专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4922378A Baseboard for orthogonal chip mount 失效
标题翻译：底板用于正交芯片安装
公开(公告)号：US4922378A
公开(公告)日：1990-05-01
申请号：US893770
申请日：1986-08-01
申请人： Satwinder S. Malhi , Kenneth E. Bean
发明人： Satwinder S. Malhi , Kenneth E. Bean
IPC分类号： H01L23/13 , H01L23/14 , H01L23/538 , H01L25/065
CPC分类号： H01L25/0657 , H01L23/13 , H01L23/147 , H01L23/538 , H01L2225/06527 , H01L2225/06551 , H01L2225/06555 , H01L2225/06589 , H01L2924/0002
摘要： A baseboard for orthogonal mounting of integrated circuit chips is described. Plural channels (14) are anisotropically etched in a silicon baseboard (10). A corresponding plurality of integrated circuit chips (12) are inserted into the channels (14). A number of baseboard contact pads (18) are formed adjacent each channel (14), and are solder bonded to corresponding chip conductor pads (16). Interconnect conductors (20, 28) provide connection of each baseboard pad (18) either to other chips (12) or to connector pads (22) located adjacent an edge (26) of the baseboard chip mount (10). A coating (30) of silicon carbide over the surface of the baseboard chip mount (10) improves the thermal efficiency of the assembly.
摘要翻译：描述了用于集成电路芯片的正交安装的基板。在硅基板（10）中各向异性地蚀刻多个通道（14）。相应的多个集成电路芯片（12）插入通道（14）中。在每个通道（14）附近形成有多个基板接触焊盘（18），并焊接到相应的芯片导体焊盘（16）上。互连导体（20,28）提供每个基板焊盘（18）与其它芯片（12）或邻近基板芯片安装架（10）的边缘（26）定位的连接器焊盘（22）的连接。在基板芯片安装件（10）的表面上的碳化硅涂层（30）提高了组件的热效率。

2. 发明授权

US5031072A Baseboard for orthogonal chip mount 失效
标题翻译：底板用于正交芯片安装
公开(公告)号：US5031072A
公开(公告)日：1991-07-09
申请号：US472698
申请日：1990-01-31
申请人： Satwinder S. Malhi , Kenneth E. Bean
发明人： Satwinder S. Malhi , Kenneth E. Bean
IPC分类号： H01L23/13 , H01L23/14 , H01L23/538 , H01L25/065
CPC分类号： H01L23/13 , H01L23/147 , H01L23/538 , H01L25/0657 , H01L2225/06527 , H01L2225/06551 , H01L2225/06555 , H01L2225/06589 , H01L2924/0002
摘要： A baseboard for orthogonal mounting of integrated circuit chips thereto is described. Plural channels (14) are anisotropically etched in a silicon baseboard (10). A corresponding plurality of integrated circuit chips (12) are inserted into the channels (14). A number of baseboard contact pads (18) are formed adjacent each channel (14), and are solder bonded to corresponding chip conductor pads (16). Interconnect conductors (20, 28) provide connection of each baseboard pad (18) either to other chips (12) or to connector pads (22) located adjacent an edge (26) of the baseboard chip mount (10). A coating (30) of silicon carbide over the surface of the baseboard chip mount (10) improves the thermal efficiency of the assembly.
摘要翻译：描述了用于将集成电路芯片正交安装的基板。在硅基板（10）中各向异性地蚀刻多个通道（14）。相应的多个集成电路芯片（12）插入通道（14）中。在每个通道（14）附近形成有多个基板接触焊盘（18），并焊接到相应的芯片导体焊盘（16）上。互连导体（20,28）提供每个基板焊盘（18）与其它芯片（12）或邻近基板芯片安装架（10）的边缘（26）定位的连接器焊盘（22）的连接。在基板芯片安装件（10）的表面上的碳化硅涂层（30）提高了组件的热效率。

