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    • 2. 发明授权
    • Process for preparing hydroxylated aromatics by hydrogen and oxygen
    • 通过氢气和氧气制备羟基化芳烃的方法
    • US06191318B1
    • 2001-02-20
    • US09332135
    • 1999-06-14
    • Sang Eon ParkChul Wee LeeJong San ChangYong Ki Park
    • Sang Eon ParkChul Wee LeeJong San ChangYong Ki Park
    • C07C3700
    • C07C37/58Y02P20/52C07C39/04
    • The present invention relates to a process for preparing hydroxylated aromatics by using hydrogen and oxygen and more particularly, to a process for preparing hydroxylated aromatics by using hydrogen and oxygen with a two-component heterogeneous catalyst. One component consists of porous catalyst containing one of Group VIII B transition metals such as Pd, Pt, Au and Cu, and hydrogen transfer organic compounds such as anthraquinone. The other component consists of a catalyst containing a transition metal selected from Ti, V, and Sn with tetrahedral coordination geometry. The main advantages of this new catalytic system are to 1) overcome the drawbacks of liquid phase oxidation using conventional homogeneous catalysts, 2) avoid use of expensive hydrogen peroxide as an oxidant, and 3) improve the selectivity of the reaction.
    • 本发明涉及通过使用氢和氧制备羟基化芳族化合物的方法,更具体地说,涉及通过使用氢和氧与双组分多相催化剂制备羟基化芳族化合物的方法。 一种组分由含有ⅧB族过渡金属如Pd,Pt,Au和Cu之一的多孔催化剂和氢转移有机化合物如蒽醌组成。 另一个组分由含有选自Ti,V和Sn的过渡金属和四面体配位几何形状的催化剂组成。 这种新催化体系的主要优点是1)克服使用常规均相催化剂的液相氧化的缺点,2)避免使用昂贵的过氧化氢作为氧化剂,3)提高反应的选择性。
    • 3. 发明授权
    • Method of manufacturing single crystal wire and other single crystal metallic articles
    • 单晶线及其他单晶金属制品的制造方法
    • US08663388B2
    • 2014-03-04
    • US12436754
    • 2009-05-06
    • Se Young JeongChae Ryong ChoSang Eon ParkSung Kyu Kim
    • Se Young JeongChae Ryong ChoSang Eon ParkSung Kyu Kim
    • C30B11/00
    • C30B15/00C22B11/02C30B11/00C30B11/14C30B15/36C30B29/02C30B29/62
    • Disclosed are a single crystal wire and other single crystal articles, and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using metal crystal as a seed by Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and machining the cut single crystal and producing a wire or other articles such as a ring. In the method, the grown metal single crystal is cut into a disc-shaped piece by electric discharge machining. The piece is transformed into a single crystal wire or other articles by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant, or a wire for high-quality cables for audio and video systems. Also, the single crystal formed into the disc-shaped piece by electric discharge machining can be used as a substrate and a target for deposition.
    • 公开了单晶线及其它单晶制品及其制造方法。 该方法包括以下步骤:将生长坩埚放入至少一种选自金,铜,银,铝和镍的金属; 加热和熔化置于生长坩埚中的金属; 使用Czochralski或Bridgman方法生长使用金属晶体作为种子的单晶; 通过放电加工切割生长的单晶; 并加工切割的单晶并生产线或其它物品如环。 在该方法中,通过放电加工将成长的金属单晶切割成圆盘状的片。 该片通过线切割放电加工转换为单晶线或其他物品,单晶线可用作音频和视频系统的高品质电缆的环形,吊坠或线材。 此外,通过放电加工形成为盘状片的单晶可以用作基板和沉积靶。
    • 7. 发明授权
    • Method for preparation of cross-condensed compound between amino acids and aminoalkylsilane having alkoxy groups using microwave
    • 使用微波制备具有烷氧基的氨基酸和氨基烷基硅烷之间交联的化合物的方法
    • US08003815B2
    • 2011-08-23
    • US12739598
    • 2008-02-22
    • Ik Mo LeeDong Hwan LeeHo Sub KimSang Eon Park
    • Ik Mo LeeDong Hwan LeeHo Sub KimSang Eon Park
    • C07F7/04
    • C07F7/1892
    • The present invention provides a method of preparing a cross-condensed compound of an amino-acid derivative and (aminoalkyl)trialkoxysilane using microwave, including: irradiating and heating an amino-acid derivative and (aminoalkyl)trialkoxysilane in a microwave reactor to obtain a reaction product (step 1); and refining the reaction product obtained in the step 1 by removing an unreacted solid material from the reaction product and then leaving the reaction product at room temperature under vacuum to remove excess (aminoalkyl)trialkoxysilane therefrom (step 2). According to the method, since a cross-condensation reaction is performed using microwave, unlike a conventional condensation reaction, economic efficiency is increased due to no catalyst, short reaction time and no solvent. Further, the yield and selectivity of products is increased, and the condensation reaction can be environment-friendly performed because a solvent which can badly influence the environment may not be used.
    • 本发明提供了使用微波制备氨基酸衍生物和(氨基烷基)三烷氧基硅烷的交联稠合化合物的方法,包括:在微波反应器中照射加热氨基酸衍生物和(氨基烷基)三烷氧基硅烷,得到反应 产品(步骤1); 并通过从反应产物中除去未反应的固体物质,然后在真空下将反应产物在室温下离心以从其中除去过量的(氨基烷基)三烷氧基硅烷,从而精制步骤1中获得的反应产物(步骤2)。 根据该方法,由于使用微波进行交联缩合反应,与常规的缩合反应不同,由于没有催化剂,反应时间短,无溶剂,经济效率提高。 此外,产物的产率和选择性提高,并且缩合反应可以是环境友好的,因为可能不会使用可能严重影响环境的溶剂。
    • 8. 发明申请
    • METHOD OF MANUFACTURING SINGLE CRYSTAL WIRE
    • 制造单晶线的方法
    • US20090211516A1
    • 2009-08-27
    • US12436754
    • 2009-05-06
    • Se Young JeongChae Ryong ChoSang Eon ParkSung Kyu Kim
    • Se Young JeongChae Ryong ChoSang Eon ParkSung Kyu Kim
    • C30B15/14
    • C30B15/00C22B11/02C30B11/00C30B11/14C30B15/36C30B29/02C30B29/62
    • Disclosed are a single crystal wire and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using the metal crystal as a seed by the Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and forming the cut single crystal into a wire. In the method, the grown metal single crystal is formed into a disc-shaped piece by electric discharge machining. The piece is formed into a single crystal wire by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant or a wire within a high-quality cable making a connection in audio and video systems. Also, the single crystal formed into the disc-shaped piece by electric discharge machining can be used as a substrate and a target for deposition.
    • 公开了一种单晶线及其制造方法。 该方法包括以下步骤:将生长坩埚放入至少一种选自金,铜,银,铝和镍的金属; 加热和熔化置于生长坩埚中的金属; 使用Czochralski或Bridgman方法生长使用金属晶体作为种子的单晶; 通过放电加工切割生长的单晶; 并将切割的单晶形成线。 在该方法中,通过放电加工将生长的金属单晶形成为盘状片。 该片通过线切割放电加工形成单晶线,并且单晶线可以用作在音频和视频系统中连接的高质量电缆中的环,吊线或线。 此外,通过放电加工形成为盘状片的单晶可以用作基板和沉积靶。