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1. 发明授权

US06444381B1 Electron beam flood exposure technique to reduce the carbon contamination 有权
标题翻译：电子束泛滥技术减少碳污染
公开(公告)号：US06444381B1
公开(公告)日：2002-09-03
申请号：US09729295
申请日：2000-12-04
申请人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
发明人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
IPC分类号： G03F900
CPC分类号： G03F1/74 , Y10S430/143
摘要： One aspect of the present invention relates to a method for reducing carbon contamination on a mask involving placing a mask plate having carbon-containing contaminants thereon in a processing chamber; simultaneously contacting the mask plate with oxygen and exposing the mask plate with a flood exposure of electron beams wherein the carbon-containing contaminants are converted to a by-product; and removing the by-product from the processing chamber.
摘要翻译：本发明的一个方面涉及一种用于减少掩模上的碳污染的方法，其涉及将具有含碳污染物的掩模板放置在处理室中; 同时使掩模板与氧气接触，并将电子束的暴露暴露于掩模板，其中含碳污染物转化为副产物; 并从处理室中除去副产物。

2. 发明授权

US06541184B1 Nozzle arm movement for resist development 有权
标题翻译：喷嘴臂运动用于抗蚀剂开发
公开(公告)号：US06541184B1
公开(公告)日：2003-04-01
申请号：US09655979
申请日：2000-09-06
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
IPC分类号： G03C556
CPC分类号： H01L21/6715 , G03F7/3028
摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.
摘要翻译：提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。该系统包括多个尖端喷嘴和运动系统，该运动系统将喷嘴移动到位于基板上的光致抗蚀剂材料层的中心区域上方的操作位置，并且当喷嘴扫描移动穿过预定路径时施加一定体积的显影剂。移动系统通过提供具有第一臂构件的臂来移动喷嘴，该臂具有可围绕第一旋转轴线枢转的第一臂构件和可围绕第二旋转轴线枢转或可沿着平移轴线移动的第二臂构件。该系统还提供了测量设置在测试晶片上的显影的光致抗蚀剂材料层的厚度均匀性的测量系统。当施加显影剂时，厚度均匀性数据用于重新配置喷嘴的预定路径。厚度均匀性数据也可用于调节沿路径施加的显影剂的体积和/或体积流量。

3. 发明授权

US06451512B1 UV-enhanced silylation process to increase etch resistance of ultra thin resists 失效
标题翻译： UV增强的硅烷化方法，以增加超薄抗蚀剂的耐蚀刻性
公开(公告)号：US06451512B1
公开(公告)日：2002-09-17
申请号：US09565691
申请日：2000-05-01
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G03F700
CPC分类号： G03F7/265 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 Å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.
摘要翻译：在一个实施方案中，本发明涉及一种处理超薄抗蚀剂的方法，包括以下步骤：在半导体衬底上沉积超薄光致抗蚀剂，超薄抗蚀剂的厚度小于约; 用波长约250nm或更小的电磁辐射照射超薄抗蚀剂; 开发超薄抗蚀剂; 以及在紫外光和臭氧中的至少一种的环境下使超薄抗蚀剂与含硅化合物接触，其中超薄抗蚀剂与含硅化合物的接触在照射和显影超薄抗蚀剂之间进行，或在开发超薄抗蚀剂后。

4. 发明授权

US06248175B1 Nozzle arm movement for resist development 有权
标题翻译：喷嘴臂运动用于抗蚀剂开发
公开(公告)号：US06248175B1
公开(公告)日：2001-06-19
申请号：US09430001
申请日：1999-10-29
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
IPC分类号： B05C1100
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position. A method of adjusting the offset position and/or volume of developer material applied at the first and second position is also provided. The method utilizes developed photoresist material layer thickness data provided by a measurement system to adjust the offset position and/or volume of the developer.
摘要翻译：提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。该系统包括适于沿着具有大致等于光致抗蚀剂材料层的直径的直线路径的光致抗蚀剂材料层上施加预定体积的显影剂材料的喷嘴。移动系统将喷嘴移动到偏离光致抗蚀剂材料层的中心区域的第一位置，以在旋转涂覆显影剂材料的同时将第一预定体积的显影剂材料施加到光致抗蚀剂材料层。移动系统还将喷嘴移动到偏离中心区域的第二位置，以在显影剂被旋涂时施加第二预定体积的显影剂材料到光致抗蚀剂材料层。第一位置相对于第二位置位于中心区域的相反侧。还提供了一种调节在第一和第二位置施加的显影剂材料的偏移位置和/或体积的方法。该方法利用由测量系统提供的显影的光致抗蚀剂材料层厚度数据来调节显影剂的偏移位置和/或体积。

