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1. 发明申请

US20120273783A1 SEMICONDUCTOR APPARATUS 有权
公开(公告)号：US20120273783A1
公开(公告)日：2012-11-01
申请号：US13544548
申请日：2012-07-09
申请人： Sang Jin BYEON , Jae Jin LEE
发明人： Sang Jin BYEON , Jae Jin LEE
IPC分类号： H01L25/16
CPC分类号： H03K19/173
摘要： A semiconductor apparatus has a plurality of chips stacked therein, and generation timing of read control signals for controlling read operations of the plurality of stacked chips is controlled such that times after a read command is applied to when data are outputted from respective chips are made to substantially correspond to one another.
摘要翻译：半导体装置具有堆叠的多个芯片，并且控制用于控制多个堆叠芯片的读取操作的读取控制信号的生成定时，使得在将读取命令应用于从各个芯片输出数据之后的时间被制成基本相对应。

2. 发明申请

US20110187429A1 SEMICONDUCTOR APPARATUS 有权
公开(公告)号：US20110187429A1
公开(公告)日：2011-08-04
申请号：US12838332
申请日：2010-07-16
申请人： Sang Jin BYEON , Jae Jin Lee
发明人： Sang Jin BYEON , Jae Jin Lee
IPC分类号： H03L7/00
CPC分类号： H03L7/00
摘要： A semiconductor apparatus has a plurality of chips stacked therein. Read control signals for controlling read operations of the plurality of chips are synchronized with a reference clock such that the time taken from the application of a read command to the output of data for each of the plurality of chips is maintained substantially the same.
摘要翻译：半导体装置具有堆叠在其中的多个芯片。用于控制多个芯片的读取操作的读取控制信号与参考时钟同步，使得从应用读取命令到多个芯片中的每一个的数据输出所花费的时间保持基本相同。

3. 发明申请

US20120104388A1 THREE-DIMENSIONAL STACKED SEMICONDUCTOR INTEGRATED CIRCUIT AND TSV REPAIR METHOD THEREOF 审中-公开
标题翻译：三维堆叠半导体集成电路及其TSV维修方法
公开(公告)号：US20120104388A1
公开(公告)日：2012-05-03
申请号：US12970923
申请日：2010-12-16
申请人： Min Seok CHOI , Sang Jin BYEON , Young Jun KU
发明人： Min Seok CHOI , Sang Jin BYEON , Young Jun KU
IPC分类号： H01L23/58 , H01L21/30
CPC分类号： G11C29/806 , H01L25/0657 , H01L25/50 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2225/06596
摘要： Provided is a 3D stacked semiconductor integrated circuit including a plurality of chips coupled through a plurality of TSVs. A first chip among the plurality of chips is configured to detect and repair a defective TSV among the plurality of TSVs, and transmit repair information to remaining chips other than the first chip, and the remaining chips other than the first chip are configured to repair the defective TSV in response to the repair information.
摘要翻译：提供了一种3D叠层半导体集成电路，其包括通过多个TSV耦合的多个芯片。多个芯片中的第一芯片被配置为检测和修复多个TSV之间的缺陷TSV，并将修复信息发送到除第一芯片之外的剩余芯片，并且除第一芯片之外的其余芯片被配置为修复有缺陷的TSV响应修复信息。

4. 发明申请

US20130241314A1 SEMICONDUCTOR APPARATUS 有权
公开(公告)号：US20130241314A1
公开(公告)日：2013-09-19
申请号：US13602257
申请日：2012-09-03
申请人： Tae Sik YUN , Sang Jin BYEON
发明人： Tae Sik YUN , Sang Jin BYEON
IPC分类号： H03K17/00
CPC分类号： H01L25/0657 , G01R31/2882 , H01L2224/16 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H03K17/14 , H03K19/00369 , Y10T307/826
摘要： A semiconductor apparatus includes: a slave chip including a signal transfer unit configured to determine whether or not to transfer an input signal in response to a chip select signal; a master chip including a replica circuit unit having the same configuration as the signal transfer unit and a signal output unit configured to receive an output signal of the signal transfer unit and an output signal of the replica circuit unit and generate an output signal in response to the control signal; a first through-chip via vertically formed through the slave chip, and having one end connected to the master chip to receive the input signal and the other end connected to the signal transfer unit; and a second through-chip via vertically formed through the slave chip, and having one end connected to the signal transfer unit and the other end connected to the signal output unit.
摘要翻译：半导体装置包括：从芯片，包括信号传送单元，配置为响应于芯片选择信号确定是否传送输入信号; 包括具有与信号传送单元相同配置的复制电路单元的主芯片和被配置为接收信号传送单元的输出信号和复制电路单元的输出信号的信号输出单元，并响应于控制信号; 通过垂直形成的从芯片的第一通芯片，并且一端连接到主芯片以接收输入信号，另一端连接到信号传送单元; 以及通过垂直形成的从芯片的第二通芯片，并且其一端连接到信号传送单元，另一端连接到信号输出单元。

