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1. 发明授权

US09196484B2 Silicon-containing composition for formation of resist underlayer film, which contains organic group containing protected aliphatic alcohol 有权
标题翻译：用于形成抗蚀剂下层膜的含硅组合物，其含有含有保护的脂族醇的有机基团
公开(公告)号：US09196484B2
公开(公告)日：2015-11-24
申请号：US13825158
申请日：2011-09-14
申请人： Satoshi Takeda , Makoto Nakajima , Yuta Kanno
发明人： Satoshi Takeda , Makoto Nakajima , Yuta Kanno
IPC分类号： H01L21/311 , H01L21/033 , G03F7/075 , G03F7/09 , C09D183/04 , C08G77/14 , C08G77/16
CPC分类号： H01L21/0332 , C08G77/14 , C08G77/16 , C09D183/04 , G03F7/0752 , G03F7/091 , G03F7/094
摘要： Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.
摘要翻译：本文描述了用于形成用于溶剂可显影抗蚀剂的下层膜的组合物。这些组合物可以包括具有与含有保护的脂族醇基的有机基团键合的硅原子的水解性有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物，或其组合和溶剂。该组合物可以形成抗蚀剂下层膜，该抗蚀剂下层膜包括可水解的有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物或其组合，硅烷化合物中硅原子与硅原子键合的硅原子相对于硅原子总量，含有保护的脂族醇基的有机基团的比例为0.1〜40摩尔％。还描述了将组合物施加到半导体衬底上并烘烤该组合物以形成抗蚀剂下层膜的方法。

2. 发明申请

US20140120730A1 THIN FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING TITANIUM AND SILICON 有权
标题翻译：含有钛和硅的薄膜的薄膜成膜组合物
公开(公告)号：US20140120730A1
公开(公告)日：2014-05-01
申请号：US14131945
申请日：2012-07-20
申请人： Makoto Nakajima , Yuta Kanno , Satoshi Takeda , Yasushi Sakaida , Shuhei Shigaki
发明人： Makoto Nakajima , Yuta Kanno , Satoshi Takeda , Yasushi Sakaida , Shuhei Shigaki
IPC分类号： H01L21/033 , H01L21/311
CPC分类号： H01L21/0332 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/40 , H01L21/31111 , H01L21/31138
摘要： A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: R0aTi(R1)(4−a) Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B): R2a′R3bSi(R4)4−(a′+b) Formula (2) a hydrolysis product, or a hydrolysis-condensation product of the mixture, wherein the number of moles of Ti atom is 50% to 90% relative to the total moles in terms of Ti atom and Si atoms in the composition.
摘要翻译：用于形成用于制造半导体器件的抗蚀剂下层膜的薄膜形成组合物，并且抗蚀剂上层膜在不期望的UV光到达EUV抗蚀剂层之前吸收作为EUV抗蚀剂的上层的薄膜的不期望的UV光在EUV光刻中，用于EUV抗蚀剂的底层膜（硬掩模），反向材料以及用于溶剂显影用抗蚀剂的下层膜。该薄膜形成组合物与平版印刷工艺中的抗蚀剂一起使用，包括钛化合物（A）的混合物，其选自：R a Ti（R 1）（4-a）式（1）钛螯合化合物和可水解的钛二聚体，和硅化合物（B）：R2a'R3bSi（R4）4-（a'+ b）式（2）水解产物或混合物的水解缩合产物，其中Ti原子的摩尔数为相对于组合物中Ti原子和Si原子的总摩尔数为50〜90％。

