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1. 发明授权

US11121064B2 Semiconductor package 有权
公开(公告)号：US11121064B2
公开(公告)日：2021-09-14
申请号：US16819318
申请日：2020-03-16
申请人： Samsung Electronics Co., Ltd.
发明人： Jung-Ho Park , Da Hye Kim , Jin-Woo Park , Jae Gwon Jang
IPC分类号： H01L23/495 , H01L23/498 , H01L23/31
摘要： A semiconductor package having a redistribution structure including a first face and a second face and a first semiconductor chip mounted on the first face. The semiconductor package may further include a first redistribution pad exposed from the second face of the redistribution structure and a second redistribution pad exposed from the second face of the redistribution structure. The semiconductor package may further include a first solder ball being in contact with the first redistribution pad and a second solder ball being in contact with the second redistribution pad. In some embodiments, a first distance of the first redistribution pad is smaller than a second distance of the second redistribution pad, the first and second distances are measured with respect to a reference plane that intersects a lower portion of the first solder ball and a lower portion of the second solder ball.

2. 发明授权

US12046526B2 Methods of fabricating semiconductor package 有权
公开(公告)号：US12046526B2
公开(公告)日：2024-07-23
申请号：US17735471
申请日：2022-05-03
申请人： Samsung Electronics Co., Ltd.
发明人： Jung-Ho Park , Jin-Woo Park , Jae Gwon Jang , Gwang Jae Jeon
IPC分类号： H01L23/31 , H01L21/56 , H01L23/00 , H01L23/29
CPC分类号： H01L23/3128 , H01L21/565 , H01L24/19 , H01L23/293
摘要： Methods of fabricating a semiconductor package may include forming a first barrier layer on a first carrier, forming a sacrificial layer, including an opening that exposes at least a portion of the first barrier layer, on the first barrier layer, and forming a second barrier layer on the first barrier layer and on the sacrificial layer. The second barrier layer may include a portion formed on the sacrificial layer. The methods may also include forming a first insulating layer in the opening and protruding beyond a top surface of the portion of the second barrier layer on the sacrificial layer, a top surface of the first insulating layer being farther from the first barrier layer than the top surface of the portion of the second barrier layer, forming a redistribution structure including a redistribution layer and a second insulating layer on the first insulating layer and on the second barrier layer, mounting a semiconductor chip on the redistribution structure, attaching a second carrier onto the semiconductor chip and removing the first carrier, removing the first barrier layer, the sacrificial layer, and the second barrier layer to expose portions of the redistribution structure, and forming solder balls, respectively, on the portions of the redistribution structure.

3. 发明授权

US12009277B2 Semiconductor package 有权
公开(公告)号：US12009277B2
公开(公告)日：2024-06-11
申请号：US17866866
申请日：2022-07-18
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Dong Kyu Kim , Jung-Ho Park , Jong Youn Kim , Yeon Ho Jang , Jae Gwon Jang
IPC分类号： H01L23/367 , H01L21/48 , H01L21/683 , H01L21/78 , H01L23/00 , H01L25/00 , H01L25/065 , H01L25/18
CPC分类号： H01L23/3675 , H01L21/4871 , H01L21/6835 , H01L21/78 , H01L24/16 , H01L25/0655 , H01L25/18 , H01L25/50 , H01L2221/68331 , H01L2224/16225 , H01L2924/1431 , H01L2924/1434
摘要： A semiconductor package includes a first semiconductor chip and a second semiconductor chip on a substrate, a barrier layer on the first semiconductor chip and the second semiconductor chip, the barrier layer having an opening through which at least a part of the first semiconductor chip is exposed, and a heat transfer part on the barrier layer, the heat transfer part extending along an upper face of the barrier layer and filling the opening.

4. 发明授权

US11328970B2 Methods of fabricating semiconductor package 有权
公开(公告)号：US11328970B2
公开(公告)日：2022-05-10
申请号：US16866594
申请日：2020-05-05
申请人： Samsung Electronics Co., Ltd.
发明人： Jung-Ho Park , Jin-Woo Park , Jae Gwon Jang , Gwang Jae Jeon
IPC分类号： H01L21/56 , H01L23/31 , H01L23/00 , H01L23/29
摘要： Methods of fabricating a semiconductor package may include forming a first barrier layer on a first carrier, forming a sacrificial layer, including an opening that exposes at least a portion of the first barrier layer, on the first barrier layer, and forming a second barrier layer on the first barrier layer and on the sacrificial layer. The second barrier layer may include a portion formed on the sacrificial layer. The methods may also include forming a first insulating layer in the opening and protruding beyond a top surface of the portion of the second barrier layer on the sacrificial layer, a top surface of the first insulating layer being farther from the first barrier layer than the top surface of the portion of the second barrier layer, forming a redistribution structure including a redistribution layer and a second insulating layer on the first insulating layer and on the second barrier layer, mounting a semiconductor chip on the redistribution structure, attaching a second carrier onto the semiconductor chip and removing the first carrier, removing the first barrier layer, the sacrificial layer, and the second barrier layer to expose portions of the redistribution structure, and forming solder balls, respectively, on the portions of the redistribution structure.

5. 发明授权

US11322368B2 Method for fabricating semiconductor package 有权
公开(公告)号：US11322368B2
公开(公告)日：2022-05-03
申请号：US17037003
申请日：2020-09-29
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jung-Ho Park , Jin-Woo Park , Seok Hyun Lee , Jae Gwon Jang , Gwang Jae Jeon
IPC分类号： H01L21/48 , H01L21/52 , H01L25/00 , H01L21/56 , H01L23/498
摘要： A method for fabricating a semiconductor package, the method including: forming a release layer on a first carrier substrate, wherein the release layer includes a first portion and a second portion, wherein the first portion has a first thickness, and the second portion has a second thickness thicker than the first thickness; forming a barrier layer on the release layer; forming a redistribution layer on the barrier layer, wherein the redistribution layer includes wirings and an insulating layer; mounting a semiconductor chip on the redistribution layer; forming a molding layer on the redistribution layer to at least partially surround the semiconductor chip; attaching a second carrier substrate onto the molding layer; removing the first carrier substrate and the release layer; removing the barrier layer; and attaching a solder ball onto the redistribution layer exposed by removal of the barrier layer and the second portion of the release layer.

6. 发明授权

US11715645B2 Method for fabricating semiconductor package 有权
公开(公告)号：US11715645B2
公开(公告)日：2023-08-01
申请号：US17656695
申请日：2022-03-28
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jung-Ho Park , Jin-Woo Park , Seok Hyun Lee , Jae Gwon Jang , Gwang Jae Jeon
IPC分类号： H01L21/48 , H01L21/52 , H01L25/00 , H01L21/56 , H01L23/498
CPC分类号： H01L21/4853 , H01L21/52 , H01L21/565 , H01L23/49816 , H01L25/50
摘要： A method for fabricating a semiconductor package, the method including: forming a release layer on a first carrier substrate, wherein the release layer includes a first portion and a second portion, wherein the first portion has a first thickness, and the second portion has a second thickness thicker than the first thickness; forming a barrier layer on the release layer; forming a redistribution layer on the barrier layer, wherein the redistribution layer includes wirings and an insulating layer; mounting a semiconductor chip on the redistribution layer; forming a molding layer on the redistribution layer to at least partially surround the semiconductor chip; attaching a second carrier substrate onto the molding layer; removing the first carrier substrate and the release layer; removing the barrier layer; and attaching a solder ball onto the redistribution layer exposed by removal of the barrier layer and the second portion of the release layer.

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