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    • 1. 发明授权
    • Digital sound processor having a slot assigner
    • 具有插槽分配器的数字声音处理器
    • US5880387A
    • 1999-03-09
    • US775293
    • 1996-12-31
    • Sang Yong KimHag Keun Kim
    • Sang Yong KimHag Keun Kim
    • G10H1/26G10H1/02G10H1/18G10H7/00G10H1/46
    • G10H7/004G10H1/186
    • A digital sound generating apparatus and sound generating method therefor is disclosed including a CPU interface for exchanging information with a CPU controlling the generation of a sound, a slot memory for storing various control parameters of the sound to be generated, a slot assigner for providing slot information for generating a new sound to the CPU when the new sound is generated, a data processor for executing an operation to reproduce an original sound using the various parameters of the slot memory, and a volume controller for receiving the information of the slot memory and the slot assigner to control the volume of the original sound.
    • 公开了一种数字声音发生装置及其声音产生方法,其包括用于与控制声音生成的CPU交换信息的CPU接口,用于存储要生成的声音的各种控制参数的时隙存储器,用于提供时隙的时隙分配器 用于在产生新声音时向CPU产生新声音的信息,用于执行使用时隙存储器的各种参数再现原始声音的操作的数据处理器,以及用于接收时隙存储器的信息的音量控制器,以及 插槽分配器来控制原始声音的音量。
    • 2. 发明申请
    • INBRED C57BL/6 ES CELLS WITH HIGH DEVELOPMENTAL CAPACITY
    • 具有高发展能力的INBRED C57BL / 6 ES细胞
    • US20120192299A1
    • 2012-07-26
    • US13011799
    • 2011-01-21
    • Sang Yong Kim
    • Sang Yong Kim
    • A01K67/027C12N5/10C12N5/07
    • C12N5/0606
    • Described herein are inbred B6 ES cell lines that exhibit high developmental capacities and have a number of advantages over ES cell lines already available. First, they can be used for gene targeting and have a high percentage of germline transmission when injected into diploid host blastocysts (˜50-80%). Second, these ES cell lines can successfully be used to generate live pups by tetraploid blastocyst complementation, producing a high percentage (15-20%) of mice that are entirely inbred B6 ES cell derived. Third, these ES cells lines can be used to rapidly generate mice that are homozygous for a gene of interest. These advantages indicate that the inbred B6 ES cells provided here facilitate the rapid generation of inbred B6 mouse models in a cost-effective and efficient manner.
    • 本文描述的是具有高发育能力并且已经具有优于已经可获得的ES细胞系的许多优点的近交B6ES细胞系。 首先,它们可以用于基因靶向,并且当注射到二倍体宿主胚泡(〜50-80%)时具有高百分比的种系传播。 第二,这些ES细胞系可以成功地用于通过四倍体囊胚互补产生活的幼崽,产生高百分比(15-20%)完全近交B6ES细胞衍生的小鼠。 第三,这些ES细胞系可用于快速产生对于感兴趣的基因是纯合的小鼠。 这些优点表明,这里提供的近交B6 ES细胞有助于以成本效益高效的方式快速生成近交B6小鼠模型。
    • 5. 发明申请
    • METHOD FOR PRODUCING 5-HYDROXYMETHYL-2-FURFURAL OR ALKYL ETHER DERIVATIVES THEREOF USING AN ION EXCHANGE RESIN IN THE PRESENCE OF AN ORGANIC SOLVENT
    • 在存在有机溶剂中使用离子交换树脂生产5-羟甲基-2-丙烯或其衍生物的方法
    • US20140235881A1
    • 2014-08-21
    • US14348566
    • 2012-07-09
    • Jin Ku ChoSang Yong KimJae Hoon ChoBo Ra KimPaul Joo
    • Jin Ku ChoSang Yong KimJae Hoon ChoBo Ra KimPaul Joo
    • C07D307/50
    • C07D307/50C07D307/46C07D307/48
    • The present invention relates to a method for producing a furan-based compound using an ion exchange resin in the presence of an organic solvent. In the method for producing a furan-based compound according to the present invention, a furan-based compound is made from an aldose-type hexose compound in the presence of an organic solvent by using an anion exchange resin and a cation exchange resin. Thus, the aldose-type hexose compound obtained from biomass by simultaneously or consecutively using the anion/cation exchange resins as catalysts can be made into 5-hydroxymethyl-2-furfural (HMF) or alkyl ether derivatives thereof such as 5-alkoxymethyl-2-furfural (AMF) without using an expensive reagent. Also, since the selection of an organic solvent is not limitative and a heterogeneous catalyst can be used, separation and purification is easy and chemically stable AMF can be directly obtained. Further, the conversion efficiency of the aldose-type hexose compound is excellent, and the hexose compound can be used at a high concentration.
