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1. 发明授权

US09449761B2 Polypropylene for film capacitor, polypropylene sheet for film capacitor, method for producing the same, and uses of the same 有权
标题翻译：薄膜电容用聚丙烯，薄膜电容用聚丙烯片及其制造方法及其用途
公开(公告)号：US09449761B2
公开(公告)日：2016-09-20
申请号：US13256622
申请日：2010-03-17
申请人： Noriko Tan , Satoshi Tamura
发明人： Noriko Tan , Satoshi Tamura
IPC分类号： H01G4/18 , C08J3/28 , C08L23/12
CPC分类号： H01G4/18 , C08L23/12 , C08L2312/00 , C08L2312/06 , Y02T10/7022
摘要： A polypropylene for a film capacitor or a polypropylene sheet for a film capacitor which exhibits excellent stretchability when stretched into a film and provides a film having high breakdown voltage and small thermal shrinkage ratio, and which is suitable for a polypropylene film for a film capacitor and a film capacitor comprising the film.The polypropylene for a film capacitor of the present invention is obtained by irradiating a propylene homopolymer with a radiation with an absorbed dose of 0.1 to 500 kGy, the propylene homopolymer having (1) a melt flow rate (MFR) within a range of 1 to 10 g/10 min as determined at 230° C. under a load of 2.16 kg in accordance with ASTM D1238, (2) an isotactic pentad fraction (mmmm fraction) of not less than 94% as determined using 13C-NMR, (3) an ash amount of not more than 30 ppm as obtained by completely burning the propylene homopolymer in air, and (4) a chlorine amount of not more than 10 ppm as determined by ion chromatography.
摘要翻译：本发明的薄膜电容器用聚丙烯通过用吸收剂量为0.1〜500kGy的辐射照射丙烯均聚物，所述丙烯均聚物的熔融流动速率（MFR）为1〜（2）使用13 C-NMR测定的等于或小于94％的全同立构五单元组分数（mmmm分数），（3），（3）所示，在230℃，2.16kg负荷下，）通过在空气中完全燃烧丙烯均聚物得到的灰分量不大于30ppm，（4）通过离子色谱测定的氯量不大于10ppm。

2. 发明申请

US20130007496A1 INFORMATION PROCESSING APPARATUS AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：信息处理装置及其控制方法
公开(公告)号：US20130007496A1
公开(公告)日：2013-01-03
申请号：US13419145
申请日：2012-03-13
申请人： Satoshi Tamura
发明人： Satoshi Tamura
IPC分类号： G06F1/32
CPC分类号： G06F1/1677 , G06F1/3206 , G06F1/3234 , Y02D50/20
摘要： According to one embodiment, a method controls an apparatus including a sensor which detects an open/close state of a cover, and an power manager which performs power management of the apparatus in accordance with a ordinary state and a power-saving state. The method includes notifying turning on the apparatus in order to change the apparatus to the ordinary state, if the power manager is notified a second notifying and the sensor detects that the cover is opened, and performing an power management corresponding to the power-saving state, if the power manager is notified a first notifying, or if the power manager is notified the second notifying and the sensor detects that the cover is closed.
摘要翻译：根据一个实施例，一种方法控制包括检测盖的打开/关闭状态的传感器和根据普通状态和省电状态进行设备的电力管理的功率管理器的设备。该方法包括通知打开设备以便将设备改变到普通状态，如果电源管理器被通知第二个通知，并且传感器检测到盖被打开，并执行与省电状态相对应的电源管理如果电源管理器被通知第一次通知，或者电源管理器被通知第二个通知，并且传感器检测到盖被关闭。