3. 发明授权

US09093279B2 Thin film forming composition for lithography containing titanium and silicon 有权
标题翻译：用于含钛和硅的光刻的薄膜形成组合物
公开(公告)号：US09093279B2
公开(公告)日：2015-07-28
申请号：US14131945
申请日：2012-07-20
申请人： Makoto Nakajima , Yuta Kanno , Satoshi Takeda , Yasushi Sakaida , Shuhei Shigaki
发明人： Makoto Nakajima , Yuta Kanno , Satoshi Takeda , Yasushi Sakaida , Shuhei Shigaki
IPC分类号： G03F7/26 , H01L21/033 , G03F7/40 , H01L21/311 , G03F7/075 , G03F7/09
CPC分类号： H01L21/0332 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/40 , H01L21/31111 , H01L21/31138
摘要： A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: R0aTi(R1)(4-a) Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B): R2a′R3bSi(R4)4-(a′+b) Formula (2) a hydrolysis product, or a hydrolysis-condensation product of the mixture, wherein the number of moles of Ti atom is 50% to 90% relative to the total moles in terms of Ti atom and Si atoms in the composition.
摘要翻译：用于形成用于制造半导体器件的抗蚀剂下层膜的薄膜形成组合物，并且抗蚀剂上层膜在不期望的UV光到达EUV抗蚀剂层之前吸收作为EUV抗蚀剂的上层的薄膜的不期望的UV光在EUV光刻中，用于EUV抗蚀剂的底层膜（硬掩模），反向材料以及用于溶剂显影用抗蚀剂的下层膜。该薄膜形成组合物与平版印刷工艺中的抗蚀剂一起使用，包括钛化合物（A）的混合物，其选自：R a Ti（R 1）（4-a）式（1）钛螯合化合物和可水解的钛二聚体，和硅化合物（B）：R2a'R3bSi（R4）4-（a'+ b）式（2）水解产物或混合物的水解缩合产物，其中Ti原子的摩尔数为相对于组合物中Ti原子和Si原子的总摩尔数为50〜90％。

4. 发明申请

US20130183830A1 SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL 有权
标题翻译：用于形成耐下层膜的含硅组合物，其中含有保护的脂肪醇的有机基团
公开(公告)号：US20130183830A1
公开(公告)日：2013-07-18
申请号：US13825158
申请日：2011-09-14
申请人： Satoshi Takeda , Makoto Nakajima , Yuta Kanno
发明人： Satoshi Takeda , Makoto Nakajima , Yuta Kanno
IPC分类号： H01L21/033
CPC分类号： H01L21/0332 , C08G77/14 , C08G77/16 , C09D183/04 , G03F7/0752 , G03F7/091 , G03F7/094
摘要： Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.
摘要翻译：本文描述了用于形成用于溶剂可显影抗蚀剂的下层膜的组合物。这些组合物可以包括具有与含有保护的脂族醇基的有机基团键合的硅原子的水解性有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物，或其组合和溶剂。该组合物可以形成抗蚀剂下层膜，该抗蚀剂下层膜包括可水解的有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物或其组合，硅烷化合物中硅原子与硅原子键合的硅原子相对于硅原子总量，含有保护的脂族醇基的有机基团的比例为0.1〜40摩尔％。还描述了将组合物施加到半导体衬底上并烘烤该组合物以形成抗蚀剂下层膜的方法。

5. 发明申请

US20120070994A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND 有权
标题翻译：含有硫化物粘合剂的耐下层膜形成组合物
公开(公告)号：US20120070994A1
公开(公告)日：2012-03-22
申请号：US13375517
申请日：2010-05-28
申请人： Yuta Kanno , Makoto Nakajima , Wataru Shibayama
发明人： Yuta Kanno , Makoto Nakajima , Wataru Shibayama
IPC分类号： H01L21/312 , C07F7/18 , B32B9/00 , C08K5/548
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/091 , Y10T428/31663
摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R1aSi(R2)3-a]bR3 wherein R3 has a partial structure of Formula (2): R4—S—R5.
摘要翻译：提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成组合物; 以及使用用于光刻的下层膜形成组合物的抗蚀剂图案的形成方法。一种用于光刻的抗蚀剂下层膜形成组合物，包括：含硅原子的化合物，含有含硫原子的基团的可水解的有机硅烷，其水解产物或其水解缩合产物，其中在整个含硅原子的化合物，硫原子与硅原子的比例小于5摩尔％。可水解的有机硅烷优选为式（1）的化合物：[R a Si（R 2）3-a] b R 3，其中R 3具有式（2）的部分结构：R4-S-R5。

