专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07244628B2 Method for fabricating semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07244628B2
公开(公告)日：2007-07-17
申请号：US10849823
申请日：2004-05-21
申请人： Satoshi Tamura , Tetsuzo Ueda
发明人： Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/2007
摘要： A method for fabricating semiconductor devices forms a semiconductor layer containing a positive layer on a mother substrate and then forms a metal layer on the semiconductor layer. After forming the metal layer, the method separates the mother substrate from the semiconductor layer and then removes a desired region of the metal layer from the exposed surface of the semiconductor layer from which the mother substrate has been separated to form a plurality of mutually separated semiconductor devices each containing the semiconductor layer.
摘要翻译：制造半导体器件的方法在母体衬底上形成含有正层的半导体层，然后在半导体层上形成金属层。在形成金属层之后，该方法将母基板与半导体层分离，然后从半导体层的暴露表面除去母材基板已被分离的所需金属层区域，以形成多个相互分离的半导体每个包含半导体层的器件。

2. 发明授权

US07148149B2 Method for fabricating nitride-based compound semiconductor element 有权
标题翻译：氮化物系化合物半导体元件的制造方法
公开(公告)号：US07148149B2
公开(公告)日：2006-12-12
申请号：US11017681
申请日：2004-12-22
申请人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
发明人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/3081 , H01L21/30612 , H01L21/30621 , H01L21/30635 , H01L33/0075
摘要： A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11; forming, on part of the upper surface of the nitride semiconductor layer 13, a conductive film 14 made of an electron emitting layer 14b and a dry etching mask layer 14a from bottom to top; performing dry etching on the nitride semiconductor layer 13; and performing wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 through the conductive film 14 to the outside.
摘要翻译：根据本发明的制造氮化物半导体元件的方法包括以下步骤：在基底基板11上形成氮化物半导体层13; 在氮化物半导体层13的上表面的一部分上形成从底部到顶部由电子发射层14b和干蚀刻掩模层14a形成的导电膜14; 在氮化物半导体层13上进行干蚀刻; 以及通过从氮化物半导体层13通过导电膜14向外部发射电子而在氮化物半导体层13上进行湿式蚀刻。

3. 发明申请

US20050159000A1 Method for fabricating nitride-based compound semiconductor element 有权
标题翻译：氮化物系化合物半导体元件的制造方法
公开(公告)号：US20050159000A1
公开(公告)日：2005-07-21
申请号：US11017681
申请日：2004-12-22
申请人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
发明人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L21/306 , H01L21/3063 , H01L21/3065 , H01L21/308 , H01L33/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3081 , H01L21/30612 , H01L21/30621 , H01L21/30635 , H01L33/0075
摘要： A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11; forming, on part of the upper surface of the nitride semiconductor layer 13, a conductive film 14 made of an electron emitting layer 14b and a dry etching mask layer 14a from bottom to top; performing dry etching on the nitride semiconductor layer 13; and performing wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 through the conductive film 14 to the outside.
摘要翻译：根据本发明的制造氮化物半导体元件的方法包括以下步骤：在基底基板11上形成氮化物半导体层13; 在氮化物半导体层13的上表面的一部分上形成从底部到顶部由电子发射层14b和干蚀刻掩模层14a形成的导电膜14; 在氮化物半导体层13上进行干蚀刻; 以及通过从氮化物半导体层13通过导电膜14向外部发射电子而在氮化物半导体层13上进行湿式蚀刻。

4. 发明授权

US07173277B2 Semiconductor light emitting device and method for fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07173277B2
公开(公告)日：2007-02-06
申请号：US10717557
申请日：2003-11-21
申请人： Satoshi Tamura , Tetsuzo Ueda
发明人： Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L29/04 , H01L29/24 , H01L27/15
CPC分类号： H01L33/42 , H01L33/32
摘要： A semiconductor light emitting device includes a semiconductor multilayer structure comprising a plurality of Group III–V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a transparent electrode formed on the semiconductor multilayer structure. The transparent electrode contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor in the semiconductor multilayer structure, which semiconductor has an interface with the transparent electrode. Therefore, contact resistance between the transparent electrode and the semiconductor having the interface with the transparent electrode is decreased.
摘要翻译：半导体发光器件包括包括多个III-V族氮化物半导体层的半导体多层结构，所述III-V族氮化物半导体层包括不同导电类型的两个半导体层，以及形成在半导体多层结构上的透明电极。透明电极含有与半导体层叠结构中的半导体中引入的杂质元素的导电类型相同的杂质元素，该半导体与透明电极具有界面。因此，透明电极与具有与透明电极的界面的半导体之间的接触电阻降低。