3. 发明申请

US20110268144A1 NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：氮化物半导体激光器件
公开(公告)号：US20110268144A1
公开(公告)日：2011-11-03
申请号：US12681981
申请日：2009-10-21
申请人： Kazutoshi Onozawa , Satoshi Tamura , Hideki Kasugai
发明人： Kazutoshi Onozawa , Satoshi Tamura , Hideki Kasugai
IPC分类号： H01S5/323 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0658 , H01S5/2009 , H01S5/2081 , H01S5/2206 , H01S5/3063
摘要： A nitride semiconductor laser device includes an active layer 106 made of a nitride semiconductor formed on a substrate and a current confining layer 109 formed above the active layer 106. The current confining layer has an opening 109a through which a current selectively flows into the active layer 106. The device satisfies 0.044
摘要翻译：氮化物半导体激光器件包括由形成在衬底上的氮化物半导体制成的有源层106和形成在有源层106上方的电流限制层109.电流限制层具有开口109a，电流选择性地流入有源层该装置满足0.044 <＆Dgr; n /＆Ggr; v <0.062其中＆Dgr; n是开口109a和电流限制层109之间的有效折射率差，＆Ggr; v是作为垂直光限制因子的比例限定在有源层106中的激光照射到在有源层106中发射的激光。

4. 发明授权

US07244628B2 Method for fabricating semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07244628B2
公开(公告)日：2007-07-17
申请号：US10849823
申请日：2004-05-21
申请人： Satoshi Tamura , Tetsuzo Ueda
发明人： Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/2007
摘要： A method for fabricating semiconductor devices forms a semiconductor layer containing a positive layer on a mother substrate and then forms a metal layer on the semiconductor layer. After forming the metal layer, the method separates the mother substrate from the semiconductor layer and then removes a desired region of the metal layer from the exposed surface of the semiconductor layer from which the mother substrate has been separated to form a plurality of mutually separated semiconductor devices each containing the semiconductor layer.
摘要翻译：制造半导体器件的方法在母体衬底上形成含有正层的半导体层，然后在半导体层上形成金属层。在形成金属层之后，该方法将母基板与半导体层分离，然后从半导体层的暴露表面除去母材基板已被分离的所需金属层区域，以形成多个相互分离的半导体每个包含半导体层的器件。

5. 发明申请

US20070144225A1 Electronic device system and lock device 审中-公开
标题翻译：电子设备系统和锁定装置
公开(公告)号：US20070144225A1
公开(公告)日：2007-06-28
申请号：US11643278
申请日：2006-12-21
申请人： Satoshi Tamura
发明人： Satoshi Tamura
IPC分类号： E05B73/00
CPC分类号： E05B73/0082 , E05B47/0012 , E05B47/023 , E05B73/0005 , G06F21/88 , Y10T70/5009
摘要： According to one embodiment, an electronic device system includes a lock device including a hook portion which is rotatable between a lock position and an unlock position, and a rotation permission unit which permits rotation of the hook portion in a case where a permission signal is received, and an electronic device including a casing with a wall, a connection port which opens at the wall of the casing and to which the hook portion of the lock device is insertable, a detection unit which detects whether the lock device is inserted in the connection port, and a supply unit which supplies the permission signal to the rotation permission unit of the lock device in a case where the lock device is inserted in the connection port.
摘要翻译：根据一个实施例，电子设备系统包括锁定装置，该锁定装置包括可在锁定位置和解锁位置之间旋转的钩部，以及允许在允许信号被接收的情况下允许钩部旋转的旋转允许单元以及包括具有壁的壳体的电子设备，在壳体的壁处开口并且可插入锁定装置的钩部的连接口，检测单元，其检测锁定装置是否插入在连接中端口和供应单元，其在锁定装置插入连接端口的情况下将许可信号提供给锁定装置的旋转允许单元。

