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    • 3. 发明申请
    • Transmission of control information according to grouping of services in a mobile communication system
    • 根据移动通信系统中的业务分组传输控制信息
    • US20060176838A1
    • 2006-08-10
    • US11336543
    • 2006-01-19
    • Young LeeSung ChunMyung Jung
    • Young LeeSung ChunMyung Jung
    • H04H1/00
    • H04L12/189H04W4/06H04W4/12
    • A method of communicating a point-to-multipoint service in a wireless communication system comprises receiving through a control channel a first message comprising a first point-to-multipoint service group identifier associated with a first plurality of point-to-multipoint service for a predetermined area. The method also comprises receiving a second message through the control channel comprising a list of point-to-multipoint service identifiers associated with the first point-to-multipoint service group identifier. The method also comprises processing according to control information received through the control channel if the list of point-to-multipoint service identifiers comprises at least one service that a user equipment is subscribed to. The control channel may be a point-to-multipoint control channel. The first message may comprise a list of point-to-multipoint services associated with modified control information.
    • 一种在无线通信系统中传送点对多点服务的方法包括:通过控制信道接收包括与第一多个点对多点服务相关联的第一点对多点服务组标识符的第一消息, 预定区域。 该方法还包括通过控制信道接收包括与第一点对多点服务组标识符相关联的点对多点服务标识符的列表的第二消息。 如果点对多点服务标识符的列表包括用户设备订阅的至少一个服务,则该方法还包括根据通过控制信道接收的控制信息进行处理。 控制信道可以是点对多点控制信道。 第一消息可以包括与修改的控制信息相关联的点对多点服务的列表。
    • 5. 发明申请
    • Strained channel transistor and method of fabricating the same
    • 应变通道晶体管及其制造方法
    • US20070023745A1
    • 2007-02-01
    • US11494348
    • 2006-07-26
    • Myung Jung
    • Myung Jung
    • H01L31/00
    • H01L29/1054H01L29/165H01L29/66636H01L29/7848
    • A strained channel transistor according to the present invention includes a semiconductor substrate, a semiconductor layer having a lattice constant larger than the lattice constant of the semiconductor substrate on the semiconductor substrate, a strained channel layer on the semiconductor layer, and one or more epitaxial layers on sides of the strained channel layer, configured to change the lattice structure of the strained channel layer. Trenches may be formed in the strained channel layer, and the epitaxial layer(s) formed in the trenches, and stress from the epitaxial layer may increase the strained channel layer's lattice distance, and in the end, enhance the mobility of charge carriers through the channel.
    • 根据本发明的应变通道晶体管包括半导体衬底,具有比半导体衬底上的半导体衬底的晶格常数大的晶格常数的半导体层,半导体层上的应变沟道层和一个或多个外延层 在应变通道层的侧面上,被配置为改变应变通道层的晶格结构。 可以在应变沟道层中形成沟槽,并且形成在沟槽中的外延层以及来自外延层的应力可能增加应变沟道层的晶格距离,并且最终增强载流子的迁移率 渠道。
    • 8. 发明申请
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US20080042124A1
    • 2008-02-21
    • US11975167
    • 2007-10-17
    • Myung Jung
    • Myung Jung
    • H01L29/06
    • H01L29/0847H01L21/823807H01L21/823878H01L21/84H01L27/1203H01L29/1054H01L29/66575H01L29/78Y10S438/938
    • A semiconductor device and a method for manufacturing the same are disclosed, in which an insulating layer may be formed in a strained silicon layer under source/drain regions to substantially overcome conventional problems resulting from a channel decrease in the semiconductor device. A method for manufacturing the semiconductor device may include growing a germanium layer on a first silicon layer; forming at least two trenches in the germanium layer; forming an insulating layer in the germanium layer including the trenches; forming at least two gate insulating layer patterns by polishing the germanium layer and the insulating layer to coplanarity in the bottom of the trenches; re-growing and planarizing the germanium layer; forming a second silicon layer on the germanium layer; forming a gate insulating layer and a gate electrode on the second silicon layer between the at least two insulating layers; and forming source/drain regions by implanting impurity ions into the second silicon layer at sides of the gate electrode.
    • 公开了半导体器件及其制造方法,其中可以在源极/漏极区域处的应变硅层中形成绝缘层,以基本上克服由半导体器件中的沟道减小引起的常规问题。 半导体器件的制造方法可以包括在第一硅层上生长锗层; 在锗层中形成至少两个沟槽; 在包括沟槽的锗层中形成绝缘层; 通过将锗层和绝缘层抛光到沟槽底部的共面度来形成至少两个栅极绝缘层图案; 重新生长和平坦化锗层; 在锗层上形成第二硅层; 在所述至少两个绝缘层之间的所述第二硅层上形成栅极绝缘层和栅电极; 以及通过在栅电极的侧面将杂质离子注入第二硅层来形成源/漏区。