专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20160172044A1 Method To Recover Cycling Damage And Improve Long Term Data Retention 有权
标题翻译：恢复循环伤害并改善长期数据保留的方法
公开(公告)号：US20160172044A1
公开(公告)日：2016-06-16
申请号：US14565729
申请日：2014-12-10
申请人： SanDisk Technologies Inc.
发明人： Ching-Huang Lu , Zhengyi Zhang , Wei Zhao , Yingda Dong , Jian Chen
IPC分类号： G11C16/16 , G11C16/04 , G11C16/32 , G11C16/34
CPC分类号： G11C16/16 , G11C16/0466 , G11C16/0483 , G11C16/32 , G11C16/3431 , G11C16/3459 , G11C16/349 , G11C16/3495
摘要： Techniques for reversing damage caused by program-erase cycles in charge-trapping memory to improve long term data retention. A recovery process improves the data retention of a block of memory cells by programming the memory cells to a relatively high threshold voltage and enforcing a time period of several minutes or hours in which the memory cells are inactive and remain at the relatively high Vth levels. Damage such as traps in the memory cells is essentially healed or annealed out during this inactive period. All of the memory cells can be healed at the same time and by relatively equal amounts. At the conclusion of the recovery process, the block is returned to a pool of available blocks. In one approach, an amount of recovery is measured and the period of inactivity is continued for an amount of time which is based on the amount of recovery.
摘要翻译：用于在电荷捕获存储器中逆转由编程擦除周期引起的损坏以改善长期数据保持的技术。恢复过程通过将存储器单元编程到相对较高的阈值电压并且执行存储器单元不活动并保持在相对高的Vth电平的几分钟或数小时的时间段来改善存储器单元块的数据保持。在这个不活跃的时期，诸如记忆单元中的陷阱的损伤基本上被愈合或退火。所有的记忆细胞可以同时和相对相等的量治愈。在恢复过程结束时，块将返回到可用块池。在一种方法中，测量恢复量，并且基于回收量，持续不活动的时间持续一段时间。

2. 发明授权

US09378832B1 Method to recover cycling damage and improve long term data retention 有权
标题翻译：恢复循环损伤并改善长期数据保留的方法
公开(公告)号：US09378832B1
公开(公告)日：2016-06-28
申请号：US14565729
申请日：2014-12-10
申请人： SanDisk Technologies Inc.
发明人： Ching-Huang Lu , Zhengyi Zhang , Wei Zhao , Yingda Dong , Jian Chen
IPC分类号： G11C16/16 , G11C16/34 , G11C16/04 , G11C16/32
CPC分类号： G11C16/16 , G11C16/0466 , G11C16/0483 , G11C16/32 , G11C16/3431 , G11C16/3459 , G11C16/349 , G11C16/3495
摘要： Techniques for reversing damage caused by program-erase cycles in charge-trapping memory to improve long term data retention. A recovery process improves the data retention of a block of memory cells by programming the memory cells to a relatively high threshold voltage and enforcing a time period of several minutes or hours in which the memory cells are inactive and remain at the relatively high Vth levels. Damage such as traps in the memory cells is essentially healed or annealed out during this inactive period. All of the memory cells can be healed at the same time and by relatively equal amounts. At the conclusion of the recovery process, the block is returned to a pool of available blocks. In one approach, an amount of recovery is measured and the period of inactivity is continued for an amount of time which is based on the amount of recovery.
摘要翻译：用于在电荷捕获存储器中逆转由编程擦除周期引起的损坏以改善长期数据保持的技术。恢复过程通过将存储器单元编程到相对较高的阈值电压并且执行存储器单元不活动并保持在相对高的Vth电平的几分钟或数小时的时间段来改善存储器单元块的数据保持。在这个不活跃的时期，诸如记忆单元中的陷阱的损伤基本上被愈合或退火。所有的记忆细胞可以同时和相对相等的量治愈。在恢复过程结束时，块将返回到可用块池。在一种方法中，测量恢复量，并且基于回收量，持续不活动的时间持续一段时间。

3. 发明授权

US09299450B1 Adaptive increase in control gate voltage of a dummy memory cell to compensate for inadvertent programming 有权
标题翻译：自适应增加虚拟存储器单元的控制栅极电压以补偿无意的编程
公开(公告)号：US09299450B1
公开(公告)日：2016-03-29
申请号：US14612601
申请日：2015-02-03
申请人： SanDisk Technologies Inc.
发明人： Liang Pang , Yingda Dong , Zhengyi Zhang
IPC分类号： G11C11/34 , G11C16/34 , G11C16/04 , G11C16/14 , G11C16/26
CPC分类号： G11C16/3427 , G11C7/14 , G11C11/5635 , G11C11/5642 , G11C16/0483 , G11C16/14 , G11C16/26 , G11C16/3431 , G11C16/349 , G11C2211/5621 , G11C2211/565
摘要： A NAND string includes dummy memory cells between data memory cells and source-side and drain-side select gates. A gradual increase in threshold voltage (Vth) for the dummy memory cells which occurs due to program-erase cycles is detected by read operations at an initial upper checkpoint voltage. If the Vth has increased beyond the checkpoint, the control gate voltage of the dummy memory cells is increased during subsequent programming operations. This maintains a relatively constant channel voltage in an unselected NAND string under the dummy memory cells during a program voltage. Disturbs which can be caused by an increase in a channel voltage gradient are therefore avoided. The dummy memory cells can be periodically read at successively higher checkpoint voltages and the control gate voltage repeatedly increased. If the control gate voltage reaches a maximum allowed level, the dummy memory cells can be erased and reprogrammed.
摘要翻译： NAND串包括数据存储单元与源极侧和漏极侧选择栅之间的虚拟存储单元。通过在初始上检查点电压下的读取操作来检测由于编程擦除周期而发生的伪存储单元的阈值电压（Vth）的逐渐增加。如果Vth已经超过检查点，则在随后的编程操作期间，虚拟存储器单元的控制栅极电压增加。这在编程电压期间在虚拟存储器单元下的未选择的NAND串中保持相对恒定的沟道电压。因此可以避免由通道电压梯度的增加引起的干扰。虚拟存储器单元可以在连续更高的检查点电压下周期性地读取，并且控制栅极电压重复地增加。如果控制栅极电压达到最大允许电平，则可以擦除并重新编程虚拟存储单元。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式