专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08320803B2 Developing device and cartridge 失效
标题翻译：开发设备和墨盒
公开(公告)号：US08320803B2
公开(公告)日：2012-11-27
申请号：US12850014
申请日：2010-08-04
申请人： Satoshi Shinozaki , Daisuke Baba
发明人： Satoshi Shinozaki , Daisuke Baba
IPC分类号： G03G15/08 , G03G15/09
CPC分类号： G03G15/0877 , G03G15/0865 , G03G2215/0844 , G03G2215/085
摘要： A developing device includes a developing container for accommodating a developer; a developer carrying member, provided rotatably in the developing container, for carrying and feeding the developer to develop an electrostatic image; a developer feeding member, including an elastic feeding portion and being rotatably provided in the developing container, for feeding the developer in the developing container toward the developer carrying member; and a circulation changing member for changing circulation of the developer in the neighborhood of the developer carrying member. In a plane perpendicular to a rotational axis of the developer carrying member, the circulation changing member is provided in a maximum rotation area of the developer feeding member so as to create a gap between itself and an entire inner surface of the developing container and a gap between itself and the developer carrying member.
摘要翻译：显影装置包括用于容纳显影剂的显影容器; 显影剂承载构件，其可旋转地设置在显影容器中，用于承载和供给显影剂以显影静电图像; 显影剂供给构件，包括弹性进给部分，并且可旋转地设置在显影容器中，用于将显影剂的显影剂供给显影剂承载构件; 以及用于改变显影剂承载构件附近的显影剂的循环的循环改变构件。在垂直于显影剂承载构件的旋转轴线的平面中，循环改变构件设置在显影剂供给构件的最大旋转区域中，以便在其与显影容器的整个内表面之间产生间隙，在它们与显影剂承载构件之间。

2. 发明申请

US20110033210A1 DEVELOPING DEVICE AND CARTRIDGE 失效
标题翻译：开发设备和卡座
公开(公告)号：US20110033210A1
公开(公告)日：2011-02-10
申请号：US12850014
申请日：2010-08-04
申请人： Satoshi Shinozaki , Daisuke Baba
发明人： Satoshi Shinozaki , Daisuke Baba
IPC分类号： G03G15/09
CPC分类号： G03G15/0877 , G03G15/0865 , G03G2215/0844 , G03G2215/085
摘要： A developing device includes a developing container for accommodating a developer; a developer carrying member, provided rotatably in the developing container, for carrying and feeding the developer to develop an electrostatic image; a developer feeding member, including an elastic feeding portion and being rotatably provided in the developing container, for feeding the developer in the developing container toward the developer carrying member; and a circulation changing member for changing circulation of the developer in the neighborhood of the developer carrying member. In a plane perpendicular to a rotational axis of the developer carrying member, the circulation changing member is provided in a maximum rotation area of the developer feeding member so as to create a gap between itself and an entire inner surface of the developing container and a gap between itself and the developer carrying member.
摘要翻译：显影装置包括用于容纳显影剂的显影容器; 显影剂承载构件，其可旋转地设置在显影容器中，用于承载和供给显影剂以显影静电图像; 显影剂供给构件，包括弹性进给部分，并且可旋转地设置在显影容器中，用于将显影剂的显影剂供给显影剂承载构件; 以及用于改变显影剂承载构件附近的显影剂的循环的循环改变构件。在垂直于显影剂承载构件的旋转轴线的平面中，循环改变构件设置在显影剂供给构件的最大旋转区域中，以便在其与显影容器的整个内表面之间产生间隙，在它们与显影剂承载构件之间。

3. 发明申请

US20130305411A1 METHOD FOR CONFERRING DISEASE RESISTANCE TO PLANT 审中-公开
标题翻译：防止植物抗病的方法
公开(公告)号：US20130305411A1
公开(公告)日：2013-11-14
申请号：US13878199
申请日：2011-10-07
申请人： Hideo Nakashita , Michiko Yasuda , Shuhei Shima , Satoshi Shinozaki
发明人： Hideo Nakashita , Michiko Yasuda , Shuhei Shima , Satoshi Shinozaki
IPC分类号： C12N15/82
CPC分类号： C12N15/8282 , C07K14/415 , C12N15/8279
摘要： Disease resistance is conferred to a plant by a technique completely differing from conventional techniques. The method of the present invention comprises a step of introducing at least one of the genes belonging to the TIFY family to a plant or enhancing the expression of the gene endogenous to the plant.
摘要翻译：通过与传统技术完全不同的技术赋予植物抗病性。本发明的方法包括将属于TIFY家族的至少一种基因引入植物或增强植物内源基因表达的步骤。

