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1. 发明申请

US20120016076A1 LOW TEMPERATURE CURABLE POLYIMIDE RESIN AND METHOD OF PREPARING THE SAME 有权
标题翻译：低温可固化聚酰胺树脂及其制备方法
公开(公告)号：US20120016076A1
公开(公告)日：2012-01-19
申请号：US13182012
申请日：2011-07-13
申请人： Sang Woo KIM , Se Jin SHIN , Dong Hyun OH , Kyung Jun KIM
发明人： Sang Woo KIM , Se Jin SHIN , Dong Hyun OH , Kyung Jun KIM
IPC分类号： C09D11/10 , C08G77/00 , C08G75/14 , C08G75/20 , C08G73/10 , C08G16/00
CPC分类号： C09D11/101 , C08G73/1032 , C08G73/1039 , C08G73/105 , C08G73/1067 , G03F7/0007 , G03F7/0233
摘要： In a method for preparing a polyimide resin by reacting diamine and dianhydride, the polyimide resin is polymerized under the presence of a solvent having a boiling point ranging from 130° C. to 180° C. so as to be curable at a low temperature ranging from 150° C. to 250° C.Because the polyimide is curable even at a low temperature, when the polyimide resin is used as an electronic material, damage to equipment due to an otherwise high temperature process can be minimized, and in addition, the polyimide resin can be extensively used as an electronic material such as for a plastic substrate, or the like.
摘要翻译：在二胺和二酐反应制备聚酰亚胺树脂的方法中，聚酰亚胺树脂在沸点范围为130℃至180℃的溶剂存在下聚合，以便在低温范围内可固化由于聚酰亚胺即使在低温下也可固化，因此当将聚酰亚胺树脂用作电子材料时，由于其它高温处理而导致的设备损坏能够最小化，另外，可以将聚酰亚胺树脂广泛用作塑料基板等电子材料。

2. 发明申请

US20110223538A1 PHOTOSENSITIVE ORGANIC INSULATOR COMPOSITION FOR OLED DEVICE 审中-公开
标题翻译：用于OLED器件的光敏有机绝缘体组合物
公开(公告)号：US20110223538A1
公开(公告)日：2011-09-15
申请号：US13046319
申请日：2011-03-11
申请人： Sang Woo KIM , Kyoung Ho AHN , Kyung Jun KIM , Se Jin SHIN , Hye Won JEONG , Chan Hyo PARK , Jung Ho JO , Yu Na KIM
发明人： Sang Woo KIM , Kyoung Ho AHN , Kyung Jun KIM , Se Jin SHIN , Hye Won JEONG , Chan Hyo PARK , Jung Ho JO , Yu Na KIM
IPC分类号： G03F7/004
CPC分类号： G03F7/0007 , C08G73/1039 , C08G73/1042 , C08G73/1046 , C08G73/1082 , C09D179/08 , G03F7/0233 , H01B3/30 , H01B3/306
摘要： Polyimide or a precursor thereof represented by Chemical Formula 1 or 2 and a photosensitive organic insulator composition having the same are disclosed. The polyimide or the precursor thereof is prepared from diamine including polyalkyleneoxide. The use of the photosensitive organic insulator composition can allow for low temperature curing and shorten a curing time, form a low taper angle, and implement a high sensitivity and high residual film. Also, since the photosensitive organic insulator composition, as a positive photosensitive composition, has excellent solubility with respect to an alkali solution of an exposed portion, the generation of impurity can be minimized.
摘要翻译：公开了由化学式1或2表示的聚酰亚胺或其前体和具有该化合物的光敏有机绝缘体组合物。聚酰亚胺或其前体由包括聚环氧烷的二胺制备。使用光敏有机绝缘体组合物可以实现低温固化和缩短固化时间，形成低锥角，并实现高灵敏度和高残留膜。此外，由于作为正性感光性组合物的感光性有机绝缘体组合物相对于露出部分的碱溶液具有优异的溶解性，因此可以使杂质的产生最小化。

