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1. 发明授权

US09678832B2 Storage module and method for on-chip copy gather 有权
公开(公告)号：US09678832B2
公开(公告)日：2017-06-13
申请号：US14595939
申请日：2015-01-13
申请人： SanDisk Technologies Inc.
发明人： Daniel E. Tuers , Abhijeet Manohar , Sergei Gorobets
IPC分类号： G06F11/10 , G06F11/07 , G06F3/06 , G11C16/08 , G11C29/04 , G11C7/10
CPC分类号： G06F11/1068 , G06F3/0619 , G06F3/064 , G06F3/065 , G06F3/0673 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/1048 , G06F11/1076 , G11C7/1009 , G11C16/08 , G11C2029/0411 , G11C2207/2236
摘要： A storage module and method for on-chip copy gather are provided. In one embodiment, a storage module is provided with a memory comprising a plurality of word lines and a plurality of data latches. The memory copies data from a first word line into a first data latch and copies data from a second word line into a second data latch. The memory then copies only some of the data from the first data latch and only some of the data from the second data latch into a third data latch. After that, the memory copies the data from the third data latch to a third word line. In another embodiment, a storage module is provided comprising a memory and an on-chip copy gather module. Other embodiments are provided.

2. 发明授权

US09455038B2 Storage module and method for using healing effects of a quarantine process 有权
标题翻译：使用隔离过程的治疗效果的存储模块和方法
公开(公告)号：US09455038B2
公开(公告)日：2016-09-27
申请号：US14510945
申请日：2014-10-09
申请人： SanDisk Technologies Inc.
发明人： Daniel E. Tuers , Dana Lee , Henry Chin , Abhijeet Manohar
IPC分类号： G11C27/00 , G11C16/04 , G11C11/56 , G11C29/44 , G11C16/34
CPC分类号： G11C16/0466 , G11C11/5671 , G11C16/3404 , G11C16/3418 , G11C16/349 , G11C29/4401
摘要： A storage module and method are provided for using healing effects of a quarantine process. In one embodiment, a storage module is provided comprising a controller and a memory. The controller is configured to identify a set of memory cells in the memory that contains a bit error rate above a threshold, wherein the bit error rate is above the threshold due to trapped charge in dielectrics of the memory cells. The controller is also configured to quarantine the set of memory cells for a period of time, wherein while the set of memory cells is quarantined, heat generated by the storage module anneals the set of memory cells to at least partially remove the trapped charge.
摘要翻译：提供了一种使用隔离过程的治疗效果的存储模块和方法。在一个实施例中，提供了包括控制器和存储器的存储模块。控制器被配置为识别存储器中的一组存储器单元，其中存储器单元包含高于阈值的误码率，其中由于存储器单元的电介质中的俘获电荷，误码率高于阈值。控制器还被配置为隔离一段时间的存储器单元，其中当存储器单元组被隔离时，由存储模块产生的热量使该组存储器单元退回至少部分地去除被捕获的电荷。

3. 发明授权

US09436549B2 Storage module and method for improved error correction by detection of grown bad bit lines 有权
标题翻译：存储模块和方法，用于通过检测生长的坏位线来改进纠错
公开(公告)号：US09436549B2
公开(公告)日：2016-09-06
申请号：US14502738
申请日：2014-09-30
申请人： SanDisk Technologies Inc.
发明人： Daniel E. Tuers , Abjiheet Manohar
IPC分类号： G06F11/10 , G06F11/07 , H03M13/11 , H03M13/03 , H03M13/37 , G11C16/26 , H03M13/15 , H03M13/45 , H03M13/00
CPC分类号： G06F11/1076 , G06F11/1012 , G11C29/025 , G11C29/42 , G11C29/4401 , G11C29/52 , G11C2029/0403 , G11C2029/0409 , G11C2029/0411 , G11C2029/1208 , G11C2029/4402 , H03M13/1102 , H03M13/1111 , H03M13/152 , H03M13/3723 , H03M13/451 , H03M13/6325
摘要： In one embodiment, a storage module comprises a controller and a memory having a plurality of bit lines. The controller detects an uncorrectable error in a code word read from the memory, determines location(s) of grown bad bit line(s) that contributed to the error in the code word being uncorrectable, and uses the determined location(s) of the grown bad bit line(s) to attempt to correct the error in the code word.
摘要翻译：在一个实施例中，存储模块包括控制器和具有多个位线的存储器。控制器检测从存储器读取的代码字中的不可校正错误，确定有助于代码字中的错误是不可校正的生长坏位线的位置，并使用确定的位置生成坏的位线来尝试纠正代码字中的错误。