6. 发明授权

US06545072B2 Polypropylene resin composition, and film and sheet using the same 失效
标题翻译：聚丙烯树脂组合物，以及使用其的薄膜和片材
公开(公告)号：US06545072B2
公开(公告)日：2003-04-08
申请号：US09895314
申请日：2001-07-02
申请人： Satoshi Tamura , Yutaka Azuma
发明人： Satoshi Tamura , Yutaka Azuma
IPC分类号： C08K515
CPC分类号： C08J5/18 , C08J2323/12 , C08K5/005 , C08L23/10
摘要： Disclosed is a film or sheet of a polypropylene resin composition comprising the following components (A), (B) and (C): (A) 100 parts by weight of a polypropylene resin, (B) from 0.001 to 1 part by weight of a phenolic antioxidant such as 1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)isocyanurate or the like, and (C) from 0.05 to 5 parts by weight of a hindered amine-based light stabilizer. Provided are filmy or sheet moldings of the polypropylene resin composition which color little even when stored indoors at relatively high temperatures; and also the polypropylene resin composition for the moldings.
摘要翻译：公开了一种聚丙烯树脂组合物的薄膜或片材，其包含以下组分（A），（B）和（C）:( A）100重量份的聚丙烯树脂，（B）0.001至1重量份的酚类抗氧化剂如1,3,5-三（4-叔丁基-3-羟基-2,6-二甲基苄基）异氰脲酸酯等，（C）0.05-5重量份的受阻胺 - 提供聚丙烯树脂组合物的薄膜或片状模制品，即使在相对高的温度下室内存放时颜色很小; 以及用于模制品的聚丙烯树脂组合物。

7. 发明授权

US09009507B2 Information processing apparatus and method of controlling the same 有权
标题翻译：信息处理装置及其控制方法
公开(公告)号：US09009507B2
公开(公告)日：2015-04-14
申请号：US13419145
申请日：2012-03-13
申请人： Satoshi Tamura
发明人： Satoshi Tamura
IPC分类号： G06F1/32 , G06F1/16
CPC分类号： G06F1/1677 , G06F1/3206 , G06F1/3234 , Y02D50/20
摘要： According to one embodiment, a method controls an apparatus including a sensor which detects an open/close state of a cover, and an power manager which performs power management of the apparatus in accordance with a ordinary state and a power-saving state. The method includes notifying turning on the apparatus in order to change the apparatus to the ordinary state, if the power manager is notified a second notifying and the sensor detects that the cover is opened, and performing an power management corresponding to the power-saving state, if the power manager is notified a first notifying, or if the power manager is notified the second notifying and the sensor detects that the cover is closed.
摘要翻译：根据一个实施例，一种方法控制包括检测盖的打开/关闭状态的传感器和根据普通状态和省电状态进行设备的电力管理的功率管理器的设备。该方法包括通知打开设备以便将设备改变到普通状态，如果电源管理器被通知第二个通知，并且传感器检测到盖被打开，并执行与省电状态相对应的电源管理如果电源管理器被通知第一次通知，或者电源管理器被通知第二个通知，并且传感器检测到盖被关闭。

8. 发明申请

US20120303943A1 INFORMATION PROCESSING APPARATUS AND AUTHENTICATION CONTROL METHOD 审中-公开
标题翻译：信息处理设备和认证控制方法
公开(公告)号：US20120303943A1
公开(公告)日：2012-11-29
申请号：US13398628
申请日：2012-02-16
申请人： Satoshi Tamura , Toru Hanada , Isamu Uchiyama , Gen Watanabe
发明人： Satoshi Tamura , Toru Hanada , Isamu Uchiyama , Gen Watanabe
IPC分类号： G06F21/00
CPC分类号： G06F21/44 , G06F21/6218
摘要： According to one embodiment, a control module determines whether a second authentication key is present in a authentication key storage device when an information processing apparatus is powered on. The control module displays an identification code input screen for inputting an identification code if the second authentication key is not present, causes a storage device to execute an identification code authentication process of determining whether the identification code which is input to the identification code input screen agrees with the first identification code, and generates a third authentication key and stores the third authentication key in the authentication key storage device if the identification code authentication process is successfully carried out.
摘要翻译：根据一个实施例，当信息处理设备通电时，控制模块确定认证密钥存储设备中是否存在第二认证密钥。如果不存在第二认证密钥，则控制模块显示用于输入识别码的识别码输入画面，使存储装置执行识别码认证处理，以确定输入到识别码输入画面的识别码是否一致并且如果成功地执行了识别码认证处理，则生成第三认证密钥并将第三认证密钥存储在认证密钥存储装置中。