5. 发明授权

US09449761B2 Polypropylene for film capacitor, polypropylene sheet for film capacitor, method for producing the same, and uses of the same 有权
标题翻译：薄膜电容用聚丙烯，薄膜电容用聚丙烯片及其制造方法及其用途
公开(公告)号：US09449761B2
公开(公告)日：2016-09-20
申请号：US13256622
申请日：2010-03-17
申请人： Noriko Tan , Satoshi Tamura
发明人： Noriko Tan , Satoshi Tamura
IPC分类号： H01G4/18 , C08J3/28 , C08L23/12
CPC分类号： H01G4/18 , C08L23/12 , C08L2312/00 , C08L2312/06 , Y02T10/7022
摘要： A polypropylene for a film capacitor or a polypropylene sheet for a film capacitor which exhibits excellent stretchability when stretched into a film and provides a film having high breakdown voltage and small thermal shrinkage ratio, and which is suitable for a polypropylene film for a film capacitor and a film capacitor comprising the film.The polypropylene for a film capacitor of the present invention is obtained by irradiating a propylene homopolymer with a radiation with an absorbed dose of 0.1 to 500 kGy, the propylene homopolymer having (1) a melt flow rate (MFR) within a range of 1 to 10 g/10 min as determined at 230° C. under a load of 2.16 kg in accordance with ASTM D1238, (2) an isotactic pentad fraction (mmmm fraction) of not less than 94% as determined using 13C-NMR, (3) an ash amount of not more than 30 ppm as obtained by completely burning the propylene homopolymer in air, and (4) a chlorine amount of not more than 10 ppm as determined by ion chromatography.
摘要翻译：本发明的薄膜电容器用聚丙烯通过用吸收剂量为0.1〜500kGy的辐射照射丙烯均聚物，所述丙烯均聚物的熔融流动速率（MFR）为1〜（2）使用13 C-NMR测定的等于或小于94％的全同立构五单元组分数（mmmm分数），（3），（3）所示，在230℃，2.16kg负荷下，）通过在空气中完全燃烧丙烯均聚物得到的灰分量不大于30ppm，（4）通过离子色谱测定的氯量不大于10ppm。

6. 发明申请

US20130007496A1 INFORMATION PROCESSING APPARATUS AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：信息处理装置及其控制方法
公开(公告)号：US20130007496A1
公开(公告)日：2013-01-03
申请号：US13419145
申请日：2012-03-13
申请人： Satoshi Tamura
发明人： Satoshi Tamura
IPC分类号： G06F1/32
CPC分类号： G06F1/1677 , G06F1/3206 , G06F1/3234 , Y02D50/20
摘要： According to one embodiment, a method controls an apparatus including a sensor which detects an open/close state of a cover, and an power manager which performs power management of the apparatus in accordance with a ordinary state and a power-saving state. The method includes notifying turning on the apparatus in order to change the apparatus to the ordinary state, if the power manager is notified a second notifying and the sensor detects that the cover is opened, and performing an power management corresponding to the power-saving state, if the power manager is notified a first notifying, or if the power manager is notified the second notifying and the sensor detects that the cover is closed.
摘要翻译：根据一个实施例，一种方法控制包括检测盖的打开/关闭状态的传感器和根据普通状态和省电状态进行设备的电力管理的功率管理器的设备。该方法包括通知打开设备以便将设备改变到普通状态，如果电源管理器被通知第二个通知，并且传感器检测到盖被打开，并执行与省电状态相对应的电源管理如果电源管理器被通知第一次通知，或者电源管理器被通知第二个通知，并且传感器检测到盖被关闭。

7. 发明申请

US20110268144A1 NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：氮化物半导体激光器件
公开(公告)号：US20110268144A1
公开(公告)日：2011-11-03
申请号：US12681981
申请日：2009-10-21
申请人： Kazutoshi Onozawa , Satoshi Tamura , Hideki Kasugai
发明人： Kazutoshi Onozawa , Satoshi Tamura , Hideki Kasugai
IPC分类号： H01S5/323 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0658 , H01S5/2009 , H01S5/2081 , H01S5/2206 , H01S5/3063
摘要： A nitride semiconductor laser device includes an active layer 106 made of a nitride semiconductor formed on a substrate and a current confining layer 109 formed above the active layer 106. The current confining layer has an opening 109a through which a current selectively flows into the active layer 106. The device satisfies 0.044
摘要翻译：氮化物半导体激光器件包括由形成在衬底上的氮化物半导体制成的有源层106和形成在有源层106上方的电流限制层109.电流限制层具有开口109a，电流选择性地流入有源层该装置满足0.044 <＆Dgr; n /＆Ggr; v <0.062其中＆Dgr; n是开口109a和电流限制层109之间的有效折射率差，＆Ggr; v是作为垂直光限制因子的比例限定在有源层106中的激光照射到在有源层106中发射的激光。