4. 发明申请

US20160225461A1 Memory System and Method for Reducing Read Disturb Errors 有权
标题翻译：用于减少读取干扰的存储器系统和方法
公开(公告)号：US20160225461A1
公开(公告)日：2016-08-04
申请号：US14675107
申请日：2015-03-31
申请人： SanDisk Technologies Inc.
发明人： Daniel E. Tuers , Abhijeet Manohar , Nicholas Thomas , Jonathan Hsu
IPC分类号： G11C16/34 , G11C11/56 , G11C16/26 , G11C14/00
CPC分类号： G11C16/3427 , G11C11/5642 , G11C16/26 , G11C16/3431
摘要： A memory system and method for reducing read disturb errors are disclosed. In one embodiment, a memory system is provided comprising a plurality of blocks of memory and a controller. The controller is configured to detect a read disturb error in a block, identify data that caused the read disturb error, and move the data that caused the read disturb error to a block with a higher read endurance. This can be done by assigning read counters to blocks to determine frequently-read data, and storing that data in a separate block until it is less frequently read and will likely not cause additional read disturb errors.
摘要翻译：公开了一种用于减少读扰扰误差的存储系统和方法。在一个实施例中，提供了包括多个存储器块和控制器的存储器系统。控制器被配置为检测块中的读取干扰错误，识别导致读取干扰错误的数据，并将引起读取干扰错误的数据移动到具有较高读取耐久性的块。这可以通过将读计数器分配给块来确定频繁读取的数据，并将该数据存储在单独的块中，直到其被更少地读取并且可能不会引起额外的读取干扰错误。

5. 发明申请

US20160054937A1 TEMPERATURE ACCELERATED STRESS TIME 有权
标题翻译：温度加速应力时间
公开(公告)号：US20160054937A1
公开(公告)日：2016-02-25
申请号：US14510771
申请日：2014-10-09
申请人： SanDisk Technologies Inc.
发明人： Daniel E. Tuers , Dana Lee , Henry Chin , Abhijeet Manohar
IPC分类号： G06F3/06
CPC分类号： G11C16/3495 , G11C7/04
摘要： A memory system or flash card may be exposed to elapsed time or increased temperature conditions which may degrade the memory. For example, extended time periods or high temperature conditions may hinder data retention in a memory device. An estimate of elapsed time and temperature conditions may be useful for memory management. An algorithm that periodically identifies one or more sentinel blocks in the memory device and measures the data retention shift in those sentinel blocks can calculate a scalar value that approximates the combined effect of elapsed time and/or temperature conditions.
摘要翻译：存储器系统或闪存卡可能暴露于经过时间或升高的温度条件，这可能降低存储器。例如，延长的时间段或高温条件可能阻碍存储器设备中的数据保留。经过的时间和温度条件的估计可能对于存储器管理是有用的。周期性地识别存储器设备中的一个或多个前哨块并且测量那些哨兵块中的数据保持位移的算法可以计算近似经过的时间和/或温度条件的组合效应的标量值。

6. 发明授权

US09905314B2 Storage module and method for datapath bypass 有权
公开(公告)号：US09905314B2
公开(公告)日：2018-02-27
申请号：US14510892
申请日：2014-10-09
申请人： SanDisk Technologies Inc.
发明人： Daniel E. Tuers , Yoav Weinberg , Yuri Ryabinin
IPC分类号： G11C29/00 , G11C29/52 , G06F11/10 , G11C29/04
CPC分类号： G11C29/52 , G06F11/1048 , G11C2029/0411
摘要： A storage module and method for datapath bypass are disclosed. In one embodiment, a storage module begins to perform a read operation that reads a set of code words from the memory and attempts to perform an error detection and correction operation on one of the read code words. In response to determining that the code word has an uncorrectable error, the storage module reads the other code words in the set but bypasses the error detection and correction operation on those other code words. The code word that had the uncorrectable error and the other code words are re-read, wherein at least the code word with the uncorrectable error is re-read with a different read condition. The storage module then attempts to perform the error detection and correction operation on the re-read code words. Other embodiments are provided.

7. 发明授权

US09792046B2 Storage module and method for processing an abort command 有权
公开(公告)号：US09792046B2
公开(公告)日：2017-10-17
申请号：US14448762
申请日：2014-07-31
申请人： SanDisk Technologies Inc.
发明人： Girish Desai , Daniel E. Tuers
IPC分类号： G06F3/06 , G06F9/30
CPC分类号： G06F3/061 , G06F3/0634 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F9/30076
摘要： A storage module and method for virtual abort are disclosed. In one embodiment, a virtual abort of a read command is provided. The read command triggers a read operation that comprises reading data from the storage module's memory, processing the data by at least one processing module as the data moves along a data path from the memory to the storage module's host interface module, and then providing the data to a host via the host interface module. When an abort command is received, the storage module allows the data that is read from the memory to be processed by the at least one processing module as the data moves along the data path to the host interface module but prevents the host interface module from providing the data to the host. In another embodiment, a virtual abort of a write command is provided.

