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1. 发明授权

US06524912B1 Planarization of metal container structures 失效
标题翻译：金属容器结构的平面化
公开(公告)号：US06524912B1
公开(公告)日：2003-02-25
申请号：US09653280
申请日：2000-08-31
申请人： Sam Yang , John M. Drynan
发明人： Sam Yang , John M. Drynan
IPC分类号： H01L218242
CPC分类号： H01L21/76843 , H01L21/3212 , H01L21/7684 , H01L27/10852 , H01L27/10855 , H01L28/90 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material is formed over at least a portion of the conductive material which is inside the opening and which is also over the insulative material outside of the opening. The metal-containing material at least partially fills the opening. At least a portion of both the metal-containing fill material and the conductive material outside of the opening is then removed. Thereafter, at least a portion of the metal-containing fill material which is inside the opening is then removed.
摘要翻译：导电材料设置在形成于绝缘材料的开口中。该方法包括首先在该开口的至少一部分上方和在该开口外部的至少一部分绝缘材料上形成导电材料。接下来，在开口内部的导电材料的至少一部分上形成含金属填充材料，并且还在开口外部的绝缘材料上方。含金属的材料至少部分地填充开口。然后除去开口内部的含金属填充材料和导电材料的至少一部分。此后，除去开口内部的含金属填充材料的至少一部分。

2. 发明授权

US07053462B2 Planarization of metal container structures 失效
公开(公告)号：US07053462B2
公开(公告)日：2006-05-30
申请号：US10309114
申请日：2002-12-04
申请人： Sam Yang , John M. Drynan
发明人： Sam Yang , John M. Drynan
IPC分类号： H01L29/00 , H01L29/40 , H01L23/48 , H01L23/52
CPC分类号： H01L21/76843 , H01L21/3212 , H01L21/7684 , H01L27/10852 , H01L27/10855 , H01L28/90 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material is formed over at least a portion of the conductive material which is inside the opening and which is also over the insulative material outside of the opening. The metal-containing material at least partially fills the opening. At least a portion of both the metal-containing fill material and the conductive material outside of the opening is then removed. Thereafter, at least a portion of the metal-containing fill material which is inside the opening is then removed.

3. 发明授权

US08471908B2 Three-dimensional mirror display system for a vehicle and method 有权
标题翻译：一种用于车辆和方法的立体镜显示系统
公开(公告)号：US08471908B2
公开(公告)日：2013-06-25
申请号：US12906387
申请日：2010-10-18
申请人： Torsten Kanning , Peter G. Diehl , Sam Yang
发明人： Torsten Kanning , Peter G. Diehl , Sam Yang
IPC分类号： H04N7/18
CPC分类号： B60R1/12 , B60R2001/1253 , B60R2300/107 , H04N13/139 , H04N13/239 , H04N13/31
摘要： A display system for a vehicle includes a first camera and a second camera adapted to be mounted to the vehicle. A mirror assembly is provided having a display screen and a view divider such as a parallax barrier. A controller is operatively connected to the cameras and to the display screen and is operable to cause the recorded images to appear as a single three-dimensional image when the images are viewed through the view divider. A method of providing an image of an object that is rearward of a vehicle is also provided.
摘要翻译：车辆的显示系统包括适于安装到车辆的第一照相机和第二照相机。提供具有显示屏和诸如视差屏障的分视器的镜组件。控制器可操作地连接到相机和显示屏幕，并且当通过视野分割器观看图像时，可操作地使得所记录的图像作为单个三维图像出现。还提供了一种提供车辆后方的物体的图像的方法。

4. 发明申请

US20080057663A1 LOW LEAKAGE MIM CAPACITOR 有权
公开(公告)号：US20080057663A1
公开(公告)日：2008-03-06
申请号：US11932512
申请日：2007-10-31
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： H01L21/20
CPC分类号： H01L27/10805 , G11C11/404 , G11C2211/4016 , H01L21/76895 , H01L27/10852 , H01L28/56 , H01L28/91 , Y10S257/906 , Y10S438/957
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

5. 发明授权

US07253076B1 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers 有权
标题翻译：含有钌和钨的层的形成方法和集成电路结构
公开(公告)号：US07253076B1
公开(公告)日：2007-08-07
申请号：US09590795
申请日：2000-06-08
申请人： Vishnu K. Agarwal , Garo Derderian , Gurtej S. Sandhu , Weimin M. Li , Mark Visokay , Cem Basceri , Sam Yang
发明人： Vishnu K. Agarwal , Garo Derderian , Gurtej S. Sandhu , Weimin M. Li , Mark Visokay , Cem Basceri , Sam Yang
IPC分类号： H01L21/20
CPC分类号： H01L28/84 , H01L21/31637 , H01L28/55 , H01L28/65
摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.
摘要翻译：具有增加的电容的电容器包括增强的表面积（粗糙表面）导电层或与高介电常数材料相容的其它层。在一种方法中，用于这种电容器的增强表面积导电层是通过在高温或高于500℃，低压75托或更低，最理想的5托或更低的高温下处理氧化钌层形成的，产生具有至少约100埃的平均特征尺寸的纹理表面的粗糙钌层。初始氧化钌层可以通过化学气相沉积技术或溅射技术等来提供。该层可以形成在下面的导电层上。处理可以在惰性环境或还原环境中进行。可以在处理期间或之后使用供氮环境或供氮还原环境以钝化钌以改善与高介电常数电介质材料的相容性。氧化环境中的处理也可以进行以钝化粗糙层。可以使用粗糙化的钌层来形成增强表面积的导电层。所形成的增强表面积导电层可以在诸如DRAM等的存储单元中的集成电路中形成存储电容器的板。在另一种方法中，提供氮化钨层作为这种电容器的第一电极。电容器或至少氮化钨层被退火以增加电容器的电容。

