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    • 7. 发明申请
    • IMAGE SENSOR
    • 图像传感器
    • US20160190198A1
    • 2016-06-30
    • US14958987
    • 2015-12-04
    • SAMSUNG ELECTRONICS CO., LTD.
    • DooWon KWONTaeseok Oh
    • H01L27/146H01L25/04
    • H01L27/14636H01L27/14612H01L27/14621H01L27/14623H01L27/14627H01L27/14634H01L27/1464H01L27/1469H01L2924/0002H01L2924/00
    • An image sensor includes a pixel array chip, a logic chip, and an interposed layer. The interposed layer is disposed on the pixel array chip. The logic chip is disposed on the interposed layer. The interposed layer includes a connecting part, a shielding part, and a metal-diffusion barrier layer. The connecting part electrically connects a first interconnection wire of the pixel array chip and a second interconnection wire of the logic chip. The connecting part includes a first metallic element. The shielding part is disposed spatially apart from the connecting part and electrically grounded to suppress an electrical coupling between the pixel array chip and the logic chip. The shielding part includes a second metallic element. The metal-diffusion barrier layer is disposed on top and bottom surfaces of the interposed layer to limit diffusion of electrical charges to the pixel array chip and the logic chip.
    • 图像传感器包括像素阵列芯片,逻辑芯片和插入层。 插入层设置在像素阵列芯片上。 逻辑芯片设置在插入层上。 插入层包括连接部分,屏蔽部分和金属扩散阻挡层。 连接部分电连接像素阵列芯片的第一互连线和逻辑芯片的第二互连线。 连接部分包括第一金属元件。 屏蔽部分在空间上与连接部分配置并电接地以抑制像素阵列芯片和逻辑芯片之间的电耦合。 屏蔽部分包括第二金属元件。 金属扩散阻挡层设置在插入层的顶表面和底表面上,以限制电荷向像素阵列芯片和逻辑芯片的扩散。