4. 发明授权

US06288631B1 Power-line carrier communications system 有权
标题翻译：电力线载波通信系统
公开(公告)号：US06288631B1
公开(公告)日：2001-09-11
申请号：US09456495
申请日：1999-12-08
申请人： Satoshi Shinozaki , Masahiro Maki , Yuji Igata
发明人： Satoshi Shinozaki , Masahiro Maki , Yuji Igata
IPC分类号： H04M1104
CPC分类号： H04L1/0071 , H04B3/542 , H04L1/0041 , H04L1/04 , H04L27/2601
摘要： An object of the present invention is to provide a reliable power-line carrier communications system having a resistance to high-level impulse noise synchronized with power-cycle frequency in virtue of redundancy on both time and frequency axes. An interleave part (11) shuffles, in n interleaving ways, transmitting symbols in a unit of symbol stream of the same length as a noise cycle. A modulation part (12) modulates the n-type symbol streams with n-piece carriers. A demodulation part (22) extracts amplitude/phase information from each of the n-piece carriers, and then outputs the information as amplitude/phase information streams. A de-interleave part (23) unshuffles the amplitude/phase information streams. A determination part (24) determines a symbol value from amplitude/phase information values in the same timing in the amplitude/phase information streams, and then outputs the values in a receiving symbol stream.
摘要翻译：本发明的目的是提供一种可靠的电力线载波通信系统，其具有由于时间和频率轴上的冗余而具有与功率周期频率同步的高电平脉冲噪声的阻力。交织部分（11）洗牌以n个交织方式，以与噪声周期相同长度的符号流的单位发送符号。调制部分（12）用n片载波调制n型符号流。解调部分（22）从n个载波中的每一个提取振幅/相位信息，然后将该信息作为振幅/相位信息流输出。解交织部分（23）对振幅/相位信息流进行非混洗。确定部分（24）在幅度/相位信息流中以相同定时的幅度/相位信息值确定符号值，然后输出接收符号流中的值。

5. 发明授权

US5110766A Method of manufacturing a semiconductor device including forming a flattening layer over hollows in a contact hole 失效
标题翻译：制造半导体器件的方法，包括在接触孔中形成中空层的平坦层
公开(公告)号：US5110766A
公开(公告)日：1992-05-05
申请号：US549632
申请日：1990-07-06
申请人： Satoshi Maeda , Shizuo Sawada , Satoshi Shinozaki
发明人： Satoshi Maeda , Shizuo Sawada , Satoshi Shinozaki
IPC分类号： H01L21/768 , H01L27/108
CPC分类号： H01L21/76819 , H01L21/76877 , H01L27/10805
摘要： A method of manufacturing a semiconductor device, in particular a contact portion of the wiring of the device. An insulating layer is formed on a semiconductor substrate, a contact hole is formed on the insulating layer by etching, and a first conductive layer having hollows is formed on the insulating layer and in the contact hole. Next, a flattening layer is formed to flatten the surface of device structure, and a part of the first conductive layer is exposed by etching the flattening layer to permit a part of the flattening layer to remain in hollows of device structure. Next, a second conductive layer is formed on the remaining flattening layer and the exposed part of the first conductive layer, and is connected to the semiconductor substrate.

6. 发明授权

US4532701A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4532701A
公开(公告)日：1985-08-06
申请号：US410083
申请日：1982-08-19
申请人： Shuichi Kameyama , Satoshi Shinozaki , Hiroshi Iwai
发明人： Shuichi Kameyama , Satoshi Shinozaki , Hiroshi Iwai
IPC分类号： H01L21/762 , H01L21/763 , H01L21/76
CPC分类号： H01L21/763 , H01L21/76229 , Y10S148/02 , Y10S148/05 , Y10S148/085
摘要： A method of manufacturing a semiconductor device which comprises a step of forming a first groove in a semiconductor layer, a step of filling the first groove with a first insulating film, a step of selectively etching the first insulating film in the first groove to form at least one second groove having a small width, and a step of filling the second groove with a second insulating film to form an isolation layer having a large width and substantially flush with the semiconductor layer.
摘要翻译：一种制造半导体器件的方法，包括在半导体层中形成第一凹槽的步骤，用第一绝缘膜填充第一凹槽的步骤，选择性地蚀刻第一凹槽中的第一绝缘膜以形成具有小宽度的至少一个第二凹槽，以及用第二绝缘膜填充第二凹槽的步骤，以形成宽度大致与半导体层基本齐平的隔离层。

7. 发明授权

US4476157A Method for manufacturing schottky barrier diode 失效
标题翻译：制造肖特基势垒二极管的方法
公开(公告)号：US4476157A
公开(公告)日：1984-10-09
申请号：US402541
申请日：1982-07-28
申请人： Satoshi Shinozaki
发明人： Satoshi Shinozaki
IPC分类号： H01L21/285 , H01L21/24
CPC分类号： H01L21/28537
摘要： Disclosed is a method for manufacturing a Schottky barrier diode. An insulating film is formed on a silicon substrate of one conductivity type. The insulating film has a hole therein partially exposing the surface of the silicon substrate. Then, a polycrystalline silicon layer is formed to cover that portion of the insulating film which surrounds the contact hole, the inner wall of the contact hole, and the exposed surface portion of the silicon substrate. Thereafter, a metal layer is deposited to cover at least the polycrystalline silicon layer. The polycrystalline silicon is then alloyed with the metal to form a metal silicide layer.
摘要翻译：公开了一种制造肖特基势垒二极管的方法。在一种导电类型的硅衬底上形成绝缘膜。绝缘膜具有一部分露出硅衬底表面的孔。然后，形成多晶硅层以覆盖围绕接触孔，接触孔的内壁和硅衬底的暴露表面部分的绝缘膜的那部分。此后，沉积金属层以至少覆盖多晶硅层。然后将多晶硅与金属合金化以形成金属硅化物层。