8. 发明申请

US20070144225A1 Electronic device system and lock device 审中-公开
标题翻译：电子设备系统和锁定装置
公开(公告)号：US20070144225A1
公开(公告)日：2007-06-28
申请号：US11643278
申请日：2006-12-21
申请人： Satoshi Tamura
发明人： Satoshi Tamura
IPC分类号： E05B73/00
CPC分类号： E05B73/0082 , E05B47/0012 , E05B47/023 , E05B73/0005 , G06F21/88 , Y10T70/5009
摘要： According to one embodiment, an electronic device system includes a lock device including a hook portion which is rotatable between a lock position and an unlock position, and a rotation permission unit which permits rotation of the hook portion in a case where a permission signal is received, and an electronic device including a casing with a wall, a connection port which opens at the wall of the casing and to which the hook portion of the lock device is insertable, a detection unit which detects whether the lock device is inserted in the connection port, and a supply unit which supplies the permission signal to the rotation permission unit of the lock device in a case where the lock device is inserted in the connection port.
摘要翻译：根据一个实施例，电子设备系统包括锁定装置，该锁定装置包括可在锁定位置和解锁位置之间旋转的钩部，以及允许在允许信号被接收的情况下允许钩部旋转的旋转允许单元以及包括具有壁的壳体的电子设备，在壳体的壁处开口并且可插入锁定装置的钩部的连接口，检测单元，其检测锁定装置是否插入在连接中端口和供应单元，其在锁定装置插入连接端口的情况下将许可信号提供给锁定装置的旋转允许单元。

9. 发明授权

US06545072B2 Polypropylene resin composition, and film and sheet using the same 失效
标题翻译：聚丙烯树脂组合物，以及使用其的薄膜和片材
公开(公告)号：US06545072B2
公开(公告)日：2003-04-08
申请号：US09895314
申请日：2001-07-02
申请人： Satoshi Tamura , Yutaka Azuma
发明人： Satoshi Tamura , Yutaka Azuma
IPC分类号： C08K515
CPC分类号： C08J5/18 , C08J2323/12 , C08K5/005 , C08L23/10
摘要： Disclosed is a film or sheet of a polypropylene resin composition comprising the following components (A), (B) and (C): (A) 100 parts by weight of a polypropylene resin, (B) from 0.001 to 1 part by weight of a phenolic antioxidant such as 1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)isocyanurate or the like, and (C) from 0.05 to 5 parts by weight of a hindered amine-based light stabilizer. Provided are filmy or sheet moldings of the polypropylene resin composition which color little even when stored indoors at relatively high temperatures; and also the polypropylene resin composition for the moldings.
摘要翻译：公开了一种聚丙烯树脂组合物的薄膜或片材，其包含以下组分（A），（B）和（C）:( A）100重量份的聚丙烯树脂，（B）0.001至1重量份的酚类抗氧化剂如1,3,5-三（4-叔丁基-3-羟基-2,6-二甲基苄基）异氰脲酸酯等，（C）0.05-5重量份的受阻胺 - 提供聚丙烯树脂组合物的薄膜或片状模制品，即使在相对高的温度下室内存放时颜色很小; 以及用于模制品的聚丙烯树脂组合物。

10. 发明授权

US09009507B2 Information processing apparatus and method of controlling the same 有权
标题翻译：信息处理装置及其控制方法
公开(公告)号：US09009507B2
公开(公告)日：2015-04-14
申请号：US13419145
申请日：2012-03-13
申请人： Satoshi Tamura
发明人： Satoshi Tamura
IPC分类号： G06F1/32 , G06F1/16
CPC分类号： G06F1/1677 , G06F1/3206 , G06F1/3234 , Y02D50/20
摘要： According to one embodiment, a method controls an apparatus including a sensor which detects an open/close state of a cover, and an power manager which performs power management of the apparatus in accordance with a ordinary state and a power-saving state. The method includes notifying turning on the apparatus in order to change the apparatus to the ordinary state, if the power manager is notified a second notifying and the sensor detects that the cover is opened, and performing an power management corresponding to the power-saving state, if the power manager is notified a first notifying, or if the power manager is notified the second notifying and the sensor detects that the cover is closed.
摘要翻译：根据一个实施例，一种方法控制包括检测盖的打开/关闭状态的传感器和根据普通状态和省电状态进行设备的电力管理的功率管理器的设备。该方法包括通知打开设备以便将设备改变到普通状态，如果电源管理器被通知第二个通知，并且传感器检测到盖被打开，并执行与省电状态相对应的电源管理如果电源管理器被通知第一次通知，或者电源管理器被通知第二个通知，并且传感器检测到盖被关闭。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式