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1. 发明申请

US20160049478A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160049478A1
公开(公告)日：2016-02-18
申请号：US14678331
申请日：2015-04-03
申请人： Samsung Electronics Co., Ltd.
发明人： Moon-Kyun Song , Weon-Hong Kim , Soo-Jung Choi , Yoon-Tae Hwang
IPC分类号： H01L29/40 , H01L29/49 , H01L29/51
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823821 , H01L21/823842 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/66795
摘要： A method for fabricating a semiconductor device comprises forming a gate insulation layer on a substrate including a first region and a second region, forming a first gate conductive layer and a capping layer on the first region and the second region and heat-treating the substrate, removing the capping layer from the first region and the second region, forming a second gate conductive layer on the first region and the second region, nitriding the second gate conductive layer, and forming a third gate conductive layer on the second region.
摘要翻译：一种制造半导体器件的方法包括在包括第一区域和第二区域的衬底上形成栅极绝缘层，在第一区域和第二区域上形成第一栅极导电层和覆盖层，并对衬底进行热处理，从所述第一区域和所述第二区域移除所述覆盖层，在所述第一区域和所述第二区域上形成第二栅极导电层，氮化所述第二栅极导电层，以及在所述第二区域上形成第三栅极导电层。

2. 发明授权

US09023718B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09023718B2
公开(公告)日：2015-05-05
申请号：US14165857
申请日：2014-01-28
申请人： Samsung Electronics Co., Ltd.
发明人： Jin-Ho Do , Ha-Jin Lim , Weon-Hong Kim , Hoi-Sung Chung , Moon-Kyun Song , Dae-Kwon Joo
IPC分类号： H01L21/00 , H01L21/02 , H01L21/28 , H01L29/51
CPC分类号： H01L21/02236 , H01L21/02164 , H01L21/022 , H01L21/02238 , H01L21/02271 , H01L21/02532 , H01L21/28194 , H01L21/28211 , H01L29/51 , H01L29/513
摘要： A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.
摘要翻译：制造半导体器件的方法包括：在半导体衬底上形成外延层; 在所述外延层上形成具有第一厚度的覆盖层; 以及在氧气氛中氧化所述覆盖层以形成具有第二厚度的第一栅极介电层。

3. 发明授权

US09218977B2 Fabricating method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09218977B2
公开(公告)日：2015-12-22
申请号：US14015414
申请日：2013-08-30
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Seok-Jun Won , Weon-Hong Kim , Moon-Kyun Song , Hyung-Suk Jung
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/28 , H01L29/51 , H01L21/8234 , H01L21/8238 , H01L29/49 , H01L29/66 , H01L27/11
CPC分类号： H01L21/28185 , H01L21/82345 , H01L21/823842 , H01L27/1104 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A fabricating method of a semiconductor device includes stacking a high-k dielectric film not containing silicon (Si) and an insulating film containing silicon (Si) on a substrate, and diffusing Si contained in the insulating film into the high-k dielectric film by annealing the substrate having the high-k dielectric film and the insulating film stacked thereon.
摘要翻译：半导体器件的制造方法包括在基板上堆叠不含硅（Si）的高k电介质膜和含硅（Si）的绝缘膜，并且将包含在绝缘膜中的Si扩散到高k电介质膜中，由退火具有高k电介质膜的基板和堆叠在其上的绝缘膜。

4. 发明授权

US08796087B2 Method of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08796087B2
公开(公告)日：2014-08-05
申请号：US13923470
申请日：2013-06-21
申请人： Samsung Electronics Co., Ltd.
发明人： Weon-Hong Kim , Min-Woo Song , Jung-Min Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/60 , H01L21/02178 , H01L21/02189 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/3142 , H01L21/31604 , H01L21/31641 , H01L27/10852 , H01L28/40
摘要： A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb; a second dielectric layer on the first dielectric layer, the second dielectric layer including a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, wherein the first metal oxide and the second metal oxide are different materials; a third dielectric layer on the second dielectric layer, the third dielectric layer including a metal carbon oxynitride; and an upper electrode on the third dielectric layer.
摘要翻译：一种包括衬底的半导体器件; 基底上的底电极; 所述第一电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第一金属氧化物; 在所述第一电介质层上的第二电介质层，所述第二电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第二金属氧化物，其中所述第一金属氧化物和所述第二金属氧化物是不同的材料; 第二电介质层上的第三电介质层，第三电介质层包括金属碳氮氧化物; 以及第三电介质层上的上电极。