6. 发明授权

US07192828B2 Capacitor with high dielectric constant materials and method of making 有权
标题翻译：具有高介电常数材料和制作方法的电容器
公开(公告)号：US07192828B2
公开(公告)日：2007-03-20
申请号：US10819420
申请日：2004-04-07
申请人： Cem Basceri , Gurtej S. Sandhu , Sam Yang
发明人： Cem Basceri , Gurtej S. Sandhu , Sam Yang
IPC分类号： H01L21/8242
CPC分类号： H01L28/75 , H01L21/02178 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31604 , H01L21/31683 , H01L27/10811 , H01L28/55
摘要： A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.
摘要翻译：提供了使用非氧化物电极和高介电常数氧化物电介质材料的稳定电容器以及制造这种电容器并将其并入DRAM单元的方法。优选的方法包括提供非氧化物电极，氧化非氧化物电极的上表面，在非氧化物电极的氧化表面上沉积高介电常数氧化物电介质材料，以及在高电极上沉积上层电极介电常数氧化物介电材料。

7. 发明授权

US06664583B2 Metal oxynitride capacitor barrier layer 有权
公开(公告)号：US06664583B2
公开(公告)日：2003-12-16
申请号：US09997920
申请日：2001-11-30
申请人： Sam Yang , Vishnu K. Agarwal
发明人： Sam Yang , Vishnu K. Agarwal
IPC分类号： H01L27108
CPC分类号： H01L28/56 , H01L27/10852 , H01L28/75
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

8. 发明授权

US06586796B2 Capacitor with high dielectric constant materials 有权
标题翻译：具有高介电常数材料的电容器
公开(公告)号：US06586796B2
公开(公告)日：2003-07-01
申请号：US10115340
申请日：2002-04-02
申请人： Cem Basceri , Gurtej S. Sandhu , Sam Yang
发明人： Cem Basceri , Gurtej S. Sandhu , Sam Yang
IPC分类号： H01L31119
CPC分类号： H01L28/75 , H01L21/02178 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31604 , H01L21/31683 , H01L27/10811 , H01L28/55
摘要： A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials is provided. The stabilized capacitor comprises a non-oxide electrode with an oxidized upper surface. A high dielectric constant oxide dielectric material is adjacent to the oxidized upper surface of the non-oxide electrode. An upper layer electrode is adjacent to the high dielectric constant oxide dielectric material.
摘要翻译：提供了使用非氧化物电极和高介电常数氧化物介电材料的稳定电容器。稳定电容器包括具有氧化的上表面的非氧化物电极。高介电常数氧化物介电材料与非氧化物电极的氧化的上表面相邻。上层电极与高介电常数氧化物电介质材料相邻。

9. 发明申请

US20080064179A1 LOW LEAKAGE MIM CAPACITOR 有权
公开(公告)号：US20080064179A1
公开(公告)日：2008-03-13
申请号：US11932677
申请日：2007-10-31
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： H01L21/20
CPC分类号： H01L27/10805 , G11C11/404 , G11C2211/4016 , H01L21/76895 , H01L27/10852 , H01L28/56 , H01L28/91 , Y10S257/906 , Y10S438/957
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

10. 发明申请

US20080057664A1 LOW LEAKAGE MIM CAPACITOR 审中-公开
标题翻译：低漏电容电容器
公开(公告)号：US20080057664A1
公开(公告)日：2008-03-06
申请号：US11932551
申请日：2007-10-31
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： H01L21/20
CPC分类号： H01L27/10805 , G11C11/404 , G11C2211/4016 , H01L21/76895 , H01L27/10852 , H01L28/56 , H01L28/91 , Y10S257/906 , Y10S438/957
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
摘要翻译：用于集成电路的电容器结构及其制造方法。电容器结构包括底电极，顶电极和置于底电极和顶电极之间的电介质层。电容器结构还包括置于电介质层和底电极和顶电极中的至少一个之间的金属氧化物缓冲层。每个金属氧化物缓冲层起着改善电容和减少电容器泄漏的作用。这些电容器适用于作为存储单元和并入这种存储单元的装置以及其他集成电路。

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