8. 发明授权

US09361030B2 Temperature accelerated stress time 有权
标题翻译：温度加速应力时间
公开(公告)号：US09361030B2
公开(公告)日：2016-06-07
申请号：US14510771
申请日：2014-10-09
申请人： SanDisk Technologies Inc.
发明人： Daniel E. Tuers , Dana Lee , Henry Chin , Abhijeet Manohar
IPC分类号： G06F12/00 , G06F3/06
CPC分类号： G11C16/3495 , G11C7/04
摘要： A memory system or flash card may be exposed to elapsed time or increased temperature conditions which may degrade the memory. For example, extended time periods or high temperature conditions may hinder data retention in a memory device. An estimate of elapsed time and temperature conditions may be useful for memory management. An algorithm that periodically identifies one or more sentinel blocks in the memory device and measures the data retention shift in those sentinel blocks can calculate a scalar value that approximates the combined effect of elapsed time and/or temperature conditions.
摘要翻译：存储器系统或闪存卡可能暴露于经过时间或升高的温度条件，这可能降低存储器。例如，延长的时间段或高温条件可能阻碍存储器设备中的数据保留。经过的时间和温度条件的估计可能对于存储器管理是有用的。周期性地识别存储器设备中的一个或多个前哨块并且测量那些哨兵块中的数据保持位移的算法可以计算近似经过的时间和/或温度条件的组合效应的标量值。

9. 发明申请

US20160034353A1 Storage Module and Method for Improved Error Correction by Detection of Grown Bad Bit Lines 有权
标题翻译：存储模块和通过检测生成坏位线改进纠错的方法
公开(公告)号：US20160034353A1
公开(公告)日：2016-02-04
申请号：US14502738
申请日：2014-09-30
申请人： SanDisk Technologies Inc.
发明人： Daniel E. Tuers , Abjiheet Manohar
IPC分类号： G06F11/10 , H03M13/09 , H03M13/11
CPC分类号： G06F11/1076 , G06F11/1012 , G11C29/025 , G11C29/42 , G11C29/4401 , G11C29/52 , G11C2029/0403 , G11C2029/0409 , G11C2029/0411 , G11C2029/1208 , G11C2029/4402 , H03M13/1102 , H03M13/1111 , H03M13/152 , H03M13/3723 , H03M13/451 , H03M13/6325
摘要： A storage module and method are provided for improved error correction by detection of grown bad bit lines. In one embodiment, a storage module is provided comprising a controller and a memory having a plurality of bit lines. The controller detects an uncorrectable error in a code word read from the memory, determines location(s) of grown bad bit line(s) that contributed to the error in the code word being uncorrectable, and uses the determined location(s) of the grown bad bit line(s) to attempt to correct the error in the code word.
摘要翻译：提供了一种存储模块和方法，用于通过检测生长的坏位线来改进纠错。在一个实施例中，提供了包括控制器和具有多个位线的存储器的存储模块。控制器检测从存储器读取的代码字中的不可校正错误，确定有助于代码字中的错误是不可校正的生长坏位线的位置，并使用确定的位置生成坏的位线来尝试纠正代码字中的错误。

10. 发明申请

US20150363342A1 Storage Module and Method for Determining Ready/Busy Status of a Plurality of Memory Dies 有权
标题翻译：用于确定多个内存模块的就绪/繁忙状态的存储模块和方法
公开(公告)号：US20150363342A1
公开(公告)日：2015-12-17
申请号：US14448728
申请日：2014-07-31
申请人： SanDisk Technologies Inc.
发明人： Daniel E. Tuers , Abjiheet Manohar , Yoav Weinberg
IPC分类号： G06F13/372 , G06F12/02 , G06F13/16 , G06F13/28
CPC分类号： G06F12/0238 , G06F13/4243 , Y02D10/14 , Y02D10/151
摘要： A storage module and method are provided for determining ready/busy status of a plurality of memory dies. In one embodiment, a bus has a ready/busy line that is shared among the plurality of memory dies, and a time-division multiplex signal on the shared ready/busy line is used to communicate the ready/busy status of each of the memory dies. In another embodiment, each of the memory dies sends its ready/busy status to the storage controller using a different one of a plurality of data lines in the bus. In yet another embodiment, each of the memory dies sends a pulse across the ready/busy line with a different pulse width. To avoid collisions, each memory die waits a different number of clock cycles before attempting to send its pulse status after determining that the shared ready/busy line is in use.
摘要翻译：提供了一种用于确定多个存储器管芯的就绪/忙碌状态的存储模块和方法。在一个实施例中，总线具有在多个存储器管芯之间共享的就绪/忙线，并且共享就绪/忙线上的时分多路复用信号用于传送每个存储器的就绪/忙状态死了在另一个实施例中，每个存储器管芯使用总线中的多个数据线中的不同的一个将其就绪/忙状态发送到存储控制器。在另一个实施例中，每个存储器管芯以不同的脉冲宽度在待机/忙线之间发送脉冲。为了避免冲突，每个存储器管芯在确定共享就绪/忙线正在使用之前尝试发送其脉冲状态之前等待不同数量的时钟周期。

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