3. 发明授权

US5250445A Discretionary gettering of semiconductor circuits 失效
标题翻译：半导体电路的任意吸气
公开(公告)号：US5250445A
公开(公告)日：1993-10-05
申请号：US824770
申请日：1992-01-17
申请人： Kenneth E. Bean , Satwinder S. Malhi , Walter R. Runyan
发明人： Kenneth E. Bean , Satwinder S. Malhi , Walter R. Runyan
IPC分类号： H01L21/322 , H01L21/205
CPC分类号： H01L21/3221
摘要： A semiconductor wafer (32) is patterned to have gettering areas (36-38) selectively positioned proximate devices (44-46) which require gettering. The areas (36-38) comprise germanium-doped silicon having a germanium concentration of approximately 1.5%-2.0%. The germanium creates a lattice mismatch between the substrate (32) and an epitaxial layer (34) which is sufficient to produce defects capable of gettering contaminants. The gettering areas (36-38) may be formed by selective deposition, selective etching, ion-implantation or selective diffusion techniques.
摘要翻译：将半导体晶片（32）图案化成具有选择性地定位在需要吸杂的器件（44-46）附近的吸气区域（36-38）。区域（36-38）包括锗浓度约为1.5％-2.0％的锗掺杂硅。锗在衬底（32）和外延层（34）之间产生足以产生能够吸收污染物的缺陷的晶格失配。吸气区（36-38）可以通过选择性沉积，选择性蚀刻，离子注入或选择性扩散技术形成。

4. 发明授权

US4050979A Process for thinning silicon with special application to producing silicon on insulator 失效
标题翻译：用于减薄硅的工艺，专门用于生产绝缘体上的硅
公开(公告)号：US4050979A
公开(公告)日：1977-09-27
申请号：US649130
申请日：1976-01-14
申请人： Ronald K. Smeltzer , Kenneth E. Bean
发明人： Ronald K. Smeltzer , Kenneth E. Bean
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/30608 , H01L21/76297 , Y10S148/051 , Y10S148/085 , Y10S148/15 , Y10S438/977
摘要： This disclosure relates to methods of producing thin layers of silicon as well as thin layers of silicon on insulating substrates such as silicon dioxide or polycrystalline silicon by forming either an n- layer of single crystal silicon over a p++ layer of single crystal silicon or a p- layer of single crystal silicon over an n++ layer of single crystal silicon and then removing either the n++ or p++ single crystal substrate, as the case may be, by utilizing an etch which will only etch the n++ or p++ region and will stop when the n- or p- region, as the case may be, has been reached.
摘要翻译：本公开涉及通过在p ++层的单晶硅或p上形成单晶硅的n层，在绝缘衬底例如二氧化硅或多晶硅上制造硅薄层以及薄层的硅的方法 - 单层硅单层硅层，然后通过使用仅蚀刻n ++或p ++区域的蚀刻去除n ++或p ++单晶衬底（视情况而定），并且将在根据情况可以达到n-或p-区。

5. 发明授权

US5196378A Method of fabricating an integrated circuit having active regions near a die edge 失效
标题翻译：制造在芯片边缘附近具有有源区的集成电路的方法
公开(公告)号：US5196378A
公开(公告)日：1993-03-23
申请号：US679122
申请日：1991-03-25
申请人： Kenneth E. Bean , John Powell , Jack W. Freeman , Robert D. McGrath
发明人： Kenneth E. Bean , John Powell , Jack W. Freeman , Robert D. McGrath
IPC分类号： H01L21/306 , H01L21/78
CPC分类号： H01L21/78 , H01L21/30608 , Y10S148/028 , Y10S148/168
摘要： The invention relates to a method of scribing and separating dice from each other after fabrication in a semiconductor wafer in a manner such that active circuit regions in the dice reside as near to an edge of a die as possible. The wafer is anistropically etched through the active layer and into the substrate through an opening in the mask to form a generally V-shaped channel with the dice then being separated along a vertex of the channel. The dice are then positioned to abut each other in the form of a mosaic.
摘要翻译：本发明涉及一种在半导体晶片制造之后将骰子彼此划线并分离的方法，使得骰子中的有源电路区域尽可能靠近模具的边缘。晶片通过有源层通过掩模中的开口被人造地蚀刻，并通过掩模中的开口形成大致V形的通道，然后沿着通道的顶点分离晶片。然后将骰子定位成以马赛克的形式彼此邻接。

