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1. 发明授权

US10084049B2 Semiconductor device 有权
公开(公告)号：US10084049B2
公开(公告)日：2018-09-25
申请号：US15685255
申请日：2017-08-24
申请人： Samsung Electronics Co., Ltd.
发明人： Jin Bum Kim , Gyeom Kim , Seok Hoon Kim , Tae Jin Park , Jeong Ho Yoo , Cho Eun Lee , Hyun Jung Lee , Sun Jung Kim , Dong Suk Shin
IPC分类号： H01L27/12 , H01L29/417 , H01L27/092 , H01L29/51 , H01L29/423 , H01L21/02 , H01L21/3205
CPC分类号： H01L29/41725 , H01L21/02425 , H01L21/28518 , H01L21/32053 , H01L21/823814 , H01L21/823821 , H01L23/485 , H01L27/0924 , H01L29/0847 , H01L29/165 , H01L29/41791 , H01L29/42356 , H01L29/517 , H01L29/66545 , H01L29/7848 , H01L2924/0002
摘要： A semiconductor device includes: a substrate having an active region; a gate structure disposed in the active region; source/drain regions respectively formed within portions of the active region disposed on both sides of the gate structure; a metal silicide layer disposed on a surface of each of the source/drain regions; and contact plugs disposed on the source/drain regions and electrically connected to the source/drain regions through the metal silicide layer, respectively. The metal silicide layer is formed so as to have a monocrystalline structure.

2. 发明授权

US10790133B2 Precleaning apparatus and substrate processing system 有权
公开(公告)号：US10790133B2
公开(公告)日：2020-09-29
申请号：US15416408
申请日：2017-01-26
申请人： Samsung Electronics Co., Ltd.
发明人： Keum Seok Park , Sun Jung Kim , Yi Hwan Kim , Pan Kwi Park , Dong Suk Shin , Hyun Kwan Yu , Seung Hun Lee
IPC分类号： B08B7/00 , B08B7/04 , H01L21/02 , H01L21/67 , H01L21/687 , H01L29/66 , H01J37/32 , H01L21/683 , H01L29/78 , H01L29/165
摘要： A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

3. 发明申请

US20160366359A1 IMAGE SENSOR FOR DISTRIBUTING OUTPUT PEAK CURRENT AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME 有权
标题翻译：用于分配输出峰值电流的图像传感器和包括其的图像处理系统
公开(公告)号：US20160366359A1
公开(公告)日：2016-12-15
申请号：US14989220
申请日：2016-01-06
申请人： Samsung Electronics Co., Ltd.
发明人： Han Soo Lee , Hee Sung Chae , Kyung Min Kim , Dah Som Kim , Sun Jung Kim , Seung Hoon Jung
IPC分类号： H04N5/378 , H04N5/232
CPC分类号： H04N5/378 , H03M1/00 , H03M1/123 , H03M1/56 , H04N5/357
摘要： The image sensor includes a first analog-to-digital converter configured to convert a first analog pixel signal output from a first pixel in a row into first digital signals, a second analog-to-digital converter configured to convert a second analog pixel signal output from a second pixel in the row into second digital signals, a first output circuit configured to output a first bit value at a first position in the first digital signals in response to a first enable control signal, and a second output circuit configured to output a second bit value at a second position in the second digital signals in response to a second enable control signal, the second position in the second digital signals corresponding to the first position in the first digital signals, wherein the second enable control signal is activated with a delay from the activation of the first enable control signal.
摘要翻译：图像传感器包括：第一模数转换器，被配置为将从行中的第一像素输出的第一模拟像素信号转换为第一数字信号;第二模数转换器，被配置为将第二模拟像素信号输出从所述行中的第二像素转换为第二数字信号，第一输出电路，被配置为响应于第一使能控制信号而在第一数字信号中的第一位置处输出第一位值，以及第二输出电路，响应于第二使能控制信号在第二数字信号中的第二位置处的第二位值，第二数字信号中的第二位置对应于第一数字信号中的第一位置，其中第二使能控制信号由从第一使能控制信号的激活延迟。

4. 发明授权

US11004985B2 Semiconductor device having multi-thickness nanowire 有权
公开(公告)号：US11004985B2
公开(公告)日：2021-05-11
申请号：US16793162
申请日：2020-02-18
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Seung Hun Lee , Dong Woo Kim , Dong Chan Suh , Sun Jung Kim
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/775 , H01L29/786 , H01L21/02 , H01L21/8238 , H01L29/66 , B82Y10/00 , H01L27/092
摘要： A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

5. 发明授权

US10693017B2 Semiconductor device having a multi-thickness nanowire 有权
公开(公告)号：US10693017B2
公开(公告)日：2020-06-23
申请号：US16435263
申请日：2019-06-07
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Seung Hun Lee , Dong Woo Kim , Dong Chan Suh , Sun Jung Kim
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/775 , H01L27/092 , B82Y10/00 , H01L29/786 , H01L21/02 , H01L21/8238
摘要： A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