9. 发明授权

US08288495B2 Propylene homopolymer for capacitors 有权
标题翻译：用于电容器的丙烯均聚物
公开(公告)号：US08288495B2
公开(公告)日：2012-10-16
申请号：US13146378
申请日：2010-01-26
申请人： Satoshi Tamura , Keita Itakura , Satoshi Hashizume
发明人： Satoshi Tamura , Keita Itakura , Satoshi Hashizume
IPC分类号： C08F110/06 , C08F4/642
CPC分类号： H01B3/441 , C08F110/06 , C08F2500/12 , C08F2500/15 , C08F2500/20 , C08F2500/26
摘要： [Object] To provide a propylene homopolymer suitable for capacitor films having high withstand voltage and a stretched film formed by stretching the propylene homopolymer.[Solution] A propylene homopolymer of the present invention for capacitors satisfies the following requirements (i) to (v) and (ix): (i) the MFR is 1 to 10 g/10 minutes; (ii) the meso pentad fraction (mmmm) measured by 13C-NMR is 0.940 to 0.995; (iii) the integrted amount of elution at 90° C. by CFC using o-dichlorobenzene is 0.5% by weight or less; (iv) the melting point measured using DSC is 152° C. or more; (v) the chlorine content is 2 ppm by weight or less; and (ix) in an elution temperature-elution volume curve measured by cross-fractionation chromatography (CFC) using o-dichlorobenzene, the maximum peak has a peak top temperature in the range of 105° C. to 130° C. and half width of 7.0° C. or less.
摘要翻译：本发明提供适用于具有高耐压性的电容器膜的丙烯均聚物和通过拉伸丙烯均聚物形成的拉伸膜。 [溶液]本发明的电容器用丙烯均聚物满足以下要求（i）〜（v）和（ix）：（i）MFR为1〜10g / 10分钟; （ii）通过13 C-NMR测量的内消旋五单元组分数（mmmm）为0.940〜0.995; （iii）通过CFC使用邻二氯苯在90℃下洗脱的积分量为0.5重量％以下; （iv）使用DSC测定的熔点为152℃以上; （v）氯含量为2重量ppm以下; 和（ix）在通过使用邻二氯苯的交叉分级分离色谱（CFC）测量的洗脱温度 - 洗脱体积曲线中，最大峰的峰顶温度在105℃至130℃的范围内，半宽度为7.0℃以下。

10. 发明授权

US08253220B2 Nitride semiconductor device and method for fabricating the same 失效
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US08253220B2
公开(公告)日：2012-08-28
申请号：US13180134
申请日：2011-07-11
申请人： Ryo Kajitani , Satoshi Tamura , Hideki Kasugai
发明人： Ryo Kajitani , Satoshi Tamura , Hideki Kasugai
IPC分类号： H01L29/207 , H01L21/20
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/1066 , H01L29/2003 , H01L29/32 , H01L29/365 , H01L29/41766 , H01L29/42316 , H01L29/66462 , H01S5/2081 , H01S5/2202 , H01S5/3054 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor device includes a first nitride semiconductor layer formed on a substrate, a defect induced layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the defect induced layer, contacting the defect induced layer, and having an opening through which the defect induced layer is exposed. The defect induced layer has a higher crystal defect density than those of the first and second nitride semiconductor layers.
摘要翻译：氮化物半导体器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的缺陷感应层和形成在缺陷感应层上的第二氮化物半导体层，与缺陷感应层接触，并且具有开口缺陷诱导层暴露于其中。缺陷感应层比第一和第二氮化物半导体层具有更高的晶体缺陷密度。

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