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1. 发明授权

US06444381B1 Electron beam flood exposure technique to reduce the carbon contamination 有权
标题翻译：电子束泛滥技术减少碳污染
公开(公告)号：US06444381B1
公开(公告)日：2002-09-03
申请号：US09729295
申请日：2000-12-04
申请人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
发明人： Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton , Bharath Rangarajan , Khoi A. Phan , Bryan K. Choo , Sanjay K. Yedur
IPC分类号： G03F900
CPC分类号： G03F1/74 , Y10S430/143
摘要： One aspect of the present invention relates to a method for reducing carbon contamination on a mask involving placing a mask plate having carbon-containing contaminants thereon in a processing chamber; simultaneously contacting the mask plate with oxygen and exposing the mask plate with a flood exposure of electron beams wherein the carbon-containing contaminants are converted to a by-product; and removing the by-product from the processing chamber.
摘要翻译：本发明的一个方面涉及一种用于减少掩模上的碳污染的方法，其涉及将具有含碳污染物的掩模板放置在处理室中; 同时使掩模板与氧气接触，并将电子束的暴露暴露于掩模板，其中含碳污染物转化为副产物; 并从处理室中除去副产物。

2. 发明授权

US06441349B1 System for facilitating uniform heating temperature of photoresist 失效
标题翻译：用于促进光刻胶均匀加热温度的系统
公开(公告)号：US06441349B1
公开(公告)日：2002-08-27
申请号：US09558643
申请日：2000-04-26
申请人： Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur
发明人： Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur
IPC分类号： H05B368
CPC分类号： H01L21/67103
摘要： A system and method for facilitating uniform heating temperature of a material is provided. The material may be a photoresist, a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material. The system can include at least one heating element and a heat transfer fluid, the heating element heating the heat transfer fluid, which in turn heats the material. The transfer fluid more evenly distributes the heat from the heating element, which can have hot and cold spots at the material.
摘要翻译：提供了一种用于促进材料的均匀加热温度的系统和方法。该材料可以是光致抗蚀剂，顶部或底部抗反射涂层，低K电介质材料，SOG或其它旋涂材料。该系统可以包括至少一个加热元件和传热流体，该加热元件加热该传热流体，该热传导流体依次加热该材料。传输流体更均匀地分配来自加热元件的热量，其可以在材料上具有热点和冷点。

3. 发明授权

US06245493B1 Method for reducing surface reflectivity by increasing surface roughness 有权
标题翻译：通过增加表面粗糙度来降低表面反射率的方法
公开(公告)号：US06245493B1
公开(公告)日：2001-06-12
申请号：US09205738
申请日：1998-12-04
申请人： Bhanwar Singh , Bharath Rangarajan , Sanjay K. Yedur , Michael K. Templeton , Christopher F. Lyons
发明人： Bhanwar Singh , Bharath Rangarajan , Sanjay K. Yedur , Michael K. Templeton , Christopher F. Lyons
IPC分类号： G03F700
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/16 , H01L21/3105
摘要： A method for creating a roughened surface on a material exposed to light during a photolithographic process is provided. The roughened surface is created on a surface of the material via a plasma etch process. The roughened surface diffuses light incident to the material such that the diffused light causes insubstantial damage to a photoresist subsequently formed on the material.
摘要翻译：提供了一种在光刻过程中在暴露于光的材料上产生粗糙表面的方法。通过等离子体蚀刻工艺在材料的表面上形成粗糙表面。粗糙表面扩散入射到材料的光，使得漫射的光对随后在材料上形成的光致抗蚀剂造成非实质的损坏。

4. 发明授权

US06541184B1 Nozzle arm movement for resist development 有权
标题翻译：喷嘴臂运动用于抗蚀剂开发
公开(公告)号：US06541184B1
公开(公告)日：2003-04-01
申请号：US09655979
申请日：2000-09-06
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
IPC分类号： G03C556
CPC分类号： H01L21/6715 , G03F7/3028
摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.
摘要翻译：提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。该系统包括多个尖端喷嘴和运动系统，该运动系统将喷嘴移动到位于基板上的光致抗蚀剂材料层的中心区域上方的操作位置，并且当喷嘴扫描移动穿过预定路径时施加一定体积的显影剂。移动系统通过提供具有第一臂构件的臂来移动喷嘴，该臂具有可围绕第一旋转轴线枢转的第一臂构件和可围绕第二旋转轴线枢转或可沿着平移轴线移动的第二臂构件。该系统还提供了测量设置在测试晶片上的显影的光致抗蚀剂材料层的厚度均匀性的测量系统。当施加显影剂时，厚度均匀性数据用于重新配置喷嘴的预定路径。厚度均匀性数据也可用于调节沿路径施加的显影剂的体积和/或体积流量。

