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    • 3. 发明授权
    • Substrate support with advanced edge control provisions
    • 基板支持与先进的边缘控制规定
    • US09287147B2
    • 2016-03-15
    • US13827687
    • 2013-03-14
    • Kyle TantiwongSamer Banna
    • Kyle TantiwongSamer Banna
    • H01L21/683H01L21/67H01L21/687
    • H01L21/67109H01L21/6831H01L21/68735H01L21/68785
    • Embodiments of the present invention generally provide an apparatus with a recess and a cavity formed therein for future hardware retrofit and uniformity enhancement and methods for controlling the same. In one embodiment, a substrate support includes a supporting body having an outer wall, a ground path disposed against and bounding the outer wall of the supporting body, a mounting plate coupled to a lower surface of the supporting body, wherein the mounting plate includes a lip extending outward from the mounting plate defining an upper surface; and a recess formed at a perimeter of the supporting body above the upper surface of the lip of the mounting plate, the recess lining on the ground path extending at least partially to the mounting plate.
    • 本发明的实施例通常提供一种装置,其具有形成在其中以用于将来的硬件改进和均匀性增强的凹部和空腔以及用于控制它的方法。 在一个实施例中,衬底支撑件包括支撑体,其具有外壁,抵靠并限制支撑体的外壁的接地路径;联接到支撑体的下表面的安装板,其中安装板包括: 嘴唇,其从安装板向外延伸,限定上表面; 以及在所述安装板的唇缘的上表面上方的所述支撑体的周边处形成的凹部,所述接地路径上的所述凹陷衬垫至少部分地延伸到所述安装板。
    • 6. 发明授权
    • Electrostatic chuck with advanced RF and temperature uniformity
    • 静电卡盘具有先进的射频和温度均匀性
    • US08937800B2
    • 2015-01-20
    • US13867515
    • 2013-04-22
    • Dmitry LubomirskyJennifer Y. SunMark MarkovskyKonstantin MakhratchevDouglas A. Buchberger, Jr.Samer Banna
    • Dmitry LubomirskyJennifer Y. SunMark MarkovskyKonstantin MakhratchevDouglas A. Buchberger, Jr.Samer Banna
    • H02N13/00H01L21/67
    • H02N13/00H01L21/67103
    • Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.
    • 描述了具有RF和温度均匀性的静电卡盘(ESCs)。 例如,ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方,并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方,第三介电层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方,第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。
    • 10. 发明授权
    • Field enhanced inductively coupled plasma (Fe-ICP) reactor
    • 场增强电感耦合等离子体(Fe-ICP)反应器
    • US08299391B2
    • 2012-10-30
    • US12182342
    • 2008-07-30
    • Valentin N. TodorowSamer BannaKartik RamaswamyMichael D. Willwerth
    • Valentin N. TodorowSamer BannaKartik RamaswamyMichael D. Willwerth
    • B23K10/00
    • H05H1/46H01J37/32091H01J37/321
    • Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.
    • 本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。 在一些实施例中,场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。 等离子体源组件包括一个或多个线圈,其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体,一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体,其中, 或多个电极电耦合到所述一个或多个线圈中的一个,以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。 在一些实施例中,加热器元件可以设置在电介质盖和等离子体源组件之间。