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1. 发明授权

US06279504B1 Plasma CVD system 有权
标题翻译：等离子体CVD系统
公开(公告)号：US06279504B1
公开(公告)日：2001-08-28
申请号：US09204504
申请日：1998-12-04
申请人： Satoshi Takaki , Koji Teranishi
发明人： Satoshi Takaki , Koji Teranishi
IPC分类号： C23C1600
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： A plasma CVD system has a reactor which can be evacuated, a substrate holding means in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying an electrode high-frequency power of 30 MHz to 600 MHz, generated by a high-frequency power source, and means for exhausting gas remaining in the reactor after the reaction. The high-frequency power is supplied to produce a plasma across a substrate in the reactor to form a deposited film on the substrate, and the phase of reflected power is adjusted on the electrode at a side opposite the feeding point. High-quality deposited films having very uniform film thickness and homogeneous film quality can be formed at a high rate and stably on large-area substrates having any shapes.
摘要翻译：等离子体CVD系统具有可以抽真空的反应器，反应器中的基板保持装置，用于将等离子体CVD的原料气体进料到反应器中的原料气体供给装置;高频电源装置，由高频电源产生的30MHz至600MHz的频率功率以及在反应后排出残留在反应器中的气体的装置。供给高频电力以在反应器中的基板上产生等离子体，以在基板上形成沉积膜，并且在与馈电点相对的一侧在电极上调整反射功率的相位。可以在具有任何形状的大面积基板上以高速率和稳定地形成具有非常均匀的膜厚度和均匀膜质量的高质量沉积膜。

2. 发明授权

US06333079B1 Plasma CVD process 有权
标题翻译：等离子体CVD工艺
公开(公告)号：US06333079B1
公开(公告)日：2001-12-25
申请号：US09874251
申请日：2001-06-06
申请人： Satoshi Takaki , Koji Teranishi
发明人： Satoshi Takaki , Koji Teranishi
IPC分类号： H05H124
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： In a plasma CVD system comprises a reactor the inside of which can be evacuated, a substrate holding means provided in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying to a plasma-producing high-frequency electrode a high-frequency power having an oscillation frequency in the range of from 30 MHz to 600 MHz, generated by a high-frequency power source, and an exhaust means for exhausting a gas remaining in the reactor after the reaction; the high-frequency power generated in the high-frequency power source being supplied to the plasma-producing high-frequency electrode to cause a plasma to take place across a substrate held by the substrate holding means and the plasma-producing high-frequency electrode to form a deposited film on the substrate; the phase of reflected power is adjusted on the plasma-producing high-frequency electrode at its part on the opposite side of the feeding point. High-quality deposited films having a very uniform film thickness and a homogeneous film quality can be formed at a high rate and stably on large-area substrates having any shapes, to obtain semiconductor devices in a good efficiency.
摘要翻译：在等离子体CVD系统中，包括其内部可被抽真空的反应器，设置在反应器中的基板保持装置，用于向反应器供应用于等离子体CVD的原料气体的材料气体供给装置，用于向等离子体产生高频电极供给具有由高频电源产生的振荡频率在30MHz至600MHz范围内的高频功率;以及排气装置，用于排出残留在所述高频电源中的气体反应后反应; 在高频电源中产生的高频电力被供给到等离子体产生高频电极，以使等离子体在由基板保持装置和等离子体产生高频电极保持的基板上发生，在基板上形成沉积膜;在等离子体产生高频电极的馈电点相对侧的部分调整反射功率的相位。可以在具有任何形状的大面积基板上以高速率和稳定地形成具有非常均匀的膜厚度和均匀膜质量的高质量沉积膜，从而以高效率获得半导体器件。

