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1. 发明申请

US20180175178A1 METHOD OF MANUFACTURING OXIDE THIN FILM TRANSISTOR 审中-公开
公开(公告)号：US20180175178A1
公开(公告)日：2018-06-21
申请号：US15895464
申请日：2018-02-13
申请人： Samsung Display Co., Ltd.
发明人： Jung Yun JO , Su Bin BAE , Ki Seong SEO
IPC分类号： H01L29/66 , H01L29/786 , H01L29/45 , H01L29/417 , H01L21/4763 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/47635 , H01L29/41733 , H01L29/45 , H01L29/78606 , H01L29/7869
摘要： There is provided a method of manufacturing an oxide thin film transistor (TFT). The method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere, secondly plasma processing the substrate at a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate.

2. 发明申请

US20190123065A1 TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20190123065A1
公开(公告)日：2019-04-25
申请号：US16215520
申请日：2018-12-10
申请人： Samsung Display Co., Ltd.
发明人： Yu-Gwang JEONG , Hyun Min CHO , Su Bin BAE , Shin II CHOI , Sang Gab KIM
IPC分类号： H01L27/12 , H01L21/311 , H01L29/417
CPC分类号： H01L27/124 , G02F1/1368 , G02F2201/123 , H01L21/31116 , H01L21/31144 , H01L27/1218 , H01L27/1288 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L29/41733 , H01L29/78633
摘要： A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

3. 发明申请

US20170278867A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20170278867A1
公开(公告)日：2017-09-28
申请号：US15465154
申请日：2017-03-21
申请人： Samsung Display Co. Ltd.
发明人： Yu Gwang JEONG , Su Bin BAE , Hyun Min CHO , Sang Gab KIM
IPC分类号： H01L27/12
摘要： A display device may include a substrate, an active pattern layer, a gate insulating layer, a first metal pattern layer, an interlayer insulating layer, a second metal pattern layer, and a passivation film. The active pattern layer may be disposed on the substrate. The gate insulating layer may be disposed on the active pattern layer. The first metal pattern layer may be disposed on the gate insulating layer. The interlayer insulating layer may be disposed on the first metal pattern layer. The second metal pattern layer may be disposed on the interlayer insulating layer. The passivation film may be disposed on the side wall of the second metal pattern layer.

4. 发明申请

US20160170521A1 ELECTRODE PATTERN, MANUFACTURING METHOD THEREOF, AND TOUCH SENSOR INCLUDING THE SAME 审中-公开
标题翻译：电极图案及其制造方法，以及包括其的触摸传感器
公开(公告)号：US20160170521A1
公开(公告)日：2016-06-16
申请号：US14712953
申请日：2015-05-15
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Shin Il CHOI , Jae Neung KIM , Su Bin BAE , Yu-Gwang JEONG
IPC分类号： G06F3/044 , C23F1/00 , G06F1/16
CPC分类号： G06F3/044 , G06F2203/04103 , G06F2203/04111 , G06F2203/04112
摘要： A transparent electrode pattern includes a first electrode including a first lower conductive layer and a first upper conductive layer located on the first lower conductive layer and a second electrode spaced apart from the first electrode and including a second lower conductive layer and a second upper conductive layer positioned on the second lower conductive layer. The first and second lower conductive layers may include a metal nanowire. The first and second upper conductive layers may include a transparent conductive material that is dry-etchable.
摘要翻译：透明电极图案包括第一电极，其包括第一下导电层和位于第一下导电层上的第一上导电层和与第一电极间隔开的第二电极，并且包括第二下导电层和第二上导电层位于第二下导电层上。第一和第二下导电层可以包括金属纳米线。第一和第二上导电层可以包括可干蚀刻的透明导电材料。

5. 发明申请

US20190280067A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20190280067A1
公开(公告)日：2019-09-12
申请号：US16260293
申请日：2019-01-29
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yu-Gwang JEONG , Su Bin BAE , Joon Geol LEE , Sang Gab KIM , Shin Il CHOI
IPC分类号： H01L27/32
摘要： A display device and a method for manufacturing a display device, the device including a semiconductor layer on a substrate; a gate insulation layer and an interlayer insulation layer that overlap the semiconductor layer; contact holes that penetrate the gate insulation layer and the interlayer insulation layer; a source electrode and a drain electrode that are electrically connected with the semiconductor layer through the contact holes; a light emitting diode that is connected with the drain electrode; and first spacers and second spacers between the source electrode and the interlayer insulation layer and between the drain electrode and the interlayer insulation layer in the contact holes.

