专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08188512B2 Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same 有权
标题翻译：具有负光导特性的锗外延薄膜的生长和使用其的光电二极管
公开(公告)号：US08188512B2
公开(公告)日：2012-05-29
申请号：US12536098
申请日：2009-08-05
申请人： Sang Hoon Kim , Gyung Ock Kim , Dong Woo Suh , Ji Ho Joo
发明人： Sang Hoon Kim , Gyung Ock Kim , Dong Woo Suh , Ji Ho Joo
IPC分类号： H01L31/028 , C03B23/06
CPC分类号： H01L31/1808 , C30B25/10 , C30B25/16 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L31/028 , H01L31/103 , Y02E10/547
摘要： A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.
摘要翻译：提供一种生长具有负光导特性的锗（Ge）外延薄膜和使用其的光电二极管的方法。生长锗（Ge）外延薄膜的方法包括在低温下在硅衬底上生长锗（Ge）薄膜，升高温度以生长锗（Ge）薄膜，并使锗（Ge）在高温下的薄膜，其中每个生长阶段使用减压化学气相沉积（RPCVD）进行。三阶段生长方法能够形成特征在于在基板上减轻应力，降低的穿透位错密度和降低的表面粗糙度的锗（Ge）外延薄膜。

2. 发明申请

US20100144124A1 METHOD OF GROWING PURE Ge THIN FILM WITH LOW THREADING DISLOCATION DENSITY 审中-公开
标题翻译：生产具有低螺旋位错密度的纯薄膜的方法
公开(公告)号：US20100144124A1
公开(公告)日：2010-06-10
申请号：US12536475
申请日：2009-08-05
申请人： Sang Hoon KIM , Dong Woo Suh , Ji Ho Joo , Gyung Ock Kim , Hyun Tak Kim
发明人： Sang Hoon KIM , Dong Woo Suh , Ji Ho Joo , Gyung Ock Kim , Hyun Tak Kim
IPC分类号： H01L21/205
CPC分类号： H01L21/02532 , C30B25/02 , C30B29/08 , H01L21/02381 , H01L21/0262
摘要： Provided is a method of growing a pure germanium (Ge) thin film with low threading dislocation density using reduced pressure chemical vapor deposition (RPCVD), which includes growing a Ge thin film on a silicon (Si) substrate at a low temperature, performing real-time annealing for a short period of time, and growing the annealed Ge thin film at a high temperature. The grown Ge single crystal thin film can overcome conventional problems of generation of a Si—Ge layer due to Si diffusion, and propagation of misfit dislocation to a high-temperature Ge thin film.
摘要翻译：提供了使用减压化学气相沉积（RPCVD）生长具有低穿透位错密度的纯锗（Ge）薄膜的方法，其包括在低温下在硅（Si）衬底上生长Ge薄膜，实现真实短时间退火，并在高温下生长退火的Ge薄膜。生长的Ge单晶薄膜可以克服由于Si扩散而产生Si-Ge层的常规问题，以及错配位错到高温Ge薄膜的传播。

3. 发明申请

US20100133585A1 GROWTH OF GERMANIUM EPITAXIAL THIN FILM WITH NEGATIVE PHOTOCONDUCTANCE CHARACTERISTICS AND PHOTODIODE USING THE SAME 有权
标题翻译：具有负光子性质特征的锗外延薄膜的生长和使用其的光致变色
公开(公告)号：US20100133585A1
公开(公告)日：2010-06-03
申请号：US12536098
申请日：2009-08-05
申请人： Sang Hoon Kim , Gyung Ock Kim , Dong Woo Suh , Ji Ho Joo
发明人： Sang Hoon Kim , Gyung Ock Kim , Dong Woo Suh , Ji Ho Joo
IPC分类号： H01L31/028 , C30B23/06
CPC分类号： H01L31/1808 , C30B25/10 , C30B25/16 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L31/028 , H01L31/103 , Y02E10/547
摘要： A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.
摘要翻译：提供一种生长具有负光导特性的锗（Ge）外延薄膜和使用其的光电二极管的方法。生长锗（Ge）外延薄膜的方法包括在低温下在硅衬底上生长锗（Ge）薄膜，升高温度以生长锗（Ge）薄膜，并使锗（Ge）在高温下的薄膜，其中每个生长阶段使用减压化学气相沉积（RPCVD）进行。三阶段生长方法能够形成特征在于在基板上减轻应力，降低的穿透位错密度和降低的表面粗糙度的锗（Ge）外延薄膜。