6. 发明授权

US09291900B2 Composition for forming resist underlayer film, containing silicon that bears diketone-structure-containing organic group 有权
标题翻译：用于形成抗蚀剂下层膜的组合物，其含有含有二酮结构的有机基团的硅
公开(公告)号：US09291900B2
公开(公告)日：2016-03-22
申请号：US13981142
申请日：2012-01-24
申请人： Yuta Kanno , Daisuke Sakuma , Makoto Nakajima
发明人： Yuta Kanno , Daisuke Sakuma , Makoto Nakajima
IPC分类号： G03F7/075 , G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/11 , C09D183/06 , C08L83/06 , H01L21/308 , C09D4/00 , C08G77/14
CPC分类号： G03F7/0752 , C08G77/14 , C08L83/06 , C09D4/00 , C09D183/06 , G03F7/0755 , G03F7/0757 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/30 , G03F7/36 , H01L21/3081 , H01L21/3088 , Y10T428/31663
摘要： A composition for forming a lithographic resist underlayer film, including, as a silane, a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below: [(R1)aSi(R2)(3-a)]b(R3) Formula (1) [where R3 is a group of Formula (2), (3), or (4): (in Formulae (2), (3), and (4), at least one from among R4, R5, and R6 is a group bonded to a silicon atom directly or through a linking group.), R1 is an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof, R2 is an alkoxy group, an acyloxy group, or a halogen atom].
摘要翻译：一种用于形成光刻抗蚀剂下层膜的组合物，其包含作为硅烷的可水解的有机硅烷，其水解物或其水解缩合物，其中所述硅烷包括下述式（1）的可水解的有机硅烷：[（R1）aSi（ R2）（3-a）] b（R3）式（1）[其中R3是式（2），（3）或（4）的基团：（在式（2），（3） 4）中，R4，R5和R6中的至少一个是直接或通过连接基与硅原子键合的基团。），R1是烷基，芳基，芳烷基，烷基卤基，芳基卤基，芳烷基卤基，烯基或具有环氧基，丙烯酰基，甲基丙烯酰基，巯基，氨基或氰基的有机基团，或其组合，R 2 是烷氧基，酰氧基或卤素原子]。

7. 发明授权

US08835093B2 Resist underlayer film forming composition containing silicon having anion group 有权
标题翻译：含有具有阴离子基团的硅的抗蚀剂下层膜形成组合物
公开(公告)号：US08835093B2
公开(公告)日：2014-09-16
申请号：US13133751
申请日：2009-12-16
申请人： Wataru Shibayama , Makoto Nakajima , Yuta Kanno
发明人： Wataru Shibayama , Makoto Nakajima , Yuta Kanno
IPC分类号： G03F7/004 , G03F7/11 , G03F7/075 , G03F7/09 , C08L83/04 , H01L21/308 , C09D183/04
CPC分类号： H01L21/3086 , C08L83/04 , C09D183/04 , G03F7/0752 , G03F7/091 , G03F7/11
摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R1aR2bSi(R3)4−(a+b) (1). A composition comprising a mixture of a hydrolyzable organosilane of Formula (1), and at least one organic silicon compound selected from the group consisting of a compound of Formula (2): R4aSi(R5)4−a (2) and a compound of Formula (3): [R6cSi(R7)3−c]2Yb (3); a hydrolysis product of the mixture; or a hydrolysis-condensation product of the mixture.
摘要翻译：提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。一种用于光刻的抗蚀剂下层膜形成组合物，其包含含有阴离子基团的硅烷化合物，其中含有阴离子基团的硅烷化合物是其中含有阴离子基团的有机基团与硅原子键合的可水解的有机硅烷，并且阴离子基团形成盐结构，其水解产物或其水解缩合产物。阴离子基团可以是羧酸阴离子，酚盐阴离子，磺酸阴离子或膦酸阴离子。可水解的有机硅烷可以是式（1）的化合物：R1aR2bSi（R3）4-（a + b）（1）。一种组合物，其包含式（1）的可水解有机硅烷和至少一种选自式（2）的化合物：R4aSi（R5）4-a（2）的化合物和式（3）：[R6cSi（R7）3-c] 2Yb（3）; 该混合物的水解产物; 或该混合物的水解缩合产物。

