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    • 3. 发明授权
    • Power supply circuit
    • 电源电路
    • US09219362B2
    • 2015-12-22
    • US13008414
    • 2011-01-18
    • Shigeto KobayashiKouichi YamadaYoshitaka UedaAtsushi Wada
    • Shigeto KobayashiKouichi YamadaYoshitaka UedaAtsushi Wada
    • H02J1/10H02J1/08H03K19/0175G06F1/26H03L5/00
    • H02J1/08G06F1/26H03K19/0175H03L5/00Y10T307/50
    • A power supply circuit generates the internal power supply voltage intVCC from a first power supply capable of supplying a first power supply voltage V1 and a second power supply capable of supplying a second power supply voltage V2, which is lower than the first power supply voltage V1. A first transistor TR1 is provided between the first power supply and an output node, whereas a second transistor TR2 is provided between the second power supply and the output node. A first supply unit supplies the inverted value of an output voltage of the first power supply or the inverted value of a voltage corresponding to the output voltage of the first power supply, to the gate input of the first transistor TR1. A second supply unit supplies the output voltage of the first power supply or the voltage corresponding to the output voltage of the first power supply, to the gate input of the second transistor TR2.
    • 电源电路从能够提供第一电源电压V1的第一电源和能够提供低于第一电源电压V1的第二电源电压V2的第二电源产生内部电源电压intVCC 。 第一晶体管TR1设置在第一电源和输出节点之间,而第二晶体管TR2设置在第二电源和输出节点之间。 第一供电单元将第一电源的输出电压的反相值或与第一电源的输出电压对应的电压的反相值提供给第一晶体管TR1的栅极输入。 第二供应单元将第一电源的输出电压或与第一电源的输出电压相对应的电压提供给第二晶体管TR2的栅极输入。
    • 4. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20110186935A1
    • 2011-08-04
    • US13016481
    • 2011-01-28
    • Yoshitaka UEDAKouichi YamadaAtsushi WadaShigeto Kobayashi
    • Yoshitaka UEDAKouichi YamadaAtsushi WadaShigeto Kobayashi
    • H01L27/105
    • H01L27/105
    • A MOS transistor includes a gate electrode formed in a grid pattern, source regions and drain regions each surrounded by the gate electrode, and a source metal wiring connected to the source regions via source contacts and a drain metal wiring connected to the drain regions via drain contacts. The source metal wiring and the drain metal wiring are disposed along one direction of the grid of the gate electrode. Each of the source regions and the drain regions is a rectangular form having its long side along the length direction of each metal wiring. The source metal wiring and the drain metal wiring are each formed in a zigzag manner in the length direction and are respectively connected to the source contacts and the drain contacts.
    • MOS晶体管包括形成为栅格图案的栅极电极,由栅电极围绕的源极区域和漏极区域以及经由源极触点连接到源极区域的源极金属布线和经由漏极连接到漏极区域的漏极金属布线 联系人 源金属布线和漏极金属布线沿着栅电极的栅格的一个方向设置。 源极区域和漏极区域中的每一个是沿着每个金属布线的长度方向具有长边的矩形形状。 源极金属布线和漏极金属布线分别在长度方向上以锯齿形形式分别连接到源极触点和漏极触点。
    • 5. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08513716B2
    • 2013-08-20
    • US13016481
    • 2011-01-28
    • Yoshitaka UedaKouichi YamadaAtsushi WadaShigeto Kobayashi
    • Yoshitaka UedaKouichi YamadaAtsushi WadaShigeto Kobayashi
    • H01L29/78
    • H01L27/105
    • A MOS transistor includes a gate electrode formed in a grid pattern, source regions and drain regions each surrounded by the gate electrode, and a source metal wiring connected to the source regions via source contacts and a drain metal wiring connected to the drain regions via drain contacts. The source metal wiring and the drain metal wiring are disposed along one direction of the grid of the gate electrode. Each of the source regions and the drain regions is a rectangular form having its long side along the length direction of each metal wiring. The source metal wiring and the drain metal wiring are each formed in a zigzag manner in the length direction and are respectively connected to the source contacts and the drain contacts.
