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    • 6. 发明申请
    • Nitride semiconductor light emitting device array
    • 氮化物半导体发光元件阵列
    • US20080012030A1
    • 2008-01-17
    • US11819785
    • 2007-06-29
    • Sang Ho YoonKyeong Ik Min
    • Sang Ho YoonKyeong Ik Min
    • H01L33/00
    • H01L33/24
    • A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures.
    • 一种氮化物半导体发光器件阵列,其包括形成在第一导电性低氮化物半导体层上的介电层,具有多个窗口。 多个六边形金字塔发光结构中的每一个从通过每个窗户露出的第一导电性下氮化物半导体层的表面生长到介电层的窗口的外围区域上。 六角锥形发光结构中的每一个包括依次形成的第一导电性上氮化物半导体层,有源层和第二导电氮化物半导体层。 窗口设置成三角形布置,使得相邻的六角锥形发光结构的侧表面彼此面对。 此外,相邻的六角锥形发光结构的基底之间的距离小于相邻六边形金字塔发光结构的窗口的中心之间的间隔的0.3倍。
    • 7. 发明授权
    • Nitride semiconductor light emitting device array
    • 氮化物半导体发光元件阵列
    • US08587005B2
    • 2013-11-19
    • US13093469
    • 2011-04-25
    • Sang Ho YoonKyeong Ik Min
    • Sang Ho YoonKyeong Ik Min
    • H01L33/20
    • H01L33/24
    • A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures.
    • 一种氮化物半导体发光器件阵列,其包括形成在第一导电性低氮化物半导体层上的介电层,具有多个窗口。 多个六边形金字塔发光结构中的每一个从通过每个窗户露出的第一导电性下氮化物半导体层的表面生长到介电层的窗口的外围区域上。 六角锥形发光结构中的每一个包括依次形成的第一导电性上氮化物半导体层,有源层和第二导电氮化物半导体层。 窗口设置成三角形布置,使得相邻的六角锥形发光结构的侧表面彼此面对。 此外,相邻的六角锥形发光结构的基底之间的距离小于相邻六边形金字塔发光结构的窗口的中心之间的间隔的0.3倍。
    • 10. 发明授权
    • Semiconductor laser diode with higher-order mode absorption layers
    • 具有高阶模式吸收层的半导体激光二极管
    • US07095769B2
    • 2006-08-22
    • US10812029
    • 2004-03-30
    • Sang Ho YoonGueorgui PakIn Eung Kim
    • Sang Ho YoonGueorgui PakIn Eung Kim
    • H01S3/098H01S5/20H01S5/00
    • G11B7/127H01S5/2004H01S5/2022H01S5/2206H01S5/2231H01S5/3211H01S5/3216
    • A semiconductor laser diode capable of achieving an improvement in kink level and an improvement in catastrophic optical damage (COD) level. The semiconductor laser diode includes a first-conductivity type semiconductor substrate, a first-conductivity type clad layer formed over the substrate, an active layer formed over the first-conductivity type clad layer, a second-conductivity type clad layer formed over the active layer, and provided with a ridge, and a light confining layer formed on the second-conductivity type clad layer, and made of a first-conductivity type semiconductor material, the light confining layer including higher-order mode absorption layers having an energy band gap lower than optical energy produced in the active layer, and refractive index control layers having a refractive index lower than that of the higher-order mode absorption layers. The higher-order mode absorption layers and refractive index control layers are laminated in an alternate manner.
    • 能够实现扭结水平提高和灾难性光学损伤(COD)水平改善的半导体激光二极管。 半导体激光二极管包括第一导电型半导体衬底,形成在衬底上的第一导电型覆盖层,形成在第一导电型覆盖层上的有源层,形成在有源层上的第二导电型覆盖层 并且设置有脊,以及形成在第二导电型覆盖层上并由第一导电型半导体材料制成的限光层,所述光限制层包括具有较低能带隙的高阶模吸收层 比在有源层中产生的光能量和折射率低于高阶模吸收层的折射率控制层。 以交替的方式层叠高阶模吸收层和折射率控制层。