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1. 发明授权

US06126749A Apparatus for manufacturing reaction bonded silicon carbide 失效
标题翻译：用于制造反应结合碳化硅的装置
公开(公告)号：US06126749A
公开(公告)日：2000-10-03
申请号：US54819
申请日：1998-04-03
申请人： Sang-Whan Park , Huesup Song , Sang-Dong Kim , Jo-Woong Ha
发明人： Sang-Whan Park , Huesup Song , Sang-Dong Kim , Jo-Woong Ha
IPC分类号： B22F3/00 , C04B35/573 , C04B41/45 , C04B41/81 , C23C2/00 , B05C11/02
CPC分类号： C04B41/009 , C04B35/573 , C04B41/4523 , C04B41/81 , C23C2/006
摘要： A method and an apparatus for manufacturing a reaction bonded silicon carbide by the infiltration of molten metal by using a porous silicon carbide/carbon or carbon preform in which the molten metal is supplied to the carbon preform by capillary action through a pyro-carbon coated dense graphite feeder on which a transfer path of molten metal is defined from a molten metal supplier under an inert atmosphere, and a carbon woven fabric on which the carbon preform is placed transfers continuously the carbon preform at a constant speed and thereby infiltrates the carbon preform.The apparatus and method for manufacturing a reaction bonded silicon carbide which enable mass production of goods of various sizes and characteristics by continuously transferring the carbon preform on the carbon woven fabric and supplying the molten metal through the pyro-carbon coated graphite feeder.
摘要翻译：一种用于通过使用多孔碳化硅/碳或碳预型体渗入熔融金属来制造反应结合的碳化硅的方法和装置，其中通过毛细管作用将熔融金属通过热碳涂覆的密集在惰性气氛下从熔融金属供应商确定熔融金属传送路径的石墨供料器，其上放置有碳预制件的碳织物以恒定的速度连续地转移到碳预制件上，从而渗透碳预制件。用于制造反应接合的碳化硅的装置和方法，其能够通过将碳预制件连续地转移到碳织物上并通过热碳涂布的石墨进料器供应熔融金属，从而批量生产各种尺寸和特性的商品。

2. 发明授权

US5770262A Method for continuous manufacture of reaction bonded silicon carbide 失效
标题翻译：连续制造反应粘结碳化硅的方法
公开(公告)号：US5770262A
公开(公告)日：1998-06-23
申请号：US652324
申请日：1996-05-22
申请人： Sang-Whan Park , Huesup Song , Sang-Dong Kim , Jo-Woong Ha
发明人： Sang-Whan Park , Huesup Song , Sang-Dong Kim , Jo-Woong Ha
IPC分类号： B22F3/00 , C04B35/573 , C04B41/45 , C04B41/81 , C23C2/00 , B05D3/00
CPC分类号： C04B41/009 , C04B35/573 , C04B41/4523 , C04B41/81 , C23C2/006
摘要： A method and an apparatus for manufacturing a reaction bonded silicon carbide by the infiltration of molten metal by using a porous silicon carbide/carbon or carbon preform in which the molten metal is supplied to the carbon preform by capillary action through a pyro-carbon coated dense graphite feeder on which a transfer path of molten metal is defined from a molten metal supplier under an inert atmosphere, and a carbon woven fabric on which the carbon preform is placed transfers continuously the carbon preform at a constant speed and thereby infiltrates the carbon preform. The apparatus and method for manufacturing a reaction bonded silicon carbide which enable mass production of goods of various sizes and characteristics by continuously transferring the carbon preform on the carbon woven fabric and supplying the molten metal through the pyro-carbon coated graphite feeder.
摘要翻译：一种用于通过使用多孔碳化硅/碳或碳预型体渗入熔融金属来制造反应结合的碳化硅的方法和装置，其中通过毛细管作用将熔融金属通过热碳涂覆的密集在惰性气氛下从熔融金属供应商确定熔融金属传送路径的石墨供料器，其上放置有碳预制件的碳织物以恒定的速度连续地转移到碳预制件上，从而渗透碳预制件。用于制造反应接合的碳化硅的装置和方法，其能够通过将碳预制件连续地转移到碳织物上并通过热碳涂布的石墨进料器供应熔融金属，从而批量生产各种尺寸和特性的商品。

3. 发明授权

US06993828B2 Method for manufacturing metal thin film resistor 失效
标题翻译：制造金属薄膜电阻的方法
公开(公告)号：US06993828B2
公开(公告)日：2006-02-07
申请号：US10468725
申请日：2002-02-22
申请人： Jo-Woong Ha , Seung-Hyun Kim , Dong-Yeon Park , Dong-Su Lee , Hyun-Jung Woo
发明人： Jo-Woong Ha , Seung-Hyun Kim , Dong-Yeon Park , Dong-Su Lee , Hyun-Jung Woo
IPC分类号： H01C17/06
CPC分类号： H01C17/003 , H01C17/288 , Y10T29/49082 , Y10T29/49099 , Y10T29/49101 , Y10T29/49103
摘要： A metal resistor and a method for manufacturing the resistor are provided. A first insulation film is formed on a substrate, a photosensitive film is applied on the insulation film, and an insulation film pattern is formed by patterning the insulation film. After a metal thin film is formed among the insulation film pattern and on the photosensitive film, with removing the photo-sensitive film is a metal thin film pattern formed among the insulation film pattern. On the metal thin film pattern and the insulation film pattern is a second insulation film formed and at the pad region of the metal thin film pattern is a lead wire connected, after that, a metal thin film resistor is manufactured with forming a preservation film on and around the lead wire. Using a pattern-forming process by etching of the insulation film for forming the metal thin film pattern, the deterioration of the device or the lowering of the durability can be overcome, the resistance of the metal thin film resistor can be easily controlled, and the resolving power can be improved by producing the high-resistance metal thin film temperature having reduced line with of the metal thin film pattern.
摘要翻译：提供一种金属电阻器和制造该电阻器的方法。在基板上形成第一绝缘膜，在绝缘膜上施加感光性膜，通过图案化绝缘膜形成绝缘膜图案。在绝缘膜图案和感光膜上形成金属薄膜之后，去除感光膜是在绝缘膜图案之间形成的金属薄膜图案。在金属薄膜图案和绝缘膜图案上形成第二绝缘膜，并且在金属薄膜图案的焊盘区域处是连接的引线，之后制造形成保鲜膜的金属薄膜电阻器并围绕导线。通过蚀刻用于形成金属薄膜图案的绝缘膜的图案形成处理，可以克服器件的劣化或耐久性的降低，可以容易地控制金属薄膜电阻器的电阻，并且通过生产具有金属薄膜图案的线路减小的高电阻金属薄膜温度，可以提高分辨率。

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