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1. 发明申请

US20220310928A1 DISPLAY DEVICE 有权
公开(公告)号：US20220310928A1
公开(公告)日：2022-09-29
申请号：US17648409
申请日：2022-01-19
申请人： Samsung Display Co., Ltd.
发明人： Ju Hyun LEE , Gyung Min BAEK , Tae Wook KANG , Shin Il CHOI , Do Keun SONG
IPC分类号： H01L51/00
摘要： A display device comprises first and second electrodes extending in one direction on a substrate, the first and second electrodes being spaced apart from each other, an organic layer on the first and second electrodes, the organic layer including a plurality of conductive regions and an insulating region, light-emitting elements on the organic layer and on the first and second electrodes, and a first connecting electrode coupled to first end portions of the light-emitting elements and one of the plurality of conductive regions, and a second connecting electrode coupled to second end portions of the light-emitting elements and another one of the plurality of conductive regions, wherein the organic layer includes PEDOT:PSS, and a surface roughness of the insulating region is greater than a surface roughness of the plurality of conductive regions.

2. 发明申请

US20210376243A1 METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE 有权
公开(公告)号：US20210376243A1
公开(公告)日：2021-12-02
申请号：US17255406
申请日：2018-12-21
申请人： Samsung Display Co., LTD.
发明人： Hyun Min CHO , Shin Il CHOI , Sang Gab KIM , Tae Sung KIM
IPC分类号： H01L51/00 , H01L27/32
摘要： A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.

3. 发明申请

US20190165083A1 CONDUCTIVE PATTERN, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING CONDUCTIVE PATTERN 审中-公开
公开(公告)号：US20190165083A1
公开(公告)日：2019-05-30
申请号：US16164796
申请日：2018-10-19
申请人： Samsung Display Co., Ltd.
发明人： Joon Geol LEE , Kyeong Su KO , Sang Won SHIN , Dong Min LEE , Sang Gab KIM , Sang Woo SOHN , Hyun Eok SHIN , Shin Il CHOI
IPC分类号： H01L27/32 , H01L51/56
摘要： A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.

4. 发明申请

US20160334904A1 TOUCH SCREEN PANEL 审中-公开
标题翻译：触摸屏面板
公开(公告)号：US20160334904A1
公开(公告)日：2016-11-17
申请号：US15079881
申请日：2016-03-24
申请人： Samsung Display Co., Ltd.
发明人： Shin Il CHOI , Ji Hun KIM , Bong-Kyun KIM
IPC分类号： G06F3/044 , G06F3/041
CPC分类号： G06F3/044 , G06F2203/04102 , G06F2203/04103 , G06F2203/04112
摘要： A touch screen panel and a method of manufacturing the same. The touch screen panel includes: a plurality of touch electrodes disposed in a touch area of a substrate, the touch electrodes configured to sense a touch; and a connecting wire connected with the touch electrode and having a pad connected to one end. The connecting wire includes a first wire layer made of a metal nano wire disposed on the substrate, a second wire layer made of a first transparent conductive material, a third wire layer disposed on an upper surface of the second pad and made of a second transparent conductive material, and a fourth wire layer made of aluminum (Al) disposed on the third pad.
摘要翻译：触摸屏面板及其制造方法。触摸屏面板包括：设置在基板的触摸区域中的多个触摸电极，所述触摸电极被配置为感测触摸; 以及与触摸电极连接并具有连接到一端的焊盘的连接线。连接线包括由设置在基板上的金属纳米线构成的第一线层，由第一透明导电材料制成的第二线层，设置在第二衬垫的上表面上并由第二透明导电材料制成的第三线层以及设置在第三焊盘上的由铝（Al）制成的第四导线层。

5. 发明申请

US20190280067A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20190280067A1
公开(公告)日：2019-09-12
申请号：US16260293
申请日：2019-01-29
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yu-Gwang JEONG , Su Bin BAE , Joon Geol LEE , Sang Gab KIM , Shin Il CHOI
IPC分类号： H01L27/32
摘要： A display device and a method for manufacturing a display device, the device including a semiconductor layer on a substrate; a gate insulation layer and an interlayer insulation layer that overlap the semiconductor layer; contact holes that penetrate the gate insulation layer and the interlayer insulation layer; a source electrode and a drain electrode that are electrically connected with the semiconductor layer through the contact holes; a light emitting diode that is connected with the drain electrode; and first spacers and second spacers between the source electrode and the interlayer insulation layer and between the drain electrode and the interlayer insulation layer in the contact holes.