5. 发明申请

US20120124408A1 SEMICONDUCTOR APPARATUS 有权
公开(公告)号：US20120124408A1
公开(公告)日：2012-05-17
申请号：US13166094
申请日：2011-06-22
申请人： Sang Jin BYEON , Jae Bum Ko
发明人： Sang Jin BYEON , Jae Bum Ko
IPC分类号： G06F1/06 , H01L23/498
CPC分类号： G11C5/04 , G11C16/20 , G11C2029/4402 , H01L2224/48091 , H01L2224/48227 , H01L2224/49113 , H01L2924/00014
摘要： A semiconductor apparatus may comprise: a first chip ID generation unit configured to receive an enable signal through a first through-silicon via and a clock signal through a second through-silicon via and generate a first chip ID signal and a delayed enable signal; a second chip ID generation unit configured to receive the delayed enable signal through a third through-silicon via from the first chip ID generation unit and the clock signal and generate a second chip ID signal; a first chip selection signal generation unit configured to receive the first chip ID signal and a main ID signal and generate a first chip selection signal; and a second chip selection signal generation unit configured to receive the second chip ID signal and the main ID signal and generate a second chip selection signal.
摘要翻译：半导体装置可以包括：第一芯片ID生成单元，被配置为通过第一穿通硅通孔接收使能信号和通过第二通过硅通孔的时钟信号，并生成第一芯片ID信号和延迟使能信号; 第二芯片ID生成单元，被配置为通过来自第一芯片ID生成单元的第三通过硅通孔和时钟信号接收延迟使能信号，并生成第二芯片ID信号; 第一芯片选择信号生成单元，被配置为接收第一芯片ID信号和主ID信号，并生成第一芯片选择信号; 以及第二芯片选择信号生成单元，被配置为接收第二芯片ID信号和主ID信号，并生成第二芯片选择信号。

6. 发明申请

US20110267137A1 SEMICONDUCTOR APPARATUS 失效
公开(公告)号：US20110267137A1
公开(公告)日：2011-11-03
申请号：US12840966
申请日：2010-07-21
申请人： Jae Bum KO , Sang Jin BYEON
发明人： Jae Bum KO , Sang Jin BYEON
IPC分类号： H03K19/003
CPC分类号： H01L25/0657 , G11C8/12 , H01L2225/06527 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus includes an individual-chip-designating-code setting block configured to generate a plurality of sets of individual-chip-designating-codes which have different code values or in which at least two sets of individual-chip-designating-codes have the same code value, in response to a plurality of chip fuse signals; a control block configured to generate a plurality of enable control signals in response to the plurality of chip fuse signals and most significant bits of the plurality of sets of individual-chip-designating-codes; and an individual chip activation block configured to compare individual-chip-designating-codes of the plurality of sets of individual-chip-designating-codes excluding the most significant bits, with chip selection addresses in response to the plurality of enable control signals, and enable one of a plurality of individual-chip-activation-signals depending upon a comparison result.
摘要翻译：一种半导体装置，包括单芯片指定码设置块，被配置为生成具有不同码值的多组独立芯片指定码，或者至少两组独立芯片指定码具有相应的代码值，响应于多个芯片熔丝信号; 控制块，被配置为响应于所述多个芯片熔丝信号和所述多组独立芯片指定代码中的最高有效位而产生多个使能控制信号; 以及单独的芯片激活块，其被配置为响应于所述多个使能控制信号，将所述多个独立芯片指定码组中排除最高有效位的各个芯片指定码与芯片选择地址进行比较，以及根据比较结果使能多个个别芯片激活信号中的一个。

