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1. 发明申请

US20170022050A1 HERMETIC ENCAPSULATION FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES 审中-公开
标题翻译：微电子系统（MEMS）器件的渗透性封装
公开(公告)号：US20170022050A1
公开(公告)日：2017-01-26
申请号：US15005826
申请日：2016-01-25
申请人： Sarah K. HANEY , Weng Hong TEH , Feras EID , Sasha N. OSTER
发明人： Sarah K. HANEY , Weng Hong TEH , Feras EID , Sasha N. OSTER
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0041 , B81B7/0032 , B81B2203/0315 , B81B2207/012 , B81B2207/07 , B81C1/00293 , B81C1/00539 , B81C2201/013 , B81C2203/0109 , B81C2203/0136 , B81C2203/0792
摘要： Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.
摘要翻译：本发明的实施例描述了用于MEMS器件的气密封装和用于创建气密封装结构的工艺。实施例包括进一步包括磁体的MEMS基板堆叠，第一层压有机介电膜，设置在磁体上的第一密封涂层，设置在密封涂层上的第二层压有机绝缘膜，设置在磁体上的MEMS器件层，以及围绕MEMS器件层的多个金属互连。密封板随后结合到MEMS衬底叠层并且设置在所形成的MEMS器件层上，以至少部分地形成围绕MEMS器件层的气密封装的腔体。在各种实施例中，气密封装的空腔进一步由第一密封涂层形成，并且该组金属互连中的至少一个或沉积在该组金属互连件上的第二密封涂层。

2. 发明申请

US20150291415A1 HERMETIC ENCAPSULATION FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES 有权
标题翻译：微电子系统（MEMS）器件的渗透性封装
公开(公告)号：US20150291415A1
公开(公告)日：2015-10-15
申请号：US14137538
申请日：2013-12-20
申请人： Sarah K. HANEY , Weng Hong TEH , Feras EID , Sasha N. OSTER
发明人： Sarah K. HANEY , Weng Hong TEH , Feras EID , Sasha N. OSTER
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0041 , B81B7/0032 , B81B2203/0315 , B81B2207/012 , B81B2207/07 , B81C1/00293 , B81C1/00539 , B81C2201/013 , B81C2203/0109 , B81C2203/0136 , B81C2203/0792
摘要： Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.
摘要翻译：本发明的实施例描述了用于MEMS器件的气密封装和用于创建气密封装结构的工艺。实施例包括进一步包括磁体的MEMS基板堆叠，第一层压有机介电膜，设置在磁体上的第一密封涂层，设置在密封涂层上的第二层压有机绝缘膜，设置在磁体上的MEMS器件层，以及围绕MEMS器件层的多个金属互连。密封板随后结合到MEMS衬底叠层并且设置在所形成的MEMS器件层上，以至少部分地形成围绕MEMS器件层的气密封装的腔体。在各种实施例中，气密封装的空腔进一步由第一密封涂层形成，并且该组金属互连中的至少一个或沉积在该组金属互连件上的第二密封涂层。

3. 发明申请

US20150183635A1 INTEGRATION OF PRESSURE OR INERTIAL SENSORS INTO INTEGRATED CIRCUIT FABRICATION AND PACKAGING 有权
标题翻译：将压力或惯性传感器集成到集成电路制造和包装
公开(公告)号：US20150183635A1
公开(公告)日：2015-07-02
申请号：US14141875
申请日：2013-12-27
申请人： Kyu Oh Lee , Sasha N. OSTER , Feras EID , Sarah HANEY
发明人： Kyu Oh Lee , Sasha N. OSTER , Feras EID , Sarah HANEY
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： G05D16/2026 , B81B3/0027 , B81B7/007 , B81B7/008 , B81B2201/025 , B81B2201/0264 , B81B2203/0127 , B81B2207/094 , B81C1/00158 , B81C1/00238 , B81C1/00246 , B81C1/00333 , B81C1/00547 , B81C2201/056 , B81C2203/0172 , B81C2203/0714 , B81C2203/0792
摘要： The integration of pressure or inertial sensors into an integrated circuit fabrication and packaging flow is described. In one example, a diaphragm is formed by depositing a metal over a first dielectric layer. A second dielectric layer is formed over the diaphragm. A metal mesh layer is formed over the second dielectric. The first dielectric layer is etched under the diaphragm to form a cavity. The cavity is lined with a sealing layer. The cavity is covered to form a chamber adjoining the diaphragm, and the cover is sealed against the cavity.
摘要翻译：描述了将压力或惯性传感器集成到集成电路制造和封装流程中。在一个示例中，通过在第一介电层上沉积金属来形成隔膜。在隔膜上形成第二电介质层。在第二电介质上形成金属网层。第一介电层在隔膜下蚀刻形成空腔。空腔内衬密封层。空腔被覆盖以形成邻近隔膜的室，并且盖被密封抵靠空腔。