5. 发明授权

US06451512B1 UV-enhanced silylation process to increase etch resistance of ultra thin resists 失效
标题翻译： UV增强的硅烷化方法，以增加超薄抗蚀剂的耐蚀刻性
公开(公告)号：US06451512B1
公开(公告)日：2002-09-17
申请号：US09565691
申请日：2000-05-01
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G03F700
CPC分类号： G03F7/265 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 Å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.
摘要翻译：在一个实施方案中，本发明涉及一种处理超薄抗蚀剂的方法，包括以下步骤：在半导体衬底上沉积超薄光致抗蚀剂，超薄抗蚀剂的厚度小于约; 用波长约250nm或更小的电磁辐射照射超薄抗蚀剂; 开发超薄抗蚀剂; 以及在紫外光和臭氧中的至少一种的环境下使超薄抗蚀剂与含硅化合物接触，其中超薄抗蚀剂与含硅化合物的接触在照射和显影超薄抗蚀剂之间进行，或在开发超薄抗蚀剂后。

6. 发明授权

US06248175B1 Nozzle arm movement for resist development 有权
标题翻译：喷嘴臂运动用于抗蚀剂开发
公开(公告)号：US06248175B1
公开(公告)日：2001-06-19
申请号：US09430001
申请日：1999-10-29
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
IPC分类号： B05C1100
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position. A method of adjusting the offset position and/or volume of developer material applied at the first and second position is also provided. The method utilizes developed photoresist material layer thickness data provided by a measurement system to adjust the offset position and/or volume of the developer.
摘要翻译：提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。该系统包括适于沿着具有大致等于光致抗蚀剂材料层的直径的直线路径的光致抗蚀剂材料层上施加预定体积的显影剂材料的喷嘴。移动系统将喷嘴移动到偏离光致抗蚀剂材料层的中心区域的第一位置，以在旋转涂覆显影剂材料的同时将第一预定体积的显影剂材料施加到光致抗蚀剂材料层。移动系统还将喷嘴移动到偏离中心区域的第二位置，以在显影剂被旋涂时施加第二预定体积的显影剂材料到光致抗蚀剂材料层。第一位置相对于第二位置位于中心区域的相反侧。还提供了一种调节在第一和第二位置施加的显影剂材料的偏移位置和/或体积的方法。该方法利用由测量系统提供的显影的光致抗蚀剂材料层厚度数据来调节显影剂的偏移位置和/或体积。

7. 发明授权

US6057914A Method for detecting and identifying a lens aberration by measurement of sidewall angles by atomic force microscopy 失效
标题翻译：通过原子力显微镜测量侧壁角度来检测和识别透镜像差的方法
公开(公告)号：US6057914A
公开(公告)日：2000-05-02
申请号：US289519
申请日：1999-04-09
申请人： Sanjay K. Yedur , Bhanwar Singh , Bharath Rangarajan
发明人： Sanjay K. Yedur , Bhanwar Singh , Bharath Rangarajan
IPC分类号： G01M11/02 , G01Q60/00 , G03F7/20 , G01B9/00
CPC分类号： G01Q60/38 , B82Y35/00 , G01M11/025 , G01Q30/04 , G03F7/706 , Y10S977/854
摘要： The present invention provides a method of detecting a lens aberration in a semiconductor production process, comprising the steps of:forming a feature on a substrate by a process including a step of exposing a radiation-sensitive material to radiation, wherein said radiation passes through a lens;obtaining data relating to a sidewall angle at a plurality of adjacent locations of said feature by scanning at least one surface of said feature with an atomic force microscope;calculating the sidewall angle at said plurality of adjacent locations of said feature based on the data obtained by the atomic force microscope;comparing the sidewall angle obtained from the calculation step to a design sidewall angle for a lens free of aberration, thereby detecting the lens aberration when the comparison reveals a substantial difference between the calculated side wall angle and the design sidewall angle; andidentifying a lens position of the lens aberration by extrapolating from the locations of said feature having said substantial difference.
摘要翻译：本发明提供了一种检测半导体制造工艺中的透镜像差的方法，包括以下步骤：通过包括将辐射敏感材料暴露于辐射的步骤的工艺在衬底上形成特征，其中所述辐射通过镜片; 通过用原子力显微镜扫描所述特征的至少一个表面来获得与所述特征的多个相邻位置处的侧壁角相关的数据; 基于由原子力显微镜获得的数据计算所述特征的所述多个相邻位置处的侧壁角度; 将从计算步骤获得的侧壁角度与没有像差的透镜的设计侧壁角度进行比较，从而当比较显示所计算的侧壁角度和设计侧壁角度之间的实质差异时，检测透镜像差; 以及通过从具有所述实质差异的所述特征的位置外推来识别透镜像差的透镜位置。