6. 发明申请

US20190081089A1 DISPLAY DEVICE, MANUFACTURING METHOD OF DISPLAY DEVICE, AND ELECTRODE FORMING METHOD 审中-公开
公开(公告)号：US20190081089A1
公开(公告)日：2019-03-14
申请号：US16124387
申请日：2018-09-07
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Hyun Min CHO , Shin Il CHOI , Sang Gab KIM , Su Bin BAE , Yu Gwang JEONG
IPC分类号： H01L27/12 , H01L29/49 , H01L21/3213 , H01L29/786
摘要： A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, and wherein the second gate electrode includes a first layer that is provided on an insulating layer and includes molybdenum, a second layer that is provided on the first layer and includes titanium, and a third layer that is provided on the second layer and includes molybdenum.

7. 发明申请

US20170278977A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170278977A1
公开(公告)日：2017-09-28
申请号：US15271504
申请日：2016-09-21
申请人： Samsung Display Co., Ltd.
发明人： Yu-Gwang JEONG , Hyun Min CHO , Su Bin BAE , Shin Il CHOI
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/78606 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/78603 , H01L29/78633 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor array panel includes a substrate; a data line disposed on the substrate; a buffer layer disposed on the substrate and spaced apart from the data line in a plan view; a thin film transistor disposed on the buffer layer, the thin film transistor including an oxide semiconductor layer; and a pixel electrode connected to the thin film transistor.

8. 发明申请

US20150109563A1 LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：液晶显示及其制造方法
公开(公告)号：US20150109563A1
公开(公告)日：2015-04-23
申请号：US14578703
申请日：2014-12-22
申请人： Samsung Display Co., Ltd.
发明人： Hyang-Shik KONG , Sung Hoon YANG , Se Hwan YU , Yong Hwan SHIN , Su Mi LEE , Shin Il CHOI
IPC分类号： G02F1/1343 , G02F1/1335
CPC分类号： G02F1/13439 , G02F1/133528 , G02F2001/133548 , G02F2001/133565
摘要： A manufacturing method of a liquid crystal display includes: forming an etch target layer including a conductive material on a first substrate; forming a first mask layer on the etch target layer; forming a block copolymer coating layer including a plurality of polymers on the first mask layer; processing the block copolymer coating layer to form a block copolymer pattern layer including first and second polymer blocks; removing one of the first or second polymer blocks to form a second mask pattern layer; etching the first mask layer by using the second mask pattern layer as an etching mask to form a first mask pattern layer; and etching the etch target layer by using the first mask pattern layer as an etching mask to form a first electrode. The first electrode includes a plurality of the first minute patterns extending in a predetermined direction and having a polarization function.
摘要翻译：液晶显示器的制造方法包括：在第一基板上形成包括导电材料的蚀刻目标层; 在所述蚀刻目标层上形成第一掩模层; 在所述第一掩模层上形成包含多个聚合物的嵌段共聚物涂层; 处理嵌段共聚物涂层以形成包含第一和第二聚合物嵌段的嵌段共聚物图案层; 去除所述第一或第二聚合物嵌段之一以形成第二掩模图案层; 通过使用第二掩模图案层作为蚀刻掩模蚀刻第一掩模层以形成第一掩模图案层; 以及通过使用第一掩模图案层作为蚀刻掩模蚀刻蚀刻目标层以形成第一电极。第一电极包括沿预定方向延伸并且具有偏振功能的多个第一微小图案。

9. 发明申请

US20220199745A1 DISPLAY DEVICE 有权
公开(公告)号：US20220199745A1
公开(公告)日：2022-06-23
申请号：US17489120
申请日：2021-09-29
申请人： Samsung Display Co., LTD.
发明人： Gyung Min BAEK , Tae Wook KANG , Shin Il CHOI
IPC分类号： H01L27/32
摘要： A display device includes a substrate including a display area and a pad area, a transistor including an active layer disposed in the display area, a gate electrode disposed on the active layer, and a source electrode and a drain electrode disposed on the gate electrode, a fan-out line disposed in the pad area, an auxiliary line disposed on the fan-out line, a first interlayer insulating layer disposed between the gate electrode and the source electrode and between the fan-out line and the auxiliary line, and a first organic layer disposed between the first interlayer insulating layer and the auxiliary line, wherein the first organic layer does not overlap the display area.

10. 发明申请

US20210296417A1 DISPLAY DEVICE 有权
公开(公告)号：US20210296417A1
公开(公告)日：2021-09-23
申请号：US17127566
申请日：2020-12-18
申请人： Samsung Display Co., Ltd.
发明人： Chul Min BAE , Ju Hyun LEE , Ji Hye HAN , Gyung Min BAEK , Shin Il CHOI
IPC分类号： H01L27/32 , H01L27/15
摘要： A display device according to an embodiment includes: a substrate; a first compensation layer on the substrate; a buffer layer on the first compensation layer; a semiconductor layer on the buffer layer; a data wire including a source electrode and a drain electrode connected to the semiconductor layer; and a light-emitting device connected to the drain electrode, wherein the first compensation layer includes a SiNx, and a ratio of a N—H bond and a Si—H bond of the first compensation layer is 10 to 60.

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