6. 发明授权

US4663648A Three dimensional structures of active and passive semiconductor components 失效
标题翻译：有源和无源半导体元件的三维结构
公开(公告)号：US4663648A
公开(公告)日：1987-05-05
申请号：US684197
申请日：1984-12-19
申请人： Kenneth E. Bean
发明人： Kenneth E. Bean
IPC分类号： H01L21/822 , H01L27/06 , H01L21/42 , H01L21/461 , H01L29/04
CPC分类号： H01L27/0688 , H01L21/8221
摘要： The disclosure relates to a three dimensional semiconductor structure formed in a semiconductor substrate wherein electrical components, both active and passive, are formed on the substrate surface as well as in grooves formed in the substrate at an angle and extending to the surface. The substrate surface is designed to lie in a predetermined crystallographic plane of the substrate material and the grooves extend in a predetermined crystallographic direction from said plane, this being accomplished by orientation dependent etching.
摘要翻译：本公开涉及形成在半导体衬底中的三维半导体结构，其中有源和无源的电子部件形成在衬底表面上以及形成在衬底中的以一定角度延伸并延伸到表面的凹槽中。衬底表面设计成位于衬底材料的预定结晶平面中，并且沟槽从所述平面以预定的晶体方向延伸，这是通过取向相关的蚀刻来实现的。

7. 发明授权

US3936929A Fet and bipolar device and circuit process with maximum junction control 失效
标题翻译： Fet和双极器件和电路过程具有最大接点控制
公开(公告)号：US3936929A
公开(公告)日：1976-02-10
申请号：US483264
申请日：1974-06-26
申请人： Kenneth E. Bean , William W. Lloyd
发明人： Kenneth E. Bean , William W. Lloyd
IPC分类号： H01L21/762 , H01L21/764 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/00 , B01J17/00
CPC分类号： H01L27/0623 , H01L21/76264 , H01L21/764 , H01L21/8248 , H01L21/8249 , H01L29/00 , H01L21/76289 , Y10S148/051 , Y10S148/053 , Y10S148/085 , Y10S148/102 , Y10S148/145
摘要： Disclosed are improved field-effect and bipolar semiconductor devices and the method of making them, wherein maximum junction control provides highly predictable device parameters. Low temperature epitaxial depositions provide tight junction thickness and resistivity control, and an orientation dependent etch forms grooves circumscribing portions of the host substrate and overlying epitaxial layers to provide dielectrically isolated single crystalline mesas utilized in forming electronic devices.This is a division of application Ser. No. 275,116, filed July 26, 1972.
摘要翻译：公开了改进的场效应和双极半导体器件及其制造方法，其中最大接点控制提供高度可预测的器件参数。低温外延沉积提供紧密的结厚度和电阻率控制，并且取向依赖的蚀刻形成限定主体衬底和上覆外延层的部分的凹槽，以提供用于形成电子器件的介电隔离的单晶台面。

8. 发明授权

US5089428A Method for forming a germanium layer and a heterojunction bipolar transistor 失效
标题翻译：形成锗层和异相双极晶体管的方法
公开(公告)号：US5089428A
公开(公告)日：1992-02-18
申请号：US457673
申请日：1989-12-27
申请人： Douglas P. Verret , Kenneth E. Bean
发明人： Douglas P. Verret , Kenneth E. Bean
IPC分类号： H01L21/20 , H01L21/316 , H01L21/331 , H01L29/737
CPC分类号： H01L29/7378 , H01L21/02164 , H01L21/02236 , H01L21/02255 , H01L21/31662 , H01L29/66242 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02664 , Y10S148/011 , Y10S148/059
摘要： A method for preparing a germanium layer (22) adjacent to a germanium silicon layer (20). Initially, a P-germanium silicon layer (16) is deposited on to an N-germanium silicon layer (14). The continuous germanium layer (22) is formed by heating the layers (14 and 16) in a steam oxidation step to approximately 1000 degrees Centigrade to transform the P-germanium silicon layer (16) into the P-germanium layer (18) and a SiO.sub.2 layer (22). A method for forming a heterojunction bipolar transistor utilizing a P-germanium layer (50) is also disclosed.

