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    • 1. 发明授权
    • Method for fabricating a semiconductor device having a tapered contact
hole
    • 一种具有锥形接触孔的半导体器件的制造方法
    • US6107138A
    • 2000-08-22
    • US744805
    • 1996-11-06
    • Ei Sam JeongSang Wook KimByung Suk LeeYong Hyeock Yoon
    • Ei Sam JeongSang Wook KimByung Suk LeeYong Hyeock Yoon
    • H01L21/302H01L21/02H01L21/28H01L21/3065H01L21/768H01L21/8242H01L23/522H01L27/108
    • H01L27/10852H01L28/91
    • A semiconductor device includes: a field oxide layer formed on a semiconductor substrate; a transistor having an active region formed on a semiconductor substrate; an interlayer insulating layer formed on the transistor and the field oxide; and a tapered contact hole exposing the active region adjacent to the field oxide layer, wherein an upper portion of the tapered contact hole is wider than a lower portion thereof so that the field oxide is not etched during the contact hole etching process. A method for fabricating a semiconductor device includes the steps for: forming a field oxide layer on a semiconductor substrate; forming a transistor having an active region on a semiconductor substrate; forming an interlayer insulating layer on the resulting structure; and forming a tapered contact hole exposing the active region adjacent to the field oxide layer, wherein an upper portion of the tapered contact hole is wider than a lower portion thereof so that the field oxide is not etched during the contact hole etching process.
    • 半导体器件包括:形成在半导体衬底上的场氧化物层; 具有形成在半导体衬底上的有源区的晶体管; 形成在晶体管和场氧化物上的层间绝缘层; 以及使所述有源区域与所述场氧化物层相邻露出的锥形接触孔,其中所述锥形接触孔的上部比其下部宽,使得在所述接触孔蚀刻工艺期间不会蚀刻所述场氧化物。 一种制造半导体器件的方法包括以下步骤:在半导体衬底上形成场氧化物层; 在半导体衬底上形成具有有源区的晶体管; 在所得结构上形成层间绝缘层; 以及形成露出与所述场氧化物层相邻的所述有源区的锥形接触孔,其中所述锥形接触孔的上部比其下部宽,使得在所述接触孔蚀刻处理期间不会蚀刻所述场氧化物。
    • 5. 发明授权
    • Grade control apparatus of display set for tapestry
    • 挂毯展示台等级控制装置
    • US06554242B2
    • 2003-04-29
    • US10160157
    • 2002-06-04
    • Sang Wook Kim
    • Sang Wook Kim
    • E04G300
    • F16M13/02F16M11/10F16M11/18Y10S248/923
    • A grade control apparatus of display set for tapestry. The apparatus includes at least two guide brackets attached to a wall; holding-down brackets for holding a display device, each having one end being pivotably connected to one end of the corresponding guide bracket; adjusting link transmission shafts installed within each guide bracket, each having one end on which a bevel gear is installed and the other end on which a shifting boss is installed; an angle adjustable shaft being installed between the guide brackets and having gears for being engaged with each bevel gear; and an angle adjustable hand lever for receiving an external force, the angle adjustable hand lever being formed on at least one angle adjustable shaft. The present invention easily adjusts the angle of the display device so as to comply with a user's wishes, and finely adjusts the angle of the display device by a small force.
    • 一种用于挂毯的显示器的档次控制装置。 该装置包括至少两个连接到墙壁上的引导支架; 用于保持显示装置的按压支架,每个具有一端可枢转地连接到相应导向支架的一端; 调整安装在每个引导支架内的连杆传动轴,每个引导支架的一端安装有锥齿轮,另一端安装有换档凸台; 角度可调轴安装在引导支架之间并具有与每个锥齿轮啮合的齿轮; 以及用于接受外力的角度可调节手柄,所述角度可调手柄形成在至少一个角度可调轴上。 本发明可以容易地调整显示装置的角度以符合用户的愿望,并且通过较小的力精细地调整显示装置的角度。
    • 8. 发明申请
    • HIGH CURRENT SOLID TARGET FOR RADIOISOTOPE PRODUCTION AT CYCLOTRON USING METAL FOAM
    • 使用金属泡沫的CYCLOTRON生产射电光电子的高电流固体靶
    • US20110091001A1
    • 2011-04-21
    • US12821949
    • 2010-06-23
    • Min Goo HurSeung Dae YangSang Wook KimIn Jong KimSang Mu Choi
    • Min Goo HurSeung Dae YangSang Wook KimIn Jong KimSang Mu Choi
    • H05H6/00
    • H05H6/00
    • Disclosed herein is a high current solid target for radioisotope production at a cyclotron using a metal foam, and more specifically, a high current solid target for isotope production, which attaches a metal foam to the rear surface of the solid target plate. A high current solid target for isotope production including a metal foam according to the present invention may exhibit excellent cooling performances to increase the amount of proton beam current irradiated on the solid target compared to conventional planar-type solid targets. Because the irradiation of the increased proton beam current may increase the amount of an isotope produced per unit time and even an irradiation of proton beam in a short time may allow for production of a desired amount of an isotope, the solid target may be usefully used for production of medical cyclotron nuclides.
    • 本文公开了用于使用金属泡沫的回旋加速器的放射性同位素生产的高电流固体靶,更具体地,用于同位素产生的高电流固体靶,其将金属泡沫附着到固体靶板的后表面。 与现有的平面型固体靶相比,含有根据本发明的金属泡沫的高电流固体靶可以表现出优异的冷却性能,以增加照射在固体靶上的质子束电流的量。 因为增加的质子束电流的照射可以增加每单位时间产生的同位素的量,甚至在短时间内甚至照射质子束可以允许产生所需量的同位素,所以可以有用地使用固体靶 用于生产医用回旋加速器核素。