6. 发明申请

US20190177845A1 Semiconductor Process Chamber 审中-公开
公开(公告)号：US20190177845A1
公开(公告)日：2019-06-13
申请号：US16039565
申请日：2018-07-19
申请人： Samsung Electronics Co., Ltd. , Tokyo Electron Limited
发明人： Seung Jae Baek , Hyun Namkoong , Tae Jong Lee , Sun Jung Kim , Ju Yeon Kim , Noriaki Fukiage , Masahide Iwasaki , Yuta Sorita
IPC分类号： C23C16/455 , H01L21/687 , C23C16/50 , C23C16/458
摘要： A semiconductor process chamber is provided. The semiconductor process chamber includes a susceptor on which a plurality of wafers are disposed; a showerhead structure opposing the susceptor and disposed to be spaced apart from the susceptor; a plurality of plates opposing the susceptor and disposed to be spaced apart from the susceptor; and a blocking structure disposed between plates, among the plurality of plates, disposed adjacent to each other, wherein a distance between the showerhead structure and the susceptor is less than a distance between the plurality of plates and the susceptor, and a distance between the blocking structure and the susceptor is less than the distance between the plurality of plates and the susceptor.

7. 发明申请

US20180355510A1 SEMICONDUCTOR PROCESS CHAMBER INCLUDING LOWER VOLUME UPPER DOME 审中-公开
公开(公告)号：US20180355510A1
公开(公告)日：2018-12-13
申请号：US15869905
申请日：2018-01-12
申请人： Samsung Electronics Co., Ltd.
发明人： Keum Seok Park , Gyeom Kim , Yi Hwan Kim , Sun Jung Kim , Pan Kwi Park , Jeong Ho Yoo
IPC分类号： C30B25/12 , C23C16/458
CPC分类号： C30B25/12 , C23C16/4585 , H01L29/0847 , H01L29/66795
摘要： A semiconductor process chamber includes a susceptor, a base plate surrounding the susceptor, a liner on an inner sidewall of the base plate, and a preheat ring between the susceptor and the base plate and coplanar with the susceptor. The process chamber further includes an upper dome coupled to the base plate and covering an upper surface of the susceptor. The upper dome includes a first section on an upper surface of the base plate and a second section extending from the first section and overlapping the susceptor. The first section includes a first region on the upper surface of the base plate, a second region extending from the first region past the base plate, and a third region extending from the second region with a decreasing thickness to contact the second section.

8. 发明授权

US10128112B2 Method of fabricating semiconductor device 有权
公开(公告)号：US10128112B2
公开(公告)日：2018-11-13
申请号：US15595945
申请日：2017-05-16
申请人： Samsung Electronics Co., Ltd.
发明人： Cho Eun Lee , Jin Bum Kim , Kang Hun Moon , Jae Myung Choe , Sun Jung Kim , Dong Suk Shin , Il Gyou Shin , Jeong Ho Yoo
IPC分类号： H01L21/336 , H01L21/02 , H01L21/223 , H01L29/66
摘要： A method of fabricating a semiconductor device is provided. The method includes forming a dummy gate electrode on a substrate, forming a trench on a side surface of the dummy gate electrode, performing a bake process of removing an impurity from the trench and forming a source/drain in the trench, wherein the bake process comprises a first stage and a second stage following the first stage, an air pressure in which the substrate is disposed during the first stage is different from an air pressure in which the substrate is disposed during the second stage, and the bake process is performed while the substrate is on a stage rotating the substrate, wherein a revolution per minute (RPM) of the substrate during the first stage is different from a revolution per minute (RPM) of the substrate during the second stage.

9. 发明授权

US10319863B2 Semiconductor device having a varying thickness nanowire channel and method for fabricating the same 有权
公开(公告)号：US10319863B2
公开(公告)日：2019-06-11
申请号：US15373065
申请日：2016-12-08
申请人： Samsung Electronics Co., Ltd.
发明人： Seung Hun Lee , Dong Woo Kim , Dong Chan Suh , Sun Jung Kim
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66 , H01L21/02 , H01L29/786 , H01L27/092 , H01L29/423 , H01L21/8238 , H01L29/775 , B82Y10/00 , H01L29/08
摘要： A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

10. 发明申请

US20180025901A1 Precleaning Apparatus and Substrate Processing System 审中-公开
公开(公告)号：US20180025901A1
公开(公告)日：2018-01-25
申请号：US15416408
申请日：2017-01-26
申请人： Samsung Electronics Co., Ltd.
发明人： Keum Seok Park , Sun Jung Kim , Yi Hwan Kim , Pan Kwi Park , Dong Suk Shin , Hyun Kwan Yu , Seung Hun Lee
IPC分类号： H01L21/02 , B08B7/04 , H01L29/66 , B08B7/00 , H01L21/67 , H01L21/687
CPC分类号： H01L21/02057 , B08B7/0035 , B08B7/04 , H01J37/32091 , H01J37/32889 , H01J2237/335 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/67034 , H01L21/67109 , H01L21/67167 , H01L21/67184 , H01L21/67201 , H01L21/6831 , H01L21/68707 , H01L21/68742 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/66659 , H01L29/7848
摘要： A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

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