9. 发明授权

US3969749A Substrate for dielectric isolated integrated circuit with V-etched depth grooves for lapping guide 失效
标题翻译：用于绝缘隔离集成电路的衬底，具有用于研磨导轨的V蚀刻深度槽
公开(公告)号：US3969749A
公开(公告)日：1976-07-13
申请号：US578451
申请日：1975-05-19
申请人： Kenneth E. Bean
发明人： Kenneth E. Bean
IPC分类号： H01L21/306 , H01L21/762 , H01L27/04 , H01L27/12
CPC分类号： H01L21/76297 , H01L21/30608
摘要： Process permitting control of the thickness of the thin layer of semiconductor material by first forming a slot of a predetermined depth in one surface so that the slot will be exposed during removal of material from the opposite surface should the thickness of the thin layer of semiconductor material become less than the depth of the slot, and a (110) oriented semiconductor substrate having a slot formed therein which is bounded by converging {111} planes.In a preferred embodiment the thickness control is realized by first preparing the slice of semiconductor material so that at least one of its surfaces has a (100) orientation. There is then formed on the surface of the slice having the (100) orientation an etch-resistant mask having a window opened therethrough such that the window defines on the surface of the slice two lines which are parallel to each other and to lines defined by the intersection of {111} planes with the surface of the slice. Semiconductor material is then removed through the windows by etching to produce a slot having a depth greater than thickness to which the single crystal semiconductor material is to be subsequently processed. A vapor deposited support layer may then be produced on the surface of the slice to which the mask was attached during which process it will fill the slot etched in the semiconductor material through the window. Upon removal of the semiconductor material from the opposite surface of the slice, which may be affected by lapping and polishing, the support layer formed in the slot will become exposed, thus indicating that the thickness of the semiconductor material remaining is equal to or less than the depth of the slot etched in the first surface of the semiconductor material. At the time the first depth control slot is formed in the first surface of the semiconductor slice, there may also be performed a plurality of similar slots, the depth of which are controlled by controlling the width of the window in the etch resistant mask. Thus, as semiconductor material is removed from the slice, the thickness of the material remaining after the removal process can be determined by the number of slots exposed during lapping and polishing.
摘要翻译：工艺允许通过首先在一个表面上形成预定深度的槽来控制半导体材料薄层的厚度，使得如果半导体材料薄层的厚度应该从相对表面去除材料期间露出槽变得小于槽的深度，并且其中形成有槽的（110）取向的半导体衬底由{111}平面收敛而界定。

10. 发明授权

US4982263A Anodizable strain layer for SOI semiconductor structures 失效
标题翻译：用于SOI半导体结构的可阳极氧化应变层
公开(公告)号：US4982263A
公开(公告)日：1991-01-01
申请号：US321612
申请日：1989-03-10
申请人： David B. Spratt , Eldon J. Zorinsky , Robert L. Virkus , Kenneth E. Bean , Richard L. Yeakley
发明人： David B. Spratt , Eldon J. Zorinsky , Robert L. Virkus , Kenneth E. Bean , Richard L. Yeakley
IPC分类号： H01L21/20 , H01L21/762
CPC分类号： H01L21/76264 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/7627 , H01L21/76283 , Y10S438/938 , Y10S438/96
摘要： A silicon on insulator semiconductor structure employs a strain layer fabricated of an electrically inactive material. The strain layer comprises silicon with a germanium additive to produce a sublayer exhibiting a low breakdown voltage and thus effective for selective anodization.
摘要翻译：绝缘体上硅半导体结构采用由电惰性材料制成的应变层。应变层包括具有锗添加剂的硅以产生显示低击穿电压的子层，因此对于选择性阳极氧化是有效的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式