6. 发明申请

US20190081089A1 DISPLAY DEVICE, MANUFACTURING METHOD OF DISPLAY DEVICE, AND ELECTRODE FORMING METHOD 审中-公开
公开(公告)号：US20190081089A1
公开(公告)日：2019-03-14
申请号：US16124387
申请日：2018-09-07
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Hyun Min CHO , Shin Il CHOI , Sang Gab KIM , Su Bin BAE , Yu Gwang JEONG
IPC分类号： H01L27/12 , H01L29/49 , H01L21/3213 , H01L29/786
摘要： A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, and wherein the second gate electrode includes a first layer that is provided on an insulating layer and includes molybdenum, a second layer that is provided on the first layer and includes titanium, and a third layer that is provided on the second layer and includes molybdenum.

7. 发明申请

US20170278977A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170278977A1
公开(公告)日：2017-09-28
申请号：US15271504
申请日：2016-09-21
申请人： Samsung Display Co., Ltd.
发明人： Yu-Gwang JEONG , Hyun Min CHO , Su Bin BAE , Shin Il CHOI
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/78606 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/78603 , H01L29/78633 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor array panel includes a substrate; a data line disposed on the substrate; a buffer layer disposed on the substrate and spaced apart from the data line in a plan view; a thin film transistor disposed on the buffer layer, the thin film transistor including an oxide semiconductor layer; and a pixel electrode connected to the thin film transistor.

8. 发明申请

US20160379997A1 DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20160379997A1
公开(公告)日：2016-12-29
申请号：US15175839
申请日：2016-06-07
申请人： Samsung Display Co., Ltd.
发明人： Jung Yun JO , Su Bin BAE , Sang Hyeon SONG , Cheol Geun AN
IPC分类号： H01L27/12 , G06F3/041
CPC分类号： H01L27/124 , G06F3/0416 , G06F2203/04103 , H01L27/1262
摘要： An exemplary embodiment of the described technology relates generally to a display apparatus including a plurality of pixels and corresponding to one area of a substrate for displaying an image, and a pad area corresponding to another area of the substrate, the pad area including a lower electrode configured to transmit an electric signal to the pixels, and a plurality of pad electrodes electrically connecting the lower electrode and a driving chip, wherein each of the pad electrodes includes a first contact surface for contacting the lower electrode, a second contact surface for contacting the driving chip, and an oxide layer on a surface of the pad electrode that is exposed to the outside, and that connects the first contact surface and the second contact surface.
摘要翻译：所描述的技术的示例性实施例一般涉及包括多个像素并且对应于用于显示图像的基板的一个区域的显示装置以及对应于该基板的另一个区域的焊盘区域，该焊盘区域包括下部电极被配置为向所述像素发送电信号，以及电连接所述下电极和驱动芯片的多个焊盘电极，其中每个焊盘电极包括用于接触所述下电极的第一接触表面，用于接触所述下电极的第二接触表面驱动芯片和暴露于外部的焊盘电极的表面上的氧化物层，并且连接第一接触表面和第二接触表面。

9. 发明申请

US20160211353A1 METHOD OF MANUFACTURING OXIDE THIN FILM TRANSISTOR 审中-公开
标题翻译：氧化物薄膜晶体管的制造方法
公开(公告)号：US20160211353A1
公开(公告)日：2016-07-21
申请号：US14966125
申请日：2015-12-11
申请人： Samsung Display Co., Ltd.
发明人： Jung Yun JO , Su Bin BAE , Ki Seong SEO
IPC分类号： H01L29/66 , H01L29/45 , H01L29/786 , H01L29/24 , H01L21/475 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/47635 , H01L29/41733 , H01L29/45 , H01L29/78606 , H01L29/7869
摘要： There is provided a method of manufacturing an oxide thin film transistor (TFT). The method includes forming a gate electrode on a substrate, forming a gale insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere, secondly plasma processing the substrate al a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate.
摘要翻译：提供一种制造氧化物薄膜晶体管（TFT）的方法。该方法包括在衬底上形成栅电极，在栅电极上形成一绝热层，在栅极绝缘层上形成包括沟道层的氧化物半导体层，形成在其上分离的源极和漏电极氧化半导体层，在碳（C）气氛下对其上形成有源电极和漏电极的基板进行等离子体处理，其次，在氮氧化物气氛下等离子体处理基板，依次形成第一保护层和第二保护层层。

10. 发明申请

US20220229322A1 DISPLAY DEVICE, METHOD FOR FORMING A PATTERN AND METHOD FOR MANUFACTURING DISPLAY DEVICE 有权
公开(公告)号：US20220229322A1
公开(公告)日：2022-07-21
申请号：US17713715
申请日：2022-04-05
申请人： Samsung Display Co., LTD.
发明人： Seon-Il KIM , Sung Won CHO , Sang Gab KIM , Su Bin BAE , Yu-Gwang JEONG , Dae Won CHOI
IPC分类号： G02F1/1368 , G02F1/1362 , H01L51/56 , H01L51/52 , H01L27/32
摘要： A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.

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