会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • Garment for measuring physiological signal
    • 用于测量生理信号的服装
    • US20070038057A1
    • 2007-02-15
    • US11481611
    • 2006-07-06
    • Seung NamSeung KimKyung HongHye Park
    • Seung NamSeung KimKyung HongHye Park
    • A61B5/04
    • A61B5/04085A61B5/6805
    • Provided is a smart garment for measuring a physiological signal which can improve comfort and convenience of wear and correctly measure a physiological signal. The smart garment for measuring physiological signals includes an electrode which is made of an electro-conductive fabric and detects a physiological signal, a physiological signal transmission line through which the detected physiological signal is transmitted, a physiological signal measuring unit which is connected to the transmission line, receives the physiological signal, and measures information regarding body conditions related to the physiological signal, and a pocket where the physiological signal measuring unit in inserted.
    • 提供了一种用于测量生理信号的智能服装,其可以改善磨损的舒适性和便利性并且正确地测量生理信号。 用于测量生理信号的智能服装包括由导电织物制成并检测生理信号的电极,检测到的生理信号通过其传输的生理信号传输线,连接到传输的生理信号测量单元 线,接收生理信号,并测量与生理信号有关的身体状况的信息,以及插入生理信号测量单元的口袋。
    • 4. 发明申请
    • Method for manufacturing circuit board with built-in electronic components
    • 制造具有内置电子部件的电路板的方法
    • US20070006456A1
    • 2007-01-11
    • US11453790
    • 2006-06-15
    • Seung KimChang RyuHan ChoDoo LeeHwa Park
    • Seung KimChang RyuHan ChoDoo LeeHwa Park
    • H01K3/10H05K1/00
    • H05K1/188H05K1/185H05K2201/0355H05K2201/10674Y10T29/49128Y10T29/4913Y10T29/49144Y10T29/49165
    • Disclosed is a method for manufacturing a circuit board, comprising step for preparing an insulating member and an electronic component having position-setting means on the lower surface thereof (S110), step for forming mounting holes in the insulating member (S120), step for mounting the electronic component on the insulating member to meet the position-setting means and the mounting holes (S130), step for forming copper cladding coated with an adhesive on the insulating member (S140), step for applying heat and/or pressure to the copper cladding (S150), and step for forming a via-hole in the copper cladding to be electrically connected to the electronic component, and step for forming a circuit pattern in the copper cladding (S160). The step (S150) can comprise a step (S240) for applying inter-adhesive on respective surfaces of the insulating member, and a step (S250) for applying copper cladding on respective surfaces of the inter-adhesive.
    • 公开了一种制造电路板的方法,包括在其下表面上制备绝缘构件和具有位置设定装置的电子部件的步骤(S110),用于在绝缘构件中形成安装孔的步骤(S120), 步骤,用于将所述电子部件安装在所述绝缘部件上以满足所述位置设定装置和所述安装孔(S130),用于在所述绝缘部件上形成涂覆有粘合剂的铜包层的步骤(S140),用于施加热和/ 或对铜包层的压力(S150),以及用于在铜包层中形成电气连接到电子部件的通孔的步骤,以及用于在铜包层中形成电路图案的步骤(S160)。 步骤(S150)可以包括用于在绝缘构件的相应表面上施加粘合剂的步骤(S 240),以及用于在粘合剂的各个表面上施加铜包层的台阶(S 250)。
    • 6. 发明申请
    • Method for forming metal interconnection of semiconductor device
    • 形成半导体器件金属互连的方法
    • US20060141663A1
    • 2006-06-29
    • US11314347
    • 2005-12-22
    • Seung Kim
    • Seung Kim
    • H01L21/00
    • H01L21/76849H01L21/76814H01L21/76829H01L21/76867
    • A method for forming a metal interconnection of a semiconductor device avoids over-etching and under-etching through the use of the “self-stop” function of a nitridation layer, to prevent the occurrence of openings and voids in a copper interconnection and to obtain a constant trench depth. The method includes forming nitride films on a semiconductor substrate by primary annealing, the semiconductor substrate being provided with a first IMD film and a tungsten plug; depositing a second IMD film on the semiconductor substrate on which the nitride films are formed; depositing a photoresist on the second IMD film and patterning the photoresist; etching the second IMD film using the patterned photoresist to form a trench; removing the nitride films using a chemical; depositing a copper barrier metal film and a copper seed layer in the trench from which the nitride films are removed, and depositing copper; secondarily annealing the substrate on which the copper is deposited; and planarizing the secondarily annealed substrate by chemical-mechanical polishing
    • 用于形成半导体器件的金属互连的方法通过使用氮化层的“自停”功能避免过蚀刻和欠蚀刻,以防止铜互连中的开口和空隙的发生,并获得 恒定的沟槽深度。 该方法包括通过一次退火在半导体衬底上形成氮化物膜,半导体衬底设置有第一IMD膜和钨插塞; 在其上形成氮化物膜的半导体衬底上沉积第二IMD膜; 在第二IMD膜上沉积光刻胶并图案化光致抗蚀剂; 使用图案化的光致抗蚀剂蚀刻第二IMD膜以形成沟槽; 使用化学品去除氮化物膜; 在除去氮化物膜的沟槽中沉积铜阻挡金属膜和铜籽晶层,并沉积铜; 二次退火沉积有铜的基板; 并通过化学机械抛光对二次退火的基板进行平面化
    • 9. 发明申请
    • COOLING STRUCTURE FOR OVEN DOOR OF MICROWAVE OVEN USABLE AS PIZZA OVEN
    • 用作烤炉烤箱的烤箱的冷却结构
    • US20050133503A1
    • 2005-06-23
    • US11013661
    • 2004-12-16
    • Seung KimKyung Yang
    • Seung KimKyung Yang
    • F24C15/18H05B6/80H05B6/64
    • H05B6/642H05B6/6414
    • A cooling structure for an oven door of a microwave oven usable as a pizza oven, which includes air inlet perforations formed through a portion of a chamber partition wall contacting one side section of the oven door to communicate with an electric device installation chamber, and thus, to receive ambient air, air inlet perforations formed through the side section of the oven door, the inlet perforations having the same shape as the first air inlet perforations such that the second air inlet perforations are aligned with the first air inlet perforations to introduce the air into the interior of the oven door, and air outlet perforations formed through the other side and top sections of the oven door to outwardly exhaust the air introduced into the interior of the oven door.
    • 一种用作比萨炉的微波炉的烤箱门的冷却结构,其包括通过与隔室门分隔壁的一部分形成的空气入口穿孔,所述室隔壁与炉门的一侧部分连接,以与电气设备安装室连通,因此 为了接收环境空气,通过烤箱门的侧部分形成的空气入口穿孔,入口穿孔具有与第一进气孔穿孔相同的形状,使得第二进气孔与第一进气穿孔对准, 空气进入烤箱门的内部,以及通过烤箱门的另一侧和顶部部分形成的出气孔,以向外排出引入烤箱门内部的空气。