3. 发明申请

US20110046277A1 PHOTOSENSITIVE POLYIMIDE AND PHOTOSENSITIVE RESIN COMPOSITION COMPRISING THE SAME 有权
标题翻译：含有聚酰亚胺和感光性树脂的组合物
公开(公告)号：US20110046277A1
公开(公告)日：2011-02-24
申请号：US12861761
申请日：2010-08-23
申请人： Jung Ho JO , Kyung Jun KIM , Hye Ran SEONG , Hye Won JEONG , Chan Hyo PARK , Yu Na KIM , Sang Woo KIM , Se Jin SHIN , Kyoung Ho AHN
发明人： Jung Ho JO , Kyung Jun KIM , Hye Ran SEONG , Hye Won JEONG , Chan Hyo PARK , Yu Na KIM , Sang Woo KIM , Se Jin SHIN , Kyoung Ho AHN
IPC分类号： C08L79/08 , C08G69/26 , C08K5/41 , C08K5/151
CPC分类号： G03F7/0233 , C08G73/1042 , C08G73/1046 , C08G73/105 , C08G73/16 , C08L79/08 , G03F7/0048
摘要： The present invention relates to polyimide or precursor thereof represented by Chemical Formula 1 or 2 and a photosensitive resin composition including the same. The polyimide or precursor thereof are fabricated using diamine comprising polyalkyleneoxide. The photosensitive resin composition of the present invention has excellent light transmissivity, an excellent resolution, and excellent photo sensitivity and image forming performance. Further, the photosensitive resin composition has high adhesiveness with substrates, such as a silicon film, a silicon oxide film, and a metal film. In particular, an excellent film without failure, such as crack, can be formed.
摘要翻译：本发明涉及由化学式1或2表示的聚酰亚胺或其前体和包含其的感光性树脂组合物。聚酰亚胺或其前体使用包含聚环氧烷的二胺制造。本发明的感光性树脂组合物具有优异的透光性，优异的分辨率，优异的光敏性和成像性能。此外，感光性树脂组合物与硅膜，氧化硅膜，金属膜等基材的粘合性高。特别地，可以形成无破裂的优异的膜，例如裂纹。

4. 发明申请

US20120205622A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120205622A1
公开(公告)日：2012-08-16
申请号：US13454650
申请日：2012-04-24
申请人： Kyung Jun KIM
发明人： Kyung Jun KIM
IPC分类号： H01L33/06 , H01L33/30
CPC分类号： H01L33/06 , B82Y99/00 , H01L33/04 , H01L33/12 , H01L33/32
摘要： A semiconductor light emitting device includes a plurality of first conductive type semiconductor layers; a plurality of second conductive type semiconductor layers; an active layer between the first and second conductive type semiconductor layers, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers; a first electrode connected to the first conductive type semiconductor layers; and a second electrode connected to the second conductive type semiconductor layers, wherein the first conductive type semiconductor layers includes a first and second AlGaN based layers, and the plurality of quantum well layers of the active layer include an InAlGaN layer.
摘要翻译：一种半导体发光器件，包括多个第一导电型半导体层; 多个第二导电型半导体层; 所述第一和第二导电类型半导体层之间的有源层，其中所述有源层包括多个量子势垒层和多个量子阱层; 连接到所述第一导电类型半导体层的第一电极; 以及连接到所述第二导电类型半导体层的第二电极，其中所述第一导电类型半导体层包括第一和第二AlGaN基层，并且所述有源层的所述多个量子阱层包括InAlGaN层。

5. 发明申请

US20110233518A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110233518A1
公开(公告)日：2011-09-29
申请号：US13154133
申请日：2011-06-06
申请人： Kyung Jun KIM
发明人： Kyung Jun KIM
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y99/00 , H01L33/04 , H01L33/12 , H01L33/32
摘要： A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor layer; an active layer on the second semiconductor layer, the active layer including a multi-quantum well structure having a plurality of quantum barrier layers and a plurality of quantum well layers; a third semiconductor layer including a second type dopant on the active layer; and a fourth semiconductor layer including the second type dopant on the third semiconductor layer. The first semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN (X=1,0
摘要翻译：一种半导体发光器件，包括：包括第一类型掺杂剂的第一半导体层; 在所述第一半导体层上包括所述第一类型掺杂剂的第二半导体层; 所述有源层包括具有多个量子势垒层和多个量子阱层的多量子阱结构; 在所述有源层上包括第二类型掺杂剂的第三半导体层; 以及在所述第三半导体层上包括所述第二类型掺杂剂的第四半导体层。第一半导体层具有AlY（GaxIn1-x）1-YN（X = 1,0

