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    • 2. 发明授权
    • Composition of dielectric for plasma display panel
    • 等离子体显示面板的电介质组成
    • US06383961B1
    • 2002-05-07
    • US09572777
    • 2000-05-17
    • Byung-Gil Ryu
    • Byung-Gil Ryu
    • C03C316
    • C03C3/17C03C14/004C03C2214/04
    • A composition of a dielectric for a plasma display panel in user for fabricating a dielectric thick film for a front substrate having a low sintering temperature, a low thermal expensive coefficient, a high dielectric constant and a high withstand voltage. The composition of a dielectric is a P2O5—ZnO—PbO glass having composition ratios of 30˜60 wt % of P2O5, 5˜40 wt % of PbO, 0˜5 wt % of MgO, 0˜5 wt % of CaO, 0˜10 wt % of La2O3, 0˜5 wt % of SrO, 1˜5 wt % of Al2O3, 0˜2 wt % of Sb2O3, 0˜2 wt % of As2O3, 5˜25 wt % of BaO, and 0˜5 wt % of TeO2.
    • 用于制造具有低烧结温度,低热成本系数,高介电常数和高耐受电压的用于前基板的电介质厚膜的用户中的等离子体显示面板的电介质组合物。 电介质的组成是P 2 O 5,组成比为30〜60重量%的P 2 O 5,5〜40重量%的PbO,0〜5重量%的MgO,0〜5重量%的CaO,0 〜10重量%的La 2 O 3,0〜5重量%的SrO,1〜5重量%的Al 2 O 3,0〜2重量%的Sb 2 O 3,0〜2重量%的As 2 O 3,5〜25重量%的BaO, 5重量%的TeO 2。
    • 5. 发明授权
    • Method of manufacturing microstructure using photosensitive glass substrate
    • 使用感光玻璃基板制造微结构的方法
    • US06511793B1
    • 2003-01-28
    • US09533860
    • 2000-03-24
    • Soo-Je ChoByung-Gil Ryu
    • Soo-Je ChoByung-Gil Ryu
    • G03C556
    • H01J9/242C03C15/00C03C23/002C03C23/007C03C2218/34C03C2218/355H01J2211/36
    • The present invention relates to a method of manufacturing a microstructure such as a barrier lib or a spacer formed at an internal space between two flat panels constructing a flat panel display and, in particular, to a method of manufacturing a microstructure using a photosensitive glass substrate. The method of manufacturing a microstructure in accordance with the present invention includes the steps of preparing a photosensitive glass substrate, forming a mask pattern having a light transmission unit and a shading unit on the photosensitive glass substrate, exposing the photosensitive glass substrate, heat-treating the photosensitive glass substrate, and etching an unexposed portion of the photosensitive glass substrate. In addition, the process of changing the thermal expansive coefficient of the microstructure by heat-treating the photosensitive substrate again can be additionally included after etching and removing the unexposed portion.
    • 本发明涉及在构成平板显示器的两个平板之间的内部空间中形成诸如屏障11b或隔离物的微结构的制造方法,特别涉及使用感光玻璃基板制造微结构的方法 。 根据本发明的制造微结构的方法包括以下步骤:在感光玻璃基板上制备感光玻璃基板,形成具有透光单元和遮光单元的掩模图案,曝光感光玻璃基板,热处理 感光性玻璃基板,蚀刻感光性玻璃基板的未曝光部。 此外,在蚀刻和去除未曝光部分之后,可以另外包括通过再次热处理感光基底来改变微结构的热膨胀系数的过程。
    • 8. 发明授权
    • Composition of dielectric for plasma display panel
    • 等离子体显示面板的电介质组成
    • US06599851B1
    • 2003-07-29
    • US09572778
    • 2000-05-17
    • Byung-Gil Ryu
    • Byung-Gil Ryu
    • C03C810
    • H01J11/12C03C8/10C03C8/14H01J11/38
    • A composition of a dielectric for a plasma display panel in use for fabricating a barrier rib having a low sintering temperature, a low coefficient of thermal expansion, a low dielectric constant and a high withstand voltage. The composition of a dielectric for a plasma display panel comprising a parents glass powder containing 20˜40 wt % of ZnO, 15˜30 wt % of SiO2, 10˜20 wt % of B2O3, 0˜30 wt % of PbO, 0˜20 wt % of MgO, 1˜10 wt % of CaO, 1˜10 wt % of Al2O3, 0˜10 wt % of K2O, 0˜8 wt % of Na2O, 0˜5 wt % of Li2O, 0˜2 wt % of Sb2O3, and 0˜2 wt % of As2O3.
    • 用于制造具有低烧结温度,低热膨胀系数,低介电常数和高耐受电压的隔壁的用于等离子体显示面板的电介质组合物。 用于等离子体显示面板的电介质的组成包括含有20〜40重量%的ZnO,15〜30重量%的SiO 2,10〜20重量%的B 2 O 3,0〜30重量%的PbO,0〜 20重量%的MgO,1〜10重量%的CaO,1〜10重量%的Al 2 O 3,0〜10重量%的K 2 O,0〜8重量%的Na 2 O,0〜5重量%的Li 2 O,0〜 Sb2O3,0〜2重量%的As2O3。
    • 10. 发明授权
    • Barrier structure for plasma display panel and fabrication method thereof
    • 等离子体显示面板的阻挡结构及其制造方法
    • US06456007B1
    • 2002-09-24
    • US09394431
    • 1999-09-13
    • Byung-Gil RyuJae-Sang ChungEun-Ho YooSeok-Kon See
    • Byung-Gil RyuJae-Sang ChungEun-Ho YooSeok-Kon See
    • H01J924
    • H01J9/242H01J2211/36
    • The present invention relates to a barrier structure for a PDP and a fabrication method thereof which are capable of enhancing a discharge efficiency by increasing a discharge space. The barrier structure according to the present invention includes a first barrier layer formed of an insulation substrate having a groove and plane portion formed thereon, and a rib-shaped second barrier layer formed on the plane area of the first barrier layer with respect to the groove. In the present invention, it is possible to increase the plasma discharge efficiency by increasing the coated area of the fluorescent material in the plasma discharge space and it is easy to fabricate the barriers having uniform heights for thereby enhancing a reliability of the PDP. In addition, it is possible to prevent an increase of the discharge voltage by adapting the barrier structure according to the present invention to the opposite electrode type PDP for thereby enhancing an efficiency of the PDP.
    • 本发明涉及PDP的阻挡结构及其制造方法,其能够通过增加放电空间来提高放电效率。 根据本发明的阻挡结构包括由绝缘基板形成的第一阻挡层,所述绝缘基板具有形成在其上的槽和平面部分,以及形成在第一阻挡层的平面区域上的肋状第二阻挡层相对于槽 。 在本发明中,通过增加等离子体放电空间中的荧光材料的涂布面积,可以提高等离子体放电效率,并且容易制造均匀高度的屏障,从而提高PDP的可靠性。 另外,通过使根据本发明的阻挡结构适应于相对电极型PDP可以防止放电电压的增加,从而提高PDP的效率。