8. 发明申请

US20090220647A1 Method for preventing of formation of abnormal odor in beverage composition 失效
标题翻译：防止饮料组合物中异味发生的方法
公开(公告)号：US20090220647A1
公开(公告)日：2009-09-03
申请号：US11921902
申请日：2006-06-09
申请人： Satoshi Shinozaki , Toshimasa Higuchi , Ryoko Ishikawa
发明人： Satoshi Shinozaki , Toshimasa Higuchi , Ryoko Ishikawa
IPC分类号： A23L2/84
CPC分类号： A23L2/66 , A23L2/44 , A23L2/52 , A23L2/68 , A23L33/15 , A23L33/175 , A23L33/18 , A23V2002/00 , A23V2250/7044 , A23V2250/708 , A23V2250/06 , A23V2250/54246
摘要： A beverage composition is disclosed that comprises a mixture of a protein hydrolysate and vitamin B2, and also contains an amount of ascorbic acid sufficient to prevent the generation of an off-flavor when the mixture is exposed to light. The off-flavor generated upon exposure to light can be reduced in accordance with the beverage composition of the present invention. Alss disclosed is a method for preventing an off-flavor in a beverage composition containing a protein hydrolysate and vitamin B2, and a process for producing a beverage composition containing a protein hydrolysate and vitamin B2. Furthermore, an agent for preventing an off-flavor in a beverage composition containing a protein hydrolysate and vitamin B2, wherein the agent comprises ascorbic acid as an active ingredient is disclosed.
摘要翻译：公开了包含蛋白质水解物和维生素B2的混合物的饮料组合物，并且还含有足以防止混合物暴露于光时产生异味的抗坏血酸的量。根据本发明的饮料组合物可以减少暴露在光下产生的异味。公开了一种防止含有蛋白质水解物和维生素B2的饮料组合物的异味的方法，以及含有蛋白质水解物和维生素B2的饮料组合物的制造方法。此外，公开了一种用于防止含有蛋白质水解物和维生素B2的饮料组合物中的异味的试剂，其中该试剂包含抗坏血酸作为活性成分。

9. 发明授权

US07026687B2 Non-volatile semiconductor memory and method of manufacturing the same 有权
公开(公告)号：US07026687B2
公开(公告)日：2006-04-11
申请号：US10387427
申请日：2003-03-14
申请人： Satoshi Shinozaki , Mitsuteru Iijima , Hideo Kurihara
发明人： Satoshi Shinozaki , Mitsuteru Iijima , Hideo Kurihara
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/66833 , H01L29/7887 , H01L29/7923
摘要： A proposed non-volatile semiconductor memory and a method of manufacturing the same are directed to performing stable and highly reliable operations. First, grooves are formed in a p-type silicon semiconductor substrate, and impurity diffusion layers are formed on the bottom surfaces of the grooves. A gate insulating film is then formed on the p-type silicon semiconductor substrate. This gate insulating film has a three-layer structure in which a first insulating film made of a silicon oxide film, a charge capturing film made of a silicon nitride film, and a second insulating film made of a silicon oxide film, are laminated in this order. A gate electrode is then formed on the gate insulating film. A convexity formed by the grooves serves as the channel region of the non-volatile semiconductor memory. Even if the device size is reduced, an effective channel length can be secured in this non-volatile semiconductor memory. Thus, excellent stability and reliability can be achieved.

10. 发明授权

US06548745B2 Italian rye grass and a method of introducing endophytic fungi into an italian rye grass 失效
标题翻译：意大利黑麦草和将内生真菌引入意大利黑麦草的方法
公开(公告)号：US06548745B2
公开(公告)日：2003-04-15
申请号：US09789722
申请日：2001-02-22
申请人： Naoya Hiruma , Satoshi Shinozaki
发明人： Naoya Hiruma , Satoshi Shinozaki
IPC分类号： A01H30000
CPC分类号： A01N63/04 , A01H3/00 , A01H5/12 , Y02A40/15 , Y10S435/911
摘要： To provide an Italian rye grass with excellent characteristics, and in particular, excellent insect resistance and disease resistance, an endophyte, which is a filamentous endophytic fungus living together with a wild plant occurring in nature, is isolated and artificially grown, and made to live symbiotically in Italian rye grass by inoculating and infecting the grass with the artificially grown endophyte.
摘要翻译：为了提供具有优良特性，特别是优异的抗病性和抗病性的意大利黑麦草，与天然发生的野生植物一起生活的丝状内生真菌的内生真菌被分离并人工生长，并使其生活通过用人造生长的内生真菌接种和感染草，在意大利黑麦草中共生。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式