5. 发明授权

US09698021B2 Deposition methods of forming a layer while rotating the substrate in angular increments and methods of manufacturing a semiconductor device using the same 有权
公开(公告)号：US09698021B2
公开(公告)日：2017-07-04
申请号：US14970105
申请日：2015-12-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Min-Joo Lee , Weon-Hong Kim , Moon-Kyun Song , Dong-Su Yoo , Soo-Jung Choi
IPC分类号： H01L21/28 , H01L21/02 , C23C16/455 , C23C16/458
CPC分类号： H01L21/28194 , C23C16/45544 , C23C16/4584 , H01L21/02181 , H01L21/02189 , H01L21/02205 , H01L21/0228
摘要： In a method of forming a layer, a substrate is loaded into a chamber and placed at a home position that is a first relative angular position. A process cycle is performed a number of times while the substrate is at the home position. The cycle includes directing source gas onto the substrate at a first location adjacent the periphery of the substrate, purging the chamber, directing reaction gas onto the substrate from the first location, and purging the chamber. The cycle is performed another number of times while the substrate is at another relative angular position, i.e., at a position rotated about its general center relative from the home position.

6. 发明授权

US08975171B1 Method of forming a high-k crystalline dielectric 有权
标题翻译：形成高k结晶电介质的方法
公开(公告)号：US08975171B1
公开(公告)日：2015-03-10
申请号：US13930227
申请日：2013-06-28
申请人： Samsung Electronics Co., Ltd.
发明人： Ha-Jin Lim , Weon-Hong Kim
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L21/02181 , H01L21/02148 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28273 , H01L21/3105 , H01L28/40 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Provided are a method of forming a dielectric and a method of fabricating a semiconductor device. The method includes forming a preliminary dielectric including Hf, O and an “A” element on an underlying layer. The preliminary dielectric is formed in an amorphous structure or a mixed structure of an amorphous structure and an “M” crystalline structure. The “A” element about 1 at % to about 5 at % of the total content of the “A” element and Hf in the preliminary dielectric. Through a nitridation process, nitrogen is added to the preliminary dielectric. The nitrogen-containing dielectric is changed into a dielectric having a “T” crystalline structure through a phase transition process, wherein the “T” crystalline structure is different from the “M” crystalline structure. An upper layer is formed on the “T” crystalline dielectric.
摘要翻译：提供形成电介质的方法和制造半导体器件的方法。该方法包括在下层上形成包含Hf，O和“A”元素的预备电介质。预置电介质形成为非晶结构或非晶结构和“M”晶体结构的混合结构。 “A”元素在“A”元素的总含量和预置电介质中的Hf的约1at％至约5at％的“A”元素。通过氮化处理，将氮气加入到初步电介质中。通过相变过程将含氮电介质变成具有“T”晶体结构的电介质，其中“T”晶体结构不同于“M”晶体结构。在“T”晶体电介质上形成上层。