8. 发明申请

US20130302991A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP 有权
标题翻译：用于形成耐下层膜的组合物，含有含有酮结构的有机组织的硅
公开(公告)号：US20130302991A1
公开(公告)日：2013-11-14
申请号：US13981142
申请日：2012-01-24
申请人： Yuta Kanno , Daisuke Sakuma , Makoto Nakajima
发明人： Yuta Kanno , Daisuke Sakuma , Makoto Nakajima
IPC分类号： H01L21/308
CPC分类号： G03F7/0752 , C08G77/14 , C08L83/06 , C09D4/00 , C09D183/06 , G03F7/0755 , G03F7/0757 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/30 , G03F7/36 , H01L21/3081 , H01L21/3088 , Y10T428/31663
摘要： A composition for forming a lithographic resist underlayer film, including, as a silane, a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below: [(R1)aSi(R2)(3-a)]b(R3) Formula (1) [where R3 is a group of Formula (2), (3), or (4): (in Formulae (2), (3), and (4), at least one from among R4, R5, and R6 is a group bonded to a silicon atom directly or through a linking group.), R1 is an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof, R2 is an alkoxy group, an acyloxy group, or a halogen atom].
摘要翻译：一种用于形成光刻抗蚀剂下层膜的组合物，其包含作为硅烷的可水解的有机硅烷，其水解物或其水解缩合物，其中所述硅烷包括下述式（1）的可水解的有机硅烷：[（R1）aSi（ R2）（3-a）] b（R3）式（1）[其中R3是式（2），（3）或（4）的基团：（在式（2），（3） 4）中，R4，R5和R6中的至少一个是直接或通过连接基与硅原子键合的基团。），R1是烷基，芳基，芳烷基，烷基卤基，芳基卤基，芳烷基卤基，烯基或具有环氧基，丙烯酰基，甲基丙烯酰基，巯基，氨基或氰基的有机基团，或其组合，R 2 是烷氧基，酰氧基或卤素原子]。

9. 发明申请

US20110143149A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP 有权
标题翻译：含有硅集合体的耐下层膜成膜组合物
公开(公告)号：US20110143149A1
公开(公告)日：2011-06-16
申请号：US13058109
申请日：2009-08-13
申请人： Wataru Shibayama , Makoto Nakajima , Yuta Kanno
发明人： Wataru Shibayama , Makoto Nakajima , Yuta Kanno
IPC分类号： B32B9/04 , C07F7/02 , C09D7/12 , H01L21/311
CPC分类号： G03F7/0755 , C08G77/26 , C09D5/006 , C09D183/08 , G03F7/0045 , G03F7/0757 , G03F7/095 , Y10T428/31663
摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4-(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.
摘要翻译：提供了用于形成抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物，能够用作硬掩模或底部抗反射涂层，或者不与抗蚀剂混合并具有干蚀刻速率的抗蚀剂下层膜高于抗蚀剂。一种包含具有鎓基的硅烷化合物的成膜组合物，其中具有鎓基的硅烷化合物是其分子中具有鎓基，其水解产物或其水解缩合产物的可水解的有机硅烷。该组合物用作光刻的抗蚀剂下层膜形成组合物。包含具有鎓基的硅烷化合物和不具有鎓基的硅烷化合物的组合物，其中具有鎓基的硅烷化合物以小于1摩尔％的比例存在于全部硅烷化合物中，例如0.01至0.95 ％摩尔。可水解的有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。 14.一种抗蚀剂下层膜，其通过将权利要求1〜14中任一项所述的组合物涂布在半导体基板上，并烘烤该组合物而得到。

10. 发明授权

US09524871B2 Silicon-containing resist underlayer film-forming composition having sulfone structure 有权
标题翻译：具有砜结构的含硅抗蚀剂下层膜形成组合物
公开(公告)号：US09524871B2
公开(公告)日：2016-12-20
申请号：US14236136
申请日：2012-08-10
申请人： Makoto Nakajima , Daisuke Sakuma , Yuta Kanno , Takahiro Kishioka
发明人： Makoto Nakajima , Daisuke Sakuma , Yuta Kanno , Takahiro Kishioka
IPC分类号： H01L21/027 , G03F7/11 , C07F7/18 , G03F7/075 , G03F7/09 , H01L21/311
CPC分类号： H01L21/0274 , C07F7/1804 , G03F7/0752 , G03F7/091 , G03F7/094 , H01L21/0276 , H01L21/31133
摘要： A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): [(R1)aSi(R2)(3−a)]b(R3) Formula (1) [in Formula (1), R3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

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