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    • 5. 发明申请
    • OPTIMIZED CONTEXT DROP FOR A SOLID STATE DRIVE (SSD)
    • 用于固态驱动(SSD)的优化上下文
    • US20140006683A1
    • 2014-01-02
    • US13537377
    • 2012-06-29
    • Prasun RatnSuhas NayakSanjeev N. Trika
    • Prasun RatnSuhas NayakSanjeev N. Trika
    • G06F12/02
    • G06F11/1446G06F11/1441G06F12/1009Y02D10/13
    • A mass storage system employs a paging table for memory page redirection and maintains the paging table for power loss recovery (PLR) using a FIFO queue of paging table (L2P) segments to be written to non-volatile memory. The FIFO queue identifies a sequence of the L2P segments in conjunction with sequence number and marking data of the affected segments for recreating the paging table. Upon power failure, a power loss recovery (PLR) mechanism scans for the last segment written based on the FIFO queue. The PLR process recovers unwritten paging table entries by replaying the corresponding changes in the order defined by the sequence numbers. The recovery process continues for each sequence number in the current context, until the L2P information in the paging table is recreated to the point just prior to power loss.
    • 大容量存储系统采用用于存储器页面重定向的寻呼表,并且使用寻呼表(L2P)段的FIFO队列来维护用于功率损耗恢复的寻呼表(PLR),以将其写入非易失性存储器。 FIFO队列结合序列号识别L2P段的序列,并且识别受影响段的标记数据,以重新创建寻呼表。 断电时,功率损耗恢复(PLR)机制扫描基于FIFO队列写入的最后一个段。 PLR进程通过重播按序列号定义的顺序的相应更改来恢复未写入的分页表条目。 对于当前上下文中的每个序列号,恢复过程将继续进行,直到寻呼表中的L2P信息被重新创建到掉电之前。
    • 8. 发明申请
    • SYSTEMS AND METHODS FOR FAST STATE MODIFICATION OF AT LEAST A PORTION OF NON-VOLATILE MEMORY
    • 至少一个非易失性存储器部分进行快速状态修改的系统和方法
    • US20090172280A1
    • 2009-07-02
    • US11966826
    • 2007-12-28
    • Sanjeev N. TrikaDebra HensgenHan H. ChauMichael Johnston
    • Sanjeev N. TrikaDebra HensgenHan H. ChauMichael Johnston
    • G06F12/00
    • G06F12/0246G06F2212/7207G06F2212/7211
    • A method is provided for reducing the number of writes in a non-volatile memory (122). The method involves writing data in the non-volatile memory and determining a set of data from the data in the non-volatile memory to be written to a removable memory (126) that is operatively coupled to the non-volatile memory (e.g., a NAND memory). The method also involves writing the set of data to the removable memory (e.g., a hard disk) from the non-volatile memory. The method further involves writing a delineation marker (e.g., a sequence number) to the non-volatile memory specifying that the set of data has been written to the removable memory. Notably, the metadata of the data in the non-volatile memory comprises at least one marker set as a specific marker type (e.g., a valid marker and a dirty marker).
    • 提供了一种用于减少非易失性存储器(122)中的写入数量的方法。 该方法涉及在非易失性存储器中写入数据并且从非易失性存储器中的数据确定一组数据以写入可操作地耦合到非易失性存储器的可移除存储器(126),例如, NAND存储器)。 该方法还涉及从非易失性存储器将该组数据写入可移动存储器(例如,硬盘)。 该方法还包括将描述标记(例如,序列号)写入非易失性存储器,指定该数据集已被写入可移动存储器。 值得注意的是,非易失性存储器中的数据的元数据包括设置为特定标记类型的至少一个标记(例如,有效标记和脏标记)。