4. 发明授权

US07399420B2 Method of fabricating stamper and focusing grating coupler using the same 失效
标题翻译：使用其制造压模和聚焦光栅耦合器的方法
公开(公告)号：US07399420B2
公开(公告)日：2008-07-15
申请号：US10803921
申请日：2004-03-19
申请人： Mun Cheol Paek , Dong Woo Suh , Ho Jun Ryu , Hyeon Bong Pyo , Yong Woo Park
发明人： Mun Cheol Paek , Dong Woo Suh , Ho Jun Ryu , Hyeon Bong Pyo , Yong Woo Park
IPC分类号： B29D11/00 , G02B6/26
CPC分类号： G11B7/263 , B29C59/022 , B29C2059/023 , B29D17/005 , B29L2011/00 , G02B5/1809 , G11B7/261
摘要： Provided are a stamper fabricated by using an embossing master and a focusing grating coupler fabricated by using the stamper, which is applicable to a subminiature pickup head for a mobile optic disk, whereby it is possible to reduce a weight and a volume of the pickup head with a simple process and low cost and to apply for mass production.
摘要翻译：提供一种通过使用通过使用压模制造的压花母版和聚焦光栅耦合器制造的压模，其适用于用于移动光盘的超小型拾取头，由此可以减小拾取头的重量和体积具有工艺简单，成本低廉，适用于批量生产。

5. 发明授权

US06999660B2 Highly efficient focusing waveguide grating coupler using leaky mode 失效
标题翻译：使用泄漏模式的高效聚焦波导光栅耦合器
公开(公告)号：US06999660B2
公开(公告)日：2006-02-14
申请号：US10749349
申请日：2003-12-31
申请人： Yongwoo Park , Yeungjoon Sohn , Mun-Cheol Paek , Dong Woo Suh , Hojun Ryu , Hyeon-Bong Pyo
发明人： Yongwoo Park , Yeungjoon Sohn , Mun-Cheol Paek , Dong Woo Suh , Hojun Ryu , Hyeon-Bong Pyo
IPC分类号： G02B6/34
CPC分类号： G02B6/34 , G02B6/122 , G02B6/124
摘要： Provided is a focusing waveguide grating coupler using a leaky mode which can form single output beam while relieving the dependency on manufacturing processes. The focusing waveguide grating coupler of the present research includes: a substrate having a first refraction index n1; a first core layer having a second refraction index n2, the first core layer being formed on the substrate; a second core layer having a third refraction index n3, the second core layer being formed on the first core layer apart from the first core layer with a space d in between; a first cladding layer having a fourth refraction index n4, the first cladding layer being formed on the second core layer; a second cladding layer having a fifth refraction index n5, the second cladding layer being formed on the first cladding layer and inserted between the first core layer and the second core layer; and a Fresnel lens positioned on the second cladding layer, wherein the refractive indexes satisfy conditions of n5>(n2, n3)>n1 and n5>n4; and light inputted through the first and second core layers to the Fresnel lens as radiated leaky beam by a leaky mode formed according to the conditions, and the leaky beam forms an optical focus by performing single directional coupling.
摘要翻译：提供了一种使用泄漏模式的聚焦波导光栅耦合器，其可以形成单个输出光束，同时减轻对制造工艺的依赖性。本研究的聚焦波导光栅耦合器包括：具有第一折射率n1的衬底; 具有第二折射率n2的第一芯层，所述第一芯层形成在所述基板上; 具有第三折射率n3的第二芯层，所述第二芯层与所述第一芯层分开形成在所述第一芯层上，其间具有空间d; 具有第四折射率n4的第一包层，所述第一包层形成在所述第二芯层上; 具有第五折射率n5的第二包层，所述第二包层形成在所述第一包层上并插入在所述第一芯层和所述第二芯层之间; 和位于第二包覆层上的菲涅尔透镜，其中折射率满足n5>（n2，n3）> n1和n5> n4的条件; 以及通过第一和第二核心层通过根据条件形成的泄漏模式作为辐射泄漏波束通过第一和第二核心层输入到菲涅耳透镜的光，并且通过执行单向耦合来形成光学焦点。

