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    • 3. 发明申请
    • POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING APPARATUS
    • 化学机械抛光设备抛光垫
    • US20120071068A1
    • 2012-03-22
    • US13233715
    • 2011-09-15
    • Ah-Ram KIMByeong-In AHNDong-Mok SHIN
    • Ah-Ram KIMByeong-In AHNDong-Mok SHIN
    • B24D11/00B24B53/017
    • B24B37/22
    • This disclosure relates to a polishing pad for chemical mechanical polishing, having a shape where 3 or more semi-oval or semicircular curves that connect 2 valleys neighboring on the plane are connected, and including 2 or more modified patterns that are formed to a determined thickness on the polishing pad, wherein a peak of one modified pattern and a valley of another modified pattern neighboring thereto are sequentially located on the same line. The polishing pad may uniformly disperse slurry over the whole area during a polishing process to provide improved polishing uniformity, and appropriately control residence time of the slurry to increase polishing rate.
    • 本公开涉及一种用于化学机械抛光的抛光垫,其具有连接3个或更多个连接在平面上相邻的2个谷的半椭圆形或半圆形曲线的形状,并且包括形成为确定厚度的2个或更多个修改图案 在抛光垫上,其中一个修改图案的峰值和与其相邻的另一个修改图案的谷值依次位于同一行上。 抛光垫可以在抛光过程中将浆料均匀地分散在整个区域上,以提供改进的抛光均匀性,并适当地控制浆料的停留时间以提高抛光速率。