时通过与工艺气体接触而从工件材料中添加或除去层或区域的工艺。 循环由不具有接触工艺气体的滑动或研磨部件的泵以及泵中的任何湿的(例如油)密封件或吹扫气体来实现。 改进的处理可以通过包含挡板,多孔板或两者的处理室来实现,该处理室适当地位于室中以偏转进入的工艺气体并将其分布在工件表面上。 在某些实施方案中,将稀释气体加入再循环回路并在其中连续循环,随后将工艺气体(例如蚀刻剂气体)渗入再循环回路中。 此外,工艺气体,蚀刻室和/或样品台的冷却可以帮助蚀刻工艺。 该方法对于从微观尺寸的样品中添加或除去材料特别有用。
    • 5. 发明授权
    • Method for achieving improved selectivity in an etching process
    • 在蚀刻过程中实现改进的选择性的方法
    • US06942811B2
    • 2005-09-13
    • US09954864
    • 2001-09-17
    • Satyadev R. PatelGregory P. SchaadtDouglas B. MacDonaldHongqin Shi
    • Satyadev R. PatelGregory P. SchaadtDouglas B. MacDonaldHongqin Shi
    • B44C1/22B81B3/00C03C15/00C03C25/68C23F1/00C23F1/08C23F1/12
    • B81B3/00B81B2201/045B81C1/00476B81C1/00531B81C1/00595B81C99/0025B81C2201/0138B82Y30/00H01L21/3065H01L21/3081H01L21/32135
    • The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by slowing the etch rate. The etch rate is preferably 30 um/hr or less, and can be 3 um/hr or even less. The selectivity is also improved by the addition of non-etchant gaseous additives to the etchant gas. Preferably the non-etchant gaseous additives that have a molar-averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity. The etch process is also enhanced by the ability to accurately determine the end point of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. Also, the etch selectivity can be improved by doping the sacrificial material.
    • 通过使用作为惰性气体氟化物或卤素氟化物的蚀刻剂气体在诸如微机电结构的微结构中蚀刻牺牲硅部分,相对于微结构的其它部分,通过减慢蚀刻速率对硅部分具有更大的选择性 。 蚀刻速率优选为30um / hr或更小,并且可以为3um / hr或甚至更小。 通过向蚀刻剂气体中添加非蚀刻剂气体添加剂也提高了选择性。 优选地,具有低于分子氮的摩尔平均配方重量的非蚀刻剂气态添加剂相对于具有较高配方重量的气体添加剂提供了显着的优点,通过在更短的时间段内完成蚀刻,同时仍然实现相同的改进 选择性。 通过精确确定去除步骤的终点的能力也可以增强蚀刻工艺。 气相蚀刻剂用于去除已经沉积在基底上的材料,其上具有或不具有其它沉积结构。 通过在蚀刻室(或其下游)的出口处产生阻抗,当气相蚀刻剂从蚀刻室通过时,监测蚀刻反应的气态产物,并且可以确定去除过程的终点。 气相蚀刻工艺可以流过,流过和脉冲的组合,或再循环回蚀刻室。 此外,通过掺杂牺牲材料可以改善蚀刻选择性。
    • 6. 发明授权
    • Panel system
    • 面板系统
    • US06684929B2
    • 2004-02-03
    • US10077553
    • 2002-02-15
    • Douglas B. MacDonaldSteven E. SandersMark T. SlagerDean K. HubbardRoy W. FinkSteven J. ThrondsetDavid J. BatteyRobert E. JeffersAllen C. Hager
    • Douglas B. MacDonaldSteven E. SandersMark T. SlagerDean K. HubbardRoy W. FinkSteven J. ThrondsetDavid J. BatteyRobert E. JeffersAllen C. Hager
    • A47G500
    • E04B2/7425E04B2002/7418E04B2002/7446E04B2002/7462E04B2002/7483E04B2002/7487E04B2002/7488E04B2002/749
    • An office panel partition includes a panel frame having at least two uprights and a horizontal structural member rigidly interconnecting the uprights. The panel frame has a first side and a second opposite side, and the panel frame defines at least four apertures on the first side thereof. The partition also includes a cover member having a major planar surface defining an exterior surface of the partition. The cover member includes at least four projections that are removably insertable into the at least four apertures to removably secure the cover member to the frame. The apertures are arranged in at least two vertically spaced horizontal rows and at least two horizontally spaced vertical columns. The apertures in a first one of the columns have different horizontal dimensions than those of the apertures located in the other of the columns. Each of the projections has a range of lateral positions when inserted into a respective one of the apertures. The range of lateral positions provided by the apertures in the first one of the columns is less than the range of lateral positions provided by the apertures in the other row of the columns. The apertures located in a first one of the rows has vertical dimensions that are different than those located in the other of the rows. The range of vertical positions provided by the apertures in the first one of the rows is less than the range of vertical positions provided by the apertures in the other of the rows.
    • 办公室面板隔板包括具有至少两个立柱的面板框架和刚性地互连立柱的水平结构构件。 面板框具有第一侧和第二相对侧,并且面板框在其第一侧上限定至少四个孔。 隔板还包括具有限定隔板的外表面的主平面的盖构件。 盖构件包括至少四个突起,其可移除地插入到至少四个孔中,以将盖构件可移除地固定到框架。 所述孔布置在至少两个垂直间隔开的水平行和至少两个水平间隔开的垂直柱。 第一列中的孔具有与位于另一列中的孔的水平尺寸不同的水平尺寸。 当插入到相应的一个孔中时,每个突起具有一定范围的横向位置。 由第一列中的孔提供的横向位置的范围小于由另一列中的孔提供的横向位置的范围。 位于第一行中的孔具有与位于另一行中的位置不同的垂直尺寸。 由第一行中的孔提供的垂直位置的范围小于由另一行中的孔提供的垂直位置的范围。