6. 发明授权

US07580336B2 Optical head having a beam input/output coupler on a planar waveguide 有权
标题翻译：光头在平面波导上具有光束输入/输出耦合器
公开(公告)号：US07580336B2
公开(公告)日：2009-08-25
申请号：US11270998
申请日：2005-11-10
申请人： Dong Woo Suh , Yong Woo Park , Mun Cheol Paek , Ho Jun Ryu , Hee Sook Chung , Kwang Yong Kang
发明人： Dong Woo Suh , Yong Woo Park , Mun Cheol Paek , Ho Jun Ryu , Hee Sook Chung , Kwang Yong Kang
IPC分类号： G11B7/135
CPC分类号： G11B7/124
摘要： An optical head has a beam input/output coupler on a planar waveguide and other parts including: a light transmitting element emitting a beam; a planar waveguide formed on a substrate and receiving the beam oscillated from the light transmitting element; a beam input/output coupler integrated as a thin film on a portion of the planar waveguide and receiving the beam through the planar waveguide to transmit the beam vertically toward a disc positioned above the planar waveguide or transmitting the beam reflected from the disc through the planar waveguide; and light receiving elements receiving the beam propagated to the planar waveguide through the beam input/output coupler.
摘要翻译：光头在平面波导上具有光束输入/输出耦合器，其它部分包括：发射光束的光发射元件; 平面波导，形成在基板上并接收从光发射元件振荡的光束; 光束输入/输出耦合器，其在平面波导的一部分上集成为薄膜，并且通过平面波导接收光束，以将光束垂直地传送到位于平面波导上方的盘，或者通过平面波导; 以及接收光束的光接收元件通过光束输入/输出耦合器传播到平面波导。

7. 发明申请

US20060125046A1 Integrated inductor and method of fabricating the same 审中-公开
标题翻译：集成电感及其制造方法
公开(公告)号：US20060125046A1
公开(公告)日：2006-06-15
申请号：US11237237
申请日：2005-09-28
申请人： Hyun Cheol Bae , Dong Woo Suh , Jin Yeong Kang
发明人： Hyun Cheol Bae , Dong Woo Suh , Jin Yeong Kang
IPC分类号： H01L29/00 , H01F5/00
CPC分类号： H01L28/10 , H01F17/0013 , H01L23/5227 , H01L27/08 , H01L2924/0002 , H01L2924/00
摘要： Provided are an integrated inductor and a method of manufacturing the same. The integrated inductor includes: a silicon on insulator (SOI) wafer on which a substrate, an oxide layer, and an active layer are stacked; a first metal interconnection formed in a predetermined region on the SOI wafer; a second metal interconnection electrically connected to the first metal interconnection; and a first interlayer insulating layer formed between the first and second metal interconnections so as to make the first and second metal interconnections spaced from each other by a constant interval, so that the quality factor Q can be enhanced, a frequency where the maximum quality factor Q occurs can be adjusted to a desired band, a leakage current to the substrate can be prevented from occurring, and heat within the inductor can be suppressed from occurring.
摘要翻译：提供一种集成电感器及其制造方法。集成电感器包括：绝缘体上硅（SOI）晶片，其上堆叠衬底，氧化物层和有源层; 形成在SOI晶片上的预定区域中的第一金属互连; 电连接到第一金属互连的第二金属互连; 以及形成在所述第一和第二金属互连之间的第一层间绝缘层，以使所述第一和第二金属互连彼此间隔一定的间隔，从而可以提高质量因子Q，其中最大品质因子可以将Q发生调整到期望的频带，可以防止发生对基板的泄漏电流，并且可以抑制电感器内的发热。

8. 发明授权

US06980075B2 Inductor having high quality factor and unit inductor arranging method thereof 有权
标题翻译：具有高品质因数和单位电感器排列方法的电感器
公开(公告)号：US06980075B2
公开(公告)日：2005-12-27
申请号：US10714287
申请日：2003-11-13
申请人： Bongki Mheen , Seok-bong Hyun , Dong Woo Suh , Jin-Yeong Kang
发明人： Bongki Mheen , Seok-bong Hyun , Dong Woo Suh , Jin-Yeong Kang
IPC分类号： H01F17/00 , H01L21/02 , H01L27/08 , H01F5/00
CPC分类号： H01L28/10 , H01F17/0006 , H01L27/08
摘要： A method for arranging unit inductors of an inductor having metal wiring that can make a full use of self-inductance and mutual-inductance which are determined based on the proportion of the area of an unit inductor and the proportion of the overlapping area with another unit inductor, and an inductor adopting the unit inductor arranging method. The unit inductor arranging method, wherein the inductor includes a first unit inductor, a second inductor and a third inductor, and self-inductance magnitudes of the unit inductors are in the order of the self-inductance of the third inductor>the self-inductance of the second inductor>the self-inductance of the first inductor, includes the steps of: a) coupling one end of the second unit inductor is connected to one end of the first unit inductor and one end of the third unit inductor to the other end of the first unit inductor in order to arrange the first unit inductor between the second and third unit inductors of which mutual-inductance has the largest value in mutual-inductances between the unit inductors; b) coupling the second unit inductor to a first external terminal; and c) coupling the third unit inductor to a second external terminal.
摘要翻译：一种用于布置具有金属布线的电感器的单元电感器的方法，该电感器可以充分利用基于单位电感器的面积的比例和与另一单元的重叠区域的比例确定的自感和互感电感器和采用单元电感器布置方法的电感器。单元电感器布置方法，其中电感器包括第一单元电感器，第二电感器和第三电感器，并且单位电感器的自感大小等于第三电感器的自感量>自感的第二电感器的自感包括以下步骤：a）耦合第二单元电感器的一端连接到第一单元电感器的一端并且将第三单元电感器的一端连接到另一端从而将第一单元电感器布置在单元电感器之间的互感中互感具有最大值的第二和第三单元电感器之间; b）将第二单元电感器耦合到第一外部端子; 以及c）将所述第三单元电感器耦合到第二外部端子。