4. 发明申请

US20140076051A1 ACCELEROMETER AND METHOD OF MAKING SAME 有权
标题翻译：加速度计及其制作方法
公开(公告)号：US20140076051A1
公开(公告)日：2014-03-20
申请号：US13618003
申请日：2012-09-14
申请人： Qing MA , Valluri RAO , Feras EID , Kevin LIN , Weng Hong TEH , Johanna SWAN , Robert SANKMAN
发明人： Qing MA , Valluri RAO , Feras EID , Kevin LIN , Weng Hong TEH , Johanna SWAN , Robert SANKMAN
IPC分类号： G01P15/097
CPC分类号： G01P15/097 , G01P15/105 , G01P15/18
摘要： An accelerometer includes a mass, suspended by a beam, and associated conductive paths. Each conductive path is subjected to a magnetic field, such that, when a time varying signal is applied to the conductive paths, a characteristic resonant frequency is produced, and when the mass experiences an acceleration, a respective change in the resonant frequency is produced that may be interpreted as acceleration data. Embodiments include methods of manufacturing an accelerometer and systems and devices incorporating the accelerometer.
摘要翻译：加速度计包括由梁悬挂的质量块和相关联的导电路径。每个导电路径受到磁场的影响，使得当对导电路径施加时变信号时，产生特性谐振频率，并且当质量经历加速度时，产生谐振频率的相应变化，可以解释为加速度数据。实施例包括制造加速度计的方法和结合有加速度计的系统和装置。

5. 发明申请

US20140165723A1 INDUCTIVE INERTIAL SENSOR ARCHITECTURE & FABRICATION IN PACKAGING BUILD-UP LAYERS 有权
标题翻译：感应式传感器结构与制造包装建筑层
公开(公告)号：US20140165723A1
公开(公告)日：2014-06-19
申请号：US13720876
申请日：2012-12-19
申请人： Qing MA , Feras EID , Kevin LIN , Johanna M. SWAN , Weng Hong TEH , Valluri R. RAO
发明人： Qing MA , Feras EID , Kevin LIN , Johanna M. SWAN , Weng Hong TEH , Valluri R. RAO
IPC分类号： G01C19/5635
CPC分类号： G01C19/56 , G01C19/5776
摘要： This invention relates to inductive inertial sensors employing a magnetic drive and/or sense architecture. In embodiments, translational gyroscopes utilize a conductive coil made to vibrate in a first dimension as a function of a time varying current driven through the coil in the presence of a magnetic field. Sense coils register an inductance that varies as a function of an angular velocity in a second dimension. In embodiments, the vibrating coil causes first and second mutual inductances in the sense coils to deviate from each other as a function of the angular velocity. In embodiments, self-inductances associated with a pair of meandering coils vary as a function of an angular velocity in a second dimension. In embodiments, package build-up layers are utilized to fabricate the inductive inertial sensors, enabling package-level integrated inertial sensing advantageous in small form factor computing platforms, such as mobile devices.
摘要翻译：本发明涉及采用磁驱动和/或感测架构的感应惯性传感器。在实施例中，平移陀螺仪利用在第一维度中制成的导电线圈作为在存在磁场的情况下驱动通过线圈的时变电流的函数。感应线圈记录在第二维度上作为角速度的函数变化的电感。在实施例中，振动线圈使得感测线圈中的第一和第二互感器作为角速度的函数彼此偏离。在实施例中，与一对曲折线圈相关联的自感量作为第二维度中的角速度的函数而变化。在实施例中，使用封装积层来制造感应惯性传感器，使得能够在诸如移动设备的小尺寸计算平台中有利的封装级集成惯性感测。

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