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1. 发明授权

US07095769B2 Semiconductor laser diode with higher-order mode absorption layers 有权
标题翻译：具有高阶模式吸收层的半导体激光二极管
公开(公告)号：US07095769B2
公开(公告)日：2006-08-22
申请号：US10812029
申请日：2004-03-30
申请人： Sang Ho Yoon , Gueorgui Pak , In Eung Kim
发明人： Sang Ho Yoon , Gueorgui Pak , In Eung Kim
IPC分类号： H01S3/098 , H01S5/20 , H01S5/00
CPC分类号： G11B7/127 , H01S5/2004 , H01S5/2022 , H01S5/2206 , H01S5/2231 , H01S5/3211 , H01S5/3216
摘要： A semiconductor laser diode capable of achieving an improvement in kink level and an improvement in catastrophic optical damage (COD) level. The semiconductor laser diode includes a first-conductivity type semiconductor substrate, a first-conductivity type clad layer formed over the substrate, an active layer formed over the first-conductivity type clad layer, a second-conductivity type clad layer formed over the active layer, and provided with a ridge, and a light confining layer formed on the second-conductivity type clad layer, and made of a first-conductivity type semiconductor material, the light confining layer including higher-order mode absorption layers having an energy band gap lower than optical energy produced in the active layer, and refractive index control layers having a refractive index lower than that of the higher-order mode absorption layers. The higher-order mode absorption layers and refractive index control layers are laminated in an alternate manner.
摘要翻译：能够实现扭结水平提高和灾难性光学损伤（COD）水平改善的半导体激光二极管。半导体激光二极管包括第一导电型半导体衬底，形成在衬底上的第一导电型覆盖层，形成在第一导电型覆盖层上的有源层，形成在有源层上的第二导电型覆盖层并且设置有脊，以及形成在第二导电型覆盖层上并由第一导电型半导体材料制成的限光层，所述光限制层包括具有较低能带隙的高阶模吸收层比在有源层中产生的光能量和折射率低于高阶模吸收层的折射率控制层。以交替的方式层叠高阶模吸收层和折射率控制层。

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