7. 发明申请

US20100036634A1 APPARATUS AND METHOD FOR GENERATING RESISTANCE CALIBRATION CODE IN SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：在半导体集成电路中产生电阻校准码的装置和方法
公开(公告)号：US20100036634A1
公开(公告)日：2010-02-11
申请号：US12478201
申请日：2009-06-04
申请人： Sang Jin BYEON
发明人： Sang Jin BYEON
IPC分类号： G01R35/00
CPC分类号： H03K19/00
摘要： A resistance calibration code generating apparatus includes a code calibration unit configured to calibrate and output code values of a resistance calibration code during predetermined cycles of a calibration clock, which are determined by a code calibration time control command, and a calibration clock generating unit configured to output the calibration clock using a code calibration command.
摘要翻译：一种电阻校准代码生成装置，包括：代码校准单元，被配置为在通过代码校准时间控制命令确定的校准时钟的预定周期期间校准并输出电阻校准代码的代码值;以及校准时钟生成单元，使用代码校准命令输出校准时钟。

8. 发明申请

US20090140793A1 INTERNAL VOLTAGE GENERATION CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器内部电压发生电路
公开(公告)号：US20090140793A1
公开(公告)日：2009-06-04
申请号：US12272944
申请日：2008-11-18
申请人： Sang Jin BYEON
发明人： Sang Jin BYEON
IPC分类号： G11C5/14
CPC分类号： G11C5/14
摘要： An internal voltage generation circuit of a semiconductor memory device controls a dead zone voltage, in which the driving unit that supplies a power supply voltage, does not need to operate. An internal voltage having a dead zone is determined by first and second driving signals based on a level of a reference voltage, and by selectively supplying first and second voltages by means of the first and second driving signals.
摘要翻译：半导体存储器件的内部电压产生电路控制提供电源电压的驱动单元不需要操作的死区电压。具有死区的内部电压基于参考电压的电平由第一和第二驱动信号确定，并且通过第一和第二驱动信号选择性地提供第一和第二电压。

9. 发明申请

US20120306566A1 SEMICONDUCTOR APPARATUS AND METHOD FOR CONTROLLING THE SAME 有权
公开(公告)号：US20120306566A1
公开(公告)日：2012-12-06
申请号：US13584473
申请日：2012-08-13
申请人： Sin Hyun JIN , Sang Jin BYEON
发明人： Sin Hyun JIN , Sang Jin BYEON
IPC分类号： G05B1/02
CPC分类号： H03K17/22 , H01L25/065 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus comprises a power-up signal generation section configured to generate a power-up signal, a driver configured to drive and output the power-up signal, and a main circuit block configured to perform predetermined functions in response to an output from the driver, wherein the power-up signal generation section and an input terminal of the driver are connected by a disconnectable element.

10. 发明申请

US20120224441A1 SEMICONDUCTOR MEMORY APPARATUS 审中-公开
标题翻译：半导体存储器
公开(公告)号：US20120224441A1
公开(公告)日：2012-09-06
申请号：US13171885
申请日：2011-06-29
申请人： Jae Bum KO , Sang Jin BYEON
发明人： Jae Bum KO , Sang Jin BYEON
IPC分类号： G11C7/00
CPC分类号： G11C7/1045 , G11C8/10
摘要： Various embodiments of a semiconductor memory apparatus are disclosed. In one exemplary embodiment, a semiconductor memory apparatus may include a page size control unit configured to generate first and second block enable signals having a level corresponding to one of a plurality of row selection signals or one of a plurality of column selection signals based on a page size control signal; a first page block configured to enable a plurality of first memory cells selected by the plurality of row selection signals in response to the first block enable signal, and activate data access of memory cells selected among the plurality of selected first memory cells by the plurality of column selection signals and the option column selection signal; and a second page block configured to enable a plurality of second memory cells selected by the plurality of row selection signals in response to the second block enable signal, and activate data access of memory cells selected among the plurality of selected second memory cells by the plurality of column selection signals and the option column selection signal.
摘要翻译：公开了半导体存储装置的各种实施例。在一个示例性实施例中，半导体存储器设备可以包括页面尺寸控制单元，其被配置为产生具有对应于多个行选择信号中的一个或多个列选择信号中的一个的电平的第一和第二块使能信号，页面尺寸控制信号; 第一页块，其被配置为响应于所述第一块使能信号使能由所述多个行选择信号选择的多个第一存储器单元，并且激活由所述多个选择的第一存储器单元中选择的多个所选择的第一存储器单元中的多个第一存储器单元的数据访问列选择信号和选项列选择信号; 以及第二页块，其被配置为响应于所述第二块使能信号使能由所述多个行选择信号选择的多个第二存储器单元，并且激活由所述多个选择的第二存储器单元中选择的所述多个所选择的第二存储器单元中的多个存储单元的数据访问列选择信号和选项列选择信号。

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