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    • 7. 发明授权
    • Organic EL display device and manufacturing method thereof
    • 有机EL显示装置及其制造方法
    • US08558267B2
    • 2013-10-15
    • US13591674
    • 2012-08-22
    • Kazuhiko KaiMasahiro TanakaYoshinori Ishii
    • Kazuhiko KaiMasahiro TanakaYoshinori Ishii
    • H05B33/04
    • H01L51/56H01L51/5246H01L2251/568
    • An organic EL display device manufacturing method that allows the reliability of the organic EL display device having undergone a defect repair process to be improved. Manufacturing method for organic EL display device, method including an organic EL element substrate formation step of forming at least one organic EL element on an organic EL element substrate, the organic EL element including an organic EL film, an anode electrode, reflection electrode that form a first conductive film provided below the organic EL film, a cathode electrode that forms a second conductive film provided above the to organic EL film, resin sealing step of providing a thermoplastic sealing resin to cover the upper side of the organic EL element, defect detection step of detecting a defect in the organic EL element, and defect elimination step of eliminating the defect detected in the defect detection step by irradiating the defect with a laser beam.
    • 有机EL显示装置的制造方法能够提高经历了缺陷修复处理的有机EL显示装置的可靠性。 有机EL显示装置的制造方法,包括在有机EL元件基板上形成至少一个有机EL元件的有机EL元件基板形成工序的方法,所述有机EL元件包括有机EL膜,阳极电极,形成 设置在有机EL膜下方的第一导电膜,形成在有机EL膜上方设置的第二导电膜的阴极电极,提供热塑性密封树脂以覆盖有机EL元件的上侧的树脂密封步骤,缺陷检测 检测有机EL元件中的缺陷的步骤,以及通过用激光束照射缺陷来消除在缺陷检测步骤中检测到的缺陷的缺陷消除步骤。
    • 8. 发明申请
    • Organic EL Display Device and Manufacturing Method Thereof
    • 有机EL显示装置及其制造方法
    • US20120313514A1
    • 2012-12-13
    • US13591674
    • 2012-08-22
    • Kazuhiko KaiMasahiro TanakaYoshinori Ishii
    • Kazuhiko KaiMasahiro TanakaYoshinori Ishii
    • H05B33/04
    • H01L51/56H01L51/5246H01L2251/568
    • An organic EL display device manufacturing method that allows the reliability of the organic EL display device having undergone a defect repair process to be improved. Manufacturing method for organic EL display device, method including an organic EL element substrate formation step of forming at least one organic EL element on an organic EL element substrate, the organic EL element including an organic EL film, an anode electrode, reflection electrode that form a first conductive film provided below the organic EL film, a cathode electrode that forms a second conductive film provided above the to organic EL film, resin sealing step of providing a thermoplastic sealing resin to cover the upper side of the organic EL element, defect detection step of detecting a defect in the organic EL element, and defect elimination step of eliminating the defect detected in the defect detection step by irradiating the defect with a laser beam.
    • 有机EL显示装置的制造方法能够提高经历了缺陷修复处理的有机EL显示装置的可靠性。 有机EL显示装置的制造方法,包括在有机EL元件基板上形成至少一个有机EL元件的有机EL元件基板形成工序的方法,所述有机EL元件包括有机EL膜,阳极电极,形成 设置在有机EL膜下方的第一导电膜,形成在有机EL膜上方设置的第二导电膜的阴极电极,提供热塑性密封树脂以覆盖有机EL元件的上侧的树脂密封步骤,缺陷检测 检测有机EL元件中的缺陷的步骤,以及通过用激光束照射缺陷来消除在缺陷检测步骤中检测到的缺陷的缺陷消除步骤。
    • 10. 发明申请
    • Organic Electroluminescence Display Device and Manufacturing Method Thereof
    • 有机电致发光显示装置及其制造方法
    • US20090115325A1
    • 2009-05-07
    • US12264942
    • 2008-11-05
    • Eiji MatsuzakiYoshinori IshiiSatoru Kase
    • Eiji MatsuzakiYoshinori IshiiSatoru Kase
    • H01J1/62H01J9/22
    • H01L51/5256H01L51/524H01L2251/5315
    • An organic EL element section (1000) is formed on a circuit formation section (102) formed on a circuit board (101). The organic EL element section (1000) is covered with a protective layer (113) including an SiNxOy film. The SiNxOy film has infrared absorption characteristics including: an Si—O—Si stretching vibration absorption peak appearing at energy lower than 1,000 cm−1; an absorption intensity of an Si—N stretching vibration absorption peak appearing in the vicinity of around 870 cm−1 which is 0.75 or more times an absorption intensity of the Si—O—Si stretching vibration absorption peak; and an absorption peak intensity in a range of 2,000 to 4,000 cm−1, which is 5% or less of the absorption intensity of the Si—N stretching vibration absorption peak. Thus, the protective film having an excellent moisture-blocking property may be obtained, and life property of an organic EL display device may be improved.
    • 有机EL元件部(1000)形成在电路基板(101)上形成的电路形成部(102)上。 有机EL元件部分(1000)被包括SiN x O y膜的保护层(113)覆盖。 SiN x O y膜具有红外吸收特性,包括:以低于1000cm -1的能量出现的Si-O-Si伸缩振动吸收峰; 在约870cm -1附近出现的Si-N伸缩振动吸收峰的吸收强度是Si-O-Si伸缩振动吸收峰的吸收强度的0.75倍以上; 以及在2,000〜4000cm -1的范围内的吸收峰强度,其为Si-N伸缩振动吸收峰的吸收强度的5%以下。 因此,可以获得具有优异的防湿性的保护膜,并且可以提高有机EL显示装置的寿命。