3. 发明授权

US6152071A High-frequency introducing means, plasma treatment apparatus, and plasma treatment method 失效
标题翻译：高频引入装置，等离子体处理装置和等离子体处理方法
公开(公告)号：US6152071A
公开(公告)日：2000-11-28
申请号：US988137
申请日：1997-12-10
申请人： Kazuyoshi Akiyama , Atsushi Yamagami , Satoshi Takaki , Koji Teranishi
发明人： Kazuyoshi Akiyama , Atsushi Yamagami , Satoshi Takaki , Koji Teranishi
IPC分类号： C23C16/24 , C23C16/509 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/24 , C23C16/509 , H01J37/32082
摘要： A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.
摘要翻译：提供了一种高频引入装置，其包括具有用于通过高频功率产生等离子体的棒或板形状的高频电极，以及调节机构，用于调节与高电位相反的电极端部之间的电抗绝对值电极的高频功率引入点和接地部分。使用上述高频引入装置也提供了等离子体处理装置和等离子体处理方法。通过调整电抗的绝对值，在大面积的基底构件上以高速度，以高度均匀的质量稳定有效地形成高品质的沉积膜。

4. 发明授权

US6145469A Plasma processing apparatus and processing method 失效
标题翻译：等离子体处理装置及处理方法
公开(公告)号：US6145469A
公开(公告)日：2000-11-14
申请号：US853449
申请日：1997-05-09
申请人： Koji Teranishi , Atsushi Yamagami , Satoshi Takaki
发明人： Koji Teranishi , Atsushi Yamagami , Satoshi Takaki
IPC分类号： H05H1/46 , C23C14/34 , C23C16/50 , C23C16/505 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L31/20 , C23C16/00
CPC分类号： H01J37/32091 , C23C14/34 , C23C16/507 , H01J37/32532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform, and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.
摘要翻译：等离子体处理装置具有设置在能够降低压力的反应容器中的基板保持件，用于放置待处理的基板，用于将工艺气体供给到反应容器中的装置，通过匹配电路从高频波电源到反应容器内部的频率波功率，其特征在于反应容器的至少一部分由电介质构成，阴极电极布置在外部使得反应容器中的等离子体分布均匀，并且可以对待处理的基板进行均匀的等离子体处理。等离子体工艺包括CVD，溅射，蚀刻或灰化。

5. 发明授权

US06558507B1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06558507B1
公开(公告)日：2003-05-06
申请号：US09664339
申请日：2000-09-18
申请人： Koji Teranishi , Atsushi Yamagami , Satoshi Takaki
发明人： Koji Teranishi , Atsushi Yamagami , Satoshi Takaki
IPC分类号： C23C1600
CPC分类号： H01J37/32091 , C23C14/34 , C23C16/507 , H01J37/32532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A plasma processing apparatus has a substrate holder, arranged in a vessel which can be reduced in pressure, for placing a substrate to be processed there on, a process gas fed into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.
摘要翻译：一种等离子体处理装置具有：衬底保持器，布置在可以减压的容器中，用于放置待处理的衬底，供给到反应容器中的工艺气体和用于提供高频波的阴极通过匹配电路从高频波电源向反应容器的内部供电，其特征在于反应容器的至少一部分由电介质构成，阴极设置在反应的外侧使得反应容器中的等离子体分布均匀，并且可以对待处理的基板进行均匀的等离子体处理。等离子体工艺包括CVD，溅射，蚀刻或灰化。

6. 发明授权

US07582194B2 Method and apparatus for forming fluoride thin film 有权
标题翻译：形成氟化物薄膜的方法和装置
公开(公告)号：US07582194B2
公开(公告)日：2009-09-01
申请号：US10900170
申请日：2004-07-28
申请人： Satoshi Takaki
发明人： Satoshi Takaki
IPC分类号： C23C14/00 , C23C14/32 , C25B11/00 , C25B13/00
CPC分类号： C23C14/0694 , C23C14/0047 , C23C14/0057
摘要： There are provided a method and an apparatus for forming a fluoride thin film having a desired refractive index and no absorption throughout a range including the ultraviolet region and the visible region, using a sputtering method. The method of forming a fluoride thin film according to the present invention is a method of forming a metal fluoride thin film on a substrate by performing reactive sputtering with a gas comprising fluorine by use of a metal target, which comprises irradiating a gas comprising fluorine with electrons having an energy less than the ionization energy of the gas comprising fluorine to activate the gas and introducing the activated gas into a reaction apace, thereby performing sputtering.
摘要翻译：提供了一种使用溅射法形成在包括紫外线区域和可见光区域的范围内具有期望的折射率和无吸收的氟化物薄膜的方法和装置。根据本发明的形成氟化物薄膜的方法是通过使用金属靶对包含氟的气体进行反应溅射而在基板上形成金属氟化物薄膜的方法，其包括将包含氟的气体与电子的能量小于包含氟的气体的电离能，以激活气体并将活化气体引入到反应中，从而进行溅射。