5. 发明授权

US06423479B1 Cleaning carbon contamination on mask using gaseous phase 失效
标题翻译：使用气相清洁面罩上的碳污染
公开(公告)号：US06423479B1
公开(公告)日：2002-07-23
申请号：US09495165
申请日：2000-01-31
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G03F726
CPC分类号： G03F1/82
摘要： In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithography mask contains carbon contaminants; and contacting the lithography mask with sulfur trioxide thereby reducing the carbon contaminants thereon.
摘要翻译：在一个实施例中，本发明涉及一种处理光刻掩模的方法，包括以下步骤：将具有光化辐射的光刻基底通过室中的光刻掩模曝光; 从所述腔室去除所述光刻掩模，其中所述光刻掩模含有碳污染物; 并使光刻掩模与三氧化硫接触，从而减少其上的碳污染物。

6. 发明授权

US06371134B1 Ozone cleaning of wafers 有权
公开(公告)号：US06371134B1
公开(公告)日：2002-04-16
申请号：US09495014
申请日：2000-01-31
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： B08B700
摘要： In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of carbon containing resist debris remain on the semiconductor structure; and contacting the semiconductor structure with ozone thereby reducing the amount of carbon containing resist debris thereon.

7. 发明授权

US06813574B1 Topographically aligned layers and method for adjusting the relative alignment of layers and apparatus therefor 有权
标题翻译：用于调整层的相对对准的方法和用于其的设备的方法
公开(公告)号：US06813574B1
公开(公告)日：2004-11-02
申请号：US09992599
申请日：2001-11-06
申请人： Sanjay K. Yedur , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Sanjay K. Yedur , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01N2186
CPC分类号： H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Patterned layers in an integrated circuit (IC) or other device are aligned in conjunction with the detection of the topology of the layers. The topology can be used to determine the location of a metrology mark and/or to compensate for a horizontal shift in the apparent location of the metrology mark. Precise detection of topography can be achieved without physical contact with the IC or other device with an atomic force microscope.
摘要翻译：集成电路（IC）或其他设备中的图案层与层的拓扑结构的检测结合对齐。拓扑结构可用于确定计量标记的位置和/或补偿计量标记的表观位置的水平位移。无需使用原子力显微镜与IC或其他器件物理接触即可实现精确的形貌检测。

8. 发明授权

US06605855B1 CVD plasma process to fill contact hole in damascene process 有权
标题翻译： CVD等离子体工艺在镶嵌工艺中填充接触孔
公开(公告)号：US06605855B1
公开(公告)日：2003-08-12
申请号：US09650538
申请日：2000-08-30
申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Christopher F. Lyons , Sanjay K. Yedur , Ramkumar Subramanian
发明人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Christopher F. Lyons , Sanjay K. Yedur , Ramkumar Subramanian
IPC分类号： H01L2900
CPC分类号： H01L21/76808 , H01L21/31144 , H01L21/312 , H01L21/76831 , H01L2221/1063
摘要： The present invention relates to a method for fabricating interconnecting lines and vias in a layer of insulating material. A via is formed in the layer of insulating material. A protective material is formed so as to be conformal to at least edges and sidewalls of the via, the protective material facilitating shielding of at least the edges and sidewalls of the via from a trench etch step. The trench etch step is performed to form a trench opening in the insulating material. The via and trench are filled with a conductive metal.
摘要翻译：本发明涉及在绝缘材料层中制造互连线和通孔的方法。在绝缘材料层中形成通孔。形成保护材料以至少与通孔的边缘和侧壁共形，所述保护材料有助于屏蔽通孔的至少边缘和侧壁至沟槽蚀刻步骤。执行沟槽蚀刻步骤以在绝缘材料中形成沟槽开口。通孔和沟槽填充有导电金属。