7. 发明授权

US08963227B2 Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same 有权
标题翻译：具有扩散阻挡层的半导体器件及其制造方法
公开(公告)号：US08963227B2
公开(公告)日：2015-02-24
申请号：US14049570
申请日：2013-10-09
申请人： Samsung Electronics Co., Ltd.
发明人： Ha-Jin Lim , Jin-Ho Do , Weon-Hong Kim , Moon-Kyun Song , Dae-Kwon Joo
IPC分类号： H01L29/76 , H01L29/78 , H01L21/28 , H01L21/8238 , H01L27/108 , H01L29/49
CPC分类号： H01L29/78 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L27/10873 , H01L27/10894 , H01L29/4966
摘要： Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.
摘要翻译：制造半导体器件的方法包括在被分成第一区域和第二区域的衬底上形成包括高k电介质材料的栅极绝缘层; 在所述第二区域中的所述栅极绝缘层的第二部分上形成包括第一金属的扩散阻挡层; 在所述栅绝缘层和所述扩散阻挡层上形成扩散层; 以及将所述扩散层的元素扩散到所述第一区域中的所述栅极绝缘层的第一部分中。

8. 发明授权

US09431515B2 Methods of forming semiconductor devices, including performing a heat treatment after forming a metal layer and a high-k layer 有权
标题翻译：形成半导体器件的方法，包括在形成金属层和高k层之后进行热处理
公开(公告)号：US09431515B2
公开(公告)日：2016-08-30
申请号：US14640058
申请日：2015-03-06
申请人： Samsung Electronics Co., Ltd.
发明人： Seok-Jun Won , Weon-Hong Kim , Moon-Kyun Song
IPC分类号： H01L21/8238 , H01L29/66 , H01L21/28 , H01L21/321 , H01L29/49 , H01L29/51
CPC分类号： H01L29/66545 , H01L21/28088 , H01L21/28176 , H01L21/28194 , H01L21/28202 , H01L21/321 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming an insulating layer that includes a trench therein. The method includes forming a high-k layer in the trench. Moreover, the method includes forming a metal layer on the high-k layer, then performing a first heat treatment at a first temperature, and performing a second heat treatment at a second temperature that is higher than the first temperature.
摘要翻译：提供了形成半导体器件的方法。形成半导体器件的方法包括在其中形成包括沟槽的绝缘层。该方法包括在沟槽中形成高k层。此外，该方法包括在高k层上形成金属层，然后在第一温度下进行第一热处理，并在高于第一温度的第二温度下进行第二热处理。

9. 发明授权

US09275993B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09275993B2
公开(公告)日：2016-03-01
申请号：US13960977
申请日：2013-08-07
申请人： Samsung Electronics Co., Ltd.
发明人： Weon-Hong Kim , Moon-Kyun Song , Seok-Jun Won
IPC分类号： H01L27/088 , H01L21/28 , H01L27/092 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/8238
CPC分类号： H01L27/088 , H01L21/28008 , H01L21/823807 , H01L21/823857 , H01L27/092 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/78
摘要： A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.
摘要翻译：半导体器件包括在衬底的第一区域上的第一界面膜，第一界面膜在第一生长界面膜的下部包括第一生长界面膜和第二生长界面膜，第一介电膜在第一界面膜和第一电介质膜上的第一栅电极。

10. 发明授权

US08940611B2 Semiconductor integrated circuit device and method of fabricating the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US08940611B2
公开(公告)日：2015-01-27
申请号：US14290700
申请日：2014-05-29
申请人： Samsung Electronics Co., Ltd.
发明人： Weon-Hong Kim , Min-Woo Song , Jung-Min Park
IPC分类号： H01L29/72 , H01L49/02
CPC分类号： H01L28/40 , H01L28/56 , H01L28/65
摘要： A semiconductor integrated circuit device includes a lower electrode formed on a substrate, a first dielectric layer formed of a metal nitride layer, a metal oxynitride layer, or a combination thereof, on the lower electrode, a second dielectric layer formed on the first dielectric layer that includes a zirconium oxide layer, and an upper electrode formed on the second dielectric layer.
摘要翻译：一种半导体集成电路器件，包括在下电极上形成的下电极，由金属氮化物层形成的第一电介质层，金属氮氧化物层或其组合，形成在第一介电层上的第二电介质层其包括氧化锆层和形成在第二介电层上的上电极。

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