7. 发明授权

US6065425A Plasma process apparatus and plasma process method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US6065425A
公开(公告)日：2000-05-23
申请号：US120319
申请日：1998-07-22
申请人： Satoshi Takaki , Atsushi Yamagami
发明人： Satoshi Takaki , Atsushi Yamagami
IPC分类号： C23C16/24 , C23C16/509 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/509 , H01J37/32541 , H01J37/32577
摘要： In order to effect a plasma process at a high rate, such as formation of a high-quality deposit film having very uniform thickness and quality over a large-area substrate, (1) an oscillation frequency of an RF generator is used in the range of 30 to 600 MHz, (2) a matching circuit and a cathode electrode are connected through a transmission line and RF power is supplied through the transmission line, (3) the cathode electrode is of an electrically conductive structure of a rod shape and at a connection part between the cathode electrode and an inner conductor of the transmission line, an external shape of a cross section of the cathode electrode is the same as an external shape of a cross section of the inner conductor, and (4) at least the connection part between the cathode electrode and the inner conductor of the transmission line is covered by a dielectric member having the same external shape as an external shape of a transmission medium in the cross section of the transmission line.
摘要翻译：为了以高速率实现等离子体处理，例如在大面积基板上形成具有非常均匀厚度和质量的高质量沉积膜，（1）RF发生器的振荡频率在该范围内（2）匹配电路和阴极通过传输线连接，并且通过传输线提供RF功率，（3）阴极电极为棒状的导电结构，并且在阴极与传输线的内导体之间的连接部分，阴极的横截面的外形与内导体的横截面的外形相同，（4）至少在传输线的横截面中，阴极和传输线的内部导体之间的连接部分被具有与传输介质的外部形状相同外形的电介质部件覆盖 ne。

8. 发明授权

US06435130B1 Plasma CVD apparatus and plasma processing method 失效
标题翻译：等离子体CVD装置和等离子体处理方法
公开(公告)号：US06435130B1
公开(公告)日：2002-08-20
申请号：US08916540
申请日：1997-08-22
申请人： Satoshi Takaki , Yoshio Segi , Atsushi Yamagami , Hiroyuki Katagiri , Hitoshi Murayama , Yasuyoshi Takai
发明人： Satoshi Takaki , Yoshio Segi , Atsushi Yamagami , Hiroyuki Katagiri , Hitoshi Murayama , Yasuyoshi Takai
IPC分类号： C23C16509
CPC分类号： H01J37/32091 , C23C16/24 , C23C16/45578 , C23C16/509 , G03G5/08278
摘要： A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member. A plasma-processing method using said cathode electrode.
摘要翻译：一种等离子体CVD装置，包括：基本封闭的反应室，其包含基板保持装置和布置在其中的阴极电极，其中来自高频电源的高频功率被提供给所述阴极，以在所述基板保持装置之间产生等离子体，所述基板保持装置具有位于在其上和所述阴极电极，由此对所述衬底进行等离子体处理，其特征在于，所述阴极包括位于基本上相同的轴上的多个导体构件，所述多个导体构件通过电介质构件电容耦合。1。一种使用所述阴极电极的等离子体处理方法。