9. 发明授权

US07899285B2 Leaky surface-plasmon mode directional coupler and polarization detection module for magneto-optical pickup head using the same 失效
标题翻译：泄漏表面等离子体模式定向耦合器和偏振检测模块用于磁光拾取头
公开(公告)号：US07899285B2
公开(公告)日：2011-03-01
申请号：US10794143
申请日：2004-03-04
申请人： Yongwoo Park , Hyeon Bong Pyo , Dong Woo Suh , Yeungjoon Sohn , Hojun Ryu , Mun Cheol Paek
发明人： Yongwoo Park , Hyeon Bong Pyo , Dong Woo Suh , Yeungjoon Sohn , Hojun Ryu , Mun Cheol Paek
IPC分类号： G02B6/26
CPC分类号： G11B11/10543 , B82Y20/00 , G02B6/1226 , G11B7/124
摘要： A leaky plasmon mode directional coupler and a polarization detection module for a magneto-optical pickup head, which uses the leaky plasmon mode directional coupler, are provided. The leaky plasmon mode directional coupler is manufactured by integrating a planar waveguide and a leaky plasmon mode waveguide, which share a cladding layer with each other, into one body. The polarization detection module includes the leaky plasmon mode directional coupler, a first photo diode, which is formed on the leaky plasmon mode directional coupler, and a second photo diode, which is located at an output port of the planar waveguide.
摘要翻译：提供一种使用泄漏等离子体激元模式定向耦合器的漏磁等离子体模式定向耦合器和用于磁光拾取头的偏振检测模块。泄漏等离子体模式定向耦合器通过将平面波导和彼此共享包层的泄漏等离子体模式波导集成为一体来制造。偏振检测模块包括漏电等离子体模式定向耦合器，形成在泄漏等离子体激元模式定向耦合器上的第一光电二极管和位于平面波导的输出端口处的第二光电二极管。

10. 发明授权

US07283705B2 Planar focusing grating coupler 失效
标题翻译：平面聚焦光栅耦合器
公开(公告)号：US07283705B2
公开(公告)日：2007-10-16
申请号：US10913417
申请日：2004-08-09
申请人： Mun Cheol Paek , Yeung Joon Sohn , Dong Woo Suh , Ho Jun Ryu , Hyeon Bong Pyo , Yong Woo Park
发明人： Mun Cheol Paek , Yeung Joon Sohn , Dong Woo Suh , Ho Jun Ryu , Hyeon Bong Pyo , Yong Woo Park
IPC分类号： G02B6/34 , G02B6/00
CPC分类号： G11B7/1353 , G02B6/124
摘要： Provided is a planar focusing grating coupler, comprising: a light waveguide including a cladding layer and a core layer formed on a substrate and maintaining incident laser light in a single mode; and a focusing grating coupler formed to have a predetermined grating pitch at a certain area over the core layer, wherein the light using to the light waveguide forms a focal point with the grating layer in the direction perpendicular to the focusing grating coupler, whereby an ultra small pickup head for a mobile optical disk can be used.
摘要翻译：提供一种平面聚焦光栅耦合器，包括：包括覆层的光波导和形成在基板上的芯层，并将入射激光保持在单一模式; 以及聚焦光栅耦合器，其形成为在芯层上的特定区域具有预定的光栅间距，其中使用于光波导的光在垂直于聚焦光栅耦合器的方向上形成具有光栅层的焦点，由此，可以使用用于移动光盘的小拾取头。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式