8. 发明授权

US06545273B1 Use of multiple tips on AFM to deconvolve tip effects 有权
标题翻译：在AFM上使用多个提示来解压缩尖端效应
公开(公告)号：US06545273B1
公开(公告)日：2003-04-08
申请号：US09729292
申请日：2000-12-04
申请人： Bhanwar Singh , Bharath Rangarajan , Sanjay K. Yedur
发明人： Bhanwar Singh , Bharath Rangarajan , Sanjay K. Yedur
IPC分类号： G01N2300
CPC分类号： G01Q40/00 , Y10S977/874
摘要： The present invention comprises a system for deconvolving tip effects associated with scanning tips in scanning probe microscopes and other scanning systems. The system comprises a scanning system operable to scan a feature or artifact with multiple, different type scanning tips and generate scan data associated therewith and a processor operably coupled to the scanning system. The processor is adapted to determine characteristics associated with the multiple, different type scanning tips using the scan data associated therewith. The present invention also comprises a method of determining scanning probe microscope tip effects. The method comprises the steps of scanning a feature or artifact with a plurality of different type scanning tips, resulting in a plurality of scan data sets associated with the different type scanning tips. The tip effects associated with the different type scanning tips are then deconvolved using the plurality of scan data sets.
摘要翻译：本发明包括一种用于在扫描探针显微镜和其它扫描系统中与扫描尖端相关联的尖端效应的去卷积的系统。该系统包括扫描系统，其可操作以用多个不同类型的扫描尖端扫描特征或伪像，并且生成与其相关联的扫描数据和可操作地耦合到扫描系统的处理器。处理器适于使用与其相关联的扫描数据来确定与多个不同类型扫描尖端相关联的特性。本发明还包括确定扫描探针显微镜尖端效应的方法。该方法包括以多个不同类型扫描尖端扫描特征或伪影的步骤，导致与不同类型的扫描尖端相关联的多个扫描数据集。然后使用多个扫描数据集对与不同类型的扫描尖端相关联的尖端效应进行去卷积。

9. 发明授权

US06423479B1 Cleaning carbon contamination on mask using gaseous phase 失效
标题翻译：使用气相清洁面罩上的碳污染
公开(公告)号：US06423479B1
公开(公告)日：2002-07-23
申请号：US09495165
申请日：2000-01-31
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G03F726
CPC分类号： G03F1/82
摘要： In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithography mask contains carbon contaminants; and contacting the lithography mask with sulfur trioxide thereby reducing the carbon contaminants thereon.
摘要翻译：在一个实施例中，本发明涉及一种处理光刻掩模的方法，包括以下步骤：将具有光化辐射的光刻基底通过室中的光刻掩模曝光; 从所述腔室去除所述光刻掩模，其中所述光刻掩模含有碳污染物; 并使光刻掩模与三氧化硫接触，从而减少其上的碳污染物。

10. 发明授权

US06376013B1 Multiple nozzles for dispensing resist 有权
标题翻译：用于分配抗蚀剂的多个喷嘴
公开(公告)号：US06376013B1
公开(公告)日：2002-04-23
申请号：US09413143
申请日：1999-10-06
申请人： Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Michael K. Templeton
发明人： Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Michael K. Templeton
IPC分类号： B05D100
CPC分类号： H01L21/6715 , B05B7/0408 , B05C11/02 , B05C11/08 , G03F7/162
摘要： A system and method is provided that facilitates the application of a uniform layer of photoresist material spincoated onto a semiconductor substrate (e.g wafer). The present invention accomplishes this end by utilizing a measurement system that measures the thickness uniformity of the photoresist material applied on a test wafer by a nozzle, and then adjusting the viscosity of the photoresist material by varying the ratio in a solvent/resist mixture, and/or adjusting the temperature of the mixture. A system and method that employs a plurality of nozzles is also provided that disperses resist at different annular regions on a wafer to facilitate the application of a uniform layer of photoresist material spincoated onto the wafer. The system and method utilize a measurement system that measures the thickness and thickness uniformity of each layer of photoresist material applied at each annular region of the wafer. The measured thickness uniformity and overall thickness for each annular region is then used to adjust the volume and viscosity of a solvent/resist mixture applied through each nozzle.
摘要翻译：提供了一种系统和方法，其有利于将均匀的光致抗蚀剂材料层涂覆在半导体衬底（例如晶片）上。本发明通过利用测量系统来实现这一目的，测量系统通过喷嘴测量施加在测试晶片上的光致抗蚀剂材料的厚度均匀性，然后通过改变溶剂/抗蚀剂混合物中的比例来调节光致抗蚀剂材料的粘度，以及 /或调整混合物的温度。还提供了使用多个喷嘴的系统和方法，其将抗蚀剂分散在晶片上的不同环形区域，以便于将均匀的光致抗蚀剂材料层涂覆在晶片上。该系统和方法利用测量系统，其测量在晶片的每个环形区域施加的每层光致抗蚀剂材料的厚度和厚度均匀性。然后使用测量的每个环形区域的厚度均匀性和总厚度来调节通过每个喷嘴施加的溶剂/抗蚀剂混合物的体积和粘度。

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