6. 发明申请

US20090039371A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THE SAME 有权
标题翻译：半导体发光装置和具有该发光装置的发光装置
公开(公告)号：US20090039371A1
公开(公告)日：2009-02-12
申请号：US12188755
申请日：2008-08-08
申请人： Kyung Jun KIM , Hyo Kun Son
发明人： Kyung Jun KIM , Hyo Kun Son
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L24/32 , H01L33/405 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure on the substrate, comprising a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a first electrode unit on sidewalls of the substrate and the first conductive type semiconductor layer.
摘要翻译：提供了具有半导体发光器件的半导体发光器件和发光器件。半导体发光器件包括衬底，衬底上的发光结构，包括在衬底的侧壁上的第一导电类型半导体层，有源层，第二导电类型半导体层和第一电极单元，并且第一导电型半导体层。

7. 发明申请

US20100219435A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100219435A1
公开(公告)日：2010-09-02
申请号：US12648118
申请日：2009-12-28
申请人： Kyung Jun KIM , Chul Ho Park
发明人： Kyung Jun KIM , Chul Ho Park
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/44 , H01L2224/48091 , H01L2924/00014
摘要： Provided is a light emitting device. The light emitting device comprises a body, a light emitting diode on the body, a resin layer on the light emitting diode, and a primer layer containing a metal material on the resin layer.
摘要翻译：提供了一种发光装置。发光装置包括主体，主体上的发光二极管，发光二极管上的树脂层和在树脂层上含有金属材料的底漆层。

8. 发明申请

US20100128199A1 LIGHT EMITTING APPARATUS AND DISPLAY APPARATUS USING THE SAME 有权
标题翻译：使用相同的发光装置和显示装置
公开(公告)号：US20100128199A1
公开(公告)日：2010-05-27
申请号：US12623300
申请日：2009-11-20
申请人： Kyung Jun KIM , Chul Ho Park
发明人： Kyung Jun KIM , Chul Ho Park
IPC分类号： G02F1/1335 , H01L33/00
CPC分类号： H01L25/0753 , G02F1/133603 , G02F1/133609 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/00
摘要： A light emitting apparatus including a first light emitting device including a first light emitting diode chip configured to emit light of a first rank included in a first color gamut, and a second light emitting device including a second light emitting diode chip configured to emit light of a second rank included in the first color gamut, in which the first rank is different than the second rank. In addition, the first and second light emitting devices are arranged in relation to each other such that the light emitted by the first emitting device mixes with light emitted by the second light emitting device to form light of a third rank different than the first and second ranks.
摘要翻译：一种发光装置，包括第一发光装置，其包括被配置为发射包括在第一色域中的第一等级的第一发光二极管芯片的第一发光装置，以及包括第二发光二极管芯片的第二发光装置，所述第二发光装置被配置为发射包括在第一色域中的第二等级，其中第一等级不同于第二等级。此外，第一和第二发光器件相对于彼此布置，使得由第一发光器件发射的光与由第二发光器件发射的光混合形成不同于第一和第二发光器件的第三等级的光排名

9. 发明申请

US20080315225A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20080315225A1
公开(公告)日：2008-12-25
申请号：US12144435
申请日：2008-06-23
申请人： Kyung Jun KIM
发明人： Kyung Jun KIM
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/12
摘要： Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a p-type substrate, a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer is formed on the p-type substrate. The active layer is formed on the p-type semiconductor layer. The n-type semiconductor layer is formed on the active layer.
摘要翻译：提供一种半导体发光器件及其制造方法。半导体发光器件包括p型衬底，p型半导体层，有源层和n型半导体层。 p型半导体层形成在p型衬底上。有源层形成在p型半导体层上。 n型半导体层形成在有源层上。

10. 发明申请

US20120007128A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THE SAME 有权
标题翻译：半导体发光装置和具有该发光装置的发光装置
公开(公告)号：US20120007128A1
公开(公告)日：2012-01-12
申请号：US13240477
申请日：2011-09-22
申请人： Kyung Jun KIM , Hyo Kun Son
发明人： Kyung Jun KIM , Hyo Kun Son
IPC分类号： H01L33/60 , H01L33/42 , H01L33/40
CPC分类号： H01L33/385 , H01L24/32 , H01L33/405 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a second electrode electrically connected to the second conductive type semiconductor layer, a plurality of first electrodes disposed on a plurality of sidewalls of the first conductive type semiconductor layer, and wherein the plurality of first electrodes are spaced apart from each other.
摘要翻译：提供了具有半导体发光器件的半导体发光器件和发光器件。半导体发光器件包括衬底，设置在衬底上的发光结构，包括第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层，电连接到第二导电类型半导体层的第二电极，设置在第一导电类型半导体层的多个侧壁上的多个第一电极，并且其中多个第一电极彼此间隔开。

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