    • MOS晶体管包括形成为栅格图案的栅极电极,由栅电极围绕的源极区域和漏极区域以及经由源极触点连接到源极区域的源极金属布线和经由漏极连接到漏极区域的漏极金属布线 联系人 源金属布线和漏极金属布线沿着栅电极的栅格的一个方向设置。 源极区域和漏极区域中的每一个是沿着每个金属布线的长度方向具有长边的矩形形状。 源极金属布线和漏极金属布线分别在长度方向上以锯齿形形式分别连接到源极触点和漏极触点。
    • 6. 发明申请
    • POWER SUPPLY CIRCUIT
    • 电源电路
    • US20110175449A1
    • 2011-07-21
    • US13008414
    • 2011-01-18
    • Shigeto KOBAYASHIKouichi YamadaYoshitaka UedaAtsushi Wada
    • Shigeto KOBAYASHIKouichi YamadaYoshitaka UedaAtsushi Wada
    • H02J1/10
    • H02J1/08G06F1/26H03K19/0175H03L5/00Y10T307/50
    • A power supply circuit generates the internal power supply voltage intVCC from a first power supply capable of supplying a first power supply voltage V1 and a second power supply capable of supplying a second power supply voltage V2, which is lower than the first power supply voltage V1. A first transistor TR1 is provided between the first power supply and an output node, whereas a second transistor TR2 is provided between the second power supply and the output node. A first supply unit supplies the inverted value of an output voltage of the first power supply or the inverted value of a voltage corresponding to the output voltage of the first power supply, to the gate input of the first transistor TR1. A second supply unit supplies the output voltage of the first power supply or the voltage corresponding to the output voltage of the first power supply, to the gate input of the second transistor TR2.
    • 电源电路从能够提供第一电源电压V1的第一电源和能够提供低于第一电源电压V1的第二电源电压V2的第二电源产生内部电源电压intVCC 。 第一晶体管TR1设置在第一电源和输出节点之间,而第二晶体管TR2设置在第二电源和输出节点之间。 第一供电单元将第一电源的输出电压的反相值或与第一电源的输出电压对应的电压的反相值提供给第一晶体管TR1的栅极输入。 第二供应单元将第一电源的输出电压或与第一电源的输出电压相对应的电压提供给第二晶体管TR2的栅极输入。
    • 9. 发明授权
    • Sample measuring device and sample measuring system
    • 样品测量装置和样品测量系统
    • US08854206B2
    • 2014-10-07
    • US13458694
    • 2012-04-27
    • Akinori KaiAtsushi Wada
    • Akinori KaiAtsushi Wada
    • G08B1/08A61B5/00A61B5/145
    • A61B5/14532A61B5/0002G06F19/00G16H40/63
    • A sample measuring device according to the present invention includes a measuring unit for performing measurement with respect to a particular component contained in a sample, a measurement data storage unit for storing measurement data obtained by the measuring unit, a display unit for displaying the measurement data, a sensor strip detector for detecting insertion and removal of a sensor strip to which the sample is applied, and a first data transmitter/receiver for transmitting the measurement data via wireless communication. The first data transmitter/receiver performs initial authentication process for wireless communication after insertion of the sensor strip is detected by the sensor strip detector.
    • 根据本发明的样本测量装置包括:用于对包含在样本中的特定部件进行测量的测量单元,用于存储由测量单元获得的测量数据的测量数据存储单元,用于显示测量数据的显示单元 用于检测插入和移除其中应用样品的传感器条的传感器条检测器,以及用于经由无线通信发送测量数据的第一数据发送器/接收器。 传感器条检测器检测到传感器带插入后,第一个数据发送器/接收器执行无线通信的初始认证过程。