9. 发明授权

US5534070A Plasma CVD process using a very-high-frequency and plasma CVD apparatus 失效
标题翻译：使用非常高频和等离子体CVD装置的等离子体CVD工艺
公开(公告)号：US5534070A
公开(公告)日：1996-07-09
申请号：US343560
申请日：1994-11-30
申请人： Nobuyuki Okamura , Atsushi Yamagami , Satoshi Takaki
发明人： Nobuyuki Okamura , Atsushi Yamagami , Satoshi Takaki
IPC分类号： C23C16/50 , C23C16/505 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00 , H05H1/20
CPC分类号： H01J37/321 , C23C16/509 , H01J37/32532
摘要： A plasma CVD process comprises conducting film formation in a reaction chamber capable of being substantially vacuumed in which a plurality of cylindrical substrates are spacedly arranged on a concentric circle in said reaction chamber such that a desired discharge space is formed at the central position of the inside of said reaction chamber and a cathode electrode is disposed at the central position of said discharge space, by introducing a film-forming gas into said discharge space and applying a high frequency power from a high frequency power source to said cathode electrode to produce plasma between said plurality of cylindrical substrates and said cathode electrode, whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates, characterized in that an earth shield comprising a non-magnetic material and a soft magnetic material or an insulating material being stacked is disposed at each of the opposite end portions of said cathode electrode, and a very-high-frequency energy of a frequency range of 60 MHz or more from said high frequency power source is applied to said cathode electrode to produce plasma in said reaction chamber whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates. And a VHF plasma CVD apparatus suitable for practicing the plasma CVD process.
摘要翻译： PCT No.PCT / JP94 / 00537 371日期1994年11月30日 102（e）1994年11月30日PCT PCT日期为1994年3月31日。等离子体CVD工艺包括在能够基本上被抽真空的反应室中进行成膜，其中多个圆柱形基板间隔布置在同心圆上所述反应室使得在所述反应室的内部的中心位置处形成期望的放电空间，并且在所述放电空间的中心位置处设置阴极，通过将成膜气体引入所述放电空间并施加从高频电源到所述阴极电极的高频电力，以在所述多个圆柱形基板和所述阴极之间产生等离子体，由此在所述多个圆柱形基板中的每一个的表面上形成沉积膜，其特征在于，包括非磁性材料和软磁性材料或层叠的绝缘材料的屏蔽设置在每一个上 e所述阴极电极的相对端部分，并且将所述高频电源的频率范围为60MHz或更高的非常高频能量施加到所述阴极以在所述反应室中产生等离子体，由此形成沉积膜在所述多个圆柱形基底中的每一个的表面上。以及适用于实施等离子体CVD工艺的VHF等离子体CVD装置。

10. 发明授权

US5449880A Process and apparatus for forming a deposited film using microwave-plasma CVD 失效
标题翻译：使用微波等离子体CVD形成沉积膜的方法和装置
公开(公告)号：US5449880A
公开(公告)日：1995-09-12
申请号：US93633
申请日：1993-07-20
申请人： Satoshi Takaki
发明人： Satoshi Takaki
IPC分类号： C23C16/50 , C04B28/08 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/31 , B23K10/00 , H05B7/06
CPC分类号： H01J37/3222 , C23C16/511 , H01J37/32192 , H01J37/32229
摘要： A process for forming a deposited film on a substrate by microwave plasma CVD comprises holding a substrate in a pressure-reducible reactor vessel, introducing microwave energy into the reactor vessel from at least three microwave-introducing means attached thereto for introducing the microwave energy into the reactor vessel while introducing a raw material gas into the reactor vessel, and forming plasma in the reactor vessel by the microwave energy, thereby forming a deposited film on the surface of the substrate.
摘要翻译：通过微波等离子体CVD在衬底上形成沉积膜的方法包括将衬底保持在可压力可降低的反应器容器中，将微波能量从附着于其上的至少三个微波引入装置引入反应器容器中，以将微波能量引入到反应器容器，同时将原料气体引入反应器容器中，并通过微波能量在反应器容器中形成等离子体，从而在基板的表面上形成沉积膜。

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