    • 本发明涉及在有机溶剂存在下使用离子交换树脂生产呋喃类化合物的方法。 在本发明的呋喃类化合物的制造方法中,通过使用阴离子交换树脂和阳离子交换树脂,在有机溶剂的存在下,通过醛糖型己糖化合物制造呋喃系化合物。 因此,通过同时或连续使用阴离子/阳离子交换树脂作为催化剂从生物质获得的醛糖型己糖化合物可以制成5-羟甲基-2-糠醛(HMF)或其烷基醚衍生物,例如5-烷氧基甲基-2 (AMF),而不使用昂贵的试剂。 此外,由于有机溶剂的选择不是限制性的并且可以使用多相催化剂,所以分离和纯化容易,并且可以直接获得化学稳定的AMF。 此外,醛糖型己糖化合物的转化效率优异,可以高浓度使用己糖化合物。
    • 7. 发明授权
    • MOS transistor that inhibits punchthrough and method for fabricating the same
    • 抑制穿透的MOS晶体管及其制造方法
    • US06200841B1
    • 2001-03-13
    • US09223236
    • 1998-12-30
    • Sang Yong Kim
    • Sang Yong Kim
    • H01L2176
    • H01L29/66553H01L29/0649H01L29/0653H01L29/66575H01L29/78
    • A MOS transistor that includes: a semiconductor substrate; a well region formed in the semiconductor substrate, where a trench region is defined in the well region; an isolator formed on a corner of the trench region, where the trench region is filled with polysilicon; a gate conductor formed over the trench region; and source/drain regions formed within the well region laterally aligned to the gate conductor. A suitable method to form the MOS transistor includes the acts of: forming a well region in a semiconductor substrate; forming a trench region in the well region; forming an isolator in a corner of the trench region; filling the trench region with polysilicon; forming a gate conductor formed over the trench region; and forming source/drain regions within the well region on opposite sides of the gate conductor.
    • 一种MOS晶体管,包括:半导体衬底; 形成在所述半导体衬底中的阱区,其中在所述阱区中限定沟槽区; 隔离器,形成在沟槽区域的拐角处,其中沟槽区域被多晶硅填充; 形成在所述沟槽区域上的栅极导体; 以及形成在阱区内的与栅极导体横向对准的源/漏区。 形成MOS晶体管的合适方法包括以下动作:在半导体衬底中形成阱区; 在所述阱区域中形成沟槽区域; 在沟槽区域的角部形成绝缘体; 用多晶硅填充沟槽区域; 形成在沟槽区域上形成的栅极导体; 以及在栅极导体的相对侧上的阱区域内形成源极/漏极区域。
    • 9. 发明授权
    • MOS transistor that inhibits punchthrough
    • 抑制穿透的MOS晶体管
    • US06489651B1
    • 2002-12-03
    • US09595851
    • 2000-06-16
    • Sang Yong Kim
    • Sang Yong Kim
    • H01L2978
    • H01L29/66553H01L29/0649H01L29/0653H01L29/66575H01L29/78
    • A MOS transistor that includes: a semiconductor substrate; a well region formed in the semiconductor substrate, where a trench region is defined in the well region; an isolator formed on a corner of the trench region, where the trench region is filled with polysilicon; a gate conductor formed over the trench region; and source/drain regions formed within the well region laterally aligned to the gate conductor. A suitable method to form the MOS transistor includes the acts of: forming a well region in a semiconductor substrate; forming a trench region in the well region; forming an isolator in a corner of the trench region; filling the trench region with polysilicon; forming a gate conductor formed over the trench region; and forming source/drain regions within the well region on opposite sides of the gate conductor.
    • 一种MOS晶体管,包括:半导体衬底; 形成在所述半导体衬底中的阱区,其中在所述阱区中限定沟槽区; 隔离器,形成在沟槽区域的拐角处,其中沟槽区域被多晶硅填充; 形成在所述沟槽区域上的栅极导体; 以及形成在阱区内的与栅极导体横向对准的源/漏区。 形成MOS晶体管的合适方法包括以下动作:在半导体衬底中形成阱区; 在所述阱区域中形成沟槽区域; 在沟槽区域的角部形成绝缘体; 用多晶硅填充沟槽区域; 形成在沟槽区域上形成的栅极导体; 以及在栅极导体的相对侧上的阱区域内形成源极/漏极区域。