9. 发明授权

US06459482B1 Grainless material for calibration sample 失效
标题翻译：用于校准样品的粗糙材料
公开(公告)号：US06459482B1
公开(公告)日：2002-10-01
申请号：US09729294
申请日：2000-12-04
申请人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
发明人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G01J110
CPC分类号： H01J37/28 , H01J2237/2826
摘要： The present invention provides SEM systems, SEM calibration standards, and SEM calibration methods that improved accuracy in critical dimension measurements. The calibration standards have features formed with an amorphous material such as amorphous silicon. Amorphous materials lack the crystal grain structure of materials such as polysilicon and are capable of providing sharper edged features and higher accuracy patterns than grained materials. The amorphous material can be bound to a silicon wafer substrate through an intermediate layer of material, such as silicon dioxide. Where the intermediate layer is insulating material, as is silicon dioxide, the intermediate layer may be patterned with gaps to provide for electrical communication between the amorphous silicon and the silicon wafer. Charges imparted to the amorphous silicon during electron beam scanning may thereby drain to the silicon wafer rather than accumulating to a level where they would distort the electron beam.
摘要翻译：本发明提供SEM系统，SEM校准标准和SEM校准方法，提高了临界尺寸测量的精度。校准标准品具有非晶体材料如非晶硅形成的特征。无定形材料缺乏诸如多晶硅的材料的晶粒结构，并且能够提供比颗粒材料更尖锐的边缘特征和更高精度的图案。非晶材料可以通过诸如二氧化硅的材料的中间层与硅晶片衬底结合。在中间层是绝缘材料的情况下，如二氧化硅那样，中间层可以用间隙图案化以提供非晶硅和硅晶片之间的电连通。因此，在电子束扫描期间赋予非晶硅的电荷可以从而被排出到硅晶片，而不是积聚到它们会使电子束变形的水平。

10. 发明授权

US06326231B1 Use of silicon oxynitride ARC for metal layers 有权
标题翻译：氧氮化硅ARC用于金属层
公开(公告)号：US06326231B1
公开(公告)日：2001-12-04
申请号：US09207562
申请日：1998-12-08
申请人： Ramkumar Subramanian , Bhanwar Singh , Sanjay K. Yedur , Marina V. Plat , Christopher F. Lyons , Bharath Rangarajan , Michael K. Templeton
发明人： Ramkumar Subramanian , Bhanwar Singh , Sanjay K. Yedur , Marina V. Plat , Christopher F. Lyons , Bharath Rangarajan , Michael K. Templeton
IPC分类号： H01L2100
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/3143 , H01L21/3145
摘要： In one embodiment, the present invention relates to a method of forming a silicon oxynitride antireflection coating over a metal layer, involving the steps of providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a silicon oxynitride layer over the metal layer having a thickness from about 100 Å to about 150 Å; and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating. In another embodiment, the present invention relates to a method of reducing an apparent reflectivity of a metal layer having a first reflectivity in a semiconductor structure, involing forming a silicon oxynitride antireflection coating over the metal layer; wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer over the oxynitride, and the difference between the first reflectivity and the second reflectivity is at least about 60%.
摘要翻译：在一个实施方案中，本发明涉及在金属层上形成氮氧化硅抗反射涂层的方法，包括以下步骤：在半导体衬底的至少一部分上提供包括金属层的半导体衬底; 在所述金属层上沉积厚度为约至约的氧氮化硅层; 并在氮氧化硅层上形成厚度约为5-20埃的氧化物层，以提供氮氧化硅抗反射涂层。在另一个实施方案中，本发明涉及一种在半导体结构中减少具有第一反射率的金属层的表观反射率的方法，包括在金属层上形成氮氧化硅抗反射涂层; 其中形成在所述金属层上的所述氧氮化硅抗反射涂层具有第二反射率，并且通过化学气相沉积在所述金属层上沉积氧氮化硅并在所述氧氮化物上形成氧化物层，并且所述第一反射率和所述第二反射率之间的差异至少约60％。

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